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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Sensor Integrated Metal Dielectric Filters for Solar-Blind Silicon Ultraviolet Detectors

A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

Hoenk, Michael E.↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

A novel, steerable, low-energy proton source for detector characterization

We report on the conversion of the Manitoba II mass spectrometer into a versatile low-energy proton beam facility. This infrastructure is adaptable to any detector-under-test (DUT), and has proven itself effective with the characterization of silicon detectors used in subatomic beyond-the-Standard-Model (BSM) searches, namely the Nab experiment. A pencil beam of mono-energetic protons can be produced in a range from 25 keV to 35 keV, achieving a beam current of ~1 x 10 -18 A. Electrostatic steering plates were constructed to direct the Gaussian-profile proton beam over a 117 mm diameter area-of-interest with full-width at half-maxima (FWHM) ranging from 0.6 mm to 1.26 mm. This work discusses the modifications and subsequent tests to confirm the beam specifications met the demands of the aforementioned detectors.

Fundamental neutron physics↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Measured gain suppression in FBK LGADs with different active thicknesses

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.

Particle tracking detectors↗
NASA NTRS1972

Infrared response measurements on radiation-damaged Si/Li/ detectors.

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Sher, A. H.↗
NASA NTRS1989

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Mahan, John E.↗
NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗
NASA NTRS1971

Design and development of solid state detector for SCADS

Solid state detector technology was applied to the fabrication and testing of cadmium sulfide and silicon narrow slit detector/preamplifier subassemblies. Fabrication of the silicon detector and the cadmium sulfide detectors was accomplished by utilizing cadmium sulfide cells and silicon cells. Fabrication of the preamplifiers for both silicon and cadmium sulfide slit type detectors was also carried out. The design of these preamplifiers was adjusted to ascertain that the limiting noise source of the detector/preamplifier subassembly is the detector and the input cable.

Source record↗
DOE OSTI2020

A new waveform analysis technique to extract good energy and position resolution from a dual-axis duo-lateral position-sensitive detector

The dual-axis duo-lateral position-sensitive silicon detector was developed to detect charged particles with high quality position and energy resolution. When these detectors were used with conventional signal processing electronics, an empirically determined correction was used to improve energy resolution. In this work, the waveforms from the detector after preamplification are studied in detail to investigate position information contained in the waveforms. A 7.22 MeV/nucleon alpha particle beam was impinged directly on a masked dual-axis duo-lateral detector. Data obtained using a 228 Th alpha particle source was also used. Here, by studying the waveform characteristics that give rise to the position-dependent distortions, a new summed trigger analysis method has been developed to significantly improve linearity in position reconstruction without sacrificing energy resolution.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS2004

Performance of the Zero Degree Detector

The Zero Degree Detector (ZDD) is a large area pixelated silicon detector that measures secondary particle angular distributions from heavy ion interactions. The ZDD is part of the instrumentation being used in an ongoing measurement program to measure fragmentation cross-sections of heavy nuclei and evaluate the relative effectives of novel materials for spacecraft shielding. The initial performance of the ZDD has been assessed using the primary heavy ions measured. We report here on the ZDD's design, capabilities and signal calibration using heavy ions.

Christl, Mark J.↗
DOE OSTI2025

Silicon wafer fracture stress for tracking sensors in particle physics experiments

For the construction of the ATLAS Inner Tracker strip detector, silicon strip sensor modules are glued directly onto carbon fibre support structures using a soft silicone gel. During tests at temperatures below -35°C, several of the sensors were found to crack due to a mismatch in coefficients of thermal expansion between polyimide circuit boards with copper metal layers (glued onto the sensor) and the silicon sensor itself. While module assembly procedures were developed to minimise variations between modules, cold tests showed a wide range of temperatures at which supposedly comparable modules failed. The observed variance (fracture temperatures between -35°C and -70°C) for supposedly comparable modules suggests an undetected variation between modules suspected to be intrinsic to the silicon wafer itself. Therefore, a test programme was developed to investigate the fracture stress of representative sensor wafer cutoffs. This paper presents results for the fracture stress of silicon sensors used in detector modules.

Detector design and construction technologies and ↗
DOE OSTI2020

New segmented target for studies of neutron unbound systems

The study of neutron-unbound systems using invariant mass spectroscopy is often performed using low-intensity radioactive ion beams. Low reaction yields can be countered by using thick targets but at the expense of larger uncertainties in the reconstructed invariant mass. In this work, we present a new segmented target designed to address this trade-off. It is composed of three mm thick passive beryllium targets interleaved between four thick position sensitive silicon detectors. In the first experiment to use this new system the half-life of two-neutron unbound was measured to be (stat) (syst) ps, which agrees with a previous measurement made by the MoNA Collaboration.

47 OTHER INSTRUMENTATION↗