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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Effect of defects on the kinetics of the phase transformation in a one-dimensional system: Modified Kolmogorov-Mehl-Johnson theory

The statistical Kolmogorov-Mehl-Johnson theory of solidification is generalized with allowance for the effect of obstacles creating delays for the propagation of new-phase boundaries, as applied to one-dimensional systems. An equation is derived to describe the process kinetics and is used to calculate the time dependence of the fraction of a transformed substance. The modification of the kinetics caused by changes in the obstacle density and the obstacle-induced delay time is studied. The theory can be applied to the extended contacts in large-scale integration circuits, biological macromolecules, and many other systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tungsten fragmentation in nuclear reactions induced by high-energy cosmic-ray protons

Tungsten fragmentation arising in nuclear reactions induced by cosmic-ray protons in space-vehicle electronics is considered. In modern technologies of integrated circuits featuring a three-dimensional layered architecture, tungsten is frequently used as a material for interlayer conducting connections. Within the preequilibrium model, tungsten-fragmentation features, including the cross sections for the elastic and inelastic scattering of protons of energy between 30 and 240 MeV; the yields of isotopes and isobars; their energy, charge, and mass distributions; and recoil energy spectra, are calculated on the basis of the TALYS and EMPIRE-II-19 codes. It is shown that tungsten fragmentation affects substantially forecasts of failures of space-vehicle electronics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Development of methods for calculating basic features of the nuclear contribution to single event upsets under the effect of protons of moderately high energy

As a continuation and a development of previous studies of our group that were devoted to the investigation of nuclear reactions induced by protons of moderately high energy (between 10 and 400 MeV) in silicon, aluminum, and tungsten atoms, the results obtained by exploring nuclear reactions on atoms of copper, which is among the most important components in materials for contact pads and pathways in modern and future ultralarge-scale integration circuits, especially in three-dimensional topology, are reported in the present article. The nuclear reactions in question lead to the formation of the mass and charge spectra of recoil nuclei ranging fromheavy target nuclei down to helium and hydrogen. The kineticenergy spectra of reaction products are calculated. The results of the calculations based on the procedure developed by our group are compared with the results of calculations and experiments performed by other authors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2018

Properties of ZnSe/Al{sub 2}O{sub 3} Nanostructures Obtained by RF Magnetron Sputtering

Experimental data for the synthesis of ZnSe/Al{sub 2}O{sub 3} nanostructures utilizing a technology widely used in integrated circuit (IC) production are reported. It has been shown that the refractive index and size of the coherent scattering domains grow, whereas the energy bandgap decreases, with an increase in ZnSe width. It has been supposed that samples with a ZnSe width of 9 Å contain a ZnSeO{sub 3} compound and/or ZnSe ⋅ Al{sub 2}O{sub 3} complex compound. Multilayer heterostructures with a ZnSe width more than 9 Å contain cubic ZnSe nanocrystallites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

The in-silico lab-on-a-chip: petascale and high-throughput simulations of microfluidics at cell resolution

We present simulations of blood and cancer cell separation in complex microfluidic channels with subcellular resolution, demonstrating unprecedented time to solution, performing at 65.5% of the available 39.4 PetaInstructions/s in the 18, 688 nodes of the Titan supercomputer. These simulations outperform by one to three orders of magnitude the current state of the art in terms of numbers of simulated cells and computational elements. The computational setup emulates the conditions and the geometric complexity of microfluidic experiments and our results reproduce the experimental findings. These simulations provide sub-micron resolution while accessing time scales relevant to engineering designs. We demonstrate an improvement of up to 45X over competing state-of-the-art solvers, thus establishing the frontiers of simulations by particle based methods. Our simulations redefine the role of computational science for the development of microfluidics –- a technology that is becoming as important to medicine as integrated circuits have been to computers.

Computer Science↗
DOE OSTI2025

SpacelyProject/spacely-docs

Spacely is an open-source framework for the post-silicon validation of analog, digital, and mixed-signal ASICs (Application-Specific Integrated Circuits) which maximizes the reuse of hardware and software, reducing the time taken to achieve meaningful test results. Spacely specifically addresses the needs of small, flexible ASIC design teams commonly found in academia or research institutions. Spacely was originally developed at Fermi National Accelerator Laboratory.

Quinn, Adam [Fermi National Accelerator Laboratory↗
DOE OSTI2020

Toward lower-diameter large-scale HPC and data center networks with co-packaged optics

We investigate the advantages of using co-packaged optics for building low-diameter, large-scale high-performance computing (HPC) and data center networks. The increased escape bandwidth offered by co-packaged optics can enable high-radix switch implementations of more than 150 switch ports, which can be combined with data rates of up to 400 Gb/s per port. From the network architecture perspective, the key benefits of using co-packaged optics in future fat-tree networks include (a) the ability to implement large-scale topologies of > <#comment/> 11 , 000 end points by eliminating the need for a third switching layer and (b) the ability to provide up to 4 × <#comment/> higher bisection bandwidth compared to existing solutions, reducing at the same time the number of required switch application-specific integrated circuits by > <#comment/> 80 % <#comment/> . From the network operation perspective, both reduced energy consumption and lower packet delays can be achieved since fewer hops are required; i.e., packets need to traverse fewer serializer/deserializer lanes and fewer switch buffers, which reduces the probability of contending with other packets and improves the tolerance of network congestion. The performance of the proposed architecture is evaluated via discrete-event simulations for a wide range of representative HPC synthetic-traffic cases that include both hotspot and non-hotspot scenarios. The simulation results suggest that co-packaged optics form a promising solution to keep up with bandwidth scaling in future networks, while the reduced number of switching layers can lead to significant mean packet delay improvements that start from 30% and reach up to 74% for high-load conditions.

