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At least 1,459 records · Page 81

Quantitative Fermi level tuning in amorphous organic semiconductor by molecular doping: Toward full understanding of the doping mechanism

The doping mechanism in organic-semiconductor films has been quantitatively studied via ultrahigh-sensitivity ultraviolet photoelectron spectroscopy of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD) films doped with hexaazatriphenylene-hexacarbonitrile [HAT(CN){sub 6}]. We observed that HOMO of α-NPD shifts to the Fermi level (E{sub F}) in two different rates with the doping concentration of HAT(CN){sub 6}, but HOMO distributions of both pristine and doped amorphous α-NPD films are excellently approximated with a same Gaussian distribution without exponential tail states over ∼5 × 10{sup 18} cm{sup −3} eV{sup −1}. From the theoretical simulation of the HAT(CN){sub 6}-concentration dependence of the HOMO in doped films, we show that the passivation of Gaussian-distributed hole traps, which peak at 1.1 eV above the HOMO onset, occurs at ultralow doping [HAT(CN){sub 6} molecular ratio (MR) < 0.01], leading to a strong HOMO shift of ∼0.40 eV towards E{sub F}, and MR dependence of HOMO changes abruptly at MR ∼ 0.01 to a weaker dependence for MR > 0.01 due to future of the dopant acceptor level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Experimental and molecular dynamics simulation study of structure of liquid and amorphous Ni 62 Nb 38 alloy

The state-of-the-art experimental and atomistic simulation techniques were utilized to study the structure of the liquid and amorphous Ni 62 Nb 38 alloy. First, the ab initio molecular dynamics (AIMD) simulation was performed at rather high temperature where the time limitations of the AIMD do not prevent to reach the equilibrium liquid structure. A semi-empirical potential of the Finnis-Sinclair (FS) type was developed to almost exactly reproduce the AIMD partial pair correlation functions (PPCFs) in a classical molecular dynamics simulation. This simulation also showed that the FS potential well reproduces the bond angle distributions. The FS potential was then employed to elongate the AIMD PPCFs and determine the total structure factor (TSF) which was found to be in excellent agreement with X-ray TSF obtained within the present study demonstrating the reliability of the AIMD for the simulation of the structure of the liquid Ni–Nb alloys as well as the reliability of the developed FS potential. The glass structure obtained with the developed potential was also found to be in excellent agreement with the X-ray data. We report the analysis of the structure revealed that a network of the icosahedra clusters centered on Ni atoms is forming during cooling the liquid alloy down to T g and the Nb Z14, Z15, and Z16 clusters are attached to this network. This network is the main feature of the Ni 62 Nb 38 alloy and further investigations of the properties of this alloy should be based on study of the behavior of this network.

36 MATERIALS SCIENCE↗

Communication: Proton exchange in low temperature co-mixed amorphous H 2 O and D 2 O films: The effect of the underlying Pt(111) and graphene substrates

Isotopic exchange reactions in mixed D 2 O and H 2 O amorphous solid water films were investigated using reflection absorption infrared spectroscopy. Nanoscale films composed of 5% D 2 O in H 2 O were deposited on Pt(111) and graphene covered Pt(111) substrates using simultaneous co-dosing using two molecular beams. At 130 K, we discover that the reaction is strongly dependent on the substrate with the H/D exchange occurring more rapidly on the Pt(111) surface than on graphene. At 140 K, the films eventually crystallize with the final products on the two substrates being primarily HOD on Pt(111) and a mixture of HOD and unreacted D 2 O on graphene. We demonstrate by pre-dosing H 2 and O 2 on Pt(111) that the observed differences in reactivity on the two substrates are likely due to the formation of hydrogen ions at the Pt(111) surface that are not formed on graphene. Once formed the mobile protons move through the ASW overlayer to begin the H/D exchange reaction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Investigations of irradiation effects in crystalline and amorphous SiC

The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au 3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.

3C-SiC↗

Magnetic and transport properties of amorphous, B 2 and L 2 1 Co 2 MnGa thin films

We have studied the magnetic and transport properties of Co 2 MnGa (CMG) thin films grown on MgO(100) substrates in terms of their chemical evolution from amorphous to ordered L 2 1 phases at the substrate temperature T s during the thin film deposition. Interestingly, the chemical order and magnetic properties sharply change depending on T s . The CMG film deposited at T s = 550 °C exhibits the L 2 1 -ordered structure and the magnetization of 3.5 μ B /f.u., while the CMG film deposited at T s = 300 °C shows a B 2-ordered structure and a relatively lower magnetization of 3 μ B /f.u., possibly due to the Mn–Mn antiferromagnetic interactions. A metallic behavior of the electrical resistivity appeared in the CMG film deposited at T s = 550 °C, whereas the semiconducting behavior appeared in the CMG films deposited at 300 °C and room temperature. Moreover, we found that the absolute value of α = d(Δ ρ )/d( T 1/2 ) in the low-temperature range below about 20 K is a measure to evaluate the degree of the chemical disorder. In a Hall effect measurement, the L 2 1 -ordered CMG film obtained at T s = 550 °C shows a sizable anomalous Hall resistivity of 15 µ Ω cm. This study unveils the relation between T s and atomic ordering, providing a new pathway for optimizing the chemical order.

