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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)

A knowledge gap exists about the impact of variation in length and thickness of ferromagnetic(FM) electrodes on molecular spintronics devices’ ability to manifest molecular coupling impact. Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated materials and devices and investigating the fundamental science of organic spintronics. This paper reports our experi- mental observations providing the dramatic impact of variation in ferromagnetic electrode length and thickness on paramagnetic molecule-based MTJMSD. Room temperature transport studies were performed to investigate the effect of FM electrode thickness. On the other hand, magnetic force microscopy measurements were con- ducted to understand the effect of FM electrode length extending beyond the molecular junction area, i.e., the site where paramagnetic molecules bridged between two FM. In the strong molecular coupling regime, transport study suggested thickness variation caused ~1000 to million-fold differences in junction conductivity. MFM study revealed near-zero magnetic contrast for pillar-shaped MTJMSD without any extended FM electrode. However, MFM images showed a multitude of microscopic magnetic phases on cross junction shaped MTJMSD where FM electrodes extended beyond the junction area. To understand the intriguing experimental results, we conducted an in-depth theoretical study using Monte Carlo Simulation (MCS) approach. MCS study utilized a Heisenberg atomic model of cross junction shaped MTJMSD to gain insights about room temperature transport and MFM experimental observations of microscopic MTJMSD. To make this study applicable for a wide variety of MTJMSDs, we systematically studied the effect of variation in molecular coupling strength between magnetic molecules and ferromagnetic (FM) electrodes of various dimensions. Here, our theoretical results suggest 25 atoms thick FM electrode show very weak molecular coupling impact and of the same order of experimentally studied FM electrode dimensions showing weak effect. Also, MCS results agree with experimentally observed multiple magnetic phases on lengthy FM electrodes of an MTJMSD.

42 ENGINEERING↗
DOE OSTI2025

Intercalation-Engineered Out-of-Plane Polarized van der Waals Ferromagnetic Superlattice with Room-Temperature Néel-Type Skyrmions

Superlattices (SLs) based on two-dimensional (2D) van der Waals (vdW) materials, abbreviated as 2D-SLs, have garnered significant attention due to their customizable properties. 2D-SLs can be engineered by mechanical stacking or chemical intercalation to achieve diverse forms of symmetry breaking, resulting in exotic phenomena like the quantum anomalous Hall effect and topological magnetism. Hitherto, broken symmetries in 2D-SLs have been widely produced within lateral planes or three dimensions. However, symmetry breaking along the vertical direction, specifically as an out-of-plane one-dimensional (1D) polarized superlattice, has not yet been achieved. Here, in this paper, we report a so far unseen out-of-plane 1D polarized vdW ferromagnetic superlattice achieved through an approach of two-step intercalation and de-embedding of chromium (Cr)-based 2D vdW magnets. The off-centering polarization of both intrinsic and intercalated Cr atoms in this (1 × 1 × 2) superstructure breaks the mirror symmetry vertically, yielding a Dzyaloshinskii–Moriya interaction (DMI). This results in high-density Néel-type magnetic skyrmions over a broad temperature range. Notably, sub-100 nm Néel-type skyrmions at room temperature (RT) can be achieved by tuning the Cr intercalation ratio, marking the first binary compound RT Néel-type skyrmionic vdW magnet. Our work expands the 2D-SL family with a class of out-of-plane 1D polarized ferromagnetic superlattice with tunable topological magnetism.

1D polarized superlattice↗
DOE OSTI2023

Above-Room-Temperature Ferromagnetism in Thin van der Waals Flakes of Cobalt-Substituted Fe 5 GeTe 2

Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, in this paper, the study of exfoliated flakes of cobalt-substituted Fe 5 GeTe 2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin room-temperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature T c of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of T c of ~270 K in CFGT monolayers. Pathways toward further enhancing monolayer T c are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.

