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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81

CoFe{sub 2}/Al{sub 2}O{sub 3}/PMNPT multiferroic heterostructures by atomic layer deposition

Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ∼110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al{sub 2}O{sub 3}/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Restoring universality to the pinch-off of a bubble

The pinch-off of a bubble is an example of the formation of a singularity, exhibiting a characteristic separation of length and time scales. Because of this scale separation, one expects universal dynamics that collapse into self-similar behavior determined by the relative importance of viscous, inertial, and capillary forces. Surprisingly, however, the pinch-off of a bubble in a large tank of viscous liquid is known to be nonuniversal. In this work, we show that the pinch-off dynamics of a bubble confined in a capillary tube undergo a sequence of two distinct self-similar regimes, even though the entire evolution is controlled by a balance between viscous and capillary forces. We demonstrate that the early-time self-similar regime restores universality to bubble pinch-off by erasing the system’s memory of the initial conditions. Our findings have important implications for bubble/drop generation in microfluidic devices, with applications in inkjet printing, medical imaging, and synthesis of particulate materials.

moving contact lines↗

Optical bistability in PECVD silicon-rich nitride

We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10 −4 /°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching.

42 ENGINEERING↗

Electronic Structure of Buried Interfaces - Oral Presentation [Slides]

In the electronics behind computer memory storage, the speed and size are dictated by the performance of permanent magnets inside devices called read heads. Complicated magnets made of stacked layers of thin films can be engineered to have properties that yield more energy storage and faster switching times compared to conventional iron or cobalt magnets. The reason is that magnetism is a result of subtle interactions amongst electrons; just how neurons come together on large scales to make cat brains and dog brains, ensembles of electrons interact and become ferromagnets and paramagnets. These interactions make magnets too difficult to study in their entirety, so I focus on the interfaces between layers, which are responsible for the coupling materials physicists hope to exploit to produce next-generation magnets. This project, I study a transition metal oxide material called LSCO, Lanthanum Cobaltite, which can be a paramagnet or a ferromagnet depending on how you tweak the electronic structure. It exhibits an exciting behavior: its sum is greater than the sum of its parts. When another similar material called a LSMO, Lanthanum Manganite, is grown on top of it, their interface has a different type of magnetism from the LSCO or the LSMO! I hope to explain this by demonstrating differently charged ions in the interface. The typical method for quantifying this is x-ray absorption, but all conventional techniques look at every layer simultaneously, averaging the interfaces and the LSCO layers that we want to characterize separately. Instead, I must use a new reflectivity technique, which tracks the intensity of reflected x-rays at different angles, at energies near the absorption peaks of certain elements, to track changes in the electronic structure of the material. The samples were grown by collaborators at the Takamura group at U.C. Davis and probed with this “resonant reflectivity” technique on Beamline 2-1 at the Stanford Synchrotron Radiation Lightsource. This project was funded by the Department of Energy and supported by the SLAC National Accelerator Laboratory. Preliminary results suggest that different ionic charges are indeed responsible for the different magnetic properties at the interface, which is promising because charge is easy to control. Once scientists understand how to tune the magnetic properties of materials like LSCO and LSMO, industries get closer to designing the magnets that will soon revolutionize consumer electronics.

36 MATERIALS SCIENCE↗

Investigation of superconducting interactions and amorphous semiconductors

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Janocko, M. A.↗

Video System for Viewing From a Remote or Windowless Cockpit

A system of electronic hardware and software synthesizes, in nearly real time, an image of a portion of a scene surveyed by as many as eight video cameras aimed, in different directions, at portions of the scene. This is a prototype of systems that would enable a pilot to view the scene outside a remote or windowless cockpit. The outputs of the cameras are digitized. Direct memory addressing is used to store the data of a few captured images in sequence, and the sequence is repeated in cycles. Cylindrical warping is used in merging adjacent images at their borders to construct a mosaic image of the scene. The mosaic-image data are written to a memory block from which they can be rendered on a head-mounted display (HMD) device. A subsystem in the HMD device tracks the direction of gaze of the wearer, providing data that are used to select, for display, the portion of the mosaic image corresponding to the direction of gaze. The basic functionality of the system has been demonstrated by mounting the cameras on the roof of a van and steering the van by use of the images presented on the HMD device.

