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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optimizing the position resolution of a Z-stack microchannel plate resistive anode detector for low intensity signals

A method for achieving good position resolution of low-intensity electron signals using a microchannel plate resistive anode detector is demonstrated. Electron events at a rate of 7 counts s{sup −1} are detected using a Z-stack microchannel plate. The dependence of position resolution on both the distance and the potential difference between the microchannel plate and resistive anode is investigated. Using standard commercial electronics, a measured position resolution of 170 μm (FWHM) is obtained, which corresponds to an intrinsic resolution of 157 μm (FWHM)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Toroidal modeling of anisotropic thermal transport and energetic particle effects on stability of resistive plasma resistive wall mode

Effects of anisotropic thermal transport on the linear stability of the resistive plasma resistive wall mode (RPRWM) are investigated by the magnetohydrodynamic-kinetic hybrid code MARS-K [Liu et al., Phys. Plasmas 15, 112503 (2008)], including the kinetic contribution from energetic particles (EPs). It is found that thermal transport can further stabilize the RPRWM in the presence of drift kinetic contributions from EPs. This is different from the fluid model, which always predicts destabilization of the mode by thermal transport. Furthermore, the thermal transport effect is found to amplify the role played by an adiabatic term, associated with the radial distribution of EPs’ birth energy, in modifying the mode stability as well as the mode eigenfunction. The shape of the equilibrium profiles of EPs, in particular that of the temperature, is also found to strongly affect the mode stabilization. This profile effect is more pronounced in the absence of thermal transport. MARS-K computations show that the stabilizing effect by thermal transport is more likely to occur at slower plasma rotation and lower EP energy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Finite magnetic well effects on resistive and drift-resistive ballooning modes in a shaped tokamak

The impact of plasma shaping through magnetic well modifications on the stability of resistive ballooning modes (RBMs) in tokamaks is analysed, also including finite diamagnetic flows. Furthermore, various limiting cases of the dispersion relation, obtained by matching the ballooning equation across the ideal and resistive layers, are analysed. It is found that stability is generally improved by the combination of vertical elongation and positive triangularity, although, in some cases, the growth rate of the unstable mode can be enhanced by these effects. Usually, vertically elongated plasmas with no triangularity are prone to exhibit worse stability properties. A value for the critical β above which RBMs are driven unstable is identified, and a connection with type-III ELM activity is established.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

A Low-Power, Radiation-Resistant, Silicon-Drift-Detector Array for Extraterrestrial Element Mapping

We are developing a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) for measuring the abundances of light surface elements (C to Fe) fluoresced by ambient radiation on remote airless bodies. The value of fluorescence spectrometry for surface element mapping is demonstrated by its inclusion on three recent lunar missions and by exciting new data that have recently been announced from the Messenger Mission to Mercury. The SDD-XRS instrument that we have been developing offers excellent energy resolution and an order of magnitude lower power requirement than conventional CCDs, making much higher sensitivities possible with modest spacecraft resources. In addition, it is significantly more radiation resistant than x-ray CCDs and therefore will not be subject to the degradation that befell recent lunar instruments. In fact, the intrinsic radiation resistance of the SDD makes it applicable even to the harsh environment of the Jovian system where it can be used to map the light surface elements of Europa. In this paper, we first discuss our element-mapping science-measurement goals. We then derive the necessary instrument requirements to meet these goals and discuss our current instrument development status with respect to these requirements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Resistance of The Flex-Wire Windings

In this paper, an analysis of the flexible printed circuit board (FPCB) windings is performed. A one-dimensional model of the flex-wire winding is introduced and an equation for the FPCB ac winding resistance is derived. Experimental verification of derived equations is performed, i.e., impedance and power loss measurements.

Wojda, Rafal↗
DOE OSTI2017

Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator

Resistive memory (ReRAM) shows promise for use as an analog synapse element in energy-efficient neural network algorithm accelerators. A particularly important application is the training of neural networks, as this is the most computationally-intensive procedure in using a neural algorithm. However, training a network with analog ReRAM synapses can significantly reduce the accuracy at the algorithm level. In order to assess this degradation, analog properties of ReRAM devices were measured and hand-written digit recognition accuracy was modeled for the training using backpropagation. Bipolar filamentary devices utilizing three material systems were measured and compared: one oxygen vacancy system, Ta-TaO x , and two conducting metallization systems, Cu-SiO 2 , and Ag/chalcogenide. Analog properties and conductance ranges of the devices are optimized by measuring the response to varying voltage pulse characteristics. Key analog device properties which degrade the accuracy are update linearity and write noise. Write noise may improve as a function of device manufacturing maturity, but write nonlinearity appears relatively consistent among the different device material systems and is found to be the most significant factor affecting accuracy. As a result, this suggests that new materials and/or fundamentally different resistive switching mechanisms may be required to improve device linearity and achieve higher algorithm training accuracy.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2019

