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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Quantifying contributions of ozone changes to global and arctic warming during the second half of the twentieth century

Ozone is the third most important greenhouse gas in driving global warming, mainly due to increased tropospheric ozone. About 50% of the growth of global tropospheric ozone since preindustrial time occurred during 1955–2005, with continued growth since then. Furthermore, this study quantifies the relative contributions of ozone changes during 1955–2005 to total observed global and Arctic climate changes by comparing CESM1 historical simulations with all anthropogenic and natural radiative forcings including realistic ozone changes, and with the same forcings except with constant ozone or well-mixed greenhouse gases (WMGHG). Results indicate that ozone changes during 1955–2005 have strongly enhanced the downwelling longwave flux and increased net shortwave flux at the surface, and thus significantly contributed about 0.15 °C of global mean surface warming, roughly 21%, 26% and 16% of the observed, all-forcing and WMGHG-driven trends, respectively. In the Arctic in the same period, corresponding ozone-driven warming was about 0.63 °C, roughly 48%, 40% and 25% of the same three trends. During 1979–2005, these ozone changes have markedly added about 0.25 × 10 6 km 2 to the decrease in the Arctic sea ice extent (SIE), or roughly 25%, 48%, and 40% of the same three trends. Considering that the ozone-driven radiative forcing of about 0.22 (0.06) W·m –2 in 1955–2005 (1979–2005) was about 12% (6%) of the corresponding WMGHG forcing, ozone changes had contributed disproportionately to global and Arctic warming and Arctic sea ice decline during the second half of the twentieth century. Tropospheric ozone has shown relatively steady growth since 2006 and might have significantly contributed recent observed warming over the global and the Arctic.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Environmental barrier coatings on SiC without a silicon bond coating: oxidation resistance, failure modes, and future improvements

Environmental barrier coatings (EBCs) are used to mitigate chemical reactions between SiC ceramic matrix composite (CMC) components and the H 2 O in combustion gas in turbine hot sections. CMCs are currently temperature-limited by the Si-bond coating, which melts at ~ 1414 °C. This work explores EBCs where the bond coating was removed to achieve higher operating temperatures. Various versions of enhanced roughness SiC were utilized to improve EBC adhesion to the substrates prior to 1 h furnace cycle testing in steam at 1250–1425 °C. The enhanced SiC roughness resulted in short coating lifetimes as the roughness was oxidized away with SiO 2 formation. Further, isothermal furnace exposures at 1400–1600 °C showed Yb 2 Si 2 O 7 /Yb 2 SiO 5 EBC microstructural changes, resulting in premature debonding from the substrates. Finally, this work provides baseline requirements for the development of both next-generation EBCs and bond coating strategies to overcome the current limitation of the Si-bond coating melting temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Rules for the crystallite size and dislocation density evolution in phases during α-ω transformation in Zr under high-pressure and severe plastic flow

The first in-situ X-ray diffraction (XRD) study of the evolution of the crystallite size and dislocation density in phases during plastic strain-induced phase transformation (PT) is performed utilizing α-ω PT in strongly pre-deformed commercially pure Zr as an important example. Rough diamond anvils (rough-DA) are introduced to intensify all occurring processes during heterogeneous compression of Zr in a diamond anvil cell (DAC). The main rule is found that during α-ω PT the crystallite size and dislocation density in ω-Zr depend solely on the volume fraction of ω-Zr and are independent of pressure, plastic strain tensor, its path, and initial nanostructure. Crystallite size in ω-Zr increases from 10 to 60 nm during the PT, while dislocation density reduces from 1.83×10 15 /m 2 to 0.6×10 15 /m 2 . Rough-DA produce a steady nanostructure in α-Zr before PT with smaller crystallite size and larger dislocation density than smooth-DA, leading to a reduction of the minimum pressure for α-ω PT to a record value 0.67 GPa, 9 times smaller than under hydrostatic loading and 5.1 times lower than the phase equilibrium pressure. In addition to strain, the kinetics of strain-induced PT unexpectedly depends on time. Also, strain-controlled part of kinetics is zero order, in contrast to the first-order kinetics with smooth-DA. The obtained results open a new window for understanding the mutual effects of nanostructure evolution and PT during severe plastic flow in various technological and natural processes. In conclusion, they may bring up economic strategies of producing nanocomposites and single-phase nanostructured materials with optimal properties.

