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At least 1,459 records · Page 81

High-voltage monocrystalline Si photovoltaic minimodules based on poly -Si/SiO x passivating contacts for high-power laser power conversion

By using photovoltaic cells under high-intensity laser illumination, much higher photoconversion efficiencies are obtained than under the solar spectrum. Here we demonstrate a monocrystalline Si based minimodule to convert laser light into electricity using edge-illuminated Si "minicells" based on polysilicon on silicon oxide passivating contacts. Ten fully metallized devices were stacked in series and illuminated from the edge, creating a high-voltage, low-current minimodule that mitigates resistive and Auger-Meitner losses. The minimodule shows a high open-circuit voltage of >5 V when tested under 1-Sun illumination and >7 V at higher illumination intensities when tested with a flash simulator. The fill factor in these minimodules is limited by shunting at low illuminations but reaches a maximum of ~78% for higher illumination intensities >40 Suns (current density >1200 mA/cm 2 ), indicating that the minimodules are not limited by series resistance up to 40 Suns. Under 1000 nm monochromatic light, we measure efficiencies >40% at > 40 Suns equivalent illumination, showing the potential of passivated contact Si cells for laser power conversion.

14 SOLAR ENERGY↗

The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2} + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O{sub 2}/(O{sub 2} + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multistability in Chua's circuit with two stable node-foci

Only using one-stage op-amp based negative impedance converter realization, a simplified Chua's diode with positive outer segment slope is introduced, based on which an improved Chua's circuit realization with more simpler circuit structure is designed. The improved Chua's circuit has identical mathematical model but completely different nonlinearity to the classical Chua's circuit, from which multiple attractors including coexisting point attractors, limit cycle, double-scroll chaotic attractor, or coexisting chaotic spiral attractors are numerically simulated and experimentally captured. Furthermore, with dimensionless Chua's equations, the dynamical properties of the Chua's system are studied including equilibrium and stability, phase portrait, bifurcation diagram, Lyapunov exponent spectrum, and attraction basin. The results indicate that the system has two symmetric stable nonzero node-foci in global adjusting parameter regions and exhibits the unusual and striking dynamical behavior of multiple attractors with multistability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗

Alternative model of space-charge-limited thermionic current flow through a plasma

It is widely assumed that thermionic current flow through a plasma is limited by a “space-charge-limited” (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. In this paper, we formulate a fundamentally different current-limited mode. In the “inverse” mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. Finally, the inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The in-silico lab-on-a-chip: petascale and high-throughput simulations of microfluidics at cell resolution

We present simulations of blood and cancer cell separation in complex microfluidic channels with subcellular resolution, demonstrating unprecedented time to solution, performing at 65.5% of the available 39.4 PetaInstructions/s in the 18, 688 nodes of the Titan supercomputer. These simulations outperform by one to three orders of magnitude the current state of the art in terms of numbers of simulated cells and computational elements. The computational setup emulates the conditions and the geometric complexity of microfluidic experiments and our results reproduce the experimental findings. These simulations provide sub-micron resolution while accessing time scales relevant to engineering designs. We demonstrate an improvement of up to 45X over competing state-of-the-art solvers, thus establishing the frontiers of simulations by particle based methods. Our simulations redefine the role of computational science for the development of microfluidics –- a technology that is becoming as important to medicine as integrated circuits have been to computers.

Computer Science↗

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗

Simulation and flight studies of an approach profile indicator for VTOL aircraft

Simulation and flight investigations were conducted by using a method of providing supplementary information to the pilot in conjunction with a closed-circuit-television display during a VTOL instrument final approach including deceleration and hover. The supplementary information included range, cross range, ground speed, altitude, and rate-of-climb error and was displayed on an instrument called an approach profile indicator. The display was arranged to provide both quasi-command and situation information. Pilot comments indicated that the approach-profile-indicator display concept in conjunction with the closed-circuit television resulted in a decreased pilot workload and an increase in pilot confidence. Also, the results indicated that the approach profile repeatability was significantly improved because of the ground-speed and altitude information provided on the approach profile indicator.

Moen, G. C.↗

The effects of lunar dust accumulation on the performance of photovoltaic arrays

Lunar base activity, particularly rocket launch and landing, will suspend and transport lunar dust. From preliminary models, the resulting dust accumulation can be significant, even as far as 2 km from the source. For example, at 2 km approximately 0.28 mg/sq cm of dust is anticipated to accumulate after only 10 surface missions with a 26,800 N excursion vehicle. The possible associated penalties in photovoltaic array performance were therefore the subject of experimental as well as theoretical investigation. To evaluate effects of dust accumulation on relative power output, current-voltage characteristics of dust-covered silicon cells were determined under the illumination of a Spectrolab X-25L solar simulator. The dust material used in these experiments was a terrestrial basalt which approximated lunar soil in particle size and composition. Cell short circuit current, an indicator of the penetrating light intensity, was found to decrease exponentially with dust accumulation. This was predicted independently by modeling the light occlusion caused by a growing layer of dust particles. Moreover, the maximum power output of dust-covered cells, derived from the I-V curves, was also found to degrade exponentially. Experimental results are presented and potential implications discussed.