Banerjee, Amamath↗

Range and Intensity Image-Based Terrain and Vehicle Relative Pose Estimation System

A navigation system includes an image acquisition device for acquiring a range image of a target vehicle, at least one processor, a memory including a target vehicle model and computer readable program code, where the processor and the computer readable program code are configured to cause the navigation system to convert the range image to a point cloud having three dimensions, compute a transform from the target vehicle model to the point cloud, and use the transform to estimate the target vehicle's attitude and position for capturing the target vehicle.

Gill, Nathaniel↗

Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (ε{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ε{sub r} values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH){sub 2}. The results provide further insights into charge transport and help identify potential switching mechanisms in SiO{sub x}-based unipolar resistive switching memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Blackcomb 2: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems

Fast non-volatile memory (NVM) offers game-changing opportunities to rethink traditional system architectures; to address their energy inefficiencies; to leverage the new devices for greater performance; and to exploit the new capability of non-volatility to enhance system resilience, even in the face of larger system scale and degraded reliability of components. However, the devil is in the details, and to reap such potential benefits we must address challenges that arise when the contents of memory survive application failure, when software becomes responsible for managing the contents of CPU caches, and when memory accelerators blur the line between hardware and software. Building on the accomplishments of the Blackcomb Project, funded in 2010, we have identified, evaluated, and optimized promising NVM hardware and software technologies that are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in exascale systems.

97 MATHEMATICS AND COMPUTING↗

Thermal-gradient-driven elemental segregation in Ge 2 Sb 2 Te 5 phase change memory cells

Thermal gradients have been predicted to play a large role in compositional segregation leading to failure in phase change memories. We have developed a methodology for isolating thermal-gradient driven segregation effects without interference from the electric field. In Ge 2 Sb 2 Te 5 functional layers, Sb and Te move along the temperature gradient, while Ge segregates in the opposite direction. The direction of segregation is consistent for devices that were repeatedly melted, as well as for devices that were never melted and remained in the polycrystalline state. Here, the results have implications for the reliability of phase change memories.

36 MATERIALS SCIENCE↗

Electrically reversible cracks in an intermetallic film controlled by an electric field

Cracks in solid-state materials are typically irreversible. We report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 10 8 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 10 7 cycles under 10-μs pulses, without catastrophic failure of the film.

36 MATERIALS SCIENCE↗

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

On Nibbles and Bytes: The Conundrum of Memory for Space Systems - NASA Electronic Parts and Packaging (NEPP) and Efforts in Memories

Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart requirements. a) Many commercial devices (NVM and SDRAMs) meet or come close to this. b) Charge pump TID tolerance has improved an order magnitude over the last 10 years. 2) There are always a few programs with higher level needs and, of course, defense needs SEL: 1) Prefer none or rates that are considered low risk. a) Latent damage is a bear to deal with. 2) As we re packing cells tighter and even with lower Vdd, we re seeing SEL on commercial devices regularly (<90nm). a) Often in power conversion, I/O, or control areas. SEU: 1) It s not the bit errors, it s the SEFIs errors that are the biggest issues. a) Scrubbing concerns for risk, power, speed.

LaBel, Kenneth A.↗

A membrane page composer - Further developments

Membrane page composers were made and were evaluated in a simulated holographic optical memory system. Calculated and experimentally determined electromechanical and optical characteristics of the circular membrane light valves used on the arrays are shown to be in close agreement. Several operating prototypes of 8 x 8 and 16 x 16 elements were produced. Measurements were made of switching time, optical contrast, and dynamic storage time of many cells on the devices. Digital patterns were stored in the arrays. The performance required of the page composer as a component of an optical memory system is considered. The fabrication techniques used can be easily extended to larger arrays.

