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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

A Two-Dimensional Linear Bicharacteristic FDTD Method

The linear bicharacteristic scheme (LBS) was originally developed to improve unsteady solutions in computational acoustics and aeroacoustics. The LBS has previously been extended to treat lossy materials for one-dimensional problems. It is a classical leapfrog algorithm, but is combined with upwind bias in the spatial derivatives. This approach preserves the time-reversibility of the leapfrog algorithm, which results in no dissipation, and it permits more flexibility by the ability to adopt a characteristic based method. The use of characteristic variables allows the LBS to include the Perfectly Matched Layer boundary condition with no added storage or complexity. The LBS offers a central storage approach with lower dispersion than the Yee algorithm, plus it generalizes much easier to nonuniform grids. It has previously been applied to two and three-dimensional free-space electromagnetic propagation and scattering problems. This paper extends the LBS to the two-dimensional case. Results are presented for point source radiation problems, and the FDTD algorithm is chosen as a convenient reference for comparison.

Beggs, John H.↗
NASA NTRS2001

A Linear Bicharacteristic FDTD Method

The linear bicharacteristic scheme (LBS) was originally developed to improve unsteady solutions in computational acoustics and aeroacoustics [1]-[7]. It is a classical leapfrog algorithm, but is combined with upwind bias in the spatial derivatives. This approach preserves the time-reversibility of the leapfrog algorithm, which results in no dissipation, and it permits more flexibility by the ability to adopt a characteristic based method. The use of characteristic variables allows the LBS to treat the outer computational boundaries naturally using the exact compatibility equations. The LBS offers a central storage approach with lower dispersion than the Yee algorithm, plus it generalizes much easier to nonuniform grids. It has previously been applied to two and three-dimensional freespace electromagnetic propagation and scattering problems [3], [6], [7]. This paper extends the LBS to model lossy dielectric and magnetic materials. Results are presented for several one-dimensional model problems, and the FDTD algorithm is chosen as a convenient reference for comparison.

Beggs, John H.↗
NASA NTRS2010

Stacked Corrugated Horn Rings

This Brief describes a method of machining and assembly when the depth of corrugations far exceeds the width and conventional machining is not practical. The horn is divided into easily machined, individual rings with shoulders to control the depth. In this specific instance, each of the corrugations is identical in profile, and only differs in diameter and outer profile. The horn is segmented into rings that are cut with an interference fit (zero clearance with all machining errors biased toward contact). The interference faces can be cut with a reverse taper to increase the holding strength of the joint. The taper is a compromise between the interference fit and the clearance of the two faces during assembly. Each internal ring is dipped in liquid nitrogen, then nested in the previous, larger ring. The ring is rotated in the nest until the temperature of the two parts equalizes and the pieces lock together. The resulting assay is stable, strong, and has an internal finish that cannot be achieved through other methods.

Sosnowski, John B.↗
NASA NTRS2004

Brush/Fin Thermal Interfaces

Brush/fin thermal interfaces are being developed to increase heat-transfer efficiency and thereby enhance the thermal management of orbital replaceable units (ORUs) of electronic and other equipment aboard the International Space Station. Brush/fin thermal interfaces could also be used to increase heat-transfer efficiency in terrestrial electronic and power systems. In a typical application according to conventional practice, a replaceable heat-generating unit includes a mounting surface with black-anodized metal fins that mesh with the matching fins of a heat sink or radiator on which the unit is mounted. The fins do not contact each other, but transfer heat via radiation exchange. A brush/fin interface also includes intermeshing fins, the difference being that the gaps between the fins are filled with brushes made of carbon or other fibers. The fibers span the gap between intermeshed fins, allowing heat transfer by conduction through the fibers. The fibers are attached to the metal surfaces as velvet-like coats in the manner of the carbon fiber brush heat exchangers described in the preceding article. The fiber brushes provide both mechanical compliance and thermal contact, thereby ensuring low contact thermal resistance. A certain amount of force is required to intermesh the fins due to sliding friction of the brush s fiber tips against the fins. This force increases linearly with penetration distance, reaching ~1 psi (~6.9 kPa) for full 2-in. (5.1 cm) penetration for the conventional radiant fin interface. Removal forces can be greater due to fiber buckling upon reversing the sliding direction. This buckling force can be greatly reduced by biasing the fibers at an angle perpendicularly to the sliding direction. Means of containing potentially harmful carbon fiber debris, which is electrically conductive, have been developed. Small prototype brush/fin thermal interfaces have been tested and found to exhibit temperature drops about onesixth of that of conventional meshing-fin thermal interface, when fabricated as a retrofit. In this case, conduction through the long, thin metal fins themselves becomes a thermal bottleneck. Further improvement could be made by prescribing aluminum fins to be shorter and thicker than those of the conventional meshing-fin thermal interfaces; the choice of height and thickness would be optimized to obtain greater overall thermal conductance, lower weight, and lower cost.

