Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “thin oxide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Improving Corrosion Resistance of 316L Austenitic Stainless Steel Using ZrO{sub 2} Sol-Gel Coating in Nitric Acid Solution

In this study, thin-film coating of zirconium oxide (ZrO{sub 2}) was prepared by sol-gel method and subsequent heat treatment process. The sol was prepared by controlled hydrolysis of zirconium tetrapropoxide using acetic acid and ethanol/acetylacetone mixture as catalyst and chelating agent, respectively, and finally deposited onto the 316L austenitic stainless steel (316L SS) using dip coating method in order to improve its corrosion resistance in nitric acid medium. The composition, structure, and morphology of the coated surface were investigated by x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The obtained results from XRD and FTIR state the formation of tetragonal and monoclinic ZrO{sub 2} phase. Also, the obtained results from surface morphology investigation by SEM and AFM indicate the formation of smooth, homogeneous and uniform coatings on the steel substrate. Then, the corrosion behavior of stainless steel was investigated in a 1 and 10 M nitric acid solutions using electrochemical impedance spectroscopy and linear polarization test. The obtained results from these tests for ZrO{sub 2}-coated specimens indicated a considerable improvement in the corrosion resistance of 316L stainless steel by an increase in corrosion potential and transpassive potential, and a decrease in passive current density and corrosion current density. The decrease in passive current density in both the concentration of solutions was two orders of magnitude from bare to coated specimens.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Final Scientific/Technical Report – March 2015

The Center for Interface Science: Solar Electric Materials (CISSEM) was funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (BES) from August 1, 2009 – December 31, 2014 under Award Number DE-SC0001084, as part of a broad set of Energy Frontier Research Centers (EFRCs) designed to underpin the development of economical energy conversion platforms for the 21st century. CISSEM successfully integrated the research groups of 19 principal investigators at The University of Arizona (the lead institution), the Georgia Institute of Technology, Princeton University, the University of Washington, and the National Renewable Energy Laboratory (NREL) into a coordinated and synergistic program, while also building a highly productive collaboration with the SLAC National Accelerator Laboratory. Our mission was to advance the understanding of interface science underlying solar energy conversion technologies based on organic and organic-inorganic hybrid materials – specifically in organic photovoltaic solar cells (OPVs); and to inspire, recruit and train future scientists and leaders in the basic science of solar electric energy conversion. CISSEM researchers focused on establishing a foundational understanding of the electronic properties of interfaces in area-scalable, thin-film photovoltaic platforms. Metal oxide interlayers used in OPVs to improve the efficiency of charge harvesting at electrodes was our central focus. A key feature of CISSEM research has been our ability to develop a comprehensive understanding of interfaces and interfacial processes at the atomic and molecular scales. This is a scientific foundation for thin-film photovoltaic technologies and our nation’s pursuit of lowering the costs of transforming the sun’s energy into electricity. Our efforts combined: i) theoretical modeling; ii) new materials development; iii) developing new measurement science approaches to characterize composition, molecular and supramolecular structure, band edge energies, electrical properties, and charge harvesting or injection; and iv) integrating our use-inspired new materials and enhanced knowledge of interfaces and interfacial processes into OPV platforms. The strengths of the characterization methodologies developed in CISSEM were recognized within the EFRC network, and were a major component of our interactions with other DOE-funded programs including EFRCs. CISSEM research has resulted in a legacy of 120+ peer-reviewed publications describing our basic science. Much of this highly collaborative research will now be built upon at CISSEM member institutions, with other extramural funding sources. Furthermore, the state-of-the-art facilities and expertise created for modern interface science, especially as they pertain to energy conversion and energy storage challenges, will ensure their broadest continued impact. DOE EFRC funding has positively impacted and enhanced the training and development of more than 140 graduate students, postdoctoral researchers and research scientists at the five CISSEM institutions, and students from three Colorado universities associated with NREL. Our legacy also includes these student, postdoctoral researcher and scientist alumni who have taken positions of impact and responsibility in technology industries, government agencies and academia in the U.S., Asia and Europe.

14 SOLAR ENERGY↗
DOE OSTI2018

Liquid-Like, Self-Healing Aluminum Oxide during Deformation at Room Temperature

Effective protection from environmental degradation relies on the integrity of oxide as diffusion barriers. Ideally, the passivation layer can repair its own breaches quickly under deformation. While studies suggest that the native aluminum oxide may manifest such properties, it has yet to be experimentally proven because direct observations of the air-environmental deformation of aluminum oxide and its initial formation at room temperature are challenging. In this letter, we report in situ experiments to stretch pure aluminum nanotips under O 2 gas environments in a transmission electron microscope (TEM). We discovered that aluminum oxide indeed deforms like liquid and can match the deformation of Al without any cracks/spallation at moderate strain rate. At higher strain rate, we exposed fresh metal surface, and visualized the self-healing process of aluminum oxide at atomic resolution. Unlike traditional thin-film growth or nanoglass consolidation processes, we observe seamless coalescence of new oxide islands without forming any glass–glass interface or surface grooves, indicating greatly accelerated glass kinetics at the surface compared to the bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Analysis of colorimetry using the CIE-L*a*b* system and the photocatalytic activity of photochromic films

