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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Organic Solvent Free Process to Fabricate High Performance Silicon/Graphite Composite Anode

Cycling stability is a key challenge for application of silicon (Si)-based composite anodes as the severe volume fluctuation of Si readily leads to fast capacity fading. The binder is a crucial component of the composite electrodes. Although only occupying a small amount of the total composite mass, the binder has major impact on the long-term electrochemical performance of Si-based anodes. In recent years, water-based binders including styrene-butadiene rubber (SBR) and carboxymethyl cellulose (CMC) have attracted wide research interest as eco-friendly and low-cost alternatives for the conventional poly(vinylidene difluoride) (PVDF) binder in Si anodes. In this study, Si-based composite anodes are fabricated by simple solid mixing of the active materials with subsequent addition of SBR and CMC binders. This approach bypasses the use of toxic and expansive organic solvents. The factors of binder, silicon, and graphite materials have been systematically investigated. It is found that the retained capacities of the anodes are more than 440 mAh/g after 400 cycles. These results indicate that organic solvent free process is a facile strategy for producing high performance silicon/graphite composite anodes.

Fang, Chen (ORCID:0000000321011991)↗
DOE OSTI2016

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1988

Optimization of Processing of Si3N4

Process changes iterated under guidance of x-radiography. In recent work at NASA Lewis Research Center, density gradients in sintered silicon nitride, characterized by x-radiography, identified and appeared strongly dependent upon powder-processing and sintering conditions. NASA technical memorandum describes systematic investigation, based upon preliminary work, of density-gradient/flexural-strength relationships as affected by processing.

Sanders, William A.↗
DOE OSTI2018

Processing Parameter Control of Lifetime-Limiting Failure Mechanisms in Al-Si Cast Alloys at Room and Elevated Temperatures

Aluminum-silicon cast alloys widely used throughout the transportation sector, A356, 319, and A390, have been studied with respect to chemical compositions and processing parameters that control the resultant mechanical behavior. First, the development of strengthening mechanisms is discussed in terms of the role that alloying elements, solidification behavior, and thermal treatments play. Based on this understanding, an extensive matrix of material conditions was developed and characterized in order to provide practical guidelines for alloy development. In order to provide an understanding of lifetime-limiting failure mechanisms, fatigue crack growth and hot compressive dwell behaviors were further investigated. Fatigue crack growth tests were conducted for all alloys at R = 0.1 and room temperature, and creep–fatigue of 319 was studied at R = − 1.5 and 250 °C. The role of processing parameters in controlling the mechanical properties is identified and discussed, and recommendations for optimized design are made.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Wide-Gap Perovskite via Synergetic Surface Passivation and Its Application toward Efficient Stacked Tandem Photovoltaics

Superior bandgap tunability enables solution-processed halide perovskite a promising candidate for multi-junction photovoltaics (PVs). Particularly, optically coupling wide-gap perovskite by stacking with commercially available PVs such as silicon and CIGS (also known as 4-terminal tandem) simplifies the technology transfer process, and further advances the commercialization potential of perovskite technology. However, compared with matured PV materials and the phase-pure FAPbI 3 , wide-gap perovskite still suffers from huge voltage deficits. Here, the authors take advantage of the synergetic effect behind a sequential fluoride and organic ammonium salt surface passivation strategy to control non-radiative energy losses, and obtained a 17.7% efficiency in infrared-transparent wide-gap perovskite solar cells (21.1% for opaque device), and achieved efficiencies of over 25% when stacked with commercial Si and CIGS products with original PCEs of 18–20% under a 4-terminal working condition.

36 MATERIALS SCIENCE↗
DOE OSTI2015

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1982

Removing Defects From Silicon Ribbon

Proposal for removing impurities from silicon ribbon and sheet could be developed into an automated production-line process. New technique which combines ion-cluster bombardment, electron-gun heating, and plasma etching, could be key step in fabricating inexpensive solar-cell arrays. Silicon sheets and ribbons treated this way could have enhanced carrier lifetimes necessary for satisfactory solar-cell performance.

