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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Commensuration effects on skyrmion Hall angle and drag for manipulation of skyrmions on two-dimensional periodic substrates

Here, we examine the dynamics of an individually driven skyrmion moving through a background lattice of skyrmions coupled to a 2D periodic substrate as we vary the ratio of the number of skyrmions to the number of pinning sites across commensurate and incommensurate conditions. As the skyrmion density increases, the skyrmion Hall angle is nonmonotonic, dropping to low or zero values in commensurate states and rising to an enhanced value in incommensurate states. Under commensuration, the driven skyrmion is channeled by a symmetry direction of the pinning array and exhibits an increased velocity. At fillings for which the skyrmion Hall angle is zero, the velocity has a narrow band noise signature, while for incommensurate fillings, the skyrmion motion is disordered and the velocity noise is broad band. Under commensurate conditions, multi-step depinning transitions appear and the skyrmion Hall angle is zero at low drives but becomes finite at higher drives, while at incommensurate fillings there is only a single depinning transition. As the gyrotropic component of the skyrmion dynamics, called the Magnus force, increases, peaks in the velocity that appear in commensurate regimes cross over to dips, and new types of directional locking effects can arise in which the skyrmion travels along other symmetry directions of the background lattice. At large Magnus forces, and particularly at commensurate fillings, the driven skyrmion can experience a velocity boost in which the skyrmion moves faster than the applied drive due to the alignment of the Magnus-induced velocity with the driving direction. In some cases, an increase of the Magnus force can produce regimes of enhanced pinning when the skyrmion is forced to move along a nonsymmetry direction of the periodic pinning array. This is in contrast to systems with random pinning, where increasing the Magnus force generally reduces the pinning effect. We demonstrate these dynamics for both square and triangular substrates and map out the different regimes as a function of filling fraction, pinning force, and the strength of the Magnus force in a series of dynamic phase diagrams.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental evaluation of direct current magnetron sputtered and high-power impulse magnetron sputtered Cr coatings on SiC for light water reactor applications

Two types of physical vapor deposition Cr coatings were deposited on chemical vapor deposited SiC coupons using conventional direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) to mitigate the corrosion of SiC, an advanced fuel and structural material in light water nuclear reactor cores. Coating microstructure was characterized using scanning electron microscopy and scanning transmission election microscopy. X-ray diffraction analysis was conducted for phase identification and qualitative analysis of residual stresses. The mechanical integrity of the coatings was evaluated using scratch testing, micro-indentation, and nano-indentation tests. Additionally, the microstructure of the DCMS coating consisted of fine columnar grains with nanoscale intercolumnar channels, while the HiPIMS microstructure was denser and free of any columnar defects. The DCMS coating showed a small tensile residual stress, while the HiPIMS coating was under compressive stress. Both types of coatings showed good mechanical integrity in terms of ductility and adhesion to the substrate. Corrosion performance of the coatings was assessed with a 30-day high temperature water autoclave test. Both types of coatings formed a protective Cr 2 O 3 surface layer 20-30 nm thick during the autoclave test. In the DCMS coating, the columnar defects provided permeation pathways for water penetration resulting in oxide formation in the intercolumnar regions in the interior of the coating. Overall, both types of Cr coatings offer promise for the mitigation of hydrothermal corrosion of SiC in light water reactor operating environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Glass Additive and Subtractive Manufacturing of a Fiber Optic Rotary Encoder for Downhole Pressure Sensing

This article presents a fiber optic rotary encoder-based pressure sensor for downhole applications. The rotary encoder, which is composed of an encoding pad and an all-glass optical fiber sensing head, converts the rotation angles of a pressure transducer to digital codes. The optical fiber only serves as the telemetry channel to directly transmit the data in digital format such that the environmental temperature influence and the long-time drift are minimized. The glass additive and subtractive manufacturing (ASM) techniques are used to embed the multichannel optical fibers into a bulk-fused silica glass substrate. Because the fused silica glass shares a similar material property to the optical fiber (e.g., thermal expansion coefficient), the optical fiber sensing head is well sealed and fixed even at an elevated temperature. The picosecond laser blackening technique is used to fabricate the high reflectivity contrast encoding pad with high accuracy. Here, the proposed pressure sensor was manufactured and experimentally verified to have a signal-to-noise ratio (SNR) of 23 dB and a linear pressure response with a root-mean-square error (RMSE) of 0.37. During the 400-h 250 °C long-term stability test, there was no digital code variation. In addition, a mathematical model to study the relationships between the sensor’s performances and design parameters was established. According to the model, a 12-bit encoder (0.02% pressure sensitivity) can be achieved with a radius of 20 mm.

