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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Geometric scattering of a scalar particle moving on a curved surface in the presence of point defects

A nonrelativistic scalar particle that is constrained to move on an asymptotically flat curved surface undergoes a geometric scattering that is sensitive to the mean and Gaussian curvatures of the surface. A careful study of possible realizations of this phenomenon in typical condensed matter systems requires dealing with the presence of defects. We examine the effect of delta-function point defects residing on a curved surface S. In particular, we solve the scattering problem for a multi-delta-function potential in plane, which requires a proper regularization of divergent terms entering its scattering amplitude, and include the effects of nontrivial geometry of S by treating it as a perturbation of the plane. This allows us to obtain analytic expressions for the geometric scattering amplitude for a surface consisting of one or more Gaussian bumps. In general the presence of the delta-function defects enhances the geometric scattering effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Critical density of topological defects upon a continuous phase transition

Using extensive Monte Carlo simulations, we test the hypothesis that the density of corresponding topological defects has a universal value at the temperature of a continuous phase transition. We consider several simple two-dimensional models where domain walls, vortices, so-called Z{sub 2} vortices or their combinations are presented. These topological defects are relevant correspondingly to an Ising second-order phase transition, a Berezinskii–Kosterlitz–Thouless transition and an explicit crossover. We compare results for square and triangular lattices as well as for the complicated situation when two types of defects are presented and two transitions occur separated in temperature. All considered cases demonstrate consentient results confirming the hypothesis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

HCOOH Decomposition on Sub-Nanometer Pd 6 Cluster Catalysts: The Effect of Defective Boron Nitride Supports Through First Principles

The catalytic properties of a hexagonal boron nitride- (h-BN) supported Pd 6 sub-nanometer cluster in the context of formic acid (HCOOH) decomposition were studied by means of periodic Density Functional Theory (DFT) calculations. The effect of support defectivity – boron (h-B v N) and nitrogen (h-BN v ) monovacancies – on the competition between the formate (HCOO)- and carboxyl (COOH)-mediated decomposition pathways was analyzed. Defects are responsible for charge-transfer leading to a positively or negatively charged cluster, and open new reactive channels in which vacancy-mediated dehydrogenation pathways can occur. Pd 6 cluster reconstructions, induced by the adsorption of reaction intermediates and by the presence of monovacancies in the support, greatly stabilize the formation of CO from COOH, which could drastically decrease the selectivity towards hydrogen production. Here, a simplified descriptor-based analysis, based on selected thermochemical quantities calculated on charged cluster models, suggests that Pd 6 sub-nanometer clusters supported on pristine h-BN and h-BN v can be more selective than Pd 6 supported on defective h-B v N towards HCOOH dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)

Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Controllable oxygen vacancy defect engineering of BiVO 4 porous structures for room temperature NH 3 detection

Controlling structural features of sensing material while judiciously introducing vacancy defect states for revamping the electronic properties of the sample to obtain its superior gas sensing performance, is quite rare. Herein, we report for the first time, the room temperature (RT) ammonia (NH 3 ) detection of peanut-like porous bismuth vanadate (BiVO 4 ) with a stable monoclinic phase. The developed BiVO 4 possess abundant oxygen vacancies and porosity by virtue of calcinations (400–800 ℃). BiVO 4 calcined at 400 ℃ exhibits high selectivity towards NH 3 with a maximum response of 1421 @ 270 ppm at RT, which is 2.5 fold enhanced compared to without calcined BiVO 4 (response of 547 @ 270 ppm NH 3 ). The oxygen defective BiVO 4 appeared highly durable and stable even under high humid conditions (∼60 %). Besides, the porosity of BiVO 4 not only enhances the specific surface area (19.8 m 2 /g) but also results in fast diffusion of NH 3 molecules, leading to a reduction in the decay time (34 s for 90 ppm NH 3 ). The density functional theory (DFT) uncovers that the oxygen vacancy formation in BiVO 4 augments the NH 3 sensing capabilities by enhancing the adsorption energy of NH 3 . This work provides insight into the sensing mechanism of increased response caused by defect engineering and porosity, which will be favourable for fabricating high-performance NH 3 sensors at RT.