Katzan, Cynthia M.↗

Application of the GRC Stirling Convertor System Dynamic Model

The GRC Stirling Convertor System Dynamic Model (SDM) has been developed to simulate dynamic performance of power systems incorporating free-piston Stirling convertors. This paper discusses its use in evaluating system dynamics and other systems concerns. Detailed examples are provided showing the use of the model in evaluation of off-nominal operating conditions. The many degrees of freedom in both the mechanical and electrical domains inherent in the Stirling convertor and the nonlinear dynamics make simulation an attractive analysis tool in conjunction with classical analysis. Application of SDM in studying the relationship of the size of the resonant circuit quality factor (commonly referred to as Q) in the various resonant mechanical and electrical sub-systems is discussed.

Regan, Timothy F.↗

NASA Tech Briefs, December 2013

Topics include: Microwave Kinetic Inductance Detector With; Selective Polarization Coupling; Flexible Microstrip Circuits for; Superconducting Electronics; CFD Extraction Tool for TecPlot From DPLR Solutions; RECOVIR Software for Identifying Viruses; Enhanced Contact Graph Routing (ECGR) MACHETE Simulation Model; Orbital Debris Engineering Model (ORDEM) v.3; Scatter-Reducing Sounding Filtration Using a Genetic Algorithm and Mean Monthly Standard Deviation; Thermo-Mechanical Methodology for Stabilizing Shape Memory Alloy Response; Hermetic Seal Designs for Sample Return Sample Tubes; Silicon Alignment Pins: An Easy Way To Realize a Wafer-to-Wafer Alignment; Positive-Buoyancy Rover for Under Ice Mobility; Electric Machine With Boosted Inductance to Stabilize Current Control; International Space Station-Based Electromagnetic Launcher for Space Science Payloads; Advanced Hybrid Spacesuit Concept Featuring Integrated Open Loop and Closed Loop Ventilation Systems; Data Quality Screening Service.

Source record↗

The battle of clean and dirty qubits in the era of partial error correction

When error correction becomes possible it will be necessary to dedicate a large number of physical qubits to each logical qubit. Error correction allows for deeper circuits to be run, but each additional physical qubit can potentially contribute an exponential increase in computational space, so there is a trade-off between using qubits for error correction or using them as noisy qubits. In this work, we look at the effects of using noisy qubits in conjunction with noiseless qubits (an idealized model for error-corrected qubits), which we call the “clean and dirty” setup. We employ analytical models and numerical simulations to characterize this setup. Numerically we show the appearance of Noise-Induced Barren Plateaus (NIBPs), i.e., an exponential concentration of observables caused by noise, in an Ising model Hamiltonian variational ansatz circuit. We observe this even if only a single qubit is noisy and given a deep enough circuit, suggesting that NIBPs cannot be fully overcome simply by error-correcting a subset of the qubits. On the positive side, we find that for every noiseless qubit in the circuit, there is an exponential suppression in the concentration of gradient observables, showing the benefit of partial error correction. Finally, our analytical models corroborate these findings by showing that observables concentrate with a scaling in the exponent related to the ratio of dirty-to-total qubits.

97 MATHEMATICS AND COMPUTING↗

The battle of clean and dirty qubits in the era of partial error correction

When error correction becomes possible it will be necessary to dedicate a large number of physical qubits to each logical qubit. Error correction allows for deeper circuits to be run, but each additional physical qubit can potentially contribute an exponential increase in computational space, so there is a trade-off between using qubits for error correction or using them as noisy qubits. In this work we look at the effects of using noisy qubits in conjunction with noiseless qubits (an idealized model for error-corrected qubits), which we call the "clean and dirty" setup. We employ analytical models and numerical simulations to characterize this setup. Numerically we show the appearance of Noise-Induced Barren Plateaus (NIBPs), i.e., an exponential concentration of observables caused by noise, in an Ising model Hamiltonian variational ansatz circuit. We observe this even if only a single qubit is noisy and given a deep enough circuit, suggesting that NIBPs cannot be fully overcome simply by error-correcting a subset of the qubits. On the positive side, we find that for every noiseless qubit in the circuit, there is an exponential suppression in concentration of gradient observables, showing the benefit of partial error correction. Finally, our analytical models corroborate these findings by showing that observables concentrate with a scaling in the exponent related to the ratio of dirty-to-total qubits.