02 PETROLEUM↗
DOE OSTI2020

Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO 4 Thin-Film Solid Electrolytes

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO 4 phase. Here, the rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 ($1\bar{21}0$)||Si (100) and β-LiAlSiO 4 ($10\bar{10}$)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10 –7 S/cm in the [$1\bar{21}0$] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO 4 , the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Role of structural defects in mediating disordering processes at irradiated epitaxial Fe 3 O 4 / Cr 2 O 3 interfaces

Disordering processes in oxide materials are complicated by the presence of interfaces, which can serve as either point defect sinks or accumulation sites; the response depends on factors such as interfacial structure, chemistry, and termination. Here, we have characterized the disordering of epitaxial Fe 3 O 4 (111) / Cr 2 O 3 (0001) thin film heterostructures after 400 keV Ar 2+ radiation at room temperature. The density of misfit dislocations in both the Fe 3 O 4 overlayer and Cr 2 O 3 buffer layer is varied by changing the thickness of Cr 2 O 3 to be pseudomorphically strained to the Al 2 O 3 (0001) substrate (5 nm thick) or partially relaxed (20 nm thick), as confirmed by Bragg filtering analysis of scanning transmission electron microscopy images. In both cases, irradiation leads to damage accumulation on the Fe 3 O 4 side of the heterointerface, as shown by Rutherford backscattering spectrometry measurements in the channeling geometry. However, the interface with more misfit dislocations exhibits disordering at a faster rate than the less-defective interface. Likewise, layer-resolved electron energy loss spectroscopy reveals interfacial reduction of Fe after irradiation at the more defective interface. Intermixing of Cr across the interface is observed by atom probe tomography, which is likely facilitated by the generation of Cr interstitials in Cr 2 O 3 under irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dynamical commensuration effect in a two-dimensional Yukawa solid modulated by periodic substrates

Transverse depinning dynamics of a periodic-square-substrate modulated two-dimensional dusty plasma solid driven by a constant force in the longitudinal direction are investigated using Langevin dynamical simulations. When the commensuration ratio (the number ratio of particles to substrate potential wells) is increased, there is a nonmonotonic variation of the critical transverse depinning force, and the local maxima and minima of the critical transverse depinning force precisely correspond to the dynamical commensurate and incommensurate conditions, respectively. Here, the dynamical commensuration effect is also clearly visible in the stable one-dimensional channel particle trajectories and the highly ordered structure, while both the particle trajectories and the structure are more disordered under the incommensurate conditions. The nonmonotonic variation of the critical transverse depinning force is attributed to the stability of the lattice structure at specific commensuration ratios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

The KIPM Detector Consortium

Kinetic Inductance Phonon-Mediated (KIPM) Detectors, microcalorimeters that leverage kinetic inductance detectors (KIDs) to read out phonon signals from the device substrate, are an attractive architecture for low-threshold rare-event searches due to their large response to small changes in quasiparticle density and native multiplexability, enabling scalability. We have established a consortium comprising university and national lab groups dedicated to advancing the state-of-the-art in these detectors, with the ultimate goal of designing a detector with a kg-scale target mass and sub-eV threshold on energy deposited in the substrate, enabling searches for both light dark matter and low-energy neutrino interactions. This consortium brings together experts in KID design, phonon and quasiparticle dynamics, and noise modeling, along with specialized fabrication facilities, test platforms, and unique calibration capabilities. Recently, our consortium has demonstrated a sensor resolution (i.e., resolution in the quasiparticle channel) of 2.1 eV, the current record for such devices. The current focus of the consortium is modeling and improving the phonon collection efficiency and implementing low-Tc superconductors, both of which serve to improve the overall energy resolution and threshold of the detectors. In this talk, I will provide an overview of the consortium and its capabilities, highlight some recent results from its member groups, and discuss near term plans toward reaching the ultimate goal.

