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At least 1,459 records · Page 81
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DOE OSTI2022

Quantum state preparation and nonunitary evolution with diagonal operators

Realizing nonunitary transformations on unitary-gate-based quantum devices is critically important for simulating a variety of physical problems, including open quantum systems and subnormalized quantum states. Here, we present a dilation-based algorithm to simulate nonunitary operations using probabilistic quantum computing with only one ancilla qubit. We utilize the singular-value decomposition (SVD) to decompose any general quantum operator into a product of two unitary operators and a diagonal nonunitary operator, which we show can be implemented by a diagonal unitary operator in a one-qubit dilated space. While dilation techniques increase the number of qubits in the calculation, and thus the gate complexity, our algorithm limits the operations required in the dilated space to a diagonal unitary operator, which has known circuit decompositions. We use this algorithm to prepare random subnormalized two-level states on a quantum device with high fidelity. Furthermore, we present the accurate nonunitary dynamics of two-level open quantum systems in a dephasing channel and an amplitude-damping channel computed on a quantum device. The algorithm presented will be most useful for implementing general nonunitary operations when the SVD can be readily computed, which is the case for most operators in the noisy intermediate-scale quantum computing era.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Possibilistic simulation of quantum circuits by classical circuits

In a breakthrough work, Bravyi, Gosset, and König (BGK) [Science 362, 308 (2018)] unconditionally proved that constant-depth quantum circuits are more powerful than their classical counterparts. Here, their result is equivalent to saying that a particular family of constant-depth quantum circuits takes classical circuits at least Ω⁡(log⁡n) depth to “simulate,” in a certain sense. In our paper, we formalize their sense of simulation, which we call “possibilistic simulation” or “p-simulation,” and construct explicit classical circuits that can p-simulate any depth-d quantum circuit with Clifford and t T-gates in depth O(d+t). Our classical circuits use {NOT,AND,OR} gates of fan-in ≤ 2.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Spin-squeezed Gottesman-Kitaev-Preskill codes for quantum error correction in atomic ensembles

Gottesman-Kitaev-Preskill (GKP) codes encode a qubit in displaced phase-space combs of a continuous-variable (CV) quantum system and are useful for correcting a variety of high-weight photonic errors. Here we propose atomic ensemble analogs of the single-mode CV GKP code by using the quantum central limit theorem to pull back the phase-space structure of a CV system to the compact phase space of a quantum spin system. We study the optimal recovery performance of these codes under error channels described by stochastic relaxation and isotropic ballistic dephasing processes using the diversity combining approach for calculating channel fidelity. Additionally, we find that the spin GKP codes outperform other spin system codes such as cat codes or binomial codes. Our spin GKP codes based on the two-axis countertwisting interaction and superpositions of SU(2) coherent states are direct spin analogs of the finite-energy CV GKP codes, whereas our codes based on one-axis twisting do not yet have well-studied CV analogs. A state preparation scheme for the spin GKP codes is proposed which uses the linear-combination-of-unitaries method, applicable to both the CV and spin GKP settings. Finally, we discuss a fault-tolerant approximate gate set for quantum computing with spin-GKP-encoded qubits, obtained by translating gates from the CV GKP setting using the quantum central limit theorem.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Strategies for simulating the time evolution of Hamiltonian lattice field theories

Simulating the time evolution of quantum field theories given some Hamiltonian H requires developing algorithms for implementing the unitary operator e -iHt . A variety of techniques exist that accomplish this task, with the most common technique used so far being Trotterization, which is a special case of the application of a product formula. However, other techniques exist that promise better asymptotic scaling in certain parameters of the theory being simulated, the most efficient of which are based on the concept of block encoding. In this work we study the performance of such algorithms in simulating lattice field theories. We derive and compare the asymptotic gate complexities of several commonly used simulation techniques in application to Hamiltonian lattice field theories. Using the scalar $\hat{φ}$ 4 theory as a test, we also perform numerical studies and compare the gate costs required by product formulas and signal-processing-based techniques to simulate time evolution. For the latter, we use the linear combination of unitaries (LCU) construction augmented with the quantum Fourier transform circuit to switch between the field and momentum eigenbases, which leads to immediate order-of-magnitude improvement in the cost of preparing the block encoding. Further, this paper also includes a pedagogical review of the techniques used, in particular product formulas, LCU, qubitization, quantum signal processing, as well as the technique for simulating geometrically-local Hamiltonians developed by Haah, Hastings, Kothari, and Low.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Universal control in bosonic systems with weak Kerr nonlinearities