DFT analysis↗
DOE OSTI2016

Ab initio study of point defects near stacking faults in 3C-SiC

Interactions between point defects and stacking faults in 3C-SiC are studied using an ab initio method based on density functional theory. The results show that the discontinuity of the stacking sequence considerably affects the configurations and behavior of intrinsic defects, especially in the case of silicon interstitials. The existence of an intrinsic stacking fault (missing a C-Si bilayer) shortens the distance between the tetrahedral-center site and its second-nearest-neighboring silicon layer, making the tetrahedral silicon interstitial unstable. Instead of a tetrahedral configuration with four C neighbors, a pyramid-like interstitial structure with a defect state within the band gap becomes a stable configuration. In addition, orientation rotation occurs in the split interstitials that has diverse effects on the energy landscape of silicon and carbon split interstitials in the stacking fault region. Moreover, our analyses of ionic relaxation and electronic structure of vacancies show that the built-in strain field, owing to the existence of the stacking fault, makes the local environment around vacancies more complex than that in the bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Multi defect detection and analysis of electron microscopy images with deep learning

Electron microscopy is widely used to explore defects in crystal structures, but human detecting of defects is often time-consuming, error-prone, and unreliable, and is not scalable to large numbers of images or real-time analysis. In this work, we discuss the application of machine learning approaches to find the location and geometry of different defect clusters in irradiated steels. We show that a deep learning based Faster R-CNN analysis system has a performance comparable to human analysis with relatively small training data sets. Furthermore, this study proves the promising ability to apply deep learning to assist the development of automated microscopy data analysis even when multiple features are present and paves the way for fast, scalable, and reliable analysis systems for massive amounts of modern electron microscopy data.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Revealing mechanisms of processing defect mitigation in laser powder bed fusion via shaped beams using high-speed X-ray imaging

The laser powder bed fusion (LPBF) process utilizing a focused Gaussian-shaped beam faces challenges, including pore formation, melt pool fluctuation and liquid spattering. While beam shaping technology has been explored as a potential approach for defect mitigation, the beam-matter interaction dynamics during melting with shaped beams remain unclear. Here, we report the direct observation of ring-shaped beam-matter interaction dynamics, including pore formation, melt pool fluctuation and liquid spattering, and unveil defect mitigation mechanisms in ring-shaped beam laser powder bed fusion process. Here, we find that, by spatially manipulating incident laser rays, the ring-shaped beam controls keyhole morphology, thereby managing the distribution of the reflected rays. This manipulation can effectively eliminate the formation of an unstable cavity at the keyhole tip, stabilizing the keyhole and mitigating keyhole pores. This enhanced keyhole stability effectively reduces the melt pool fluctuation, the formation of liquid breakup induced spatters and liquid droplet colliding induced large spatters in the laser powder bed fusion process. Additionally, the high-energy forefront of the ring-shaped beam effectively melts the powder bed, reducing agglomeration liquid spatter in the laser powder bed fusion process. The discovered defect mitigation mechanisms may guide the design of beam shaping strategies for simultaneously increasing the quality and productivity of metal additive manufacturing.

Beam shaping↗
DOE OSTI2012

Single crystal growth of Ga[subscript 2](Se[subscript x]Te[subscript 1;#8722;x])[subscript 3] semiconductors and defect studies via positron annihilation spectroscopy

Small single crystals of Ga{sub 2}(Se{sub x}Te{sub 1-x}){sub 3} semiconductors, for x = 0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga{sub 2}Te{sub 3}. Defect studies via positron annihilation spectroscopy show an average positron lifetime of {approx} 400 ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Effects of twin boundaries and pre-existing defects on mechanical properties and deformation mechanisms of yttria-stabilized tetragonal zirconia