36 MATERIALS SCIENCE↗

Learning-based approach to plasticity in athermal sheared amorphous packings: Improving softness

The plasticity of amorphous solids undergoing shear is characterized by quasi-localized rearrangements of particles. While many models of plasticity exist, the precise relationship between the plastic dynamics and the structure of a particle’s local environment remains an open question. Previously, machine learning was used to identify a structural predictor of rearrangements called “softness.” Although softness has been shown to predict which particles will rearrange with high accuracy, the method can be difficult to implement in experiments where data are limited and the combinations of descriptors it identifies are often difficult to interpret physically. Here, we address both of these weaknesses, presenting two major improvements to the standard softness method. First, we present a natural representation of each particle’s observed mobility, allowing for the use of statistical models that are both simpler and provide greater accuracy in limited datasets. Second, we employ persistent homology as a systematic means of identifying simple, topologically informed, structural quantities that are easy to interpret and measure experimentally. We test our methods on two-dimensional athermal packings of soft spheres under quasi-static shear. We find that the same structural information that predicts small variations in the response is also predictive of where plastic events will localize. We also find that an excellent accuracy is achieved in athermal sheared packings using simply a particle’s species and the number of nearest neighbor contacts.

36 MATERIALS SCIENCE↗

Simulations of the IR and Raman spectra of water confined in amorphous silica slit pores

Water in nano-scale confining environments is a key element in many biological, material, and geological systems. The structure and dynamics of the liquid can be dramatically modified under these conditions. Probing these changes can be challenging, but vibrational spectroscopy has emerged as a powerful tool for investigating their behavior. A critical, evolving component of this approach is a detailed understanding of the connection between spectroscopic features and molecular-level details. In this paper, this issue is addressed by using molecular dynamics simulations to simulate the linear infrared (IR) and Raman spectra for isotopically dilute HOD in D 2 O confined in hydroxylated amorphous silica slit pores. The effect of slit-pore width and hydroxyl density on the silica surface on the vibrational spectra is also investigated. The primary effect of confinement is a blueshift in the frequency of OH groups donating a hydrogen bond to the silica surface. This appears as a slight shift in the total (measurable) spectra but is clearly seen in the distance-based IR and Raman spectra. Analysis indicates that these changes upon confinement are associated with the weaker hydrogen-bond accepting properties of silica oxygens compared to water molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films

Qubits made from superconducting materials are a mature platform for quantum information science application, such as quantum computing. However, material-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate material-based decoherence channels. Here, we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer is consistent with an Nb 2 O 5 stoichiometry. Comparing x-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors and shows that soft x-ray absorption can fingerprint magnetic impurities in these superconducting systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coexistence of soft and hard magnetic phases in single layer amorphous Tb–Co thin films

Amorphous, ferrimagnetic Tb-Co thin films prepared with a thin Ta underlayer and either a Ta or a Pt overlayer show evidence of both soft and hard magnetic phases. At room temperature, the films exhibit conventional ferromagnetism, but low temperature magnetometry measurements reveal the decoupling of the two magnetic phases with decreasing temperature due to increased anisotropy energy of the hard layer at lower temperatures. Decreasing the film thickness to 2 nm, slightly above the superparamagnetic limit found at 1 nm, a soft, low-density phase was isolated and found to be present in all the films as confirmed with x-ray reflectivity and Rutherford backscattering spectrometry measurements. For greater thicknesses, the bottom layer retains its soft magnetic nature, while the remainder of the film is denser and has strong perpendicular magnetic anisotropy, leading to the exchange-spring behavior when the anisotropy becomes large, either at low temperatures or via a Pt overlayer that adds a strong interfacial anisotropy to the layer. Micromagnetic simulations of a soft/hard bilayer model with the experimentally determined anisotropy and magnetization parameters into a soft/hard bilayer model reproduced the experimental hysteretic behavior very well. These findings demonstrate how the magnetic state and the response of a-Tb-Co films to external fields can be controlled, providing a high degree of tunability that is promising for high-performance nanoscale devices.

