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NASA NTRS1983

Advanced electrical power system technology for the all electric aircraft

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.

Finke, R. C.↗

NASA NTRS1983

Advanced electrical power system technology for the all electric aircraft

Finke, R. C.↗

DOE OSTI2019

A VSM-Based DER Dispatch MINLP for Volt-VAR Control in Unbalanced Power Distribution Systems

This paper presents an optimal dispatch algorithm to coordinate customer-owned controllable loads and smart solar inverters with utility-owned voltage regulators and capacitors to meet voltage control objectives. The optimization problem is formulated as a mixed-integer nonlinear programming (MINLP) problem. A voltage sensitivity matrix (VSM) is used to linearize the effect of control actions on the voltage at customer nodes when solving the MINLP. The VSM is recalculated at each time step to improve the computational accuracy. Both discrete switching actions of the capacitor and VRs and the continuous adjustment of real and reactive power from load and smart inverters are considered in the MINLP volt-var problem formulation. The objective function minimizes the cost of all control actions and the magnitude of voltage fluctuations from the previous time period. Constraints ensure that the voltage at each node is maintained within ANSI limits and the feeder power factor is controlled within the desired range. The algorithm is tested using an actual 3-phase unbalanced distribution feeder model. Simulation results demonstrate that the proposed algorithm is computationally feasible on real circuits and improves voltage control while minimizing operational costs.

McEntee, Catie↗

NASA NTRS1991

High reliability megawatt transformer/rectifier

The goal of the two phase program is to develop the technology and design and fabricate ultralightweight high reliability DC to DC converters for space power applications. The converters will operate from a 5000 V dc source and deliver 1 MW of power at 100 kV dc. The power weight density goal is 0.1 kg/kW. The cycle to cycle voltage stability goals was + or - 1 percent RMS. The converter is to operate at an ambient temperature of -40 C with 16 minute power pulses and one hour off time. The uniqueness of the design in Phase 1 resided in the dc switching array which operates the converter at 20 kHz using Hollotron plasma switches along with a specially designed low loss, low leakage inductance and a light weight high voltage transformer. This approach reduced considerably the number of components in the converter thereby increasing the system reliability. To achieve an optimum transformer for this application, the design uses four 25 kV secondary windings to produce the 100 kV dc output, thus reducing the transformer leakage inductance, and the ac voltage stresses. A specially designed insulation system improves the high voltage dielectric withstanding ability and reduces the insulation path thickness thereby reducing the component weight. Tradeoff studies and tests conducted on scaled-down model circuits and using representative coil insulation paths have verified the calculated transformer wave shape parameters and the insulation system safety. In Phase 1 of the program a converter design approach was developed and a preliminary transformer design was completed. A fault control circuit was designed and a thermal profile of the converter was also developed.

Zwass, Samuel↗

DOE OSTI2017

Jumping-droplet electronics hot-spot cooling

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22-25°C air temperature, 20-45% relative humidity) to determine the effect of gap spacing (2-4 mm), electric field (50-250 V/cm), and heat flux (demonstrated to 13 W/cm 2 ). EFE condensation was shown to enhance the heat transfer from the local hot spot by ≈ 200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases promises hot spot heat dissipation rates approaching 120 W/cm 2 . Finally, this work provides a framework for the development of active jumping droplet based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Advanced Thermal Management for High Power Density Electronics

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22-25°C air temperature, 20-45% relative humidity) to determine the effects of gap spacing (2-4 mm), electric field (50-250 V/cm), and heat flux (demonstrated to 13 W/cm 2 ). EFE condensation was shown to enhance the heat transfer from the local hot spot by ≈ 200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases promises hot spot heat dissipation rates approaching 120 W/cm 2 . This work provides a framework for the development of active jumping droplet based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.

42 ENGINEERING↗

NASA NTRS2015

High-Efficiency Hall Thruster Discharge Power Converter

Busek Company, Inc., is designing, building, and testing a new printed circuit board converter. The new converter consists of two series or parallel boards (slices) intended to power a high-voltage Hall accelerator (HiVHAC) thruster or other similarly sized electric propulsion devices. The converter accepts 80- to 160-V input and generates 200- to 700-V isolated output while delivering continually adjustable 300-W to 3.5-kW power. Busek built and demonstrated one board that achieved nearly 94 percent efficiency the first time it was turned on, with projected efficiency exceeding 97 percent following timing software optimization. The board has a projected specific mass of 1.2 kg/kW, achieved through high-frequency switching. In Phase II, Busek optimized to exceed 97 percent efficiency and built a second prototype in a form factor more appropriate for flight. This converter then was integrated with a set of upgraded existing boards for powering magnets and the cathode. The program culminated with integrating the entire power processing unit and testing it on a Busek thruster and on NASA's HiVHAC thruster.

Jaquish, Thomas↗

NASA NTRS2016

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.