Temples, Dylan J. [Fermilab]↗
DOE OSTI2020

Self-grown NiCuO x hybrids on a porous NiCuC substrate as an HER cathode in alkaline solution

Electrocatalysts converted directly from the substrates hold the key to achieve high catalytic activity and durability due to their high bonding strength, intimate electronic contact, and tunable phase composition. Herein, an electrically conductive porous NiCuC substrate was adopted to develop a multi-porous NiCuO x /NiCuC hydrogen evolution reaction (HER) catalyst using a one-step oxidation method in this research. The NiCuO x hybrids were characterized as three typical layers: an outer layer with NiCuO 2 solid solution phase, a partially oxidized intermediate layer, and an inner layer with limited stable oxygen content. Here, the NiCuO x /NiCuC possesses abundant Ni(II)–Cu(II) sites to accelerate the Volmer step via the electrostatic effect with OH – , numerous metallic NiCu sites to facilitate the H adsorption, and highly accessible channels to promote the Heyrovsky step during HER catalysis. As a result, high electrocatalytic performance was obtained with an overpotential of 116 mV at a current density of 10 mA cm –2 in 1.0 M potassium hydroxide, and a stable catalytic performance during the HER process for more than 24 h.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs

The poor thermal properties of Aluminum–Gallium Nitride (AlGaN) channel High Electron Mobility Transistors (HEMTs) on sapphire limit the device’s maximum switching frequency due to high channel temperatures. Extracting the correct thermal time constants can provide guidelines for the device’s safe frequency operation. This study experimentally quantifies the impact of pulse width and duty cycle on the transient thermal dynamics of multi-finger AlGaN channel HEMTs. In most transient thermal metrology, lock-in averaging approaches are leveraged to increase signal-to-noise ratio and measure the device’s relative temperature rise. Assuming no heat accumulation, the temperature rise is used to quantify the device’s thermal resistance under continued pulsed biasing. For devices grown on sapphire substrates, however, heat accumulation leads to elevated reference temperatures and causes the differential measurement to underestimate the peak temperature. This study demonstrates the capability of transient Gate Resistance Thermometry (tGRT) to measure the absolute temperature, which is required to precisely evaluate the device’s thermal resistance. When an absolute temperature measurement is not feasible (such as thermoreflectance imaging), a solution is proposed to derive the peak temperature under pulsed biasing based on the differential temperature under pulsing and the steady-state thermal resistance (which is typically easier to obtain). Finally, additional tGRT (without averaging) is performed to demonstrate the temperature-dependent thermal time constants required to minimize heat accumulation effects.

Field effect transistors↗
DOE OSTI2026

Measuring quasiparticle dynamics for particle impact reconstruction in a superconducting qubit chip

Quasiparticle poisoning following particle impacts poses a significant challenge to the development of fault-tolerant superconducting quantum computers, as a sudden excess of quasiparticles can simultaneously degrade the coherence of multiple qubits across large device arrays. In this work, we present a statistical analysis that models the time evolution of radiation-induced qubit energy relaxation through quasiparticle density dynamics. This study provides insight into quasiparticle loss processes by distinguishing between recombination and trapping decay channels and assessing their respective impact on qubit performance. We precisely measure quasiparticle recombination in multiple transmon qubits and uncover an unexpected dependence of qubit relaxation dynamics on deposited energy. By linking correlated relaxation events across qubits to ballistic phonon propagation, we introduce a statistical localization approach to extract the energy deposited in the substrate, which is in good agreement with Monte Carlo simulation. This work establishes the quantitative framework for using an arbitrary subset of superconducting transmon qubits in a QPU as energy-resolving witness particle detectors.

