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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θ{sub p}. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θ{sub p}. The maximum value of the cross-correlation coefficient achieved is −0.99 with a zero time delay over a wide range of θ{sub p} beyond 65° with a poor synchronization dynamic at θ{sub p} less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θ{sub p}. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten “W”-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

Möller, C.↗
DOE OSTI2016

Strongly coupled fluid-particle flows in vertical channels. I. Reynolds-averaged two-phase turbulence statistics

Simulations of strongly coupled (i.e., high-mass-loading) fluid-particle flows in vertical channels are performed with the purpose of understanding the fundamental physics of wall-bounded multiphase turbulence. The exact Reynolds-averaged (RA) equations for high-mass-loading suspensions are presented, and the unclosed terms that are retained in the context of fully developed channel flow are evaluated in an Eulerian–Lagrangian (EL) framework for the first time. A key distinction between the RA formulation presented in the current work and previous derivations of multiphase turbulence models is the partitioning of the particle velocity fluctuations into spatially correlated and uncorrelated components, used to define the components of the particle-phase turbulent kinetic energy (TKE) and granular temperature, respectively. The adaptive spatial filtering technique developed in our previous work for homogeneous flows [J. Capecelatro, O. Desjardins, and R. O. Fox, “Numerical study of collisional particle dynamics in cluster-induced turbulence,” J. Fluid Mech. 747, R2 (2014)] is shown to accurately partition the particle velocity fluctuations at all distances from the wall. Strong segregation in the components of granular energy is observed, with the largest values of particle-phase TKE associated with clusters falling near the channel wall, while maximum granular temperature is observed at the center of the channel. The anisotropy of the Reynolds stresses both near the wall and far away is found to be a crucial component for understanding the distribution of the particle-phase volume fraction. In Part II of this paper, results from the EL simulations are used to validate a multiphase Reynolds-stress turbulence model that correctly predicts the wall-normal distribution of the two-phase turbulence statistics.

42 ENGINEERING↗
DOE OSTI2016

Linear and nonlinear instability in vertical counter-current laminar gas-liquid flows

We consider the genesis and dynamics of interfacial instability in vertical gas-liquid flows, using as a model the two-dimensional channel flow of a thin falling film sheared by counter-current gas. The methodology is linear stability theory (Orr-Sommerfeld analysis) together with direct numerical simulation of the two-phase flow in the case of nonlinear disturbances. We investigate the influence of two main flow parameters on the interfacial dynamics, namely the film thickness and pressure drop applied to drive the gas stream. To make contact with existing studies in the literature, the effect of various density contrasts is also examined. Energy budget analyses based on the Orr-Sommerfeld theory reveal various coexisting unstable modes (interfacial, shear, internal) in the case of high density contrasts, which results in mode coalescence and mode competition, but only one dynamically relevant unstable interfacial mode for low density contrast. A study of absolute and convective instability for low density contrast shows that the system is absolutely unstable for all but two narrow regions of the investigated parameter space. Direct numerical simulations of the same system (low density contrast) show that linear theory holds up remarkably well upon the onset of large-amplitude waves as well as the existence of weakly nonlinear waves. For high density contrasts, corresponding more closely to an air-water-type system, linear stability theory is also successful at determining the most-dominant features in the interfacial wave dynamics at early-to-intermediate times. Nevertheless, the short waves selected by the linear theory undergo secondary instability and the wave train is no longer regular but rather exhibits chaotic motion. The same linear stability theory predicts when the direction of travel of the waves changes — from downwards to upwards. We outline the practical implications of this change in terms of loading and flooding. The change in direction of the wave propagation is represented graphically in terms of a flow map based on the liquid and gas flow rates and the prediction carries over to the nonlinear regime with only a small deviation.

42 ENGINEERING↗
DOE OSTI2016

Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique

In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline nanorods are hexagonal. The diameter and length of the as grown undoped ZnO nanorods varies in the range of 80-150 nm and 1.0 - 1.4 μm, respectively. Along with the lattice parameters of the hexagonal crystal structure, the diameter and length of Mn doped ZnO nanorods are found to increase slightly as compared to the undoped ZnO nanorods. The X-ray photoelectron spectroscopy confirms the presence of Mn atoms in Mn{sup 2+} state in the single crystalline ZnO nanorods. The recorded photoluminescence spectrum contains two emissions peaks having UV exciton emissions along with a green-yellow emission. The green-yellow emissions provide the evidence of singly ionized oxygen vacancies. The magnetic field dependent magnetization measurements [M (H)] and zero field cooled (ZFC) and field cooled (FC) magnetization [M(T)] measurements have been carried out at different isothermal conditions in the temperature range of 5-300 K. The Mn doped ZnO nanorods clearly show room temperature ferromagnetic ordering near room temperature down to 5 K. The observed magnetization may be attributed to the long range ferromagnetic interaction between bound magnetic polarons led by singly charged oxygen vacancies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Oblique patterned etching of vertical silicon sidewalls

A method for patterning on vertical silicon surfaces in high aspect ratio silicontopography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Translation effects on vertical Bridgman growth and optical, mechanical and surface analysis of 2-phenylphenol single crystal