Shimada, K.↗
DOE OSTI2018

Engineering Spin-Orbit Interaction in Silicon

There has been much interest in leveraging the topological order of materials for quantum information processing. Among the various solid-state systems, one-dimensional topological superconductors made out of strongly spin-orbit-coupled nanowires have been shown to be the most promising material platform. In this project, we investigated the feasibility of turning silicon, which is a non-topological semiconductor and has weak spin-orbit coupling, into a one-dimensional topological superconductor. Our theoretical analysis showed that it is indeed possible to create a sizable effective spin-orbit gap in the energy spectrum of a ballistic one-dimensional electron channel in silicon with the help of nano-magnet arrays. Experimentally, we developed magnetic materials needed for fabricating such nano-magnets, characterized the magnetic behavior at low temperatures, and successfully demonstrated the required magnetization configuration for opening the spin-orbit gap. Our results pave the way toward a practical topological quantum computing platform using silicon, one of the most technologically mature electronic materials.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Development of metallization process. FSA project, cell and module formation research area

New pastes were evaluated that contained additives to aid in the silicon-to-metallization contact. None were completely successful. A reevaluation of the molybdenum oxide paste and the two-step screen printing process was done. The oxide paste did not show promise. The two-step process enabled soldering of the cells but the cells still had a high series resistance. Pastes are on order from a different manufacturer.

Garcia, A., III↗
DOE OSTI2016

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Scalable synthesis of nanoporous silicon microparticles for highly cyclable lithium-ion batteries

Nanoporous silicon is a promising anode material for high energy density batteries due to its high cycling stability and high tap density compared to other nanostructured anode materials. However, the high cost of synthesis and low yield of nanoporous silicon limit its practical application. Here, we develop a scalable, low-cost top-down process of controlled oxidation of Mg 2 Si in the air, followed by HCl removal of MgO to generate nanoporous silicon without the use of HF. By controlling the synthesis conditions, the oxygen content, grain size and yield of the porous silicon are simultaneously optimized from commercial standpoints. In situ environmental transmission electron microscopy reveals the reaction mechanism; the Mg 2 Si microparticle reacts with O 2 to form MgO and Si, while preventing SiO 2 formation. Owing to the low oxygen content and microscale secondary structure, the nanoporous silicon delivers a higher initial reversible capacity and initial Coulombic efficiency compared to commercial Si nanoparticles (3,033 mAh/g vs. 2,418 mAh/g, 84.3% vs. 73.1%). Synthesis is highly scalable, and a yield of 90.4% is achieved for the porous Si nanostructure with the capability to make an excess of 10 g per batch. Our synthetic nanoporous silicon is promising for practical applications in next generation lithium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Transient Microstructure Evolutions and Local Properties of Dual-Phase 980 MPa Grade Steel Via Friction Stir Spot Processing

Friction stir processing is a novel solid-state process to modify microstructures and their properties by intense, localized plastic deformation. However, little research has been reported for microstructure evolutions of advanced high-strength steels during the process. The present work focuses on the study of transient microstructure changes and local mechanical properties for friction stir spot processed dual-phase (DP) 980 MPa grade steel (DP980) under different peak temperatures. A pinless silicon nitride ceramic tool was used to produce relatively simple material deformation and flow near the tool. Friction stir spot processed steel samples were characterized by optical and electron microscopies. Furthermore, Vickers microhardness and nano-indentation measurements were used to study local mechanical properties for correlation with microstructures. A swallow layer of refined grains (<0.6 µm) was obtained with a low peak temperature (under 400 °C), whereas higher peak temperatures (>Ac 1 ) led to a change in grain size with different microstructures (fine-grained DP or martensite). Electron back-scattered diffraction characterizations revealed a large deformation in the as-received microstructures (mixture of ferrite and tempered martensite) induced by friction stir spot processing, leading to recrystallization and grain refinement around the stirred zone. Also, nano-indentation measurements showed a higher hardness than the hardness of the as-received DP980. Friction stir processing with different process conditions effectively changed microstructures and local mechanical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

