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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Sulfurization Engineering of One–Step Low–Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS 2 and WS 2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS 2 and WS 2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO 2 /Si substrates is achieved. Following this, MoS 2 and WS 2 memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10 3 –10 5 ) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. Furthermore, the demonstration of large-scale MoS 2 and WS 2 memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

This study reports on p-channel bottom-gate organic thin-film transistors (OTFT) that achieve low-voltage operation with a thin bilayer gate dielectric of CYTOP/HfO 2 that also leads to high operational stability. A bottom-gate geometry allows the thickness of the gate dielectric to be reduced to 17 nm, thereby increasing the gate dielectric capacitance density to a value of up to 258 nF/cm 2 . All OTFTs yielded threshold voltages (V TH ) lower than -1 V, thereby providing minimum operating voltage (gate to source voltage ~ V TH ) of -1 V with field-effect mobility values in the range from 0.3 to 0.8 cm 2 /Vs and subthreshold swing values below 100 mV/dec. Operational stability during DC bias stress was found similar to that measured in devices with a top-gate geometry, with about 1% of drain current change after 6 h. Here, using a double-stretched exponential function, the operational stability characteristics were modeled. It was found that by increasing the metal oxide layer thickness, the threshold voltage can shift toward positive values under DC stress tests. For CYTOP layer thicknesses above 15 nm, a thicker CYTOP layer was found to shift the threshold voltage in the opposite direction toward negative values. Furthermore, these p-channel bottom-gate organic transistor with a bilayer gate dielectric of CYTOP/HfO 2 combine high mobility, high operational stability, and lower voltage operation of -1 V compared to top-gate OTFTs.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Thin-film hermeticity - A quantitative analysis of diamondlike carbon using variable angle spectroscopic ellipsometry

This paper reports on the successful application of variable-angle spectroscopic ellipsometry to quantitative thin-film hermeticity evaluation. It is shown that, under a variety of film preparations and moisture introduction conditions, water penetrates only a very thin diamondlike carbon (DLC) top surface-roughness region. Thus, DLC is an excellent candidate for use as protective coatings in adverse chemical and aqueous environments.

Orzeszko, S.↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of Rh–titanate (ATiO 3 ) interactions on high-surface-area perovskite thin films prepared by atomic layer deposition

Thin, ~1 nm films of CaTiO 3 , SrTiO 3 , and BaTiO 3 were deposited onto MgAl 2 O 4 by Atomic Layer Deposition (ALD) and studied as catalyst supports for Rh. Scanning Transmission Electron Microcopy (STEM) and X-Ray Diffraction (XRD) demonstrated that the films had the perovskite structure and formed uniform coatings stable up to 1073 K. Rh, added by ALD, interacted strongly with CaTiO 3 and somewhat less strongly with SrTiO 3 , while Rh on BaTiO 3 was similar to Rh on unmodified MgAl 2 O 4 . STEM measurements of Rh on CaTiO 3 films showed Rh remained well dispersed after repeated oxidations and reductions at 1073 K; however, the Rh was inactive for CO-oxidation. Rh formed small particles on SrTiO 3 films and was active for CO oxidation after reduction at 1073 K. The reducibility and catalytic activity of Rh/BaTiO 3 /MgAl 2 O 4 were similar to that of Rh/MgAl 2 O 4 . Evidence from CO-TPR, FTIR, and XPS all indicated that the degree of interaction between Rh and the three perovskite films can be ranked in the following order: Rh/CaTiO 3 /MgAl 2 O 4 > Rh/SrTiO 3 /MgAl 2 O 4 > Rh/BaTiO 3 /MgAl 2 O 4 . Here, bulk ex-solution catalysts, synthesized by reduction of ATi 0.98 Rh 0.02 O 3 (A = Ca, Sr, and Ba), were also examined for comparison.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Direct observation of the magnetic anisotropy of an Fe(II) spin crossover molecular thin film

