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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2024

Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN. We consider GaMg, MgSO 4 $\bullet$7H 2 O, MgZn, AlMg, and AuMgSi alloys. Although issues of oxidation (GaMg), decomposition (MgSO 4 $\bullet$7H 2 O), and excessive vapor pressure (MgZn and AlMg) were encountered, the AuMgSi alloy LMAIS operating in a Wien-filtered FIB column emits all Mg isotopes in singly and doubly charged ionization states. We discuss the operating conditions to achieve <20 nm spot size Mg FIB implantation and present Mg depth profile data from time-of-flight secondary ion mass spectrometry. We also provide insight into implantation damage and recovery based on cathodoluminescence spectroscopy before and after rapid thermal processing. Prospects for incorporating the Mg LMAIS into high-power electronic device fabrication are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of chromium impurities in β -Ga2O3

Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al2O3, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga2O3 through theoretical and experimental techniques. β-Ga2O3 samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck–Condon approximation. The combination of strong emission with a small Huang–Rhys factor of 0.05 and a technologically relevant host material renders Cr in Ga2O3 attractive as a quantum defect.

Turiansky, Mark E. (ORCID:0000000291543582)↗
DOE OSTI2019

Boron–oxygen complex yields n-type surface layer in semiconducting diamond

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (~0.778 × 10 21 cm -3 ) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ~1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B 3 O and B 4 O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Microfabrication of air core power inductors with metal-encapsulated polymer vias

This paper reports three-dimensional (3-D) microfabricated toroidal inductors intended for power electronics applications. A key fabrication advance is the exploitation of thick metal encapsulation of polymer pillars to form a vertical via interconnections. The radial conductors of the toroidal inductor are formed by conventional plating-through-mold techniques, while the vertical windings (up to 650 mu m in height) are formed by polymer cores with metal plated on their external surfaces. This encapsulated polymer approach not only significantly reduces the required plating time but also exploits the relative ease of fabricating high-aspect-ratio SU-8 pillars. To form the top radial conductors, non-photopatternable SU-8 is introduced as a thick sacrificial layer. Two toroidal inductor geometries were fabricated and tested. The first inductor had an inner diameter of 2 mm, an outer diameter of 6 mm, 25 turns and a vertical via height of 650 mu m. The second inductor had an inner diameter of 4 mm, an outer diameter of 8 mm, 50 turns and a vertical via height of 650 mu m. Both inductor geometries were successfully fabricated and characterized in the frequency range of 0.1-100 MHz. Characterization results of the 25- and 50-turn inductors showed an average inductance of 76 and 200 nH, a low frequency (0.1 MHz) resistance of 0.2 and 1 Omega and a quality factor of 35 and 24 at 100 MHz, respectively. Finite-element simulations of the inductors were performed and agreed with the measured results to within 8%. The turn-to-turn breakdown voltage was measured to be in excess of 800 V and currents as high as 0.5 A could be successfully carried by the inductor windings.

Kim, J↗
DOE OSTI2020

High-energy ballistic electrons in low-pressure radio-frequency plasmas

This study demonstrates the presence of a small number of high-energy ballistic electrons (HEBEs) that originate from secondary electrons in low-pressure radio-frequency (rf) plasmas. The kinetic behaviors of the HEBEs are illustrated through electron energy probability functions from the fully kinetic particle-in-cell simulations, showing two wavy high-energy tails and two bifurcations during one rf cycle. Test-particle simulations and a semi-analytical method associated with nonlocal electron kinetics are performed to characterize the HEBE trajectories, which reveal the ballistic nature of the HEBEs and their typical bouncing features between the rf sheaths. Parameter dependence of the HEBEs on the discharge conditions (e.g., gas pressure, gap distance, and rf frequency) are identified, which is relevant to the plasma collisionality. With a pronounced presence of HEBEs, the overall impacts of the secondary electron emission on discharge parameters, such as electron power absorption and ionization rate, are also illustrated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

First demonstration of a cryocooler conduction cooled superconducting radiofrequency cavity operating at practical cw accelerating gradients