Crystalline size↗
DOE OSTI2019

W/TaC/SiC sandwich stack for high temperature applications

High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC) system was examined and compared to the tungsten/silicon carbide (W/SiC) system. Interfacial reactions, surface morphology, and roughness evolutions on thermal annealing at 1000 °C were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the W/SiC system, WC, W 2 C and W 5 Si 3 phases were observed due to severe chemical reaction after 24 h annealing, which led to an inhomogeneous surface structure with several large craters and small pores, thereby increasing surface roughness greatly. On the other hand, there was no tungsten silicide and/or carbide formation upon annealing with a TaC diffusion barrier. The surface structure remained nearly unchanged, and small changes in surface roughness with annealing time, which could be due to the growth of W grains, were noted. Furthermore, both the as-deposited and the 24 h annealed W/TaC/SiC samples presented an excellent interfacial bonding with a dense uniform interface. The results indicate that TaC is a promising diffusion barrier in the W/SiC system for high temperature applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells

The growth of quaternary Ga 0.68 In 0.32 As 0.35 P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation, we fabricated 1 um-thick lattice-matched GaInAsP films grown on GaAs(001) for application to solar cells. In order to characterize the effect of the surface diffusion of adatoms on the material quality of alloys, the growth temperature and substrate miscut are varied. Transmission electron microscopy and two-dimensional in-situ multi-beam optical stress determine that growth temperatures of 650 degrees C and below enhance the formation of the CuPtB atomic ordering and suppress material decomposition, which is found to occur at the growth surface. The root-mean-square (RMS) roughness is reduced from 33.6 nm for 750 degrees C to 1.62 nm for 650 degrees C, determined by atomic force microscopy. Our initial investigations show that the RMS roughness can be further reduced using increased miscut angle, and substrates miscut toward (111)A, leading to an RMS roughness of 0.56 nm for the sample grown at 600 degrees C on GaAs miscut 6 degrees toward (111)A. Using these conditions, we fabricate an inverted hetero-junction 1.62 eV Ga 0.68 In 0.32 As 0.35 P 0.65 solar cell without an anti-reflection coating with a short-circuit current density, open-circuit voltage, fill factor, and efficiency of 12.23 mA/cm2, 1.12 V, 86.18%, and 11.80%, respectively.

14 SOLAR ENERGY↗
DOE OSTI2022

Effects of surface treatments on ABS mechanical properties from fused filament fabrication

This paper examines the influence of surface treatments on the mechanical properties of acrylonitrile butadiene styrene (ABS) samples printed by fused filament fabrication (FFF). Prior efforts have applied brushing, painting, solvent dipping, infiltration, and vapor smoothing as post-processing surface treatments to improve the mechanical properties of FFF components. Additionally, because FFF can produce components with undesirable surface roughness, mechanical abrasion, epoxy coating, and acetone treatment may increase tensile strength by decreasing stress concentrations. Ridged surface texture may provide desirable tribological or handling properties. Based on these opportunities, this paper investigates abrasive media blasting, epoxy coating, acetone immersion, and ridged texturing surface treatments on the tensile strength and other mechanical properties of FFF ABS samples. ASTM D638-14 Type-I samples were printed, treated on all sample sides, and tested. From tensile tests, the elastic modulus, tensile strength, and fracture strain for both the untreated and treated ABS samples were calculated. For each sample, the surface finish and fracture macromorphology were observed with optical microscopy and the roughness values for the surface finish were calculated from profilometer data. Furthermore, samples were submerged in water and weighed periodically to measure mass changes due to water absorption. From surface profilometry and optical miscopy data, mechanical media blasting, epoxy coating, and immersion in all concentrations of acetone decreased surface roughness. Overall, on average, grit blasting with large beads and epoxy coating led to 2.6% and 1.2% increases in tensile strength, respectively; immersion in 40% acetone led to a 1.9% increase in tensile strength while treatment in 60% and 80% acetone decreased tensile strength by 4.9% and 1.9%, respectively. The study concludes that only grit blasting with large beads, immersion in 60% acetone, and the ridged texture significantly affected the tensile strength.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Isomerization and Fragmentation of Cyclohexanone in a Heated Micro-Reactor

