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Results for “resistivity measurements”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Measurement of Transverse Resistance for Stacks of Non-insulated REBCO Tapes

Transverse resistance among adjacent conductors is a key parameter to calculate AC losses in superconducting cables with non-insulated conductors. The transverse pressure insert (TPI) previously developed and used at Fermilab was modified to measure transverse resistance of stacks made of non-insulated REBCO tapes as a function of transverse pressure at liquid nitrogen temperature. Pressure up to 322 MPa was applied with a hydraulic cylinder. A small current up to 10 A was flown in the stack sample through REBCO tape leads spliced above and below the stack. The latter had a bending radius larger than 6 mm to prevent the critical current degradation in REBCO leads. The voltage was measured just outside the compressed area. Stack samples included stacks of bare 4-mm wide REBCO tapes, as well as REBCO tapes alternated with 4-mm wide stainless-steel ribbons of 40 μm and 30 μm of thickness. We herein present the results of these transverse resistance measurements. Results show a stronger dependence on pressure for smaller pressure vs. larger ones. Also, of the two components of contact resistance, i.e. contact and bulk, the latter was negligible.

Tamagnini, E. [Turin Polytechnic]↗
NASA NTRS1980

Apparatus for measuring semiconductor device resistance

A test structure is described for enabling the accurate measurement of the resistance characteristics of a semiconductor material and includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the resistance encountered by currents passed between the terminals. A pair of terminals includes a first terminal extending in a closed path, such as a circle, around a second terminal, so that all currents flowing between the terminals flow along a region of known width and length. Two or more pairs of concentric terminals can be utilized, wherein the ratio of radii of each pair of terminals is the same as the ratio for all other pairs of terminals, to facilitate the calculation of the contact resistance between each terminal and the semiconductor surface, as well as the calculation of the resistance of the semiconductor material apart from the effect of the terminal to semiconductor contact resistances.

Matzen, W. J.↗
DOE OSTI2023

Anomalous superconducting diode effect in a polar superconductor

A superconductor with broken time-reversal and inversion symmetry may exhibit nonreciprocal charge transport, including a nonreciprocal critical current, also known as superconducting diode effect. Here, we report an intrinsic superconducting diode effect in a polar strontium titanate film. Differential resistance measurements reveal a superconducting state whose depairing current is polarity dependent. There is, however, no measurable deviation from Ohmic behavior, implying that this state does not arise from a bulk magnetochiral anisotropy. In the entire measurement range, the only deviation from linearity in the differential resistance is on the edge of the superconducting transition at high magnetic fields, likely due to the motion of flux vortices. Furthermore, the magnitude of the effect is preserved even when the in-plane magnetic field is oriented parallel to the current, indicating that this effect truly does not originate from a bulk magnetochiral anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1984

Highly photoconducting O2-doped CdS films deposited by spray pyrolysis

CdS films have been prepared by spraying in air solutions of thiourea with either cadmium chloride or cadmium acetate with varying mole ratio and substrate temperature, and subsequently heat treating in oxygen. Substrates included both bare glass or sapphire and transparent conducting oxide-coated sapphire for electrical measurements lateral and transverse to the CdS plane, respectively. Dark resistances of over 10 to the 14th ohms and light-to-dark conductivities of up to 10 to the 7th were obtained using uncoated substrates. The use of Cd(C2H3O2)2 in place of CdCl2 greatly increased the speed of response although with some sacrifice in photoconductivity. Deposition of CdS on ITO-coated surfaces led to greatly reduced dark resistances for the case of CdCl2, but not Cd(C2H3O2)2, presumably due to HCl reaction with the ITO coating in the course of spraying with the former. Ion microprobe analysis detected indium within the CdS films exhibiting low dark resistance. Measurements of the dark and light conductivities at temperatures down to 77 K are given as are the response times for unetched and HCl-etched surfaces.

Richards, D.↗
NASA NTRS1989

Effect of heat-treatment temperature of vapor-grown graphite fibers. I - Properties of their bromine intercalation compounds

Vapor-grown graphite fibers were heat treated at 2000, 2200, 2400, 2600, 2800, and 3000 C, brominated at room temperature for two days, and then characterized by X-ray diffraction analysis, differential scanning calorimetry, and resistivity measurements. Fibers greater than 13 microns in diameter had low resistivities (50 microohms or less) irrespective of the heat treatment temperature. An analysis of the results obtained suggests that resistivities below 6 microohms cannot be achieved through a further reduction in defect level unless the amount of bromine is increased.