Resonators with weak single-photon self-Kerr nonlinearities can theoretically be used to prepare Fock states in the presence of a loss much larger than their nonlinearities. Two necessary ingredients are large displacements and a two-photon (parametric) drive. Here, in this study, we find that these systems can be controlled to achieve any desired gate operation in a finite-dimensional subspace (whose dimensionality can be chosen at will). Moreover, we show that the two-photon driving requirement can be relaxed and that full controllability is achievable with only one-photon (linear) drives. We make use of both Trotter-Suzuki decompositions and gradient-based optimization to find control pulses for a desired gate, which reduces the computational overhead by using a small blockaded subspace. We also discuss the infidelity arising from input power limitations in realistic settings, as well as from corrections to the rotating-wave approximation. Our universal control protocol opens the possibility for quantum information processing using a wide range of lossy systems with weak nonlinearities.

Yuan, Ming [Univ. of Chicago, IL (United States)] ↗
DOE OSTI2022

Generation of Intense Low-Divergence Isolated Soft-X-Ray Attosecond Pulses in a Gas-Filled Waveguide Using Three-Color Synthesized Laser Pulses

Isolated attosecond pulses (IAPs) in the soft-x-ray (SXR) region have been successfully produced via high-order harmonic generation in a gas medium at several laboratories, but pulse energies are much lower compared to the IAPs in the extreme ultraviolet. Here, we show that in a gas-filled hollow waveguide, an efficient gating method using a few-cycle three-color synthesizer is able to generate stronger SXR IAPs. We show that an 104-as IAP in the SXR region (central energy of 210 eV) with a higher pulse energy (0.9 nJ) and a lower divergence (within 1.5 mrad) can be generated with a three-color laser beam for input pulse energy at 0.62 mJ, under the condition of optimal gas pressure and waveguide length. The enhancement of the IAP is attributed to favorable phase matching of SXR high harmonics caused by the evolution of the three-color waveform during its propagation in the waveguide, which can be understood by analyzing the time shift of the waveform due to the interplay of the waveguide mode, atomic dispersion, and plasma dispersion. We check that the gating method is quite robust with respect to the phase jitter in the waveform. The advantage of this method is further demonstrated by comparing the generation of SXR high harmonics and attosecond pulses with two other schemes: the three-color waveform in a gas cell and a previously optimized two-color waveform in a gas-filled waveguide.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Effective Landau-type model of a Hf x Zr 1 - x O 2 -graphene nanostructure

Here, to describe the charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1-x O 2 film with a single-layer graphene as a top electrode, we develop the “effective” Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf 1-x Zr x O 2 films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the Hf 1-x Zr x O 2 film polar properties on the film thickness, grain size and surface energy. The proposed Landau free energy with five “effective” expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf 1-x Zr x O 2 film influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 – 25) nm thick Hf 1-x Zr x O 2 films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 ≤ x ≤ 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs, because the working voltages applied to the Hf 1-x Zr x O 2 film (which acts as a gate) can be relatively low (less than 2 V). These low voltages are sufficient to induce the pronounced hysteresis of ferroelectric polarization in the Hf 1-x Zr x O 2 gate, which, due to the strong electric coupling, induces the hysteresis of the graphene charge.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure

In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v = 1 / 2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower S x x d at v = 1 / 2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal S x y d of v = 1 / 2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Majorana-based quantum computing in nanowire devices

The boundary of one-dimensional topological superconductors might lead to the appearance of Majorana zero modes, whose nontrivial exchange statistics can be used for quantum computing. In branched nanowire networks, one can exchange Majorana modes by time dependently tuning topologically nontrivial parameter regions. In this paper, we simulate the exchange of four Majorana modes in T-shaped junctions made out of $\textit{p}$-wave superconducting Rashba wires. Specifically, we derive concrete experimental predictions for (quasi-)adiabatic braiding times and determine geometric conditions for successful Majorana exchange processes. Moreover, we prove that, in the adiabatic limit, the gating time needs to be smaller than the inverse of the squared superconducting order parameter and scales linearly with the gating potential. Furthermore, we show how to circumvent the formation of additional Majorana modes in branched nanowire systems, arising at wire intersection points of narrow junctions. Finally, we propose a multiqubit setup, allowing for universal quantum computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Topological quantum switch and controllable one-dimensional conducting paths in antimonene facilitated by breaking the inversion symmetry