Here, the thermal decomposition of cyclohexanone (C 6 H 10 =O) has been studied in a set of flash-pyrolysis microreactors. Decomposition of the ketone was observed when dilute samples of C 6 H 10 =O were heated to 1200 K in a continuous flow microreactor. Pyrolysis products were detected and identified by tunable VUV photoionization mass spectroscopy and by photoionization appearance thresholds. Complementary product identification was provided by matrix infrared absorption spectroscopy. Pyrolysis pressures were roughly 100 Torr, and contact times with the microreactors were roughly 100 μs. Thermal cracking of cyclohexanone appeared to result from a variety of competing pathways, all of which open roughly simultaneously. Isomerization of cyclohexanone to the enol, cyclohexen-1-ol (C 6 H 9 OH), is followed by retro-Diels–Alder cleavage to CH 2 =CH 2 and CH 2 =C(OH)–CH=CH 2 . Further isomerization of CH 2 =C(OH)–CH=CH 2 to methyl vinyl ketone (CH 3 CO–CH=CH 2 , MVK) was also observed. Photoionization spectra identified both enols, C 6 H 9 OH and CH 2 =C(OH)–CH=CH 2 , and the ionization threshold of C 6 H 9 OH was measured to be 8.2 ± 0.1 eV. Coupled cluster electronic structure calculations were used to establish the energetics of MVK. The heats of formation of MVK and its enol were calculated to be Δ f H 298 (cis-CH 3 CO–CH=CH 2 ) = -26.1 ± 0.5 kcal mol –1 and Δ f H 298 (s-cis-1-CH 2 =C(OH)–CH=CH 2 ) = -13.7 ± 0.5 kcal mol –1 . The reaction enthalpy Δ rxn H 298 (C 6 H 10 =O → CH 2 =CH 2 + s-cis-1-CH 2 =C(OH)–CH=CH 2 ) is 53 ± 1 kcal mol –1 and Δ rxn H 298 (C 6 H 10 =O → CH 2 =CH 2 + cis-CH 3 CO–CH=CH 2 ) is 41 ± 1 kcal mol –1 . At 1200 K, the products of cyclohexanone pyrolysis were found to be C 6 H 9 OH, CH 2 =C(OH)–CH=CH 2 , MVK, CH 2 CHCH 2 , CO, CH 2 =C=O, CH 3 , CH 2 =C=CH 2 , CH 2 =CH–CH=CH 2 , CH 2 =CHCH 2 CH 3 , CH 2 =CH 2 , and HC≡CH.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Insights into Waterflooding in Hydrocarbon-Bearing Nanochannels of Varying Cross Sections from Mesoscopic Multiphase Flow Simulations

Waterflooding is one of the geotechnique used to recover fuel sources from nanoporous geological formations. The scientific understanding of the process that involves the multiphase flow of nanoconfined fluids, however, has lagged, mainly due to the complex nanopore geometries and chemical compositions. To enable benchmarked flow of nanoconfined fluids, the architected geomaterials, such as synthesized mesoporous silica with tunable pore shapes and surface chemical properties, are used for designing and conducting experiments and simulations. This work uses a modified many-body dissipative particle dynamics (mDPD) model with accurately calibrated parameters to perform parametric flow simulations for studying the influences of waterflooding driven power, pore shape, surface roughness, and surface wettability on the multiphase flow in heptane-saturated silica nanochannels. Remarkably, up to 80\% reduction in the effective permeability is found for water-driven heptane flow in a baseline 4.5 nm-wide slit channel, when compared with the Hagen–Poiseuille equation. In the 4.5 nm-wide channels with architected surface roughness, the flow rate is found either higher or lower than the baseline case, depending on the shape and size of cross-sections. High wettability of the solid surface to water is essential for achieving high recovery of heptane, regardless of surface roughness. When the solid surface is less wetting or non-wetting to water, the existence of an optimal waterflooding driven power is found to allow for the highest possible recovery. A detailed analysis on the evolution of the transient water-heptane interface in those nanochannels is presented to elucidate the underlying mechanisms that impact or dictate the multiphase flow behaviors.