Celi, E. [Northwestern U.]↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
DOE OSTI2020

Lipid sponge droplets as programmable synthetic organelles

Living cells segregate molecules and reactions in various subcellular compartments known as organelles. Spatial organization is likely essential for expanding the biochemical functions of synthetic reaction systems, including artificial cells. Many studies have attempted to mimic organelle functions using lamellar membrane-bound vesicles. However, vesicles typically suffer from highly limited transport across the membranes and an inability to mimic the dense membrane networks typically found in organelles such as the endoplasmic reticulum. Here, we describe programmable synthetic organelles based on highly stable nonlamellar sponge phase droplets that spontaneously assemble from a single-chain galactolipid and nonionic detergents. Due to their nanoporous structure, lipid sponge droplets readily exchange materials with the surrounding environment. In addition, the sponge phase contains a dense network of lipid bilayers and nanometric aqueous channels, which allows different classes of molecules to partition based on their size, polarity, and specific binding motifs. The sequestration of biologically relevant macromolecules can be programmed by the addition of suitably functionalized amphiphiles to the droplets. We demonstrate that droplets can harbor functional soluble and transmembrane proteins, allowing for the colocalization and concentration of enzymes and substrates to enhance reaction rates. Droplets protect bound proteins from proteases, and these interactions can be engineered to be reversible and optically controlled. Our results show that lipid sponge droplets permit the facile integration of membrane-rich environments and self-assembling spatial organization with biochemical reaction systems.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Zeolitic imidazolate frameworks (ZIFs) are a subset of metal–organic frameworks with more than 200 characterized crystalline and amorphous networks made of divalent transition metal centres (for example, Zn 2+ and Co 2+ ) linked by imidazolate linkers. ZIF thin films have been intensively pursued, motivated by the desire to prepare membranes for selective gas and liquid separations. To achieve membranes with high throughput, as in ångström-scale biological channels with nanometre-scale path lengths, ZIF films with the minimum possible thickness—down to just one unit cell—are highly desired. However, the state-of-the-art methods yield membranes where ZIF films have thickness exceeding 50 nm. Here we report a crystallization method from ultradilute precursor mixtures, which exploits registry with the underlying crystalline substrate, yielding (within minutes) crystalline ZIF films with thickness down to that of a single structural building unit (2 nm). The film crystallized on graphene has a rigid aperture made of a six-membered zinc imidazolate coordination ring, enabling high-permselective H 2 separation performance. The method reported here will probably accelerate the development of two-dimensional metal–organic framework films for efficient membrane separation.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗
DOE OSTI2025

Decoupling electrode kinetics to elucidate reaction mechanisms in alkaline water electrolysis

Alkaline water electrolysis (AWE) presents key advantages, including reduced material costs, enhanced operational stability, and compatibility with non-precious metal catalysts, positioning it as a scalable route for hydrogen production. In this study, we introduce a minimally invasive single-cell configuration incorporating a reference electrode via diaphragm extension to form an internal ion channel. This setup, combined with an interfaced potentiostat and auxiliary electrometer, enables real-time, independent monitoring of anode and cathode behavior, offering high-resolution electrochemical diagnostics. While it is well established that the hydrogen evolution reaction (HER) exhibits sluggish kinetics in alkaline media, our study reveals that this limitation persists even in practical AWE systems where nickel-based substrates are used as electrodes. This observation is supported by both experimental data and voltage breakdown modeling. Arrhenius-type analysis reveals that localized electric fields induced by catalysts shift the reaction kinetics from classical Butler–Volmer behavior toward a Marcus-like regime, where interfacial molecular dynamics and bimolecular charge transfer dominate. We propose a semi-empirical model and a surficial reaction mechanism to describe these dynamics. This work underscores the critical need for cathode innovation and provides a rational framework for designing advanced catalysts and electrode architectures to optimize AWE performance.

08 HYDROGEN↗
DOE OSTI2020

Patterned electrode catalyst

Disclosed herein are embodiments of a patterned electrode comprising regions of catalyst and segregating regions that separate the regions of catalyst. The segregating regions may be regions of non-catalytic material. The catalyst regions may correspond to the channels of a flow field. The electrode provides improved fuel cell performance, particularly at high current densities. The electrode may be for all suitable applications, such as in a membrane electrode assembly and/or a fuel cell. Also disclosed is a method for making the patterned electrode. The method may comprise using masks to apply the catalyst and non-catalyst material to a substrate.

Macauley, Natalia↗
DOE OSTI2024

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.

Physics↗