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At least 1,441 records · Page 80

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QW devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

An architecture for integrating planar and 3D cQED devices

Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high-Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of basal-plane thermal conductivity and interface thermal conductance on the hot spot temperature in graphene electronic devices

In this study, electrostatic force microscopy and scanning thermal microscopy are employed to investigate the electric transport and localized heating around defects introduced during transfer of graphene grown by chemical vapor deposition to an oxidized Si substrate. Numerical and analytical models are developed to explain the results based on the reported basal-plane thermal conductivity, κ, and interfacial thermal conductance, G , of graphene and to investigate their effects on the peak temperature. Irrespective of the κ values, increasing G beyond 4 × 10 7 W m –2 K –1 can reduce the peak temperature effectively for graphene devices made on sub-10 nm thick gate dielectric, but not for the measured device made on 300-nm-thick oxide dielectric, which yields a cross-plane thermal conductance ( G ox ) much smaller than the typical G of graphene. In contrast, for typical G values reported for graphene, increasing κ from 300 W m –1 K –1 toward 3000 W m –1 K –1 is effective in reducing the hot spot temperature for the 300-nm-thick oxide devices but not for the sub-10 nm gate dielectric case, because the heat spreading length (l) can be appreciably increased relative to the micron-scale localized heat generation spot size ( r 0 ) only when the oxide layer is sufficiently thick. As such, enhancement of κ increases the vertical heat transfer area above the gate dielectric only for the thick oxide case. In all cases considered, the hot spot temperature is sensitive to varying G and κ only when the G / G ox ratio and r 0 /l ratio are below about 5, respectively.

36 MATERIALS SCIENCE↗

A 5- μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering

Here, we have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through > 8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ~280 eV (C K ) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft C K X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. Finally, the measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.

36 MATERIALS SCIENCE↗

Particle resonances in toroidal fusion devices

Resonances of high energy particles in magnetic confinement devices due to electromagnetic instabilities can strongly modify the distribution, leading to a reduction in fusion power and even discharge termination and particle loss to the device walls through avalanche. The existence of a mode particle resonance depends on properties of the equilibrium, particle trajectories, and perturbation mode harmonic content. Resonance location is a function of particle energy and equilibrium field line helicity. Different methods for finding resonance location and energy dependence are developed. The properties of resonances are discussed using examples from magnetic fusion devices. Here, we show that if mode resonances exist at low particle energy, they very likely also exist at high energy, thus modifying high energy beam particles and fusion products. It is possible for a resonance to appear due to mode induced orbit helicity modification when it is forbidden at low mode amplitude.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phase-resolved electrical detection of coherently coupled magnonic devices

We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/Permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n=1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py- or YIG-dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Perspective: Reproducible Coherence Characterization of Superconducting Quantum Devices

As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.

McRae, Corey H.↗

Origin of layered perovskite device efficiencies revealed by multidimensional time-of-flight spectroscopy

Mixtures of layered perovskite quantum wells with different sizes form prototypical light-harvesting antenna structures in solution-processed films. Gradients in the bandgaps and energy levels are established by concentrating the smallest and largest quantum wells near opposing electrodes in photovoltaic devices. Whereas short-range energy and charge carrier funneling behaviors have been observed in layered perovskites, our recent work suggests that such light-harvesting processes do not assist long-range charge transport due to carrier trapping at interfaces between quantum wells and interstitial organic spacer molecules. Here, we apply a two-pulse time-of-flight technique to a family of layered perovskite systems to explore the effects that interstitial organic molecules have on charge carrier dynamics. In these experiments, the first laser pulse initiates carrier drift within the active layer of a photovoltaic device, whereas the second pulse probes the transient concentrations of photoexcited carriers as they approach the electrodes. The instantaneous drift velocities determined with this method suggest that the rates of trap-induced carrier deceleration increase with the concentrations of organic spacer cations. Overall, our experimental results and model calculations suggest that the layered perovskite device efficiencies primarily reflect the dynamics of carrier trapping at interfaces between quantum wells and interstitial organic phases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 μm, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3–33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 10 11 , when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm 2 charge in Al 1-x B x N via electron microscopy, Al 1-x B x N ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn 1-x Mg x O. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

30 DIRECT ENERGY CONVERSION↗

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Physics↗

Impact of direct exchange coupling via the insulator on the magnetic tunnel junction based molecular spintronics devices with competing molecule induced inter-electrode coupling

The magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) approach is suitable for mass production. This approach provides solutions to fabrication difficulties related to reliably connecting molecular device elements to the ferromagnets (FMs). To producing MTJMSD, the molecular channels are bridged across the insulator of an MTJ testbed with exposed side edges. In an MTJMSD, two FMs are simultaneously connected by an insulator film and the molecular channels along the exposed sides. In our prior experimental studies, we observed that molecules could produce strong coupling between ferromagnets in the presence of the competing coupling via an insulator. In this paper, our Monte Carlo Simulation (MCS) was used to study the impact of coupling variation via insulator (a.k.a. Ji) on the magnetic properties of an MTJMSD. We studied the effect of Ji while varying the molecule induced antiferromagnetic exchange coupling. The ferromagnetic or antiferromagnetic nature and magnitude of Ji determined the resultant effect. Antiferromagnetic Ji enhanced the pre-existing antiferromagnetic molecular coupling effect. Ferromagnetic Ji competed with the opposite nature of antiferromagnetic molecular coupling. Our MCS may help to understand the impact of insulator thickness and defects on the molecular spintronics device performance and design process.