58 GEOSCIENCES↗
DOE OSTI2020

Extreme Antiscaling Performance of Slippery Omniphobic Covalently Attached Liquids

Scale formation presents an enormous cost to the global economy. Classical nucleation theory dictates that to reduce the heterogeneous nucleation of scale, the surface should have low surface energy and be as smooth as possible. Past approaches have focused on lowering surface energy via the use of hydrophobic coatings and have created atomically smooth interfaces to eliminate nucleation sites, or both, via the infusion of low-surface-energy lubricants into rough superhydrophobic substrates. Although lubricant-based surfaces are promising candidates for antiscaling, lubricant drainage inhibits their utilization. Here, we develop methodologies to deposit slippery omniphobic covalently attached liquids (SOCAL) on arbitrary substrates. Similar to lubricant-based surfaces, SOCAL has ultralow roughness and surface energy, enabling low nucleation rates and eliminating the need to replenish the lubricant. To enable SOCAL coating on metals, we investigated the surface chemistry required to ensure high-quality functionalization as measured by ultralow contact angle hysteresis (<3°). Using a multilayer deposition approach, we first electrophoretically deposit (EPD) silicon dioxide (SiO 2 ) as an intermediate layer between the metallic substrate and SOCAL. The necessity of EPD SiO 2 is to smooth (<10 nm roughness) as well as to enable the proper surface chemistry for SOCAL bonding. To characterize antiscaling performance, we utilized calcium sulfate (CaSO 4 ) scale tests, showing a 20× reduction in scale deposition rate than untreated metallic substrates. Descaling tests revealed that SOCAL dramatically decreases scale adhesion, resulting in rapid removal of scale buildup. Furthermore, our work not only demonstrates a robust methodology for depositing antiscaling SOCAL coatings on metals but also develops design guidelines for the creation of antifouling coatings for alternate applications such as biofouling and high-temperature coking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)

Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to resolve and calls for a fundamental rethinking of the resist chemistry. Low-molecular-mass monodispersed metal-containing resists of high atom economy can provide not only very high resolution but also very low line-width roughness without sacrificing sensitivity. Here we describe a modular metal-containing resist platform (molecular mass <500 Da) where a molecular resist consists of just two components: a metal and a radical initiator bonded to it. This simple system not only is amenable to high-resolution electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) but also unites them mechanistically, giving a consolidated perspective of molecular and chemical processes happening during exposure. Irradiation of the resist leads to the production of secondary electrons that generate radicals in the initiator bonded to metal. This brings about an intramolecular rearrangement and causes solubility switch in the exposed resist. We demonstrate record 1.9–2.0 nm isolated patterns and 7 nm half-pitch dense line-space features over a large area using EBL. With EUVL, 12 nm half-pitch line-space features are shown at a dose of 68 mJ/cm 2 . In both of these patterning techniques, the line-width roughness was found to be ≤2 nm, a record low value for any resist platform, also leading to a low-performance trade-off metric, Z factor, of 0.6 × 10 –8 mJ·nm 3 . With the ultimate resolution limited by instrumental factors, potential patterning at the level of a unit cell can be envisaged, making low-molecular-mass resists best poised for angstrom-scale lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Connecting Pressure-Saturation and Relative Permeability Models to Fracture Properties: The Case of Capillary-Dominated Flow of Supercritical CO 2 and Brine

Fractures are potential pathways for subsurface fluids. In the context of geologic CO 2 sequestration, fractures could threaten the security of reservoirs since they are pathways for leakage. However, the constitutive equations describing the pressure-saturation and relative permeability-saturation, key inputs for flow modeling and prediction, are poorly understood for two-phase fracture flow at the field scale where each fracture might be an element of a complex fracture network or dual-porosity domain. This knowledge is required for the safe storage of CO 2 under potentially fractured caprocks. To address this, we numerically simulated two-phase viscous flow through horizontal heterogeneous fractures across a broad range of roughness and aperture correlation length. The numerical experiments, which solved the modified local cubic law, showed a weak to strong phase interference during the drainage process; that is, supercritical CO 2 displaces brine if the imposed pressure + local viscous force > local capillary force. The drainage process ended when no new brine cells can be further invaded by CO 2 . Afterward, we froze the saturation field for each individual phase and calculated the relative permeability by single-phase flow modeling. Thousands of simulated pressure-saturation and relative permeability curves enabled us to estimate and connect the parameters of the Van-Genuchten model and of the generalized ν-type model to fracture roughness and aperture correlation length. In conclusion, this empirical connection will be useful for assessing and predicting immiscible two-phase flow in horizontal rough fractures at the large scale.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Improving a Multilevel Turbulence Closure Model for a Shallow Lake in Comparison With Other 1-D Models

