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At least 1,441 records · Page 80

Visible to NIR‐II Photoluminescence of Atomically Precise Gold Nanoclusters

Abstract Atomically precise gold nanoclusters (NCs) have emerged as a new class of precision materials and attracted wide interest in recent years. One of the unique properties of such nanoclusters pertains to their photoluminescence (PL), for it can widely span visible to near‐infrared–I and –II wavelengths (NIR‐I/II), and even beyond 1700 nm by manipulating the size, structure, and composition. The current research efforts focus on the structure–PL correlation and the development of strategies for raising the PL quantum yields, which is nontrivial when moving from the visible to the near‐infrared wavelengths, especially in the NIR–II regions. This review summarizes the recent progress in the field, including i) the types of PL observed in gold NCs such as fluorescence, phosphorescence, and thermally activated delayed fluorescence, as well as dual emission; ii) some effective strategies that are devised to improve the PL quantum yield (QY) of gold NCs, such as heterometal doping, surface rigidification, and core phonon engineering, with double‐digit QYs for the NIR PL on the horizons; and iii) the applications of luminescent gold NCs in bioimaging, photosensitization, and optoelectronics. Finally, the remaining challenges and opportunities for future research are highlighted.

Liu, Zhongyu↗

Engineering Anomalously Large Electron Transport in Topological Semimetals

Abstract Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX 2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe 2 compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

36 MATERIALS SCIENCE↗

A Catalyst-Like System Enables Efficient Perovskite Solar Cells

High-quality perovskite films are essential for achieving high performance of optoelectronic devices; However, solution-processed perovskite films are known to suffer from compositional and structural inhomogeneity due to lack of systematic control over the kinetics during the formation. Here, in this work, the microscopic homogeneity of perovskite films is successfully enhanced by modulating the conversion reaction kinetics using a catalyst-like system generated by a foaming agent. The chemical and structural evolution during this catalytic conversion is revealed by a multimodal synchrotron toolkit with spatial resolutions spanning many length scales. Combining these insights with computational investigations, a cyclic conversion pathway model is developed that yields exceptional perovskite homogeneity due to enhanced conversion, having a power conversion efficiency of 24.51% for photovoltaic devices. This work establishes a systematic link between processing of precursor and homogeneity of the perovskite films.

14 SOLAR ENERGY↗

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

Abstract The electronic and optical properties of 2D transition metal dichalcogenides are dominated by strong excitonic resonances. Exciton dynamics plays a critical role in the functionality and performance of many miniaturized 2D optoelectronic devices; however, the measurement of nanoscale excitonic behaviors remains challenging. Here, a near‐field transient nanoscopy is reported to probe exciton dynamics beyond the diffraction limit. Exciton recombination and exciton–exciton annihilation processes in monolayer and bilayer MoS 2 are studied as the proof‐of‐concept demonstration. Moreover, with the capability to access local sites, intriguing exciton dynamics near the monolayer‐bilayer interface and at the MoS 2 nano‐wrinkles are resolved. Such nanoscale resolution highlights the potential of this transient nanoscopy for fundamental investigation of exciton physics and further optimization of functional devices.

2D materials↗

A Lead‐Free Ferroelectric 2D Dion–Jacobson Tin Iodide Perovskite

2D hybrid organic–inorganic halide perovskites emerge as a new class of 2D semiconductors with the potential to combine excellent optoelectronic properties with symmetry-enabled properties such as ferroelectricity. Although many lead-based ferroelectric 2D halide perovskites are reported, there is yet to be a conclusive report of ferroelectricity in tin-based 2D perovskites. Here, the structures and properties of a new series of 2D Dion–Jacobson (DJ) Sn perovskites: (4AMP)SnI 4 , (4AMP)(MA)Sn 2 I 7 , and (4AMP)(FA)Sn 2 I 7 (4AMP = 4-(aminomethyl)piperidinium, MA = methylammonium, and FA = formamidinium), are reported. Structural characterization reveals that (4AMP)SnI 4 is polar with in-plane spontaneous polarization whereas (4AMP)(MA)Sn 2 I 7 and (4AMP)(FA)Sn 2 I 7 are centrosymmetric. Further, (4AMP)SnI 4 displays second harmonic generation (SHG) and polarization-electric field hysteresis measurements confirm it is ferroelectric with a spontaneous polarization of 10.0 µC cm −2 at room temperature. (4AMP)SnI 4 transitions into a centrosymmetric structure above 367 K. As the first direct experimental observation of the spontaneous ferroelectric polarization of a Sn-based 2D hybrid perovskite, this work opens up environmentally friendly 2D tin halide perovskites for ferroelectricity and other physical property studies.