Highlights: • The films containing fibers were efficient in the degradation of methyl orange dye. • Doping of TiO{sub 2} with W allowed the band gap reduction of TiO{sub 2}. • The photochromism observed in the films was due to the synchronicity between oxides. • The films exhibited variations between colors, and different reflectance levels. - Abstract: This work aims to explain how oxide films are correlated when exposed to UV-A radiation, due to the occurrence of similar phenomena. Thus, thin films of TiO{sub 2} and TiO{sub 2} doped with H{sub 2}WO{sub 4} or Na{sub 2}WO{sub 4}·2H{sub 2}O were made by spin-coating, heat treated between 650 and 800 °C and evaluated for their optical and photocatalytic properties. The X-ray diffraction technique (XRD) was used to determine the crystalline structure of the films. The photochromism was observed through a spectrophotometer using the CIE-Lab colorimetric method. The analysis of the films photocatalytic behavior was obtained following the photodegradation in 125 ml of methyl orange dye (20 ppm). The results showed that the films presented good photochromic and photocatalytic properties due to the synchronization between the chemical and physical properties of TiO{sub 2} and tungsten.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy

The chemistry and intermixing at buried interfaces in sputter deposited ZnO/Ti/ZnO thin layers were studied by hard x-ray photoelectron spectroscopy. The long mean free path of the photoelectrons allowed for detailed studies of the oxidation state, band bending effects, and intrinsic doping of the buried interfaces. Oxidation of the Ti layer was observed when ZnO was deposited on top. When Ti is deposited onto ZnO, Zn Auger peaks acquire a metallic character indicating a strong reduction of ZnO at the interface. Annealing of the stack at 200 °C results in further reduction of ZnO and oxidation of Ti. Above 300 °C, oxygen transport from the bulk of the ZnO layer takes place, leading to re-oxidation of ZnO at the interface and further oxidation of Ti layer. Heating above 500 °C leads to an intermixing of the layers and the formation of a Zn{sub x}TiO{sub y} compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1988

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
NASA NTRS1991

CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
DOE OSTI2017

Determining interface properties limiting open-circuit voltage in heterojunction solar cells

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (V OC ) as a result of the interface is a critical step in evaluating a new material. In this work, we fabricate thin-film PV devices using cuprous oxide (Cu 2 O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensties ( JVTi ). We quantify the loss in V OC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Modeling the Uptake of Hydrogen Chloride onto Interior Spacecraft Materials

Hydrogen chloride (HCl) is a major combustion product from the pyrolysis of polyvinyl chloride (PVC) insulated electrical wires, a common spacecraft fire safety concern. Models at two different scales were developed to predict HCl uptake on anodized, chromate conversion coated (Iridite), and bare aluminum surfaces, as well as on Nomex fabric: a macroscopic one-step global surface reaction model where all the active sites are on the exterior surface, and a pore model where the interior active sites deeper into the oxide layer can also be accessed by HCl. Experiments were performed to calibrate kinetic and diffusion constants in the models. A cast acrylic test cell was used to measure the differences between the inlet and outlet concentration of HCl after inserting a sample rod of the test material. For the materials with a thin (< 200 µm) or no oxide layer, the macroscopic surface reaction model adequately predicts the experimental measurements. For the anodized aluminum with a thicker oxide layer, the pore model provided a better match to experimental results. The results will be discussed with respect to the spacecraft fire safety project (Saffire).

modeling↗
DOE OSTI2021

Effects of Sn substitution in SrRuO 3 epitaxial films

Epitaxial SrRu 1–x Sn x O 3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO 3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu 1–x Sn x O 3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Lead-Free Flexible Perovskite Solar Cells with Interfacial Native Oxide Have >10% Efficiency and Simultaneously Enhanced Stability and Reliability

Here we demonstrate an innovative compositional and interfacial engineering approach to achieve Pb-free flexible perovskite solar cells (f-PSCs) with an unprecedented combination of the highest efficiency reported to date (10.43%), together with enhanced operational stability and mechanical reliability. The key to this approach is alloying of an FASnI3 metal halide perovskite (MHP) thin film with Ge2+ to stabilize the Sn2+ oxidation state in the MHP, together with the use of a NiOx hole-transport layer. We show that this results in the in situ formation of a thin amorphous GeO2 native oxide layer at the NiOx/FASn0.9Ge0.1I3 interface. This layer not only passivates that critical interface but also enhances the interfacial mechanical bonding.