2D magnetism↗
DOE OSTI2013

Influence of rare earth ion (Y{sup 3+}) on the magnetic and dc electrical properties of high density nanocrystalline Mg-Cd ferrites

Graphical abstract: Display Omitted Highlights: ► XRD confirm biphasic nature. ► Grain and crystallite are reduced as compared to ceramic method. ► The resistivity and magnetization increases with Y{sup 3+} addition in Mg-Cd ferrites. ► Coercivity and saturation magnetization shows size dependent behavior. -- Abstract: The samples having general formula Mg{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) with 5% Y{sup 3+} addition were prepared by oxalate co-precipitation technique. The characterization was carried by XRD, SEM and FTIR techniques. The XRD confirms the cubic spinel structure with orthoferrite (YFe{sub 2}O{sub 3}) secondary phase. Average crystallite size and grain size lies in the range (28.86–32.66 nm and 0.37–0.69 μm). The grain size is calculated by linear intercept method and lies in the range of 0.37–0.69 μm. The FT-IR shows two absorption bands in the frequency range of 350–800 cm{sup −1}. The addition of Y{sup 3+} for Fe{sup 3+} forms a secondary phase on the grain boundaries and increases the saturation magnetization with respect to that of pure Mg-Cd ferrites. The saturation magnetization, magnetic moment and coercive field is found to increase with cadmium content up to x = 0.4, obeying Neel's two sublattice model and decrease thereafter showing existence of non-collinear spin interaction. The saturation magnetization and coercivity shows size dependent behavior. Y–K type ordering is present in all samples except x = 1. The DC electrical resistivity increases while the Curie temperature (T{sub c}) decreases, with increase in cadmium content. The DC resistivity of Y{sup 3+} added Mg-Cd ferrite is higher than that reported for pure samples and for ceramic method. Activation energy in paramagnetic region is higher than that in ferromagnetic region.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Symmetry-driven persistent spin texture for the two-dimensional nonsymmorphic CdTe and ZnTe crystal structures

In this paper, two nonsymmorphic two-dimensional structures of CdTe and ZnTe are modeled, and using state-of-the-art density functional theory with the group theory of solids, their symmetry-enforced electronic properties are studied. The in-plane ferroelectricity coupled with strong spin-orbit coupling induces a unidirectional out-of-plane Rashba spin-orbit field that can host a momentum-independent uniform spin configuration known as persistent spin texture (PST) at the Brillouin zone center. PST in these structures is found to be robust against external perturbations such as strain, structural distortion, and independent of layer thickness. These unprecedented intrinsic spin transport properties hold utmost importance in spintronics, as the experimental stringent condition of equal Rashba and Dresselhaus constants [Phys. Rev. Lett. 90, 146801 (2003)] is eliminated. The calculated persistent spin helix wavelength of <~5 nm paves the way for developing next-generation nanosized nonballistic spin field-effect transistors compared with micrometer-sized GaAs/AlGaAs quantum wells. Further, these materials exhibit finite spin Hall conductivity at the band edges and hence can be used in ferromagnet-free spin Hall transistors. Although CdTe and ZnTe systems have been widely studied for photocatalysis and solar cell applications over the past few decades, their potential application in spintronic devices has not been explored. Mono/few layers of CdTe and ZnTe synthesized from (110) facets of bulk zinc-blende crystals [Nat. Commun. 3, 1057 (2012)] satisfy all symmetry operations of the nonsymmorphic space group and hence can be considered ideal materials to verify our theoretical results experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dirac Magnons, Nodal Lines, and Nodal Plane in Elemental Gadolinium

In this report we investigate the magnetic excitations of elemental gadolinium (Gd) using inelastic neutron scattering, showing that Gd is a Dirac magnon material with nodal lines at K and nodal planes at half integer ℓ. We find an anisotropic intensity winding around the K-point Dirac magnon cone, which is interpreted to indicate Berry phase physics. Using linear spin wave theory calculations, we show the nodal lines have nontrivial Berry phases, and topological surface modes. We also discuss the origin of the nodal plane in terms of a screw-axis symmetry, and introduce a topological invariant characterizing its presence and effect on the scattering intensity. Together, these results indicate a highly nontrivial topology, which is generic to hexagonal close packed ferromagnets. We discuss potential implications for other such systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Strong band renormalization and emergent ferromagnetism induced by electron-antiferromagnetic-magnon coupling