In annealing of yttria-stabilized tetragonal zirconia (YSTZ), {011}-specific twins and sub-surface defects are often observed, however their effects on the martensitic phase transformation and deformation behavior of YSTZ have never been investigated. In this work, the roles of twin boundaries (TBs) and pre-existing defects in determining the mechanical properties and subsequent deformation mechanisms of YSTZ nanopillars are studied. Using large-scale molecular dynamics simulations, we show that Young’s modulus and strength of YSTZ decrease with the increase of TB density, but the ductility of YSTZ pillars increases. Phase transformation behavior is found to be correlated to TB density. The sensitivity of mechanical responses of twinned structures to pre-existing defects is also studied. A competitive mechanism between TB-induced phase transformation and void-induced phase transformation is observed. When the diameter of a pre-existing void is smaller than a critical value, only TB-induced phase transformation occurs, which leads to void-insensitive mechanical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Formation of I 1 stacking fault by deformation defect evolution from grain boundaries in Mg

I 1 stacking faults (SFs) in Mg alloys are regarded as the nucleation sites of $\langle \text{c+a} \rangle$ dislocations that are critical for these alloys to achieve high ductility. Previously it was proposed that the formation of I 1 SFs requires the accumulations of a large number of vacancies, which are difficult to achieve at low temperatures. In this study, molecular dynamics (MD) and molecular statics (MS) simulations based on empirical interatomic potentials were applied to investigate the deformation defect evolutions from the symmetric tilt grain boundaries (GBs) in Mg and Mg-Y alloys under external loading along $\langle c \rangle$-axis. The results show the planar faults (PFs) on Pyramidal I planes first appear due to the nucleation and glide of $\langle {\frac {1}{2}}c + p\rangle$ partial dislocations from GBs, where $\langle p\rangle$ = ${\frac {1}{3}} \langle10\bar{1}0\rangle$. These partial dislocations with pyramidal PFs interact with other defects, including pyramidal PFs themselves, GBs, and $\langle p\rangle$ partial dislocations, generating a large amount of I 1 SFs. Detailed analyses show the nucleation and growth of I 1 SFs are achieved by atomic shuffle events and deformation defect reactions without the requirements of vacancy diffusion. Our simulations also suggest the Y clusters at GBs can reduce the critical stress for the formation of pyramidal PFs and I 1 SFs, which provide a possible reason for the experimental observations that Y promotes the $\langle{\text{c+a}}\rangle$ dislocation activities.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Defect structures induced by high-energy displacement cascades in γ uranium

Displacement cascade simulations were conducted for the c uranium system based on molecular dynamics. A recently developed modified embedded atom method (MEAM) potential was employed to replicate the atomic interactions while an embedded atom method (EAM) potential was adopted to help characterize the defect structures induced by the displacement cascades. The atomic displacement process was studied by providing primary knock-on atoms (PKAs) with kinetic energies from 1 keV to 50 keV. The influence of the PKA incident direction was examined. The defect structures were analyzed after the systems were fully relaxed. The states of the self-interstitial atoms (SIAs) were categorized into various types of dumbbells, the crowdion, and the octahedral interstitial. The voids were determined to have a polyhedral shape with {110} facets. The size distribution of the voids was also obtained. The results of this study not only expand the knowledge of the microstructural evolution in irradiated c uranium, but also provide valuable references for the radiation-induced defects in uranium alloy fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2013

Phase separation and antisite defects in the thermoelectric TiNiSn half-Heusler alloys