2-phenylphenol optical crystals were grown in cone ampoules using vertical Bridgman technique. Single crystal of 2-phenylphenol with 150 mm length has been grown. The inclination on the conical part of the ampoule reduces the growth defects in the 2-phenylphenol single crystal. The lattice parameters and structure studied using single crystal X-ray diffraction method. 2-phenylphenol single crystal belongs to orthorhombic space group Fdd2. The micro translation rate affects crystal growth of 2-phenylphenol crystal was studied. The translation rate dependent defects present in the crystal were investigated by transmittance, indentation and etching characterizations. The dislocation induced indentation crack lengths variations were studied. Etch pits and striations observed for the selective etchants furnish significant information on growth aspects and degree of defect present in the crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Inkjet-printed vertically emitting solid-state organic lasers

In this paper, we show that Inkjet Printing can be successfully applied to external-cavity vertically emitting thin-film organic lasers and can be used to generate a diffraction-limited output beam with an output energy as high as 33.6 μJ with a slope efficiency S of 34%. Laser emission shows to be continuously tunable from 570 to 670 nm using an intracavity polymer-based Fabry-Perot etalon. High-optical quality films with several μm thicknesses are realized, thanks to ink-jet printing. We introduce a new optical material where EMD6415 commercial ink constitutes the optical host matrix and exhibits a refractive index of 1.5 and an absorption coefficient of 0.66 cm{sup −1} at 550–680 nm. Standard laser dyes like Pyrromethene 597 and Rhodamine 640 are incorporated in solution to the EMD6415 ink. Such large size “printed pixels” of 50 mm{sup 2} present uniform and flat surfaces, with roughness measured as low as 1.5 nm in different locations of a 50 μm × 50 μm AFM scan. Finally, as the gain capsules fabricated by Inkjet printing are simple and do not incorporate any tuning or cavity element, they are simple to make, have a negligible fabrication cost, and can be used as fully disposable items. This work opens the way towards the fabrication of really low-cost tunable visible lasers with an affordable technology that has the potential to be widely disseminated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Exploration of vertical scaling limit in carbon nanotube transistors

Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4.5 nm or thinner) atomic-layer-deposition grown HfO{sub 2} as gate insulator, and shown to exhibit high gate efficiency, i.e., all examined (totally 76) devices present very low room temperature subthreshold swing with an averaged value of 64 mV/Dec, without observable carrier mobility degradation. The gate leakage of the CNT FET under fixed gate voltage is dependent not only on the thickness of HfO{sub 2} insulator, but also on the diameter of the CNT. The vertical scaling limit of CNT FETs is determined by gate leakage standard in ultra large scale integrated circuits. HfO{sub 2} film with effective oxide thickness of 1.2 nm can provide both excellent gate electrostatic controllability and small gate leakage for sub-5 nm FETs based on CNT with small diameter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Lateral excitonic switching in vertically stacked quantum dots

We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixed through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analysis on vertical directional couplers with long range surface plasmons for multilayer optical routing

A structure featuring vertical directional coupling of long-range surface plasmon polaritons between strip waveguides at λ = 1.55 μm is investigated with the aim of producing efficient elements that enable optical multilayer routing for 3D photonics. We have introduced a practical computational method to calculate the interaction on the bent part. This method allows us both to assess the importance of the interaction in the bent part and to control it by a suitable choice of the fabrication parameters that helps also to restrain effects due to fabrication issues. The scheme adopted here allows to reduce the insertion losses compared with other planar and multilayer devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2 ) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c -2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12 , 2 × 10 15 , and 5 × 10 14 cm –3 , respectively. The E c -2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Trench formation and corner rounding in vertical GaN power devices

Trench formation and corner rounding are the key processes to demonstrate high-voltage trench-based vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500 V was obtained in the device with flat-bottom rounded trenches, compared to 350 V in the device with tapered-bottom rounded trenches and 150 V in the device with non-rounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices.

Zhang, Yuhao (ORCID:0000000228495653)↗
DOE OSTI2017

Convective mixing in vertically-layered porous media: The linear regime and the onset of convection

In this paper, we study the effect of permeability heterogeneity on the stability of gravitationally unstable, transient, diffusive boundary layers in porous media. Permeability is taken to vary periodically in the horizontal plane normal to the direction of gravity. In contrast to the situation for vertical permeability variation, the horizontal perturbation structures are multimodal. We therefore use a two-dimensional quasi-steady eigenvalue analysis as well as a complementary initial value problem to investigate the stability behavior in the linear regime, until the onset of convection. We find that thick permeability layers enhance instability compared with thin layers when heterogeneity is increased. On the contrary, for thin layers the instability is weakened progressively with increasing heterogeneity to the extent that the corresponding homogeneous case is more unstable. For high levels of heterogeneity, we find that a small change in the permeability field results in large variations in the onset time of convection, similar to the instability event in the linear regime. However, this trend does not persist unconditionally because of the reorientation of vorticity pairs due to the interaction of evolving perturbation structures with heterogeneity. Consequently, an earlier onset of instability does not necessarily imply an earlier onset of convection. A resonant amplification of instability is observed within the linear regime when the dominant perturbation mode is equal to half the wavenumber of permeability variation. On the other hand, a substantial damping occurs when the perturbation mode is equal to the harmonic and sub-harmonic components of the permeability wavenumber. Finally, the phenomenon of such harmonic interactions influences both the onset of instability as well as the onset of convection.

36 MATERIALS SCIENCE↗