36 MATERIALS SCIENCE↗

Integrated optical devices based on sol – gel waveguides using the temperature dependence of the effective refractive index

A possibility of designing optical waveguide devices based on sol – gel SiO{sub 2} – TiO{sub 2} films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm{sup -1} is demonstrated. The film and output-prism parameters are optimised. (fibreoptic and nonlinear-optic devices)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Analysis of the influence of geometrical dimensions and external magnetic field on optical properties of InGaAs/GaAs quantum-dot slow light devices

The effect of the size of quantum dots (QDs) and an external magnetic field on InGaAs/GaAs QD slow light devices based on coherent population oscillations (CPOs) is simulated. Physical parameters of QDs, such as radius and height, are varied around their central mean values, which are assumed to be 8 and 5 nm, respectively. An attempt is made to obtain much better optical characteristics by applying a strong external magnetic field. The methods used to improve the optical properties of a QD slow light device, such as the slow down factor (SDF), bandwidth and exciton binding energy, are discussed. It is shown that a QD slow light device makes it possible to shift the centre frequency in a range of 5 THz and to achieve a slow down factor of 5000. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Development of Irradiation Test Devices for Transient Testing

The Transient Reactor Test facility (TREAT) resumed operations in 2017 in order to reclaim its crucial role in nuclear-heated fuel safety research. TREAT’s historic era of operation (1959-1994) was best known for integral-scale testing of large fuel specimens/bundles under postulated reactor plant accident conditions, but TREAT also supported smaller-scale phenomena identification tests that elucidated fundamental behaviors and paved the way for these integral-scale tests. Advances in modern computational capabilities and a resurgence of interest in novel reactor technologies have created an opportunity for emphasizing modernized science-based and separate effects tests once again at TREAT. An innovative approach to this type of testing has been developed to leverage minor radioactivity built-in during brief TREAT irradiations by arranging smaller fuel specimens in low activation hardware so that they can be easily extracted and shipped for post irradiation examination within weeks. This recently-established capability, termed the Minimal Activation Retrievable Capsule Holder (MARCH) irradiation vehicle system, includes capabilities for cost-effective simplified-environment testing of centimeter-scale fuel samples of various geometries, temperature-controlled irradiations of millimeter-size samples for lower-length-scale model development, liquid-metal bonded heat sink capsules for controlling transient temperature response in fuel rodlets, and an innovative approach to high throughput irradiation of transient sensors and instrumentation. The MARCH system’s capabilities will also set the foundation for fuel safety research performed in larger integral-scale test devices with coolant environments representing reactor plants. Based upon historic approaches, but modernized to meet current nuclear technology needs, these larger irradiation devices include flowing pressurized water (including the ability to depressurize to steam) as well liquid metal cooling loops for various fuel rod and small bundle specimens. Here, this paper describes the recently-established MARCH system and current trajectory to enabling advanced transient science with a suite of irradiation test devices.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Development of a Multi-Press Assembly Device for Planar Dynamic Material Property Targets

A class of dynamic material property (DMP) experiments on the Sandia National Laboratories (SNL) pulse power Z-Machine requires planar samples to be held in a panel assembly. A custom press device to fabricate the assemblies has the ability to assemble one sample, window, or stack at a time, resulting in a one week lead time for a typical three-pocket panel assembly. Fabrication of targets with more than three pockets can take longer. In late 2015, General Atomics (GA) conceptualized a new multi-press device to enable several samples, windows, or stacks to be assembled simultaneously, and a prototype was designed, procured, and outfitted in six months. Since June 2016, this multi-press design has successfully assembled 60 planar DMP targets. Furthermore, the development considerations for this new device and the resulting benefits for the fabrication of targets are discussed.

36 MATERIALS SCIENCE↗

Devices for SRF material characterization

The surface resistance Rs of superconducting materials can be obtained by measuring the quality factor of an elliptical cavity excited in a transverse magnetic mode (TM010). The value obtained has however to be taken as averaged over the whole surface. A more convenient way to obtain Rs, especially of materials which are not yet technologically ready for cavity production, is to measure small samples instead. These can be easily man ufactured at low cost, duplicated and placed in film deposition and surface analytical tools. A commonly used design for a device to measure Rs consists of a cylindrical cavity excited in a transverse electric (TE110) mode with the sample under test serving as one replaceable endplate. Such a cavity has two drawbacks. For reasonably small samples the resonant frequency will be larger than frequencies of interest concerning SRF application and it requires a reference sample of known Rs. In this article we review several devices which have been designed to overcome these limitations, reaching sub - nΩ resolution in some cases. Some of these devices also comprise a parameter space in frequency and temperature which is inaccessible to standard cavity tests, making them ideal tools to test theoretical surface resistance models.

43 PARTICLE ACCELERATORS↗

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