The half-Heusler TiNiSn alloys have recently gained an attention as promising candidates for thermoelectric applications. Improvement of these alloys for such applications can be obtained by both electronic and compositional optimizations. The latter can result in a miscibility gap, allowing a phase separation in the nano-scale and consequently a thermal conductivity reduction. Combination of ab initio calculations and statistical thermodynamics was applied for studying the relative stability of a number of superstructures in TiNiSn based alloys. The quasi-binary phase diagram beyond T=0 K for TiNiSn–TiNi{sub 2}Sn solid solutions was calculated using energy parameters extracted from the total energy calculations for ordered structures in the Ni sublattice. We demonstrated that a decomposition of the off-stoichiometric Ni-rich half-Heusler alloy into the stoichiometric TiNiSn phase and into Ni deficient Heusler TiNi{sub 2}Sn phase occurs at elevated temperatures—an effect which recently had been observed experimentally. Furthermore, favorable energetic conditions for antisite defects formation were deduced, based on calculations of the energy of formation, an effect which was explained as a cooperative process of partial disordering on the Ni sublattice. The influence of these two effects on improvement of the thermoelectric performance of TiNiSn based half Heusler compounds is discussed. - Graphical abstract: Phase separation and antisite defects in the thermoelectric TiNiSn alloy, are covered as methods for nanostructuring and thereby enhancement of the thermoelectric potential. - Highlights: • Ab initio calculations/statistical thermodynamics was applied for studying the TiNiSn system. • The phase diagram for TiNiSn–TiNi{sub 2}Sn solid solutions was calculated. • Decomposition of the Ni-rich HH into TiNiSn and Ni deficient TiNi{sub 2}Sn phases was observed. • Favorable energetic conditions for antisite defects formation were deduced.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Synthesis and crystal structure characterization of InGaZnO{sub 4} with a new defect structure

Single crystals of InGaZnO{sub 4} were synthesized in a sealed Pt-tube at elevated temperatures under normal pressure without flux. InGaZnO{sub 4} has a trigonal crystal system (R3{sup ¯}m; No. 166) deduced from convergent beam electron diffraction (CBED). Single crystal structure refinement from XRD data at −150 °C (a=3.275(1) Å; c=25.99(1) Å; Z=3) revealed an alternate stacking of InO{sub 6/3}{sup −} and (Ga,Zn)O{sub 4/4}{sup +} layers, iso-structural to YbFe{sub 2}O{sub 4}. The cell parameters at room temperature were refined from powder X-ray diffraction data (a=3.284(3) Å and c=26.037(3) Å). The transparent crystals have a gray-bluish color and exhibit an excess of Ga expressed by the cation ratio of In:Ga:Zn=30.2(9):39(1):31(1) determined by energy dispersive X-ray spectroscopy (EDXS). While the isovalent substitution of In{sup 3+} by Ga{sup 3+} is known, an additional aliovalent substitution of Zn{sup 2+} by Ga{sup 3+} is observed. This results in the formula (In{sub 0.9}Ga{sub 0.1})Ga{sub 1.06}Zn{sub 0.91}□{sub 0.03}O{sub 4} where 3% of the cations in 4+1 coordination are vacant due to aliovalent substitution. Further evidence of that defect structure is found in the lattice parameter a which is substantially smaller than in stoichiometric InGaZnO{sub 4}, as well as in the strong absorption in the near-IR from transitions correlated with the defect structure. The bluish color of the crystals is due to an enhanced absorption in the red of the visible spectrum. For the first time, we achieved to image InGaZnO{sub 4} at atomic resolution in the electron microscope proving a perfect periodic stacking of atomic layers. - Graphical abstract: Single crystals of InGaZnO{sub 4} have been synthesized at ambient pressure and analyzed with X-ray diffraction, electron microscopy, and optical absorption. Optical band gap and optical transmission have been determined. - Highlights: • Preparation of single crystals of InGaO{sub 3}(ZnO){sub 1} at ambient pressure for the first time. • Non-stoichiometric compound (In{sub 0.9}Ga{sub 0.1})Ga{sub 1.06}Zn{sub 0.91}□{sub 0.03}O{sub 4} with defect structure, excess of Ga, depletion of Zn. • Real structure of InGaO{sub 3}(ZnO){sub 1} imaged by high resolution TEM for the first time. • Optical band gap and transmission of InGaO{sub 3}(ZnO){sub 1} single crystal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Nanoscale interlayer defects in iron arsenides