2D↗

Advances in Mixed Tin‐Lead Narrow‐Bandgap Perovskites for Single‐Junction and All‐Perovskite Tandem Solar Cells

Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.

14 SOLAR ENERGY↗

Synthetic Control of Water-Stable Hybrid Perovskitoid Semiconductors

Hybrid metal-halide perovskites and their derived materials have emerged as the next-generation semiconductors with a wide range of applications, including photovoltaics, light-emitting devices, and other optoelectronics. Over the past decade, numerous single-crystalline perovskite derivatives have been synthesized and developed. However, the synthetic methods for these derivatives mainly rely on acidic crystallization conditions. This approach leads to crystals comprising metal halide building blocks, which show problematic stability when directly exposed to water. In this study, a methodology is developed for synthesizing hybrid metal-halide compounds using lead iodide and the zwitterionic bifunctional molecule cysteamine (CYS), to form various perovskitoid structures under a broad pH range. Interestingly, the different pH conditions alter the coordination environment of lead halides, leading to lead-sulfide and lead-nitride covalent bond formation. This modification significantly enhances their stability when in direct contact with water, lasting for months. Photoluminescence measurements and first principal density functional theory (DFT) calculations reveal that the perovskitoids synthesized under basic and acidic pH conditions exhibit a direct bandgap nature, while those synthesized under neutral conditions display an indirect bandgap. This approach opens new avenues for manipulating synthetic methods to develop water-stable hybrid semiconductors suitable for a wide range of applications, such as solid-state light emitters.

36 MATERIALS SCIENCE↗

Exciton Dynamics in Layered Halide Perovskite Light‐Emitting Diodes

Abstract Layered halide perovskites have garnered significant interest due to their exceptional optoelectronic properties and great promises in light‐emitting applications. Achieving high‐performance perovskite light‐emitting diodes (PeLEDs) requires a deep understanding of exciton dynamics in these materials. This review begins with a fundamental overview of the structural and photophysical properties of layered halide perovskites, then delves into the importance of dimensionality control and cascade energy transfer in quasi‐2D PeLEDs. In the second half of the review, more complex exciton dynamics, such as multiexciton processes and triplet exciton dynamics, from the perspective of LEDs are explored. Through this comprehensive review, an in‐depth understanding of the critical aspects of exciton dynamics in layered halide perovskites and their impacts on future research and technological advancements for layered halide PeLEDs is provided.

Baek, Sung‐Doo↗

Porogen‐Integrated Rapid Oxidation Enables Structured Mesoporous Metal Oxide Films

Structured metal oxide films have promise in optoelectronics, sensing, energy storage, and catalysis but their uptake is predominately limited due to their long and high‐temperature syntheses. Here, in this study, a self‐assembling polymer is used which can act as a chelating fuel source in a solution combustion reaction to generate highly structured mesoporous aluminum oxide films at <250 °C in a matter of minutes through a process termed porogen‐integrated rapid oxidation (PiRO). The resulting films with thicknesses up to 500 nm show an open‐cell, face‐centered cubic structure of spheroidal pores. Further, an additional ligand can be included to control the self‐assembly step to yield both through‐film ordering or tunable disordering for increased pore volume as confirmed by both grazing incidence small angle X‐ray scattering and ellipsometry. Finally, roll‐to‐roll manufacturing with PiRO is demonstrated on flexible polymeric substrates. The method offers a tunable, scalable, low‐temperature, and lower‐cost method to generate large‐area structured mesoporous metal oxide films.

36 MATERIALS SCIENCE↗

Electronic Excitation‐Driven β‐Ga 2 O 3 Metastability Transformation and Self‐Organization Mechanism: β→κ/γ/δ Phases