efficiency↗
DOE OSTI2016

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Assessment of AFM - KPFM and SSRM for Measuring and Characterizing Materials Aging Processes

Atomic Force Microscopy (AFM), in conjunction with Peak Force Kelvin Probe Force Microscopy (PF-KPFM) and Peak Force Scanning Spreading Resistance Microscopy (PF-SSRM), was used to assess changes on thin metal films that underwent accelerated aging. The AFM technique provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer-scale spatial resolution of surface chemistry changes. Surface morphology, roughness, contact potential difference, and spreading resistance were monitored to qualitatively identify effects of aging-morphology changes and oxidation of Au, Al, Cu thin film standards as well as diffusion of CuAu and AlAu thin film stacks at 65C under dried nitrogen flow conditions. AFM PF-KPFM and PF-SSRM modes have been exercised, refined and have proven to be viable and necessary early aging detection tools.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unravelling Adsorbate-Metal-Oxide Interactions: Water Vapor Chemistry on the Growth and Sintering of Ni over Reducible CeO2(111) Thin Films

The role of water in the growth and sintering of Ni particles over well-ordered CeOx(111) (1.5 < x < 2) thin films was investigated through scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) studies, considering ceria-supported Ni attracts great attention as a promising catalyst for reactions such as steam reforming of ethanol and water gas shift reaction, in which water vapor is used as a key reactant. In the study, both fully oxidized CeO2 and partially reduced CeO1.75 thin films were prepared to examine the effect of the oxygen vacancies/Ce3+ sites in ceria supports. Our STM results revealed that dosing water before or after Ni deposition over the CeOx(111) surfaces at room temperature influenced the sintering behavior of Ni nanoparticles with further heating. Exposure of water to Ni nanoparticles that were deposited over both CeO2 and CeO1.75 at 300 K causes the formation of flatter particles with significantly reduced height when heating to the same temperatures compared to Ni/ceria with no water adsorbates. The flatter Ni particles were also observed when water was first dosed over CeO2 at 300 K followed by Ni deposition at room temperature and further heating. Over a partially reduced CeO1.75 surface with predosed water at 300 K, there is an extensive decrease in the particle density upon subsequent Ni deposition at room temperature and a significant increase in the height for Ni nanoparticles with further heating to higher temperatures compared to Ni over a pristine CeO1.75 surface. This is due to the filling of oxygen vacancies caused by the dissociation of water. This creates fewer nucleation sites for Ni on ceria, weakening the metal-oxide interaction and causing significant metal sintering. Our experimental findings suggest distinct adsorbate-metal-oxide interactions are key to the tuning of sintering of Ni nanoparticles over the CeOx(111) surface caused by water exposure. Such interactions are essential for the further modification of Ni-based catalysts for improved reactivity and stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Kinetics of the Photocurrent of a UV Sensor Based on Indium–Zinc Oxide Nanowires

An analysis of the experiments on the kinetics of the rise and decay of the current under the influence of extreme ultraviolet radiation on the indium–zinc oxide filament layer obtained by the electrospinning method is given. It is shown that the rate of rise of photocurrent is controlled by the radiation intensity and its decay rate is controlled by the partial pressure of oxygen on the surface of the wires. Owing to a significantly larger area of the active surface, this UV sensor with a layer of nanoscale wires has a shorter response time in comparison with homogeneous film structures in which the oxygen adsorption sites are concentrated.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Implementation of flowsheet change to minimize hydrogen and ammonia generation during chemical processing of high level waste in the Defense Waste Processing Facility

Testing was completed to develop a chemical processing flowsheet for the Defense Waste Processing Facility (DWPF), designed to vitrify and stabilize high level radioactive waste. DWPF processing uses a reducing acid (formic acid) and an oxidizing acid (nitric acid) to rheologically thin the slurry and complete the necessary acid base and reduction reactions (primarily mercury and manganese). Formic acid reduces mercuric oxide to elemental mercury, allowing the mercury to be removed during the boiling phase of processing through steam stripping. In runs with active catalysts, formic acid can decompose to hydrogen and nitrate can be reduced to ammonia, both flammable gases, due to rhodium and ruthenium catalysis. Replacement of formic acid with glycolic acid eliminates the generation of rhodium- and ruthenium-catalyzed hydrogen and ammonia. In addition, mercury reduction is still effective with glycolic acid. Hydrogen, ammonia and mercury are discussed in the body of the report. Ten abbreviated tests were completed to develop the operating window for implementation of the flowsheet and determine the impact of changes in acid stoichiometry and the blend of nitric and glycolic acid as it impacts various processing variables over a wide processing region. Three full-length 4-L lab-scale simulations demonstrated the viability of the flowsheet under planned operating conditions. The flowsheet is planned for implementation in early 2017.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2016

Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

36 MATERIALS SCIENCE↗