Power MOSFET↗

DOE OSTI2023

Modular chip-integrated photonic control of artificial atoms in diamond waveguides

A central goal in creating long-distance quantum networks and distributed quantum computing is the development of interconnected and individually controlled qubit nodes. Atom-like emitters in diamond have emerged as a leading system for optically networked quantum memories, motivating the development of visible-spectrum, multi-channel photonic integrated circuit (PIC) systems for scalable atom control. However, it has remained an open challenge to realize optical programmability with a qubit layer that can achieve high optical detection probability over many optical channels. Here, we address this problem by introducing a modular architecture of piezoelectrically actuated atom-control PICs (APICs) and artificial atoms embedded in diamond nanostructures designed for high-efficiency free-space collection. The high-speed four-channel APIC is based on a splitting tree mesh with triple-phase shifter Mach–Zehnder interferometers. This design simultaneously achieves optically broadband operation at visible wavelengths, high-fidelity switching (>40dB) at low voltages, submicrosecond modulation timescales (>30MHz), and minimal channel-to-channel crosstalk for repeatable optical pulse carving. Via a reconfigurable free-space interconnect, we use the APIC to address single silicon vacancy color centers in individual diamond waveguides with inverse tapered couplers, achieving efficient single photon detection probabilities (∼15%) and second-order autocorrelation measurements g (2) (0)<0.14 for all channels. The modularity of this distributed APIC–quantum memory system simplifies the quantum control problem, potentially enabling further scaling to thousands of channels.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Adaptive protection opportunities, gap assessments, and designs

This report provides a comprehensive overview of adaptive protection schemes in use by distribution systems for protection, switching and control on their systems. A significant focus is placed on how existing schemes can be impacted by increasing penetrations of DER as well as how these schemes can enable DER penetrations to increase. EPRI have conducted a survey of member utilities and performed a comprehensive literature review with the goal of baselining the research and identifying gaps with a focus on the issues that were encountered with adaptive protection on real systems. The five adaptive protection applications that are most prevalent on systems today are discussed in detail. These are weather-based fuse-saving, adaptive protection to reduce short-circuit current, adaptive protection for DER, adaptive protection for microgrids, and distribution automation. A broad overview of the technology is given for each scheme. Issues that have been encountered by utilities are highlighted and the safety and reliability impacts are also examined. As distribution systems, intelligent electronic devices, grid equipment and distribution management systems are rapidly evolving, adaptive protection techniques and technologies will become more widely adopted. This report proposes a framework for a conceptual automatic adaptive protection system. EPRI have ongoing research, development and demonstration projects in all of the constituent elements, however challenges remain to link the elements together in a secure and reliable way. EPRI will continue research into automated adaptive protection applications and challenges for the systems of today and future applications to assist system operators in managing the evolving system.

14 SOLAR ENERGY↗

NASA NTRS1961

Study of a Solar Sensor for use in Space Vehicle Orientation Control Systems

The solar sensor described herein may be used for a variety of space operations requiring solar orientation. The use of silicon solar cells as the sensing elements provides the sensor with sufficient capability to withstand the hazards of a space environment. A method of arranging the cells in a sensor consists simply of mounting them at a large angle to the base. The use of an opaque shield placed between the cells and perpendicular to the base enhances the small-angle sensitivity while adding slightly to the bulk of the sensor. The difference in illumination of these cells as the result of an oblique incidence of the light rays from the reference source causes an electrical error signal which, when used in a battery-bridge circuit, requires a minimum of electrical processing for use in a space-vehicle orientation control system. An error which could occur after prolonged operation of the sensor is that resulting from asymmetrical aging of opposite cells. This could be periodically corrected with a balance potentiometer. A more routine error in the sensor is that produced by reflected earth radiation. This error may be eliminated over a large portion of the operation time by restricting the field of view and, consequently, the capture capability. A more sophisticated method of eliminating this error is to use separate sensors, for capture and fine pointing, along with a switching device. An experimental model has been constructed and tested to yield an output sensitivity of 1.2 millivolts per second of arc with a load resistance of 1,000 ohms and a reference light source of approximately 1,200 foot-candles delivered at the sensor.