Gaier, James R.↗
DOE OSTI2026

Development of in situ thickness sensor for vapor diffused Nb3Sn films

Fermilab is one of the leaders in development of vapor diffused Nb3Sn films inside niobium cavities. This material has a higher critical temperature (Tc) than niobium, enabling cavity operation at 4.2 K. This higher operational temperature significantly reduces the infrastructure required for cooling compared to 2 K systems, making superconducting radio-frequency (SRF) technology more accessible. Current deposition methods have relied on iterative testing to determine nominal film thickness, a process that can be time-consuming and imprecise. To address this, we are developing a sensor to measure the thickness of Nb3Sn thin film in situ during vapor diffusion. Our design involves the resistance measurement of a thin film of niobium. During coating, the change in resistance reflects the conversion of the film to Nb3Sn, which allows simple integration with the current furnace infrastructure. This sensor would allow real time measurement of the thickness, allowing for increased precision in future depositions.

Howard, K. [Unlisted] (ORCID:0000000325613308)↗
DOE OSTI2022

Helical spin ordering in room-temperature metallic antiferromagnet Fe 3 Ga 4

Metallic Fe 3 Ga 4 displays a complex magnetic phase diagram that supports an intermediate antiferromagnetic (AFM) helical spin structure (HSS) state at room temperature which lies between two ferromagnetic (FM) phases. Here, magnetic measurements along the three crystallographic axes were performed in order to develop a model for the temperature and field dependence of the HSS state. These results show that the AFM state is a helically ordered spiral propagating along the c-axis with the magnetic moments rotating in the ab-plane. Under applied magnetic field, the AFM state exhibits a metamagnetic transition to conical ordering before entering a fully field-polarized FM state at high fields. The conical ordering in the AFM state is anisotropic even within the ab-plane and may gives rise to Berry phase effects in transport measurements. Metallic conductivity from density of states computations was confirmed through resistivity measurements and no anomalous behavior was observed through the various magnetic transitions.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Automated Mercury Dilatometer

Task of reading and recording indications of mercury dilatometer simplified by automatic system. Volume change of sample under test converted into electrical signal. Device modified by addition of resistance wire to mercury column. Height of column read indirectly by measuring resistance between terminals. Signal suitable for strip-chart recording or other processing.

Hong, S. D.↗
NASA NTRS2005

Nano-engineered Multiwall Carbon Nanotube-copper Composite Thermal Interface Material for Efficient Heat Conduction

Efforts in integrated circuit (IC) packaging technologies have recently been focused on management of increasing heat density associated with high frequency and high density circuit designs. While current flip-chip package designs can accommodate relatively high amounts of heat density, new materials need to be developed to manage thermal effects of next-generation integrated circuits. Multiwall carbon nanotubes (MWNT) have been shown to significantly enhance thermal conduction in the axial direction and thus can be considered to be a candidate for future thermal interface materials by facilitating efficient thermal transport. This work focuses on fabrication and characterization of a robust MWNT-copper composite material as an element in IC package designs. We show that using vertically aligned MWNT arrays reduces interfacial thermal resistance by increasing conduction surface area, and furthermore, the embedded copper acts as a lateral heat spreader to efficiently disperse heat, a necessary function for packaging materials. In addition, we demonstrate reusability of the material, and the absence of residue on the contacting material, both novel features of the MWNT-copper composite that are not found in most state-of-the-art thermal interface materials. Electrochemical methods such as metal deposition and etch are discussed for the creation of the MWNT-Cu composite, detailing issues and observations with using such methods. We show that precise engineering of the composite surface affects the ability of this material to act as an efficient thermal interface material. A thermal contact resistance measurement has been designed to obtain a value of thermal contact resistance for a variety of different thermal contact materials.

Ngo, Quoc↗
NASA NTRS1990

Millimeter-wave detection using resonant tunnelling diodes

A lattice-matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter-wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and frequency. A tangential signal sensitivity of -37 dBm (1 MHz amplifier bandwidth) with a corresponding video resistance of 350 ohms at 40 GHz has been measured. These results appear to be the first millimeter-wave tangential signal sensitivity and video resistance results for a resonant tunnelling diode.

Mehdi, I.↗
DOE OSTI2026

Reactive Oxygen Ion Beam-Induced Deposition for Concurrent Purification of Platinum Nanostructures

Oxygen-focused ion beam induced deposition (O-FIBID) enables the direct-write fabrication of Pt nanostructures while simultaneously enhancing purity concurrently through reactive oxygen–deposit interactions. By systematically varying the dwell time, accelerating voltage, and precursor pressure, the Pt content and conductivity can be controlled. Under optimum conditions, the Pt content reached 63 at.%. Across the dwell-time range used for resistivity measurements, the Pt content increased from 20 to 33 at.%, while the resistivity decreased from 2.9 × 10 4 μΩ·cm to 1.2 × 10 3 μΩ·cm, which is consistent with enhanced percolation through Pt grains and the lower intrinsic resistivity of the purer Pt deposit. The simulation results support a purification mechanism driven by the beam-induced activation of implanted oxygen balanced against the preferential sputtering of Pt. These results demonstrate O-FIBID as a viable method for the nanoscale direct write of conductive Pt without post-processing, and some deviations from conventional FIBID wisdom are observed. These results serve as a foundation for exploring nascent, reactive focused ion beam-induced deposition processes.