Knowles, Timothy R.↗
NASA NTRS2007

Calibration Test Set for a Phase-Comparison Digital Tracker

An apparatus that generates four signals at a frequency of 7.1 GHz having precisely controlled relative phases and equal amplitudes has been designed and built. This apparatus is intended mainly for use in computer-controlled automated calibration and testing of a phase-comparison digital tracker (PCDT) that measures the relative phases of replicas of the same X-band signal received by four antenna elements in an array. (The relative direction of incidence of the signal on the array is then computed from the relative phases.) The present apparatus can also be used to generate precisely phased signals for steering a beam transmitted from a phased antenna array. The apparatus (see figure) includes a 7.1-GHz signal generator, the output of which is fed to a four-way splitter. Each of the four splitter outputs is attenuated by 10 dB and fed as input to a vector modulator, wherein DC bias voltages are used to control the in-phase (I) and quadrature (Q) signal components. The bias voltages are generated by digital-to-analog- converter circuits on a control board that receives its digital control input from a computer running a LabVIEW program. The outputs of the vector modulators are further attenuated by 10 dB, then presented at high-grade radio-frequency connectors. The attenuation reduces the effects of changing mismatch and reflections. The apparatus was calibrated in a process in which the bias voltages were first stepped through all possible IQ settings. Then in a reverse interpolation performed by use of MATLAB software, a lookup table containing 3,600 IQ settings, representing equal amplitude and phase increments of 0.1 , was created for each vector modulator. During operation of the apparatus, these lookup tables are used in calibrating the PCDT.

Boas, Amy↗
NASA NTRS2012

Plasma Actuators for Turbomachinery Flow Control

This report is Part I of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. The period of performance was January 1, 2007 to December 31, 2010. This report includes the project summary, a list of publications and reprints of the publications that appeared in archival journals. Part II of the final report includes a Ph.D. dissertation and is published separately as NASA/CR-2012-2172655. The research performed under this project was focused on the operation of surface dielectric barrier discharge (DBD) devices driven by high voltage, nanosecond scale pulses plus constant or time varying bias voltages. The main interest was in momentum production and the range of voltages applied eliminated significant heating effects. The approach was experimental supplemented by computational modeling. All the experiments were conducted at Princeton University. The project provided comprehensive understanding of the associated physical phenomena. Limitations on the performance of the devices for the generation of high velocity surface jets were established and various means for overcoming those limitations were proposed and tested. The major limitations included the maximum velocity limit of the jet due to electrical breakdown in air and across the dielectric, the occurrence of backward breakdown during the short pulse causing reverse thrust, the buildup of surface charge in the dielectric offsetting the forward driving potential of the bias voltage, and the interaction of the surface jet with the surface through viscous losses. It was also noted that the best performance occurred when the nanosecond pulse and the bias voltage were of opposite sign. Solutions include the development of partially conducting surface coatings, the development of a semiconductor diode inlaid surface material to suppress the backward breakdown. Extension to long discharge channels was studied and a new ozone imaging method developed for more quantitative determination of surface jet properties.

Miles, Richard, B↗
NASA NTRS1980

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

Three tasks were undertaken to investigate reliability attributes of terrestrial solar cells: (1) a study of the electrical behavior of cells in the second (reverse) quadrant; (2) the accelerated stress testing of three new state-of-the-art cells; and (3) the continued bias-temperature testing of four block 2 type silicon cells at 78 C and 135 C. Electrical characteristics measured in the second quadrant were determined to be a function of the cell's thermal behavior with breakdown depending on the initiation of localized heating. This implied that high breakdown cells may be more fault tolerant when forced to operate in the second quadrant, a result contrary to conventional thinking. The accelerated stress tests used in the first (power) quadrant were bias-temperature, bias-temperature-humidity, temperature-humidity, thermal shock, and thermal cycle. The new type cells measured included an EFG cell, a polycrystalline cell, and a Czochralski cell. Significant differences in the response to the various tests were observed between cell types. A microprocessed controlled, short interval solar cell tester was designed and construction initiated on a prototype.

Lathrop, J. W.↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗
NASA NTRS2021

Climate model projections from the Scenario Model Intercomparison Project (ScenarioMIP) of CMIP6