The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron-based superconductors. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band structure are still lacking. Consequently, critical information on the EAIs, such as its strength and doping dependence, remains elusive. Here we directly observe that EAIs induce a kink structure in the band dispersion of Ba 1–x K x Mn 2 As 2 , and subsequently unveil several key characteristics of EAIs. We found that the coupling constant of EAIs can be as large as 5.4, and it shows strong doping dependence and temperature dependence, all in stark contrast to the behaviors of EPIs. The colossal renormalization of electron bands by EAIs enhances the density of states at Fermi energy, which is likely driving the emergent ferromagnetic state in Ba 1–x K x Mn 2 As 2 through a Stoner-like mechanism with mixed itinerant-local character. Our results expand the current knowledge of EAIs, which may facilitate the further understanding of many correlated materials where EAIs play a critical role.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Improving of the electrical and magnetic properties of BiFeO{sub 3} by doping with yttrium

Bismuth ferrite is one of the most promising multiferroic materials, and the main barriers for exploiting all of its specific properties are difficulties in obtaining pure, high resistive material with nanosized grains. Doping of BiFeO{sub 3} with different transition metals and rare earth elements is often used way for overcoming these obstacles. Yttrium doped bismuth ferrite, Bi{sub 1−x}Y{sub x}FeO{sub 3} (x = 0; 0.01; 0.03; 0.05; 0.1), was prepared by auto-combustion method. X-ray diffraction patterns and Raman results showed that partial phase transition from rhombohedral to orthorhombic structure took place at around 10 mol% of Y. Effect of Y doping on microstructure was studied from SEM micrographies, showing the reduction of grain size in doped samples. Electrical measurements showed continuous improvement of resistivity with Y doping, whereas the values of saturation and remnant polarizations exhibit maximums at around 5 mol% of Y. Yttrium doping also enhanced magnetic properties, leading to weak ferromagnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Magnetic properties of nanocrystalline KNbO{sub 3}

Newly synthesized undoped and iron-doped nanoscale powders of KNbO{sub 3} are investigated using magnetic resonance and static magnetization methods in order to determine how the crystal size and doping affect the structure of magnetic defects and material properties. Although the bulk crystals of KNbO{sub 3} are nonmagnetic, the undoped KNbO{sub 3} powder with average particle size of 80 nm exhibits magnetic properties. The ferromagnetic resonance signal and the magnetization curve registered on the powder are thoroughly analyzed. It is concluded that the appearance of the defect driven ferromagnetism in the undoped powder is due to the nano-size of the particles. This effect disappears in the iron-doped KNbO{sub 3} powder with particle sizes above 300 nm. In case of low doping (<1 mol. % Fe), a new electron paramagnetic resonance signal with g{sub eff} = 4.21 is found out in the KNbO{sub 3}:Fe powder. Such a signal has not been observed in the bulk crystals of KNbO{sub 3}:Fe. We suppose that this signal corresponds to individual paramagnetic Fe{sup 3+} ions having rhombic symmetry.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structural, Electronic, Optical, and Magnetic Properties of Fe{sub 3}Al Alloys

We have investigated the structural, optical, and magnetic properties of D0{sub 3} Fe{sub 3}Al alloys along with the electronic structure calculations. X-ray diffraction patterns confirm the single-phase cubic structure with a symmetry for the arc-melted samples. In the field dependence of magnetic data, ferromagnetic behavior is witnessed down to 2 K from room temperature. The electronic structure calculation corroborates the experimental observation of ferromagnetism in this alloy. Further, optical conductivity data in excellent agreement with the electronic structure calculations confirmed that electronic transitions are predominant by the 3d states of Fe.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Presence of Induced Weak Ferromagnetism in Fe-Substituted YFe x Cr 1–x O 3 Crystalline Compounds

