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A simple, versatile technique for making very small, sturdy, reproducible microbridges is described. When exposed to air, to mechanical shock, or to repeated temperature cycling, the junctions do not deteriorate over long times. They can be as small as 2,000 A wide by 1,000 A long. Methods for obtaining strongly adherent, small-grained, homogeneous tin film, and for the protection of the junctions from electrical pulses, are also described.
Technique employs pre-aged, void-free junction composed of parent materials. Basic process for Kirkendall void inhibition can be applied to thermionic power systems, high temperature seals, high temperature junctions between any two metals of differing melting points where Kirkendall void formation would be detrimental.
Published document discusses devices which are based on weak-link Josephson elements that join superconductors. Links can take numerous forms, and circuitry utilizing links can perform many varied functions with unprecedented sensitivity. Theoretical review of Josephson's junctions include tunneling junctions, point contact devices, microbridges, and proximity-effect devices.
Rectification characteristics of non-superconducting metal-barrier-metal junctions deduced from electronic tunneling have been observed experimentally for optical frequency irradiation of the junction. The results provide verification of optical frequency Fermi level modulation and electronic tunneling current modulation.
A phase lock servo system is described for synchronizing the rotation of a slip ring assembly with the rotation of an air bearing table so that a minimum of torque will be imparted through cables extending from the slip ring assembly to the air bearing table as such is rotated. The system includes two servo loops. The first servo loop includes a rate gyroscope carried on the air bearing table which generates a signal through a summing junction to be compared with a signal coming from a tachometer coupled to the slip ring assembly. The corrective signal is applied to a torque motor for rotating the slip ring assembly. The second servo loop includes a pair of photo detector cells which generate pulses responsive to the rotation of the air bearing table and slip ring assembly which are fed through a phase detector, and a variable gain amplifier to the summing junction circuit to provide a fine adjustment for rotating the slip ring assembly.
A receiving system for automatically selecting a desired one of two approximately orthogonally polarized signals occupying the same bandwidth, is described. Received signals are provided by any orthomode antenna system at a pair of output ports, i.e., right hand and left hand circular polarizations or two linear polarizations. The received signals are then applied to the inputs of a hybrid junction to produce sum and difference signals. The resulting sum signal at one output port comprises components of the undesired one of two orthogonally polarized signals and is used to coherently detect and dynamically balance out the undesired signal components that are included at the difference signal port. The desired one of two orthogonally polarized signals is thereby provided at the difference port of the hybrid junction. Feedback loops are used to effect dynamic balancing.
The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.
Parametric amplification of microwaves was observed using thin-film junctions of the Anderson-Dayem type. A series of 80 such junctions were incorporated into the upper conductor of a broadband 50-ohm microstrip transmission line with no DC bias. The amplifier was operated in the 'doubly degenerate' mode with signal, pump, and idler frequencies closely and equally spaced. An electronic gain of 12 dB at 10 GHz was observed. The bandwidth was measured to be 1 GHz and the noise temperature to be less than 20 K.
A detailed theoretical analysis of an n-on-p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 10,000 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 microns, respectively. The improved efficiency is primarily due to a built-in electric field, caused by the band-gap gradation, accelerating photogenerated holes toward the p-n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.
The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.
The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.
Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.
Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.
A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.
An automatic system for recognizing synaptic junctions would allow analysis of large samples of tissue for the possible classification of specific well-defined sets of synapses based upon structural morphometric indices. In this paper the three steps of our system are described: (1) cytochemical tissue preparation to allow easy recognition of the synaptic junctions; (2) transmitting the tissue information to a computer; and (3) analyzing each field to recognize the synapses and make measurements on them.
A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity
A first order theory of the edge-illuminated p(+)-n-n(+) silicon solar cell under very high injection levels has been derived. The very high injection level illuminated J-V characteristic is derived for any general base width to diffusion length (W/L) ratio and it includes the minority carrier reflection by the n-n(+) high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jsc and Voc on temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.
Apparatus consists of thermocouple connected to semiconductor reference junction. Junction is connected to amplifier that boosts signal by 1,000. High-level signal is displayed on recorder and fed into second amplifier where it is compared with signal from potentiometer of programmed dc reference in bag-temperature programer. Difference in signals indicates output voltage. Remaining circuitry provides zero-phase, time-proportion control of heaters such that heater power is directly proportional to error signal.