Lakes differ from lands in water availability, heat capacity, albedo, and roughness, which affect local surface-atmospheric interactions. This study modified a multilevel upper ocean model (UOM) for lake applications and evaluated its performance in Lake Taihu (China) with comprehensive measurements against three popular one-dimensional (1-D) lake models. These models were based on different concepts, including the self-similarity (FLake), the wind-driven eddy diffusion (LISSS), the k-ε turbulence closure (SIMSTRAT), and a simplified turbulence closure (UOM). The surface flux scheme in these models was unified to exclude the discrepancies in representing air-lake exchanges. All models in their default formulations presented obvious cold water temperature biases and largely underestimated the lake surface temperature (LST) diurnal range. For each model, these deficiencies were significantly reduced by incorporating new physics schemes or calibrated tunable parameters based on systematic sensitivity tests. The primary modifications for UOM included (1) a new scheme of decreased surface roughness lengths to better characterize the shallow lake, (2) a solar radiation penetration scheme with increased light extinction coefficient and surface absorption fraction to account for the high water turbidity, and (3) turbulent Prandtl number increased by a factor of 20 to reduce the turbulent vertical mixing. All other models were improved in these three aspects (roughness, extinction, and mixing) within their original formulations. Given these improvements, UOM showed superior performance to other models in capturing LST diurnal cycle and daily to seasonal variations, as well as summer-autumn vertical stratification changes. The new UOM is well suited for application in shallow lakes.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

The GFDL‐CM4X Climate Model Hierarchy, Part I: Model Description and Thermal Properties

We present the GFDL‐CM4X (Geophysical Fluid Dynamics Laboratory Climate Model version 4X) coupled climate model hierarchy. The primary application for CM4X is to investigate ocean and sea ice physics as part of a realistic coupled Earth climate model. CM4X utilizes an updated MOM6 (Modular Ocean Model version 6) ocean physics package relative to CM4.0, and there are two members of the hierarchy: one that uses a horizontal grid spacing of 0.25° (referred to as CM4X‐p25) and the other that uses a grid 0.125° (CM4X‐p125). CM4X also refines its atmospheric grid from the nominally 100 km (cubed sphere C96) of CM4.0–50 km (C192). Finally, CM4X simplifies the land model to allow for a more focused study of the role of ocean changes to global mean climate. CM4X‐p125 reaches a global ocean area mean heat flux imbalance of -0.02 W m -2 within $\mathcal{O}$ (150) years in a pre‐industrial simulation, and retains that thermally equilibrated state over the subsequent centuries. This 1850 thermal equilibrium is characterized by roughly 400 ZJ less ocean heat than present‐day, which corresponds to estimates for anthropogenic ocean heat uptake between 1870 and present‐day. CM4X‐p25 approaches its thermal equilibrium only after more than 1000 years, at which time its ocean has roughly 1100 ZJ more heat than its early 21st century ocean initial state. Furthermore, the root‐mean‐square sea surface temperature bias for historical simulations is roughly 20% smaller in CM4X‐p125 relative to CM4X‐p25 (and CM4.0). We offer the mesoscale dominance hypothesis for why CM4X‐p125 shows such favorable thermal equilibration properties.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Hardening in Au-Ag nanoboxes from stacking fault-dislocation interactions

Porous, nano-architected metals with dimensions down to ~10 nm are predicted to have extraordinarily high strength and stiffness per weight, but have been challenging to fabricate and test experimentally. Here, we use colloidal synthesis to make ~140 nm length and ~15 nm wall thickness hollow Au-Ag nanoboxes with smooth and rough surfaces. In situ scanning electron microscope and transmission electron microscope testing of the smooth and rough nanoboxes show them to yield at 130 ± 45 MPa and 96 ± 31 MPa respectively, with significant strain hardening. A higher strain hardening rate is seen in rough nanoboxes than smooth nanoboxes. Finite element modeling is used to show that the structure of the nanoboxes is not responsible for the hardening behavior suggesting that material mechanisms are the source of observed hardening. Molecular dynamics simulations indicate that hardening is a result of interactions between dislocations and the associated increase in dislocation density.