Abstract In this work, we provide clear evidence of magnetic anisotropy in the local orbital moment of a molecular thin film based on the SCO complex [Fe(H 2 B(pz) 2 ) 2 (bipy)] (pz = pyrazol−1−yl, bipy = 2,2′−bipyridine). Field dependent x-ray magnetic circular dichroism measurements indicate that the magnetic easy axis for the orbital moment is along the surface normal direction. Along with the presence of a critical field, our observation points to the existence of an anisotropic energy barrier in the high-spin state. The estimated nonzero coupling constant of ∼2.47 × 10 −5 eV molecule −1 indicates that the observed magnetocrystalline anisotropy is mostly due to spin–orbit coupling. The spin- and orbital-component anisotropies are determined to be 30.9 and 5.04 meV molecule −1 , respectively. Furthermore, the estimated g factor in the range of 2.2–2.45 is consistent with the expected values. This work has paved the way for an understanding of the spin-state-switching mechanism in the presence of magnetic perturbations.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Atomic layer deposition of MoO x thin films using Mo( i PrCp) 2 H 2 and O 3

Here, this work studied the growth of molybdenum oxide thin films with thermal atomic layer deposition (ALD) using Mo(iPrCp)2H2 and O3 as precursors. Growth parameters were determined by varying growth temperature and precursor dose times. ALD growth was exhibited in a temperature range of 100–200 °C. The growth per cycle ranged from 1.3 to 1.7 Å/cycle with a standard uniformity parameter of <5%. Attempts to grow films using H2O as an oxygen source showed no significant growth. Film properties were measured using spectroscopic ellipsometry, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and infrared spectroscopy.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Experimental approaches to well controlled studies of thin-film nucleation and growth.

Particular features and the performance of two experimental systems are described for quantitative studies of thin-film nucleation and growth processes including epitaxial depositions. System I consists of a modified LEED-Auger instrument combined with high-resolution electron microscopy. System II is a UHV electron microscope adapted for in-situ deposition studies. The two systems complement each other ideally, and the combined use of both can result in a comprehensive investigation of vapor deposition processes not obtainable with any other known method.

Poppa, H.↗
NASA NTRS1976

Linear charge coupled device detector array for imaging light propagating in an integrated thin-film optical waveguide

Device design, fabrication, and operation of a linear charge coupled device (CCD) detector array integrated with a thin film optical waveguide and applications of this structure to integrated optical signal processing and fiber optical communications were discussed. A two phase, overlapping-gate CCD is connected in parallel by means of a series of gates to an array of photodiodes. The photodiode provides an electrode free surface region so that a highly efficient waveguide detector coupling technique can be implemented. A thermally-oxidized layer of SiO2 forms an effective substrate for the optical waveguide.

Chen, C. L.↗
NASA NTRS1979

Thin-film scintillators for extended ultraviolet /UV/ response silicon detectors

The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few microns thickness exhibit broad-band absorption from less than 250 nm to about 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near UV.

Viehmann, W.↗
NASA NTRS1989

Analytic theory for the selection of Saffman-Taylor fingers in the presence of thin film effects

An analytic theory is presented for the width selection of Saffman-Taylor fingers in the presence of thin film effect. In the limit of small capillary number Ca and small gap to width ratio epsilon, such that epsilon much less than Ca much less than 1, it is found that fingers with relative width lambda less than 1/2 are possible such that lambda squared (1-lambda)/(1-2 lambda) = k epsilon/Ca(sup 3/2), where the positive constant k depends on the branch of solution and equals 2.776 for the first branch. A fully nonlinear analysis is necessary in this problem even to obtain the correct scaling law. It is also shown how in principle, the selection rule for arbitrary Ca can be obtained.

Tanveer, S.↗
NASA NTRS1994

Mechanisms of optical response in superconducting YBa2Cu3O7-delta thin films and grain-boundary weak links

The optical response of single grain-boundary weak links in superconducting YBCO thin films has been investigated. At temperatures well below the transition temperature, the grain boundary exhibits an optical response which is qualitatively different from transition edge response. Using a resistively shunted-junction model for the grain-boundary weak link, we find that the optical response below the transition temperature can be described by radiation induced thermal modulation of the critical currents of the weak links. The dependence on the bias current and the temperature distinguishes the weak-link optical response from the transition edge optical response. We discuss novel aspects of a potential radiation detector based on grain-boundary weak-link junctions.

Bhattacharya, S.↗
NASA NTRS1996

Measuring Thicknesses Of Vacuum-Deposited Organic Thin Films

Method of measuring thickness of thin organic liquid film deposited in vacuum involves use of quartz-crystal monitor (QCM) calibrated by use of witness plate that has, in turn, calibrated by measurement of absorption of infrared light in deposited material. Present procedure somewhat tedious, but once calibration accomplished, thicknesses of organic liquid deposits monitored in real time and in situ by use of QCM.

David, Carey E.↗