PbI 2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd) 2 and HI

Atomic layer deposition (ALD) allows for fine control over the thickness, stoichiometry, and structural defects of materials. ALD provides a suitable route to deposit lead halides, which can further be converted to perovskites for photovoltaics, photoemission, and photodetection, among other applications. Deposition of lead halides by ALD has already begun to be explored; however, the precursors used in published processes are highly hazardous, require expensive fabrication processes, or contain impurities that can jeopardize the optoelectronic properties of metal halide perovskites after conversion. In this work, we deposited lead iodide (PbI 2 ) by a facile ALD process involving only two readily accessible and low-cost precursors. PbI 2 nanocrystals were grown on soda-lime glass (SLG), silicon dioxide support grids, and silicon wafer substrates and provided the groundwork for further investigation into developing lead halide perovskite processes by ALD. Further, the ALD-grown PbI 2 was characterized by annular dark-field scanning transmission electron microscopy (ADF-STEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), X-ray fluorescence (XRF), and X-ray photoemission spectroscopy (XPS), among other methods. This work presents the first step to synthesize lead halide perovskites with atomic control for applications such as interfacial layers in photovoltaics and for deposition in microcavities for lasing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Influence of Dipole Polarization of an Emitting Surface on Autoemission Thresholds of a Multitip Silicon Cathode Matrices

Regularities of changes in the structural-phase composition and morphological and field-emission characteristics of surface-structured silicon wafers with various types of conductivity have been studied. It is shown that the use of a fluorocarbon plasma in the process of structuring, along with a carbon mask coating, allows obtaining preset autoemission currents of silicon cathode matrices when the external electric-field strength varies in a wide range irrespectively of the change of the gain factors of the fields of the emitting protrusions. The dominant role of dipole polarization in autoemission of electrons in surface-modified silicon structures has been established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31 P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterized using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Because electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1981

A Module Experimental Process System Development Unit (MEPSDU)

Design work for a photovoltaic module, fabricated using single crystal silicon dendritic web sheet material, resulted in the identification of surface treatment to the module glass superstrate which improved module efficiencies. A final solar module environmental test, a simulated hailstone impact test, was conducted on full size module superstrates to verify that the module's tempered glass superstrate can withstand specified hailstone impacts near the corners and edges of the module. Process sequence design work on the metallization process selective, liquid dopant investigation, dry processing, and antireflective/photoresist application technique tasks, and optimum thickness for Ti/Pd are discussed. A noncontact cleaning method for raw web cleaning was identified and antireflective and photoresist coatings for the dendritic webs were selected. The design of a cell string conveyor, an interconnect feed system, rolling ultrasonic spot bonding heat, and the identification of the optimal commercially available programmable control system are also discussed. An economic analysis to assess cost goals of the process sequence is also given.

Source record↗
DOE OSTI2016

Injection molding of high precision optics for LED applications made of liquid silicone rubber

Light Emitting Diodes (LED) conquer the growing global market of lighting technologies. Due to their advantages, they are increasingly used in consumer products, in lighting applications in the home and in the mobility sector as well as in industrial applications. Particularly, with regard to the increasing use of high-power LED (HP-LED) the materials in the surrounding area of the light emitting semiconductor chip are of utmost importance. While the materials behind the semiconductor chip are optimized for maximum heat dissipation, the materials currently used for the encapsulation of the semiconductor chip (primary optics) and the secondary optics encounter their limits due to the high temperatures. In addition certain amounts of blue UV radiation degrade the currently used materials such as epoxy resins or polyurethanes for primary optics. In the context of an ongoing joint research project with various partners from the industry, an innovative manufacturing method for high precision optics for LED applications made of liquid silicone rubber (LSR) is analyzed at the Institut of Plastics Processing (IKV), Aachen. The aim of this project is to utilize the material-specific advantages of high transparent LSR, especially the excellent high temperature resistance and the great freedom in design. Therefore, a high integrated injection molding process is developed. For the production of combined LED primary and secondary optics a LED board is placed in an injection mold and overmolded with LSR. Due to the integrated process and the reduction of subcomponents like the secondary optics the economics of the production process can be improved significantly. Furthermore combined LED optics offer an improved effectiveness, because there are no losses of the light power at the transition of the primary and secondary optics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2009

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