Abstract We demonstrate practical accelerating gradients on a superconducting radiofrequency (SRF) accelerator cavity with cryocooler conduction cooling, a cooling technique that does not involve the complexities of the conventional liquid helium bath. A design is first presented that enables conduction cooling an elliptical-cell SRF cavity. Implementing this design, a single cell 650 MHz Nb 3 Sn cavity coupled using high purity aluminum thermal links to a 4 K pulse tube cryocooler generated accelerating gradients up to 6.6 MV m −1 at 100% duty cycle. The experiments were carried out with the cavity-cryocooler assembly in a simple vacuum vessel, completely free of circulating liquid cryogens. We anticipate that this cryocooling technique will make the SRF technology accessible to interested accelerator researchers who lack access to full-stack helium cryogenic systems. Furthermore, the technique can lead to SRF based compact sources of high average power electron beams for environmental protection and industrial applications. A concept of such an SRF compact accelerator is presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

The high-power helicon program at DIII-D: gearing up for first experiments

Helicon current drive, also called fast wave current drive in the lower hybrid range of frequencies, has long been regarded as a promising current drive tool for reactor grade plasmas. A newly installed MW-level system at DIII-D will be the first test of this technology in reactor-relevant plasmas, in the sense that full single-pass absorption is expected. A 30-module traveling wave antenna has been installed and optimized in-vessel in early 2020. The linear electromagnetic characteristics of the unloaded module array have been extensively tested both on the bench and in the vessel at instrumentation power levels. Excellent performance has been achieved, ~2% reflected power and ~1.5% dissipated power per module in air, in a 10 MHz band around 476 MHz. Stripline feeds on both ends of the antenna allow either co or counter current drive. The installation of a 1.2 MW klystron and associated high-power electronics was completed in Fall 2020. Commissioning of the antenna is ongoing. An important goal of this experiment is to validate the helicon current drive physics basis using an extensive set of new and upgraded diagnostics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Studies in pulse shape discrimination for an optimized ASIC design

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.

Si-PMTs↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗
DOE OSTI2024

Heterostructural interface engineering for ultrawide-gap nitrides from first principles: Ta C / Al N and Ta C / Ga N rocksalt-wurtzite interfaces

Epitaxial lattice matching is an important condition for the formation of coherent interfaces with low defect densities. However, lattice-matched substrates with the same crystal structure as the active layer are often not available, suggesting opportunities for utilizing heterostructural interfaces. For example, at high Al contents that are interesting for ultrawide-gap applications in power electronics, Al x ⁢Ga 1-x ⁢N semiconductor alloys in the (0001) orientation of the wurtzite (wz) structure become lattice-matched to (111)-oriented rocksalt (rs) Ta⁢C substrates. To predict the expected interface atomic structures under different synthesis conditions, we perform high-throughput density-functional-theory calculations, using an algorithm for systematic sampling of the possible stacking sequences of the atomic layers on the in-plane hexagonal lattice. The approach considers octahedral, tetrahedral, and prismatic coordination motifs, and is generally applicable for the modeling of commensurate rs/wz heterostructural interfaces. Our results provide guidance for synthesis control of substrate-film bonding and the polarity of ultrawide-gap Al x⁢ Ga 1-x⁢ N alloys on Ta⁢C substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Optimizing n -type doping of ZnGeN 2 and ZnSiN 2

In order for the wide-band-gap Zn-IV-nitrides to find applications in power electronics or optoelectronics, controlled n-type doping is required. In this work, we systematically explore group-V and group-VI dopants that can act as donors in ZnGeN 2 and ZnSiN 2 . We address compensation by native acceptors as well as self-compensation by formation of DX centers. For ZnGeN 2 , we find that S N , Se N , P Ge , and As Ge act as shallow donors. P Ge has the lowest formation energy and can be used to reach carrier concentrations up to n = 1.3 × 1019 cm –3 . PSi acts as a shallow donor in ZnSiN 2 ; however, because of strong compensation from native acceptors, we find that ZnSiN 2 cannot be doped n type.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Suppression of Alfven Modes on the National Spherical Torus Experiment Upgrade with Outboard Beam Injection [Suppression of Alfven Modes on the NSTX-U with Outboard Beam Injection]