Here, irradiation-driven multiphase self-organization presents emergent opportunities for the customization of nanoscale engineering properties, dynamically tuning strain-field distributions and interfacial electronic structures. Responding to intense electronic excitation-induced energy deposition, the dominant phase transformations, with varying Gibbs free energy $Δ,G^o_f$ are confirmed as β → κ → γ → δ that are located in specific microregions for Gallium (III) oxide (Ga 2 O 3 ), as follows: (i) Surface-localized interstitial accumulation under compressive stress triggers β → δ via semi-coherent interface formation. (ii) Tensile stress within latent tracks drives vacancy-mediated oxygen layer truncation (4/12 periodicity along ⟨0001⟩), stabilizing coherent 4H (ABCB) κ and 3C (ABC) β (ABC) interfaces through strain-compensated octahedral distortion. (iii) Screw dislocation-mediated lattice relaxation induces β → γ via cation disordering (Ga 3+ occupancy at β-interstitial sites), forming metastable spinel γ with mixed occupancy across 16d/8a Wyckoff sites. Irradiation-driven β-Ga 2 O 3 →κ/γ/δ transitions, as mechanistically revealed via inelastic thermal spike (i-TS) calculations and molecular dynamics simulations, induce defect-mediated nonlinear photoresponse, critical for optoelectronic engineering.

Han, Xinqing [Shandong Univ., Jinan (China)]↗

State‐of‐the‐Art Electron‐Selective Contacts in Perovskite Solar Cells

Abstract Perovskite solar cells (PSCs) have attracted much attention as efficiencies go beyond 22%. To achieve these impressive numbers, the PSC scientific community is working to improve both the perovskite optoelectronic properties, and, importantly, the interfacial properties of the adjacent electron selective contacts (ESLs). Improvements in both fronts have happened concurrently and are responsible for these rapid efficiency gains. Here, the authors review the recent advances in understanding the role of ESLs on performance improvements. ESLs can be prepared from either organic and inorganic semiconductors, or a combination of both, and their key characteristics are summarized in detail. Current state‐of‐the‐art PSCs employ fully inorganic ESLs made of a thin mesoporous TiO 2 or a planar SnO 2 , with reported certified efficiencies of 22.7 and 20.9%, respectively. While TiO 2 shows excellent performance in the short term, it has also been shown to induce solar cell degradation due to its UV absorption properties. Understanding ESLs has been instrumental in the rapid development of PSCs; however, some challenges remain in terms of understanding the role of different ESLs on the long‐term stability of the devices.

Sun, Shijing↗

Strain-Induced Structural Deformation Study of 2D Mo x W (1- x ) S 2

The potential ability of tuning properties and its possible applications in the fields of optoelectronics and/or flexible electronics, has increased the demand for 2D alloys in recent times. Understanding the mechanical performance of 2D materials under extreme conditions, such as strain, stress, and fracture is essential for the reliable electronic devices based on these structures. Here, combined molecular dynamics (MD) simulations and in situ Raman spectroscopic techniques are used to study the mechanical performance of a 2D alloy system, MoxW (1- x ) S 2 . It is determined that W substitution in MoS 2 causes solid-solution strengthening and increase in the Young's modulus values. Higher W content decreases failure strain for MoS 2 . Due to spatially resolved Raman spectroscopy and MD simulations results, a detailed model to explain failure mechanisms in MoxW (1- x ) S 2 alloys is proposed.

36 MATERIALS SCIENCE↗

Dual‐Scale Nanostructures via Evaporative Assembly

Abstract Dual‐scale hierarchical structures with regular microscale patterns and varying degree of nanoscale crystalline order are synthesized on physically and chemically homogeneous substrates by evaporative self‐assembly with a suspension of DNA‐functionalized nanoparticles (NPs) with a charged core shell. For a certain NP concentration range, periodic concentric rings in a stripe‐like micropattern are produced over macroscale surface areas by an NP monolayer with hexagonal lattice structure at the nanoscale. The stripe width, spacing, and nanoparticle ordering can be controlled by varying the NP concentration. The results indicate that the interplay between “stick‐slip” motion of the droplet contact line and coulombic and steric NP interactions control the formation of the observed structures. A simple analytical model is proposed to account for the experimental observations and guide the future design of different nanostructure morphologies. This work demonstrates a simple cost‐effective mask‐free method for fabricating large‐area nanostructured 2D materials and metasurfaces for applications ranging from energy conversion/storage to optoelectronics and nanophotonics.