Maniotis, Pavlos (ORCID:0000000244905253)↗
DOE OSTI2021

INTREPID program: technology and architecture for next-generation, energy-efficient, hyper-scale data centers [Invited]

The INTREPID program is developing power-efficient coherent optics for package-level integration with future switch integrated circuits as a path to realizing higher-radix switches for flatter networks. The link architecture is underpinned by coherent quadrature phase-shift keying (QPSK) polarization-multiplex transceivers at 200 Gb/s per λ <#comment/> , further enhanced with wavelength division multiplexing (WDM) to enable energy-efficient 800 or 1600 Gb/s inter-switch fiber connections. The technology is compatible with conventional three-level data center designs as well as a two-level data center design introduced here, which includes an added layer of passive, arrayed waveguide grating routers (AWGRs) or WDM circuit switches to further improve the cost, energy efficiency, and latency of the network.

Saleh, Adel A. M. (ORCID:0000000182451136)↗
DOE OSTI2014

Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.

42 ENGINEERING↗
DOE OSTI2020

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Real-time dynamic wavelength tuning and intensity modulation of metal-clad nanolasers

To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstrate in-situ dynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser’s emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.

Deka, Suruj S. (ORCID:0000000297812317)↗
DOE OSTI2020

Cryogenic C-band wavelength division multiplexing system using an AIM Photonics Foundry process design kit

Cryogenic environments make superconducting computing possible by reducing thermal noise, electrical resistance and heat dissipation. Heat generated by the electronics and thermal conductivity of electrical transmission lines to the outside world constitute two main sources of thermal load in such systems. As a result, higher data rates require additional transmission lines which come at an increasingly higher cooling power cost. Hybrid or monolithic integration of silicon photonics with the electronics can be the key to higher data rates and lower power costs in these systems. We present a 4-channel wavelength division multiplexing photonic integrated circuit (PIC) built from modulators in the AIM Photonics process development kit (PDK) that operate at 25 Gbps at room temperature and 10 Gbps at 40 K. We further demonstrate 2-channel operation for 20 Gbps aggregate data rate at 40 K using two different modulators/wavelengths, with the potential for higher aggregate bit rates by utilizing additional channels.

42 ENGINEERING↗
DOE OSTI2021

Characterization of suspended membrane waveguides towards a photonic atom trap integrated platform

We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platform, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 μ m span) to nearly 30 mW (125 μ m span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Broadband integrated polarization splitter and rotator using subwavelength grating claddings

We present a broadband integrated photonic polarization splitter and rotator (PSR) using adiabatically tapered coupled waveguides with subwavelength grating (SWG) claddings. The PSR adiabatically rotates and splits the fundamental transverse-magnetic (TM 0 ) input to the fundamental transverse-electric (TE 0 ) mode in the coupler waveguide, while passing the TE 0 input through the same waveguide. The SWGs work as an anisotropic metamaterial and facilitate modal conversions, making the PSR efficient and broadband. We rigorously present our design approaches in each section and show the SWG effect by comparing with and without the SWG claddings. The coupling coefficients in each segment explicitly show a stronger coupling effect when the SWGs are included, confirmed by the coupled-mode theory simulations. The full numerical simulation shows that the SWG-PSR operates at 1500–1750 nm (≈250 nm) wavelengths with an extinction ratio larger than 20 dB, confirmed by the experiment for the 1490–1590 nm range. The insertion losses are below 1.3 dB. Since our PSR is designed based on adiabatical mode evolution, the proposed PSR is expected to be tolerant to fabrication variations and should be broadly applicable to polarization management in photonic integrated circuits.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Scalable free-space photonic antennas in foundry SOI silicon photonic platforms

We present a flexible, scalable, and low-noise design scheme for coupling free-space light into a silicon-on-insulator (SOI) electronic-photonic integrated circuit. The proposed scheme utilizes arrays of grating couplers with compact, inverse-designed power combining networks to couple a distributed optical collection area to a single output waveguide, forming a photonic antenna. Fabrication density compliance is maintained regardless of the antenna size, and the collection area can be scaled while maintaining a fixed noise floor. Using experimental grating array antennas fabricated in the GF45CLO platform, we demonstrate up to a 6.7× increase in the signal-to-noise ratio (SNR) of a lens-less monolithic free-space photonic receiver using a 4×4 grating array.

Rollinson, John (ORCID:0000000157130832)↗
DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗
DOE OSTI2020

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