36 MATERIALS SCIENCE↗

Magnetic properties versus interface density in rigid-exchange-coupled amorphous multilayers with induced uniaxial anisotropy

We demonstrate the possibility to tune the saturation magnetization, coercivity, and uniaxial in-plane anisotropy constant in amorphous bilayers and multilayers of Co 85 (Al 70 Zr 30 ) 15 and Sm 11 Co 82 Ti 7 through the interface density. From magnetometry and x-ray circular dichroism (XMCD) measurements, we conclude that the easy-axis coercivity μ 0 H c increases four times when the number of bilayer repetitions, N, increases from 1 to 10 within a constant total sample thickness of 20 nm. At the same time, the anisotropy constant K u also increases by a factor four, whereas the saturation magnetization M s decreases slightly. The Co spin and orbital moments, m s and m l , are found to be approximately constant within the sample series. The average total Co moment is only 0.8-0.9 μ B /atom, but the m l /m s ratio is strongly enhanced compared to pure Co. Magnetization curves extracted from XMCD measurements show that the Co and Sm moments are ferromagnetically coupled for all samples.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

New developments in structure-property and amorphous materials research at the upgraded 16-BM-B Paris-Edinburgh press station at HPCAT

Beamline 16-BM-B of the High-Pressure Collaborative Access Team (HPCAT) at the Advanced Photon Source (APS) provides a Paris-Edinburgh press program to probe the structure and properties of crystalline and amorphous materials up to 12 GPa at room temperature or 7 GPa at 2000°C. During the recent APS upgrade, 16-BM-B undertook major improvements to its instrumentation and measurement techniques. The upgrade includes the addition of a 1.2 m horizontal “condenser” mirror and a new variable-sized collimation system, the combination of which decreases the acquisition time for energy dispersive X-ray diffraction measurements by a factor of 10 when compared to pre-upgrade measurements. The addition of a new Ge energy-sensitive detector and DANTE (XGLab) digital pulse processor allows for processing the increased diffraction counts with minimal deadtime. In addition to upgraded beamline components, new techniques are being developed for eventual release to the user community, including electrical resistivity and tomography measurements.

APS upgrade↗

THE MECHANISM OF SURFACE DIFFUSION OF H AND D ATOMS ON AMORPHOUS SOLID WATER: EXISTENCE OF VARIOUS POTENTIAL SITES

To understand elementary processes leading to H{sub 2} formation, and the hydrogenation and deuteration reactions of adsorbed species on dust grains in dense clouds, we experimentally investigated the diffusion of atomic hydrogen and deuterium on amorphous solid water (ASW) at temperatures of 8-15 K. The present study extended our previous study for selective detections of H and D atoms, and of H{sub 2} (J = 0 and 1) and D{sub 2} (J = 0 and 1) molecules adsorbed on ASW using both photo-stimulated desorption and resonance-enhanced multiphoton ionization, to investigate potential sites on ASW for diffusion, recombination dynamics, and the diffusion mechanism of H and D atoms. Our results demonstrate that the ASW surface contains various potential sites that can be categorized into at least three groups: very shallow, middle-, and deep-potential sites, with diffusion activation energies of {<=}18, 22 (23 meV for D atoms), and {>=}30 meV, respectively. The present study pictured the outline of H{sub 2} formation on cosmic ice dust at low temperatures: H atoms landing on the dust will diffuse rapidly at the abundant shallow and middle sites on ASW, and finally become trapped at deep sites. The H atoms that arrive next recombine with such trapped H atoms to yield H{sub 2} molecules. The small isotopic difference between the diffusion of H and D atoms on ASW indicates that the diffusion mechanism can be explained by thermal hopping, at least at middle-potential sites.

74 ATOMIC AND MOLECULAR PHYSICS↗

CYANATE ION IN COMPACT AMORPHOUS WATER ICE

The 4.62 {mu}m infrared (2164.5 cm{sup -1}) absorption band, observed in ice mantels toward many young stellar objects, has been mostly attributed to the {nu}{sub 3} (CN stretch) band of OCN{sup -} ions. We present in this work a spectroscopic study of OCN{sup -} ions embedded in compact amorphous ice in a range of concentrations and temperatures relevant to astronomical observations together with quantum mechanical calculations of the {nu}{sub 3} band of OCN{sup -} in various H{sub 2}O environments. The ice samples containing the ions are prepared through hyperquenching of liquid droplets of K{sup +}OCN{sup -} solutions on a substrate at 14 K. The {nu}{sub 3} OCN{sup -} band appears as a broad feature peaking at 4.64 {mu}m with a secondary maximum at 4.54 {mu}m and is much weaker than the corresponding peak in the liquid solution or in the solid salt. A similar weakening is observed for other OCN{sup -} absorption peaks at 7.66 {mu}m (2{nu}{sub 2}) and 8.20 {mu}m ({nu}{sub 1}). The theoretical calculations for the {nu}{sub 3} vibration lead to a range of frequencies spanning the experimentally observed width. This frequency spread could help explain the pronounced drop in the band intensity in the ice. The OCN{sup -} {nu}{sub 3} band in the present compact ices is also broader and much weaker than that reported in the literature for OCN{sup -} ions obtained by variously processing porous ice samples containing suitable neutral precursors. The results of this study indicate that the astronomical detection of OCN{sup -} in ice mantels could be significantly impaired if the ion is embedded in a compact water network.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The sticking of atomic hydrogen on amorphous water ice