Based on the nontrivial topology of buckled antimonene, we propose two conceptual device designs based on breaking the inversion symmetry which can be achieved by gating. The first one is a quantized topological switch obtained by breaking the degeneracy of the fractionalized charge conducting edge states, inducing a metal-insulator transition. In the second one, using local gating with different polarity in different areas, a domain wall is created at their interface, which hosts a soliton type electronic gap state in which transport could be accessed by doping and shown to be robust over a wide range of disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronic structures, charge transfer, and charge order in twisted transition metal dichalcogenide bilayers

Moiré superlattices of transition metal dichalcogenide (TMD) bilayers have been shown to host correlated electronic states, which arise from the interplay of long wavelength moiré potential and long-range Coulomb interaction. Here, we theoretically investigate structural relaxation and single-particle electronic structure of twisted TMD homobilayer. From the large-scale density functional theory calculation and continuum model with layer degrees of freedom, we find that the out-of-plane gating field creates a tunable charge transfer gap at the Dirac point between the first and second moiré valence bands. We further study the charge orders at the fractional band fillings. In the flat band limit, we find from Monte Carlo simulations a series of charge-ordered insulating states at various fillings $n = \frac{1}{4}, \frac{1}{3}, \frac{1}{2}, \frac{2}{3}, 1$. Further, we predict that gating field induces a phase transition between different electron crystals at fixed filling $n = \frac{1}{2}$ or $\frac{2}{3}$. At half-filling $\textit{n} = 1$, the ground state is a Mott insulator with electronically driven ferroelectricity. This work demonstrates that TMD homobilayer provides a powerful platform for the investigation of tunable charge transfer insulator and charge orders.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. Furthermore, the observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Voltage-controlled long-range propagation of indirect excitons in a van der Waals heterostructure

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. Here, a proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by high binding energies making IXs robust at room temperature and offering an opportunity to create excitonic devices operating at high temperatures suitable for applications. However, a characteristic feature of TMD heterostructures is the presence of moiré superlattice potentials, which are predicted to cause modulations of IX energy reaching tens of meV. These in-plane energy landscapes can lead to IX localization, making IX propagation fundamentally different in TMD and GaAs heterostructures and making uncertain whether long-range IX propagation, sufficiently long to allow for creating elaborate excitonic devices and circuits, can be realized in TMD heterostructures. In this work, we realize long-range IX propagation with the 1/e IX luminescence decay distances reaching 13 microns in a MoSe 2 /WSe 2 heterostructure. We trace the IX luminescence along the IX propagation path. In the presented TMD materials, the long-range IX propagation occurs up to ~50 K. This is a step toward the room temperature operation, which can be realized in TMD heterostructures due to the high IX binding energy. We also realize control of the long-range IX propagation by voltage. The IX luminescence signal in the drain of an excitonic transistor is controlled within 40 times by gate voltage. The control of the IX propagation in the MoSe 2 /WSe 2 heterostructure is governed by new mechanisms, beyond the mechanism for controlling IX transport by an energy barrier to IX propagation (or a trap for IXs) created by the gate electrode, known since the studies of GaAs heterostructures. We discuss the origin of the voltage-controlled long-range IX propagation in the MoSe 2 /WSe 2 heterostructure, in particular, the electric-field control of the moiré potential.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Melting phase diagram of bubble phases in high Landau levels

A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine interplay between short- and long-range interactions stabilizes bubble phases, Wigner crystals with more than one electron per unit cell. In this work, we present the screening properties of bubble phases, probed via a simple capacitance technique where the 2DES is placed between a top and a bottom gate and the electric field penetrating through the 2DES is measured. The bubbles formed at very low temperatures screen the electric field poorly as they are pinned by the residual disorder potential, allowing a large electric field to reach the top gate. As the temperature is increased, the penetrating electric field decreases and, surprisingly, exhibits a pronounced minimum at a temperature that appears to coincide with the melting temperature of the bubble phase. We deduce a quantitative phase diagram, as a function of Landau level filling factor (ν) and temperature, for the transition from the bubble to liquid phases for 4 ≤ ν ≤ 5.