Spencer, Paul R.↗

NASA NTRS2010

Fully Printed High-Frequency Phased-Array Antenna on Flexible Substrate

To address the issues of flexible electronics needed for surface-to-surface, surface-to-orbit, and back-to-Earth communications necessary for manned exploration of the Moon, Mars, and beyond, a room-temperature printing process has been developed to create active, phased-array antennas (PAAs) on a flexible Kapton substrate. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proven feasible for phased-array antenna systems. The carrier mobility of an individual CNT is estimated to be at least 100,000 sq cm/V(dot)s. The CNT network in solution has carrier mobility as high as 46,770 sq cm/V(dot)s, and has a large current-density carrying capacity of approx. 1,000 mA/sq cm , which corresponds to a high carrying power of over 2,000 mW/ sq cm. Such high carrier mobility, and large current carrying capacity, allows the achievement of high-speed (>100 GHz), high-power, flexible electronic circuits that can be monolithically integrated on NASA s active phasedarray antennas for various applications, such as pressurized rovers, pressurized habitats, and spacesuits, as well as for locating beacon towers for lunar surface navigation, which will likely be performed at S-band and attached to a mobile astronaut. A fully printed 2-bit 2-element phasedarray antenna (PAA) working at 5.6 GHz, incorporating the CNT FETs as phase shifters, is demonstrated. The PAA is printed out at room temperature on 100-mm thick Kapton substrate. Four CNT FETs are printed together with microstrip time delay lines to function as a 2-bit phase shifter. The FET switch exhibits a switching speed of 0.2 ns, and works well for a 5.6-GHz RF signal. The operating frequency is measured to be 5.6 GHz, versus the state-of-the-art flexible FET operating frequency of 52 MHz. The source-drain current density is measured to be over 1,000 mA/sq cm, while the conventional organic FETs, and single carbon nanotube-based FETs, are typically in the mA to mA/sq cm range. The switching voltage used is 1.8 V, while the state-of-the-art flexible FET has a gate voltage around 50 V. The gate voltage can effectively control the source-drain current with an ON-OFF ratio of over 1,000 obtained at a low Vds bias of 1.8 V. The azimuth steering angles of PAA are measured at 0deg, -14.5deg, -30deg, and 48.6deg. The measured far-field patterns agree well with simulation results. The efficiency of the 2-bit 2-element PAA is measured to be 39 percent, including the loss of transmission line, FET switch, and coupling loss of RF probes. With further optimization, the efficiency is expected to be around 50-60 percent.

Chen, Yihong↗

NASA NTRS2011

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗

DOE OSTI2019

SCEMA: a high channel density electronics module for fast waveform capture

The development of fast, highly pixelated photodetectors with single-photon sensitivity has the potential to enable a variety of new radiation detection concepts. Systems that desire to employ these detectors without loss of information demand waveform digitization with high sampling rates. Switched capacitor arrays provide a low-cost, low-power, compact solution to fast readout with high channel density. The Sandia Laboratories Compact Electronics for Modular Acquisition (SCEMA) was developed to meet these demands. A single module employs two domino ring sampling switched capacitor arrays (DRS4) [1] to provide 16 channels of up to 5 GS/s waveform digitization. This paper presents an overview of the board design and function. Calibration procedures for the module are discussed. Lastly, temporal resolution tests are presented demonstrating the module's viability as readout for high fidelity temporal measurements of single photons in suitable photodetectors.

47 OTHER INSTRUMENTATION↗

NASA NTRS2006

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗

DOE OSTI2021

Improved multiline HVDC circuit breakers with asymmetric conducting branches

Here, this paper proposes two improved multiline HVDC circuit breakers (DCBs) for HVDC grid applications, including type-1 improved multiline DCB and type-2 improved multiline DCB. The two improved DCBs draw on the core idea of extended H-bridge. m adjacent DC transmission lines share a single main breaker (MB) and surge arrester. Due to the extended H-bridge design, bidirectional current flow can be achieved by a unidirectional MB. An upper conducting branch and a lower conducting branch are connected to a DC line. The upper and lower conducting branches in the two improved multiline DCBs are asymmetric. The upper conducting branch of both two improved DCBs is formed by a load commutation switch (LCS) and an ultra-fast disconnector (UFD). The lower conducting branch of the type-1 improved scheme is composed of a diode and a UFD; and of the type-2 improved scheme is made up of diode stack. Compared with other DCBs, the proposed type-1 DCB and type-2 DCB are more cost effective. Among the five DCBs, the type-2 improved scheme requires the least number of individual switching actions. The effectiveness and feasibility of the proposed schemes are verified through simulation of a bipolar three-terminal HVDC grid in PSCAD/EMTDC.

42 ENGINEERING↗

DOE OSTI2020

Vanadium oxide coatings to self-regulate current sharing in high-temperature superconducting cables and magnets

High-temperature superconductors such as REBa 2 Cu 3 O 7-δ (REBCO, RE = rare earth) enable high-current cables and high-field magnets. By removing the turn-to-turn insulation in a magnet application, recent experiments demonstrated that REBCO magnets can self-protect against catastrophic damage during a superconducting-to-normal transition (quench), i.e., when the stored magnetic energy rapidly converts to heat. The current can bypass the hot spot during a quench, thereby reducing the localized heat dissipation. The removal of the insulation between turns, however, leads to excessive eddy currents during current ramping, thereby forcing a much-prolonged magnet charging time. To address this issue, we investigate vanadium oxide (VO x ) coatings as a temperature-dependent self-switching medium that automatically manages current sharing. VO x coatings (with 1.70 ≤ × ≤ to 2.07) were deposited by reactive cathodic arc deposition, initially on insulating glass to determine the electrical properties, and later on commercial REBCO tapes. The coatings are x-ray amorphous but with a short-range crystalline ordering according to Raman spectrometry. The resistivity of VO x decreased by at least three orders of magnitude when the temperature increased from 80 to 300 K. The coating process is compatible with commercial REBCO tapes as evidenced by the negligible change in the critical current caused by the coating process. Here, the results from current sharing experiments and circuit analysis suggest that the VO x coating can effectively self-regulate current sharing in REBCO magnets, suppress excessive eddy currents, and enable self-protection during quenches.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

Here we analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (< 3 μW) and energy (< 200 fJ per bit per μm 2 ), low read-power (~nW), and high endurance ( > millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). Lastly, these results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

36 MATERIALS SCIENCE↗