Cosentino, L. S.↗

Pattern-Recognition Processor Using Holographic Photopolymer

proposed joint-transform optical correlator (JTOC) would be capable of operating as a real-time pattern-recognition processor. The key correlation-filter reading/writing medium of this JTOC would be an updateable holographic photopolymer. The high-resolution, high-speed characteristics of this photopolymer would enable pattern-recognition processing to occur at a speed three orders of magnitude greater than that of state-of-the-art digital pattern-recognition processors. There are many potential applications in biometric personal identification (e.g., using images of fingerprints and faces) and nondestructive industrial inspection. In order to appreciate the advantages of the proposed JTOC, it is necessary to understand the principle of operation of a conventional JTOC. In a conventional JTOC (shown in the upper part of the figure), a collimated laser beam passes through two side-by-side spatial light modulators (SLMs). One SLM displays a real-time input image to be recognized. The other SLM displays a reference image from a digital memory. A Fourier-transform lens is placed at its focal distance from the SLM plane, and a charge-coupled device (CCD) image detector is placed at the back focal plane of the lens for use as a square-law recorder. Processing takes place in two stages. In the first stage, the CCD records the interference pattern between the Fourier transforms of the input and reference images, and the pattern is then digitized and saved in a buffer memory. In the second stage, the reference SLM is turned off and the interference pattern is fed back to the input SLM. The interference pattern thus becomes Fourier-transformed, yielding at the CCD an image representing the joint-transform correlation between the input and reference images. This image contains a sharp correlation peak when the input and reference images are matched. The drawbacks of a conventional JTOC are the following: The CCD has low spatial resolution and is not an ideal square-law detector for the purpose of holographic recording of interference fringes. A typical state-of-the-art CCD has a pixel-pitch limited resolution of about 100 lines/mm. In contrast, the holographic photopolymer to be used in the proposed JTOC offers a resolution > 2,000 lines/mm. In addition to being disadvantageous in itself, the low resolution of the CCD causes overlap of a DC term and the desired correlation term in the output image. This overlap severely limits the correlation signal-to-noise ratio. The two-stage nature of the process limits the achievable throughput rate. A further limit is imposed by the low frame rate (typical video rates) of low- and medium-cost commercial CCDs.

Chao, Tien-Hsin↗

Flight Control Using Distributed Shape-Change Effector Arrays

Recent discoveries in material science and fluidics have been used to create a variety of novel effector devices that offer great potential to enable new approaches to aerospace vehicle flight control. Examples include small inflatable blisters, shape-memory alloy diaphragms, and piezoelectric patches that may be used to produce distortions or bumps on the surface of an airfoil to generate control moments. Small jets have also been used to produce a virtual shape-change through fluidic means by creating a recirculation bubble on the surface of an airfoil. An advanced aerospace vehicle might use distributed arrays of hundreds of such devices to generate moments for stabilization and maneuver control, either augmenting or replacing conventional ailerons, flaps or rudders. This research demonstrates the design and use of shape-change device arrays for a tailless aircraft in a low-rate maneuvering application. A methodology for assessing the control authority of the device arrays is described, and a suite of arrays is used in a dynamic simulation to illustrate allocation and deployment methodologies. Although the authority of the preliminary shape-change array designs studied in this paper appeared quite low, the simulation results indicate that the effector suite possessed sufficient authority to stabilize and maneuver the vehicle in mild turbulence.

Raney, David L.↗

Single-Event Upset in Flash Memories

This paper discusses single-event upset effets in flash memories, using heavy ions at the Texas A&M cyclotron. Initial results are presented for one manufacturer that compare uspet in the individual memory elemts with the more complex funtion failure modes that occur in the internal state machine and its control registers. This device is designed to function with either 5-V or 3.3-V power supply levels for read operations, but requires an additional 5 or 12-V power supply for write and erase operations.

Flash↗

Evaluating Burst Buffer Placement in HPC Systems

Burst buffers (BBs) are increasingly exploited in contemporary supercomputers to bridge the performance gap between compute and storage systems. The design of BBs, particularly the placement of these devices and the underlying network topology, impacts both performance and cost. As the cost of other components such as memory and accelerators is increasing, it is becoming more important that HPC centers provision BBs tailored to their workloads.This work contributes a provisioning system to provide accurate, multi-tenant simulations that model realistic application and storage workloads from HPC systems. The framework aids HPC centers in modeling their workloads against multiple network and BB configurations rapidly. In experiments with our framework, we provide a comparison of representative Oak Ridge Leadership Computing Facility (OLCF) I/O workloads against multiple BB designs. We analyze the impact of these designs on latency, I/O phase lengths, contention for network and storage devices, and choice of network topology.

Khetawat, Harsh↗