Using a local real-space microscopy probe, we investigate evidence of nanoscale interlayer defects along the c-crystallographic direction in BaFe 2 As 2 (‘122’) based iron-arsenide superconductors. We find ordered 122 atomic arrangements within the ab -plane, and within regions of ~10 to 20 nm size perpendicular to this plane. While the FeAs substructure is very rigid, Ba ions are relatively weakly bound and can be displaced from the 122, forming stacking faults resulting in the physical separation of the 122 between adjacent ordered domains. The evidence for interlayer defects between the FeAs superconducting planes gives perspective on the minimal connection between interlayer chemical disorder and high-temperature superconductivity. Specifically, the Cooper pairs may be finding a way around such localized interlayer defects through a percolative path of the ordered layered 122 lattice that may not affect T c .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Impact of interfaces on the radiation response and underlying defect recovery mechanisms in nanostructured Cu-Fe-Ag

Newest developments in nuclear fission and fusion technology as well as planned long-distance space missions demand novel materials to withstand harsh, irradiative environments. Radiation-induced hardening and embrittlement are a concern that can lead to failure of materials deployed in these applications. Here the underlying mechanisms are accommodation and clustering of lattice defects created by the incident radiation particles. Interfaces, such as free surfaces, phase and grain boundaries, are known for trapping and annihilating defects and therefore preventing these radiation-induced defects from forming clusters. In this work, differently structured nanocomposite materials based on Cu-Fe-Ag were fabricated using a novel solid-state route, combining severe plastic deformation with thermal and electrochemical treatments. The influence of different interface types and spacings on radiation effects in these materials was investigated using nanoindentation. Interface-rich bulk nanocomposites showed a slight decrease in hardness after irradiation, whereas the properties of a nanoporous material remain mostly unchanged. An explanation for this different material behavior and its link to recovery mechanisms at interfaces is attempted in this work, paving a concept towards radiation resistant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effect of laser power on defect, texture, and microstructure of a laser powder bed fusion processed 316L stainless steel

The effect of laser power on defect characteristics, microstructure development, constituent phases, and crystallographic texture was studied on a laser powder bed fusion (L-PBF) processed 316L stainless steel. A series of cylindrical specimens were additively manufactured as a function of laser power ranging from 380 to 200W with a fixed scan speed of 300 mm/s using a selective laser melting system. The density (in terms of count, surface area, and porosity), size (mean values of major axis length, surface area, and volume), shape (aspect ratio and sphericity), and orientation (in terms of the angle between the major axis and build direction) of macroscopic defects in as-printed L-PBF cylinders were characterized using high-resolution synchrotron x-ray computed microtomography with a 0.65μm resolution. Moreover, the changes in the preferred crystallographic orientations and constituent phases were investigated using high-energy synchrotron x-ray diffraction. Finally, the melt pool shape and grain size/orientation were analyzed using metallography. The results show that the porosity increases linearly from 0.13 to 0.88% with the decrease in laser power. However, even with the decrease in laser power by about half and corresponding seven-fold increase in porosity, the 200W case can still be considered as nearly fully dense. On the other hand, with the same decrease in the laser power, the melt pool size/shape, grain size, and texture changed significantly. In conclusion, the role of energy input in the simultaneous changes in defect properties and microstructure development will be discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs

The generation of planar defects in silicon nanowires (SiNWs) synthesized by means of a vapor–liquid–solid (VLS) procedure using Au as a catalyst in an ultra-high vacuum chemical vapor deposition (UHV-CVD) system was investigated. Faceting, the formation of planar defects and the diffusion of Au in SiNWs occurred simultaneously, proportional to the growth temperature and the ratio of the H{sub 2} precursor gas. The planes located on the sidewalls of the wire after Au diffusion were faceted (1 1 1) and (1 0 0) surfaces, which represent equilibrium configurations of Si due to surface energy minimization during rapid wire growth under unstable conditions. Moreover, (1 1 1) twin defects were formed on the sidewalls of the faceted boundaries where the Au clusters were mainly located, due to the surface tension of the Au atoms, resulting in clusters at the liquid/solid interfaces in SiNWs with a 〈1 1 1〉 growth direction.

36 MATERIALS SCIENCE↗