Fe-substituted YFe x Cr 1–x O 3 crystalline compounds show promising magnetic and multiferroic properties. Here we report the synthesis and characterization of several compositions from this series. Using the autocombustion route, various compositions (x = 0.25, 0.50, 0.6, 0.75, 0.9, and 1) were synthesized as high-quality crystalline powders. In order to obtain microscopic and atomic information about their structure and magnetism, characterization was performed using room temperature X-ray diffraction and energy dispersion analysis as well as temperature-dependent neutron diffraction, magnetometry, and 57 Fe Mössbauer spectrometry. Rietveld analysis of the diffraction data revealed a crystallite size of 84 (8) nm for YFeO 3 , while energy dispersion analysis indicated compositions close to the nominal compositions. The magnetic results suggested an enhancement of the weak ferromagnetism for the YFeO 3 phase due to two contributions. First, a high magnetocrystalline anisotropy was associated with the crystalline character that favored a unique high canting angle of the antiferromagnetic phase (13°), as indicated by the neutron diffraction analysis. This was also evidenced by the high magnetic hysteresis curves up to 90 kOe by a remarkable high critical coercivity value of 46.7 kOe at room temperature. Second, the Dzyaloshinskii–Moriya interactions between homogenous and heterogeneous magnetic pairs resulted from the inhomogeneous distribution of Fe 3+ and Cr 3+ ions, as indicated by 57 Fe Mössbauer studies. Together, these results point to new methods of controlling the magnetic properties of these materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Half-Metallic and Half-Semiconductor Gaps in Cr-Based Chalcogenides: DFT + U Calculations

Using full-potential linear-augmented plane waves plus local orbitals (FP-LAPW) method, within the generalized gradient approximation (GGA) and GGA + U (Hubbard Coulomb onsite correction) as well as the modified Becke-Johnson approach (mBJ-GGA and mBJ-GGA + U), we have carried out a systematic investigation of the structural, electronic, and magnetic properties of CrS, CrSe, and CrTe compounds in two competing phases: the zinc-blende (ZB) and wurtzite (WZ) structures. We obtained half-metallic (HM) gaps of 1.35 (2.32), 1.65 (2.49), and 1.52 (1.80) for the CrS, CrSe, and CrTe compounds, respectively, in the ZB phase within the GGA + U (mBJ-GGA + U) approach. The HM gaps are 1.78, 2.11, and 1.53 for CrS, CrSe, and CrTe compounds, respectively, in the WZ phase using the GGA + U. Notably, the CrSe and CrTe using the mBJ-GGA + U approach are a half-semiconductor (HSC) in the WZ phase. The HSC gaps are 0.94 and 0.25 eV for CrSe and CrTe compounds, respectively, while CrS has a HM gap of 2.30 eV. We observed a HSC-to-HM transition for the CrSe and CrTe crystal structures on application of strain. The CrS, CrSe, and CrTe compounds have a total magnetic moment of 4.0 µ{sub B} per formula unit with the magnetization predominantly from the Cr ion. The main features observed from the density of states and strain evolution should motivate further experimental exploration on the possible application of the CrS, CrSe, and CrTe compounds for spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

FMR and Magnetic Studies of RF-Sputtered Mn-Zn Ferrite Thin Films

The Manganese–Zinc ferrite (MZF) thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at 10 mTorr of argon gas pressure. The FMR and magnetization measurement were carried out to understand magnetic properties of the as-deposited and annealed MZF films. The resonance field (H{sub r}) of the FMR spectra shifts towards higher magnetic field when angle between applied field and thin film plane is changed from 0 to 90° indicating the existence of uniaxial anisotropy in the film. Whereas, H{sub r} shifts towards lower magnetic field with decrease in temperature of the film. This is due to ferrimagnetic ordering in the films at low temperatures. The magnetization versus field (M-H) plots reveal the soft ferrimagnetic behavior of the films. The post-deposition annealing of the film leads to increase in crystallite size with more uniform film surface and dense columnar growth compared to the as-deposited film. The increase in magnetization and decreases in H{sub r}-values compared to that of as-deposited film are observed for annealed film. The optical band gap of the film is also found to increase with annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Magnetic and Magnetotransport Characteristics of Cr-Substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Thin Films Grown by Magnetron Sputtering