Srivastava, Sunita↗

Evaporative Assembly: Dual-Scale Nanostructures via Evaporative Assembly (Adv. Mater. Interfaces 7/2020)

In article number 1901954, Sunita Srivastava, Surita R. Bhatia, and co-workers demonstrate that evaporative assembly of functionalized nanoparticles can yield striking dual-scale hierarchical structures. Regular microscale stripes of nanoparticle monolayers with hexagonal nanoscale order are obtained on physically and chemically homogeneous substrates through evaporation of a suspension of DNAfunctionalized nanoparticles with a charged shell. The stripe width, spacing and nanoparticle ordering can be controlled by varying nanoparticle concentration and can be described by a simple analytical model. The results indicate that the interplay between “stick-slip” motion of the droplet contact line and Coulombic and steric nanoparticle interactions control the formation of the observed structures. Finally, this work demonstrates a simple cost-effective mask-free method for fabricating nanostructured 2D materials and metasurfaces for applications ranging from energy conversion/storage to optoelectronics and nanophotonics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Role of Solvent in the Oriented Growth of Conductive Ni‐CAT‐1 Metal‐Organic Framework at Solid–Liquid Interfaces

Abstract A controlled growth of two‐dimensional (2D) π‐conjugated metal‐organic frameworks (MOFs) on solid substrates can open exciting opportunities for the application of 2D MOFs as optoelectronic devices. Some factors like solvent composition and type of substrates are known to influence the properties of solution‐processed 2D MOF crystals; however, a mechanistic understanding of how interactions between solvent, substrate, and precursors affect heterogeneous nucleation has been limited. Here, it is reported that the structure of Ni‐catecholate (Ni‐CAT‐1) MOFs at a solid–liquid interface is controlled by solvent–substrate and solvent–MOF precursor interactions. Specifically, the structure of the MOF film can be controlled by varying the affinity of the solvent to the substrate. As a fraction of N , N ‐dimethylformamide (DMF) in a binary solvent mixture of water and DMF increases, the arrangement of Ni‐CAT‐1 crystals varies from vertically aligned nanorods to the graphite substrate to less ordered nanorods with the lower initial nucleation number density of Ni‐CAT‐1 crystals on the surface.

2D materials↗

Effect of Thermal Oxidation on the Structure, Surface Texturing, and Microstructure Evolution in Nanocrystalline Ga-O-N Films

An extensive examination of the nanoscale, crystallographic growth dynamics of the system, which is impacted by the thermal energy given to the GaN, is carried out to derive a deeper understanding of the growth kinetics, morphology and microstructure evolution, chemical bonding, and optical properties of Ga-O-N films. Thermal annealing of GaN films is performed in the temperature range of 900–1200 °C. Crystal structure, phase formation, chemical composition, surface morphology, and microstructure evolution of Ga-O-N films are investigated as a function of temperature. Increasing temperature induces surface oxidation, which results in the formation of stable β-Ga2O3 phase in the GaN matrix, where the overall film composition evolves from nitride (GaN) to oxynitride (Ga-O-N). While GaN surfaces are smooth, planar, and featureless, oxidation induced granular-to-rod shaped morphology evolution is seen with increasing temperature to 1200 °C. The considerable texturing and stability of the nanocrystalline Ga-O-N on Si substrates can be attributed to the surface and interface driven modification because of thermal treatment. Corroborating with structure and chemical changes, Raman spectroscopic analyses also indicate that the chemical bonding evolution progresses from fully Ga-N bonds to Ga-O-N. While the GaN oxidation process starts with the formation of β-Ga 2 O 3 at an annealing temperature of 1000 °C, higher annealing temperatures induce structural distortion with the potential formation of Ga-O-N bonds. The structure-phase-chemical composition correlation, which will be useful for nanocrystalline materials for selective optoelectronic applications, is established in Ga-O-N films made by thermal treatment of GaN.

36 MATERIALS SCIENCE↗

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗

Low-Temperature Gold Deposition Improves CdTe Back Contacts

Improved back contacts can benefit CdTe photovoltaics (PV). In this work, Cd(Se,Te) PV absorbers are cooled during Au evaporation to thermally quench a chemical reaction occurring between gold and CdTe and the generation of a reaction product that lowers device efficiency. Reducing substrate temperature enhances PV power conversion efficiency via open-circuit voltage and fill factor increases. X-ray photoelectron spectroscopy (XPS) reveals that lower temperature also reduces chemical perturbations of the CdTe, potentially linking back contact formation to a CdTe degradation product that hinders PV performance. Comparing reaction enthalpy and substrate heating energy shows that back contact formation by sputtering elemental metals onto ZnTe may exhibit a degradation pathway analogous to that of CdTe/Au reported here. Degradation-diminishing contact formation processes are therefore of general interest for optoelectronic devices, and the reduced substrate temperature in this study is one example.

14 SOLAR ENERGY↗