In this paper we present data from experiments on the National Spherical Torus Experiment Upgrade, where it is shown for the first time that small amounts of high pitch-angle beam ions can strongly suppress the counterpropagating global Alfven eigenmodes (GAE). GAE have been implicated in the redistribution of fast ions and modification of the electron power balance in previous experiments on NSTX. The ability to predict the stability of Alfven modes, and developing methods to control them, is important for fusion reactors like the International Tokamak Experimental Reactor, which are heated by a large population of nonthermal, super-Alfvenic ions consisting of fusion generated alpha's and beam ions injected for current profile control. We present a qualitative interpretation of these observations using an analytic model of the Doppler-shifted ion-cyclotron resonance drive responsible for GAE instability which has an important dependence on k(perpendicular to rho L). A quantitative analysis of this data with the HYM stability code predicts both the frequencies and instability of the GAE prior to, and suppression of the GAE after the injection of high pitch-angle beam ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

β–Ga 2 O 3 is an ultrawide band gap semiconductor with emerging applications in power electronics. Here, the introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β–Ga 2 O 3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu 2+ to Cu 3+ , a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O–H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When Cu Ga –HO complexes absorb light, hydrogen is released, contributing to the observed Cu 3+ species and O–H modes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thermal conductivity of GaN, 71 GaN, and SiC from 150 K to 850 K

The thermal conductivity (Λ) of wide-band-gap semiconductors GaN and SiC is critical for their application in power devices and optoelectronics. Here, we report time-domain thermoreflectance measurements of Λ in GaN, 71 GaN, and SiC between 150 and 850 K. The samples include bulk c- and m-plane wurtzite GaN grown by hydride vapor phase epitaxy (HVPE) and ammonothermal methods; homoepitaxial natural isotope abundant GaN and isotopically enriched 71 GaN layers with thickness of 6–12 μm grown on c-, m-, and a-plane GaN substrates grown by HVPE; and bulk crystals of 4H and 6H SiC. In low dislocation density (<10 7 cm –2 ) bulk and homoepitaxial GaN, Λ is insensitive to crystal orientation and doping concentration (for doping <10 19 cm –3 ); Λ ≈ 200 W m –1 K –1 at 300 K and ≈ 50 W m –1 K –1 at 850 K. In 71 GaN epilayers at 300 K, Λ is ≈15% higher than in GaN with natural isotope abundance. The measured temperature dependence of Λ in GaN is stronger than predicted by first-principles based solutions of the Boltzmann transport equation that include anharmonicity up to third order. This discrepancy between theory and experiment suggests possible significant contributions to the thermal resistivity from higher-order phonon scattering that involve interactions between more than three phonons. The measured Λ of 4H and 6H SiC is anisotropic, in good agreement with first-principles calculations, and larger than GaN by a factor of ≈1.5 in the temperature range 300 < T < 850K. Furthermore, this paper provides benchmark knowledge about the thermal conductivity in wide-band-gap semiconductors of GaN, 71 GaN, and SiC over a wide temperature range for their applications in power electronics and optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap > 4.0 eV), such as BN and diamond, hold significant importance for the development of high-power electronics in the next generation. However, achieving in situ heteroepitaxy of BN/diamond or vice versa remains exceptionally challenging due to the complex growth kinetics involved. In this work, we grew BN thin film on (100) single-crystal diamonds using pulsed laser deposition and investigated its structural, magnetic, optical, and thermal properties. Throughout this study, the structural analyses confirmed the growth of BN films, which exhibited diamagnetic behavior at room temperature. Notably, the film demonstrated anisotropic refractive index characteristics within the visible-to-near-infrared wavelength range. The room-temperature cross-plane thermal conductivity of BN is 1.53 ± 0.77 W/mK, while the thermal conductance of the BN/diamond interface is 20 ± 2 MW/m 2 ⁢K. These findings have significant implications for a range of device applications based on UWBG BN/diamond heterostructures.

36 MATERIALS SCIENCE↗