42 ENGINEERING↗
DOE OSTI2021

Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal

Abstract Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m –1 K –1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effects of Oxygen Modification on the Structural and Magnetic Properties of Highly Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films

Abstract La 0.7 Sr 0.3 MnO 3 , a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature ( T C ) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La 0.7 Sr 0.3 MnO 3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only ( 00 l ) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic T C and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with T C = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Diazirine-based photo-crosslinkers for defect free fabrication of solution processed organic light-emitting diodes

The fabrication of solution deposited OLEDs is fraught with difficulties, largely due to the interlayer mixing and surface erosion during sequential deposition of the layers. We demonstrate that these problems can be circumvented by using photopolymerizable diazirine-based cross-linker capable of converting soluble organic materials into highly cross-linked insoluble networks. 3-Trifluoromethyl(aryl)diazirines photolyze readily upon the 10–15 min exposure of 365 nm UV irradiation to generate carbenes, which react with polymers or small molecules via C–H bond insertion producing highly cross-linked materials. This photo-generated cross-linking does not require any catalyst, initiator or short-wavelength UV light and is performed at room temperature, releasing molecular nitrogen as the only byproduct. To show the cross-linked polymer layers do not display inter-layer mixing, we deposited red-emitting regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) over cross-linked (10% cross-linker) blue emitting dioctyl polyfluorene (PFO) layer. The overlaid layers showed clear and well-defined boundary with no interlayer mixing. The surface morphology of the solution deposited layers was investigated by AFM to show that the cross-linked layers exhibited significant decrease in surface roughness. This is also shown on the example of the hole transporting material 4,4'-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (NPB) which displayed roughness average to decrease from 6.4 nm to 1.0 nm. The effect of decreased surface roughness on the performance of phosphorescent OLEDs was investigated by fabricating devices with configuration of ITO/PEDOT:PSS/NPB:(0%/5%/10%) cross-linker/MCP:6% Ir(mppy) 3 /TPBI/CsF/Al. Furthermore, following the diazirine-mediated cross-linking, the OLEDs displayed a decrease in turn-on voltage from 3.8 V to 3.0 V along with a six-fold enhancement of external quantum efficiency (EQE max ) from 1.1% to 6.8% and maximum luminous efficiency increase from 3.8 cd A -1 to 22.9 cd A -1 . These results demonstrate that the simple diazirine mediated photo-cross-linking using mild conditions compatible with organic layers is a promising strategy for improving the performance of the solution-processed OLEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Carrier Lifetimes in Epitaxial Germanium-Tin/Al(In)As Heterostructures with Variable Tin Compositions

Group IV-based germanium-tin (Ge1-ySny) compositional materials have recently shown great promise for infrared detection, light emission and ultra-low power transistors. High carrier lifetimes are desirable for enhancing the detection limit and efficiency of photodetectors, low threshold current density in lasers, and low tunneling barrier height by lowering defects and dislocations at the heterointerface of a source and a channel. Here, carrier lifetimes in epitaxial germanium (Ge) and variable tin (Sn) compositional Ge1-ySny materials were experimentally determined on GaAs substrates using the contactless microwave photoconductive decay (u-PCD) technique at an excitation wavelength of 1500 nm. Sharp (2 x 2) reflection high energy electron diffraction patterns and low surface roughness were observed from the surface of the Ge0.97Sn0.03 epilayer. X-ray rocking curves from Ge0.97Sn0.03 and Ge0.94Sn0.06 layers demonstrated the pseudomorphic and lattice-matched growth on AlAs and In0.12Al0.88As buffers, respectively, further substantiated by reciprocal space maps and abrupt heterointerfaces evident from the presence of Pendellosung oscillations. High effective carrier lifetimes of 150 ns to 450 ns were measured for Ge1-ySny epilayers as a function of Sn composition, surface roughness, growth temperature, and layer thickness. The observed increase in the carrier lifetime with an increasing Ge layer thickness and a reducing surface roughness, by incorporating Sn, were explained. The enhancement of the carrier lifetime with an increasing Sn concentration was achieved by controlling the defects with lattice-matched Ge0.94Sn0.06/In0.12Al0.88As heterointerfaces or the pseudomorphic growth of Ge0.94Sn0.06 on GaAs. Therefore, our monolithic integration of variable Sn alloy compositional Ge1-ySny materials with high carrier lifetimes opens avenues to realize electronic and optoelectronic devices.

carrier lifetimes↗