deposit purification↗
NASA NTRS1983

Surface acoustic wave/silicon monolithic sensor/processor

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Kowel, S. T.↗
NASA NTRS1986

Conductimetric determination of decomposition of silicate melts

A description of a procedure is given to detect decomposition of silicate systems in the liquid state by conductivity measurements. Onset of decomposition can be determined from the temperature curves of resistances measured on two pairs of electrodes, one above the other. Degree of decomposition can be estimated from temperature and concentration dependency of conductivity of phase boundaries. This procedure was tested with systems PbO-B2O3 and PbO-B2O3-SiO2.

Kroeger, C.↗
DOE OSTI2020

On negative induced polarization in frequency domain measurements

SUMMARY Induced polarization (IP) has been widely used to non-invasively characterize electrical conduction and polarization in the subsurface resulting from an applied electric field. Earth materials exhibit a lossy capacitance defined by a negative intrinsic phase in frequency-domain IP (FDIP) or a positive intrinsic chargeability in time-domain IP (TDIP). However, error-free positive apparent phase or negative apparent chargeability (i.e. negative IP effects) can occur in IP measurements over heterogeneous media. While negative IP effects in TDIP data sets have been discussed, no studies have addressed this topic in detail for FDIP measurements. We describe theory and numerical modelling to explain the origin of negative IP effects in FDIP measurements. A positive apparent phase may occur when a relatively high polarizability feature falls into negative sensitivity zones of complex resistivity measurements. The polarity of the apparent phase is determined by the distribution of subsurface intrinsic phase and resistivity, with the resistivity impacting the apparent phase polarity via its control on the sensitivity distribution. A physical explanation for the occurrence of positive apparent phase data is provided by an electric circuit model representing a four-electrode measurement. We also show that the apparent phase polarity will be frequency dependent when resistivity changes significantly with frequency (i.e. in the presence of significant IP effects). Consequently, negative IP effects manifest themselves in the shape of apparent phase spectra recorded with multifrequency (spectral IP) data sets. Our results imply that positive apparent phase measurements should be anticipated and should be retained during inversion and interpretation of single frequency and spectral IP data sets.

Geochemistry & Geophysics↗
DOE OSTI2026

Development of in situ thickness sensor for vapor diffused Nb3Sn films

Fermilab is one of the leaders in development of vapor diffused Nb3Sn films inside niobium cavities. This material has a higher critical temperature (Tc) than niobium, enabling cavity operation at 4.2 K. This higher operational temperature significantly reduces the infrastructure required for cooling compared to 2 K systems, making superconducting radio-frequency (SRF) technology more accessible. Current deposition methods have relied on iterative testing to determine nominal film thickness, a process that can be time-consuming and imprecise. To address this, we are developing a sensor to measure the thickness of Nb3Sn thin film in situ during vapor diffusion. Our design involves a four-point resistance measurement of a thin film of niobium, inside the coating region. During coating, the change in resistance reflects the conversion of the film from Nb to Nb3Sn, which allows simple integration with the current furnace infrastructure. This sensor would allow real time measurement of the Nb3Sn film thickness, allowing for increased precision in future depositions for cavity applications.

Howard, K. [Chicago U.] (ORCID:0000000325613308)↗
NASA NTRS1976

Silicon ribbon growth by a capillary action shaping technique

The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%.

Schwuttke, G. H.↗
DOE OSTI2025

Pressure-Induced Phase Transitions in Bilayer La 3 Ni 2 O 7

La 3 Ni 2 O 7 differs from expectations in part because at ambient pressure, it exists in two polymorphs: an unconventional crystal structure with alternating layers of single- and triple-layered nickel−oxygen octahedra (i.e., La 2 NiO 4 plus La 4 Ni 3 O 10 , with the so-called 1313 crystal structure) and a classical double-layer Ruddlesden−Popper phase (i.e., La 3 Ni 2 O 7 , with the so-called 2222 crystal structure, which dominates at high pressure). In this study, we report the pressure-dependent structural and electrical resistive properties of single crystals of the classical double-layered La 3 Ni 2 O 7 , grown at slightly elevated pressure using the floating-zone method. Structural characterization under pressures up to 15.4 GPa reveals a gradual transition from orthorhombic to tetragonal symmetry that is completed at 12−14 GPa. Additionally, we present pressure and field-dependent electrical resistance measurements up to 27.4 GPa, from which we construct a phase diagram. Although a resistive transition at 80 K is observed at high pressures, the resistive hallmarks of superconductivity are not.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