Highly oriented Cr-substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Heusler thin films having thickness ~ 400 nm were deposited by Ultrahigh vacuum dc magnetron sputtering on MgO (100) substrates. At room temperature, the films exhibit a mixture of dominant L2{sub 1} cubic austenite phase, as revealed by the intense (002) and (004) peaks, along with small fraction of the orthorhombic–martensitic phase. Surface morphology of the thin films showed distribution of Cr-rich and Cr-deficit regions together with patterned and aligned magnetic domains, thus bringing out the inherent room temperature ferromagnetism of the film. At temperatures above the Curie temperature, T{sub C} ~ 321 K, the magnetic behaviour of the films is seen to follow the Curie law rather than the Curie–Weiss law. Ferromagnetic to antiferromagnetic transition appears at T{sub N} ~ 247 K, which gives rise to exchange bias at low temperatures due to the coexistence of the two magnetic orders. This phase coexistence also leads to the formation of a spin glass state deep into the martensitic region. The film exhibits metal-like nature at high temperature and semiconductor-like behaviour with the lowering of temperature. A reentrant metallic state is observed at T ≤ 38 K during cooling that persists up to ≤ 62 K in warming cycle. The hysteresis in the ρ–T curve spread over a very wide temperature range confirms the magnetic phase coexistence in the martensitic state in the present thin films. The magnetoresistance (MR) first increases (2.4% at 300 K and H = 50 kOe) with temperature and maximizes to around ~ 3.25% at T = 150 K and then starts decreasing. Its value in the glassy state is very small. This shows that a magnetic liquid like state is more conducive to larger MR.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

In-situ TOF neutron diffraction studies of cyclic softening in superelasticity of a NiFeGaCo shape memory alloy

Real-time in-situ neutron diffraction was conducted during uniaxial cycling compression of a Ni 49.3 Fe 18 Ga 27 Co 5.7 shape memory alloy to explore the mechanism on its superelasticity at room temperature, which was manifested by the almost recoverable large strains and the apparent cyclic softening. Based on the Rietveld refinements, the real-time evolution of volume fraction of martensite was in-situ monitored, indicating the incremental amount of residual martensite with increasing load cycles. Real-time changes in intensities and lattice strains of { hkl } reflections for individual phase were obtained through fitting individual peaks, which reveal the quantitative information on phase transformation kinetics as a function of grain orientation and stress/strain partitioning. Moreover, a large compressive residual stress was evidenced in the parent phase, which should be balanced by the residual martensite after the second unloading cycle. As a result, the large compressive residual stress found in the parent austenite phase may account for the cyclic effect on critical stress required for triggering the martensitic transformation in the subsequent loading.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. Here, these epitaxial MAFO thin films exhibit a Gilbert damping parameter of ~0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ~0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Distinct spin–lattice and spin–phonon interactions in monolayer magnetic CrI 3

In this study, we apply the density-functional theory to study various phases (including non-magnetic (NM), anti-ferromagnetic (AFM), and ferromagnetic (FM)) in monolayer magnetic chromium triiodide (CrI 3 ), a recently fabricated 2D magnetic material. It is found that: (1) the introduction of magnetism in monolayer CrI 3 gives rise to metal-to-semiconductor transition; (2) the electronic band topologies as well as the nature of direct and indirect band gaps in either AFM or FM phases exhibit delicate dependence on the magnetic ordering and spin–orbit coupling; and (3) the phonon modes involving Cr atoms are particularly sensitive to the magnetic ordering, highlighting distinct spin–lattice and spin–phonon coupling in this magnet. First-principles simulations of the Raman spectra demonstrate that both frequencies and intensities of the Raman peaks strongly depend on the magnetic ordering. The polarization dependent A 1g modes at 77 cm -1 and 130 cm -1 along with the E g mode at about 50 cm -1 in the FM phase may offer a useful fingerprint to characterize this material. Lastly, our results not only provide a detailed guiding map for experimental characterization of CrI 3 , but also reveal how the evolution of magnetism can be tracked by its lattice dynamics and Raman response.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Giant spin torque in hybrids with anisotropic p-d exchange interaction

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10{sup 4} A/cm{sup 2} in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