97 MATHEMATICS AND COMPUTING↗

Mechanical and electrochemical response of a LiCoO 2 cathode using reconstructed microstructures

As LiCoO 2 cathodes are charged, delithiation of the LiCoO 2 active material leads to an increase in the lattice spacing, causing swelling of the particles. When these particles are packed into a bicontinuous, percolated network, as is the case in a battery electrode, this swelling leads to the generation of significant mechanical stress. In this study we performed coupled electrochemical-mechanical simulations of the charging of a LiCoO 2 cathode in order to elucidate the mechanisms of stress generation and the effect of charge rate and microstructure on these stresses. Energy dispersive spectroscopy combined with scanning electron microscopy imaging was used to create 3D reconstructions of a LiCoO 2 cathode, and the Conformal Decomposition Finite Element Method is used to automatically generate computational meshes on this reconstructed microstructure. Replacement of the ideal solution Fickian diffusion model, typically used in battery simulations, with a more general non-ideal solution model shows substantially smaller gradients of lithium within particles than is typically observed in the literature. Using this more general model, lithium gradients only appear at states of charge where the open-circuit voltage is relatively constant. While lithium gradients do affect the mechanical stress state in the particles, the maximum stresses are always found in the fully-charged state and are strongly affected by the local details of the microstructure and particle-to-particle contacts. These coupled electrochemical-mechanical simulations begin to yield insight into the partitioning of volume change between reducing pore space and macroscopically swelling the electrode. Lastly, preliminary studies that include the presence of the polymeric binder suggest that it can greatly impact stress generation and that it is an important area for future research.

25 ENERGY STORAGE↗

Simulation of Impedance Changes with Aging in Lithium Titanate-based Cells Using Physics-Based Dimensionless Modeling

Quantifying aging effects in lithium-ion cells with chemistries that have a flat open circuit potential is challenging. We implement a physics-based electrochemical model to track changes in the electrochemical impedance response of lithium titanate-based cells. Frequency domain equations of a pseudo two-dimensional model are made dimensionless, and the corresponding non-dimensional parameters are estimated using a Levenberg-Marquardt routine. The model weighs the relative contributions of changes in diffusion, ionic conduction within the electrolyte phase against solid phase electronic conduction towards cell aging. Solid-phase diffusion, charge transfer resistance and double layer capacitance at the solid-liquid interface are accounted for in the particle impedance. The estimation routine tracks dimensionless parameters using accelerated cycling data from full cells over 1000 cycles. The model can be deployed within a short time for state estimation using physics-based models without requiring prior knowledge of the battery chemistry, format, or capacity.

25 ENERGY STORAGE↗

Simulated Space Environment Effects on the Blocking Force of Silicone Adhesive

The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (<0.1 ev) for comparison to the LMSS tests. Diode tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force.

Boeder, Paul↗

Two-Dimensional Analysis of Conical Pulsed Inductive Plasma Thruster Performance

A model of the maximum achievable exhaust velocity of a conical theta pinch pulsed inductive thruster is presented. A semi-empirical formula relating coil inductance to both axial and radial current sheet location is developed and incorporated into a circuit model coupled to a momentum equation to evaluate the effect of coil geometry on the axial directed kinetic energy of the exhaust. Inductance measurements as a function of the axial and radial displacement of simulated current sheets from four coils of different geometries are t to a two-dimensional expression to allow the calculation of the Lorentz force at any relevant averaged current sheet location. This relation for two-dimensional inductance, along with an estimate of the maximum possible change in gas-dynamic pressure as the current sheet accelerates into downstream propellant, enables the expansion of a one-dimensional circuit model to two dimensions. The results of this two-dimensional model indicate that radial current sheet motion acts to rapidly decouple the current sheet from the driving coil, leading to losses in axial kinetic energy 10-50 times larger than estimations of the maximum available energy in the compressed propellant. The decreased available energy in the compressed propellant as compared to that of other inductive plasma propulsion concepts suggests that a recovery in the directed axial kinetic energy of the exhaust is unlikely, and that radial compression of the current sheet leads to a loss in exhaust velocity for the operating conditions considered here.

Hallock, A. K.↗

Preparations for quantum simulations of quantum chromodynamics in 1+1 dimensions. I. Axial gauge

Here, tools necessary for quantum simulations of 1+1 dimensional quantum chromodynamics are developed. When formulated in axial gauge and with two flavors of quarks, this system requires 12 qubits per spatial site with the gauge fields included via nonlocal interactions. Classical computations and D-wave’s quantum annealer advantage are used to determine the hadronic spectrum, enabling a decomposition of the masses and a study of quark entanglement. Color “edge” states confined within a screening length of the end of the lattice are found. IBM’s seven-qubit quantum computers, ibmq_jakarta and ibm_perth, are used to compute dynamics from the trivial vacuum in one-flavor QCD with one spatial site. More generally, the Hamiltonian and quantum circuits for time evolution of 1+1 dimensional SU(N c ) gauge theory with Nf flavors of quarks are developed, and the resource requirements for large-scale quantum simulations are estimated.

1+1 dimensions↗