The Scenario Model Intercomparison Project (ScenarioMIP) defines and coordinates the main set of future climate projections, based on concentration-driven simulations, within the Coupled Model Intercomparison Project phase 6 (CMIP6). This paper presents a range of its outcomes by synthesizing results from the participating global coupled Earth system models. We limit our scope to the analysis of strictly geophysical outcomes: mainly global averages and spatial patterns of change for surface air temperature and precipitation. We also compare CMIP6 projections to CMIP5 results, especially for those scenarios that were designed to provide continuity across the CMIP phases, at the same time highlighting important differences in forcing composition, as well as in results. The range of future temperature and precipitation changes by the end of the century (2081–2100) encompassing the Tier 1 experiments based on the Shared Socioeconomic Pathway (SSP) scenarios (SSP1-2.6, SSP2-4.5, SSP3-7.0 and SSP5-8.5) and SSP1-1.9 spans a larger range of outcomes compared to CMIP5, due to higher warming (by close to 1.5 °C) reached at the upper end of the 5 %–95 % envelope of the highest scenario (SSP5-8.5). This is due to both the wider range of radiative forcing that the new scenarios cover and the higher climate sensitivities in some of the new models compared to their CMIP5 predecessors. Spatial patterns of change for temperature and precipitation averaged over models and scenarios have familiar features, and an analysis of their variations confirms model structural differences to be the dominant source of uncertainty. Models also differ with respect to the size and evolution of internal variability as measured by individual models' initial condition ensemble spreads, according to a set of initial condition ensemble simulations available under SSP3-7.0. These experiments suggest a tendency for internal variability to decrease along the course of the century in this scenario, a result that will benefit from further analysis over a larger set of models. Benefits of mitigation, all else being equal in terms of societal drivers, appear clearly when comparing scenarios developed under the same SSP but to which different degrees of mitigation have been applied. It is also found that a mild overshoot in temperature of a few decades around mid-century, as represented in SSP5-3.4OS, does not affect the end outcome of temperature and precipitation changes by 2100, which return to the same levels as those reached by the gradually increasing SSP4-3.4 (not erasing the possibility, however, that other aspects of the system may not be as easily reversible). Central estimates of the time at which the ensemble means of the different scenarios reach a given warming level might be biased by the inclusion of models that have shown faster warming in the historical period than the observed. Those estimates show all scenarios reaching 1.5 °C of warming compared to the 1850–1900 baseline in the second half of the current decade, with the time span between slow and fast warming covering between 20 and 27 years from present. The warming level of 2 °C of warming is reached as early as 2039 by the ensemble mean under SSP5-8.5 but as late as the mid-2060s under SSP1-2.6. The highest warming level considered (5 °C) is reached by the ensemble mean only under SSP5-8.5 and not until the mid-2090s.d-2090s.

Scenario Model Intercomparison Project (ScenarioMI↗
NASA NTRS2004

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from ~680 mV to ~960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

Ringel, S. A.↗
NASA NTRS1979

Control of forebody three-dimensional flow separations

Some experiments involving the development of the turbulent symmetric vortex flow about the lee side of a 5 deg semiangle conical forebody at high relative incidence are discussed. The cone was immersed in a Mach 0.6 airstream at a Reynolds number of 13.5 million based on the 1.4 - m axial length of the cone. Novel means of controlling the degree of asymmetry using blowing very close to the nose were investigated. Small amounts of air injected normally or tangentially to the cone surface, but on one side of the leeward meridian and beneath the vortex farthest from the wall, were effective in biasing the asymmetry. With this reorientation of the forebody vortices, the amplitude of the side force could be reduced to the point where its direction was reversed. This phenomenon could be obtained either by changing the blowing rate at constant incidence or by changing incidence at constant blowing rate. Normal injection was more effective than tangential injection. An organized and stable flow structure emerged with the jet vortices positioned above the forebody vortices.

Peake, D. J.↗
NASA NTRS1979

Control of forebody three-dimensional flow separations

The development of the turbulent symmetric and asymmetric vortex flow about the lee side of a 5 deg semiangle conical forebody at high relative incidence was investigated. The cone was immersed in a Mach 0.6 airstream at a Reynolds number of 13.5 x 10 to the 6th power based on the 1.4 m axial length of the cone. Small amounts of air injected normally or tangentially to the cone surface, but on one side of the leeward meridian and beneath the vortex farthest from the wall, were effective in biasing the asymmetry. With this reorientation of the forebody vortices, the amplitude of the side force could be reduced to the point where its direction was reversed. This phenomenon was obtained either by changing the blowing rate at constant incidence or by changing incidence at constant blowing rate. Normal injection appeared more effective than tangential injection. The contrarotating vortices in the penetrating jet flow were of opposite hand to the rotational directions of the forebody vortices. A distinctively organized and stable flow structure emerged with the jet vortices positioned above the forebody vortices.

Peake, D. J.↗
NASA NTRS2001

Modeling of Kink-Shaped Carbon-Nanotube Schottky Diode with Gate Bias Modulation

A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.

Yamada, Toshishige↗
NASA NTRS1968

Power consumption in acoustic amplifiers under conditions of maximum stable gain

Comparison is made of the power consumed and the acoustic amplification realized when a dc bias field is placed across a piezoelectric semiconductor and adjusted to amplify a microwave acoustic signal to the point where the forward gain is just equal to the reverse attenuation. This represents the maximum possible gain condition.

Johnson, V. R.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS1993

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Neudeck, Philip G.↗