2-dimensional systems↗
DOE OSTI2022

Integrable nonunitary quantum circuits

Here we show that the integrable Lindblad superoperators found recently can be used to build integrable nonunitary quantum circuits with two-site gates by demonstrating that the R(SIC) matrices are completely positive and trace preserving. Using the bond-site transformation, we obtain the corresponding integrable nonunitary quantum circuits with three-site gates. When restricted to the diagonals of the density matrix, these quantum models reduce to integrable classical cellular automata. This approach may pave the way for a systematic construction of circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Adaptive variational ground state preparation for spin-1 models on qubit-based architectures

Here, we apply the adaptive variational quantum imaginary time evolution (AVQITE) method to prepare ground states of one-dimensional spin S = 1 models. We compare different spin-to-qubit encodings (standard binary, Gray, unary, and multiplet) with regard to the performance and quantum resource cost of the algorithm. Using state-vector simulations, we study two well-known spin-1 models: the Blume-Capel model of transverse-field Ising spins with single-ion anisotropy, and the XXZ model with single-ion anisotropy. We consider system sizes of up to 20 qubits, which corresponds to spin-1 chains up to length 10. We determine the dependence of the number of CNOT gates in the AVQITE state preparation circuit on the encoding, the initial state, and the choice of operator pool in the adaptive method. Independent of the choice of encoding, we find that the CNOT gate count scales cubically with the number of spins for the Blume-Capel model and quartically for the anisotropic XXZ model. However, the multiplet and Gray encodings present smaller prefactors in the scaling relations. These results provide useful insights for the implementation of AVQITE on quantum hardware.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ultrafast exciton and trion dynamics in highly 𝑛-doped Mo⁢S 2 monolayers: Many-body effects

Understanding many-body interactions of excitons and charge carriers in monolayer semiconductors is crucial for tuning their unique optical properties and optimizing their performance in optoelectronic devices. However, the sensitivity of these atomically thin semiconductors to doping, defects, and strain–arising from synthesis, substrate, and environmental conditions–hinders consistent observation of many-body effects. In this work, we employed linear and ultrafast transient optical absorption spectroscopy to investigate the influence of background doping on exciton many-body interactions in Mo⁢S 2 monolayers. Using reversible molecular physisorption gating, we achieved a high background doping density of 4.9 × 10 13 c⁢m −2 in an argon environment, which is significantly higher than those attainable with conventional electrical gating. Our results reveal a photoinduced 𝐴-exciton resonance redshift, attributed to band-gap renormalization at a low background-doping density of 4.3 × 10 12 c⁢m −2 in an air environment, transitioning to a blueshift at a high background-doping density of 4.9 × 10 13 c⁢m −2 due to dominant Pauli blocking effects and vertical excitation shifts. We further observed transient energy splitting between free-exciton and -trion states up to 57 meV due to exciton-electron interactions. The ultrafast spectroscopy further revealed exciton and trion dynamics, including fast energy splitting of exciton and trion resonances within 1 picosecond (ps) followed by a rapid decay having a lifetime of ∼5.4 ps. Furthermore, our results demonstrate the critical role of background-doping conditions in tuning many-body interactions and quasiparticle dynamics in 2D semiconductors, providing valuable insights for future device design and material engineering.

Doped semiconductors↗
DOE OSTI2025

Adaptive variational quantum dynamics simulations with compressed circuits and fewer measurements

The adaptive variational quantum dynamics simulation (AVQDS) method performs real-time evolution of quantum states using automatically generated parametrized quantum circuits that often contain substantially fewer gates than Trotter circuits. Here we report an improved version of the method, which we call AVQDS(T), by porting the tiling efficient trial circuits with rotations implemented simultaneously technique. The algorithm adaptively adds layers of disjoint unitary gates to the ansatz circuit so as to keep the McLachlan distance, a measure of the accuracy of the variational dynamics, below a fixed threshold. Here we perform benchmark noiseless AVQDS(T) simulations of quench dynamics in local spin models and compare with an alternative adaptive variational approach on quantum resource requirement. Quantum dynamical simulations implementing realistic noise channels are also reported. Finally, we propose a way to substantially alleviate the measurement overhead of AVQDS(T) while maintaining high accuracy by synergistically integrating quantum circuit calculations on quantum processing units with classical calculations using, e.g., tensor networks to evaluate the quantum geometric tensor. We showcase that this approach enables AVQDS(T) to deliver more accurate results than simulations using a fixed ansatz of comparable final depth for a significant time duration with fewer quantum resources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