Using classical molecular dynamics, we have simulated the sticking and scattering process of a hydrogen atom on an amorphous ice film to predict the sticking probability of hydrogen on ice surfaces. A wide range of initial kinetic energies of the incident hydrogen atom (10 K-600 K) and two different ice temperatures (10 K and 70 K) were used to investigate this fundamental process in interstellar chemistry. We report here the sticking probability of atomic hydrogen as a function of incident kinetic energy, gas temperature, and substrate temperature, which can be used in astrophysical models. The current results are compared to previous theoretical and experimental studies that have reported a wide range in the sticking coefficient.

79 ASTRONOMY AND ASTROPHYSICS↗

CO DIFFUSION INTO AMORPHOUS H{sub 2}O ICES

The mobility of atoms, molecules, and radicals in icy grain mantles regulates ice restructuring, desorption, and chemistry in astrophysical environments. Interstellar ices are dominated by H{sub 2}O, and diffusion on external and internal (pore) surfaces of H{sub 2}O-rich ices is therefore a key process to constrain. This study aims to quantify the diffusion kinetics and barrier of the abundant ice constituent CO into H{sub 2}O-dominated ices at low temperatures (15–23 K), by measuring the mixing rate of initially layered H{sub 2}O(:CO{sub 2})/CO ices. The mixed fraction of CO as a function of time is determined by monitoring the shape of the infrared CO stretching band. Mixing is observed at all investigated temperatures on minute timescales and can be ascribed to CO diffusion in H{sub 2}O ice pores. The diffusion coefficient and final mixed fraction depend on ice temperature, porosity, thickness, and composition. The experiments are analyzed by applying Fick’s diffusion equation under the assumption that mixing is due to CO diffusion into an immobile H{sub 2}O ice. The extracted energy barrier for CO diffusion into amorphous H{sub 2}O ice is ∼160 K. This is effectively a surface diffusion barrier. The derived barrier is low compared to current surface diffusion barriers in use in astrochemical models. Its adoption may significantly change the expected timescales for different ice processes in interstellar environments.

74 ATOMIC AND MOLECULAR PHYSICS↗

Early crystallization of amorphous selenium under high pressure studied by synchrotron XRD method

Abstract The amorphous selenium (a-Se) was studied via x-ray diffraction (XRD) under pressures ranging from ambient pressure up to 30 GPa at room temperature to study its high-pressure behavior. Two compressional experiments on a-Se samples, with and without heat treatment, respectively, were conducted. Contrary to the previous reports that a-Se crystallized abruptly at around 12 GPa, in this work we report an early partially crystallized state at 4.9 GPa before completing the crystallization at around 9.5 GPa based on in-situ high pressure XRD measurements on the a-Se with 70 °C heat treatment. In comparison, crystallization pressure on another a-Se sample without thermal treatment history was observed to be 12.7 GPa, consistent with the previously reported crystallization pressure. Thus, it is proposed in this work that prior heat treatment of a-Se can result in an earlier crystallization under high pressure, which helps to understand the possible mechanism caused by the previous controversial reports on pressure induced crystallization behavior in a-Se.

Physics↗

Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

2D materials↗

Measurement of the ionization response of amorphous selenium with 122 keV γ rays

In this work, we performed a measurement of the ionization response of 200 μm-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/μm. The aSe target was exposed to ionizing radiation from a 57 Co radioactive source and the ionization pulses were recorded with high resolution. Using the spectral line from the photoabsorption of 122 keV γ rays, we measured the charge yield in aSe and the line width as a function of drift electric field. From a detailed microphysics simulation of charge generation and recombination in aSe, we conclude that the strong dependence of recombination on the ionization track density provides the dominant contribution to the energy resolution in aSe. These results provide valuable input to estimate the sensitivity of a proposed next-generation search for the neutrinoless ββ decay of 82 Se that aims to employ imaging sensors with an active layer of aSe. We estimate the RMS line width of the integrated ionization signal from neutrinoless ββ decay events (of deposited energy 3 MeV) to be 2.0% for a drift field of 50 V/μm. The energy resolution can be improved to 1% by correcting for the charge yield as a function of ionization density along the imaged electron tracks.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