Outstanding radiation resistance of tungsten-based high-entropy alloys

A body-centered cubic W-based refractory high entropy alloy with outstanding radiation resistance has been developed. The alloy was grown as thin films showing a bimodal grain size distribution in the nanocrystalline and ultrafine regimes and a unique 4-nm lamella-like structure revealed by atom probe tomography (APT). Transmission electron microscopy (TEM) and x-ray diffraction show certain black spots appearing after thermal annealing at elevated temperatures. TEM and APT analysis correlated the black spots with second-phase particles rich in Cr and V. No sign of irradiation-created dislocation loops, even after 8 dpa, was observed. Furthermore, nanomechanical testing shows a large hardness of 14 GPa in the as-deposited samples, with near negligible irradiation hardening. Theoretical modeling combining ab initio and Monte Carlo techniques predicts the formation of Cr- and V-rich second-phase particles and points at equal mobilities of point defects as the origin of the exceptional radiation tolerance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of defects on the femtosecond laser damage resistance of multilayer dielectric gratings

Multilayer dielectric (MLD) gratings with high diffraction efficiency and a high laser-induced damage (LID) threshold for pulse compressors are key to scaling the peak and average power of chirped pulse amplification lasers. However, surface defects introduced by manufacturing, storage, and handling processes can reduce the LID resistance of MLD gratings and impact the laser output. The underlying mechanisms of such defect-initiated LID remain unclear, especially in the femtosecond regime. In this Letter, we model dynamic processes in interactions of a 20-fs near-infrared (NIR) laser pulse and a MLD grating design in the presence of cylindrically symmetrical nodules and particle contaminants and cracks at the surface. Utilizing a dynamic model based on a 2D finite difference in time domain (FDTD) field solver coupled with photoionization, electron collision, and refractive index modification, we study the simulation results for the damage site distribution initiated by defects of various types and sizes and its impact on the LID threshold of the grating design.

Zhang, Simin (ORCID:0000000174948230)↗
NASA NTRS2009

Muscle Volume Increases Following 16 Weeks of Resistive Exercise Training with the Advanced Resistive Exercise Device (ARED) and Free Weights

Space flight-induced muscle atrophy, particularly in the postural and locomotorymuscles, may impair task performance during long-duration space missions and planetary exploration. High intensity free weight (FW) resistive exercise training has been shown to prevent atrophy during bed rest, a space flight analog. NASA developed the Advanced Resistive Exercise Device (ARED) to simulate the characteristics of FW exercise (i.e. constant mass, inertial force) and to be used as a countermeasure during International Space Station (ISS) missions. PURPOSE: To compare the efficacy of ARED and FW training to induce hypertrophy in specific muscle groups in ambulatory subjects prior to deploying ARED on the ISS. METHODS: Twenty untrained subjects were assigned to either the ARED (8 males, 3 females) or FW (6 males, 3 females) group and participated in a periodizedtraining protocol consisting of squat (SQ), heel raise (HR), and deadlift(DL) exercises 3 d wk-1 for 16 wks. SQ, HR, and DL muscle strength (1RM) was measured before, after 8 wks, and after 16 wks of training to prescribe exercise and measure strength changes. Muscle volume of the vastigroup (V), hamstring group (H), hip adductor group (ADD), medial gastrocnemius(MG), lateral gastrocnemius(LG), and deep posterior muscles including soleus(DP) was measured using MRI pre-and post-training. Consecutive cross-sectional images (8 mm slices with a 2 mm gap) were analyzed and summed. Anatomical references insured that the same muscle sections were analyzed pre-and post-training. Two-way repeated measures ANOVAs (p<0.05) were used to test for differences in muscle strength and volume between training devices. RESULTS: SQ, HR, and DL 1RM increased in both FW (SQ: 49+/-6%, HR: 12+/-2%, DL: 23+/-4%) and ARED (SQ: 31+/-4%, HR: 18+/-2%, DL: 23+/-3%) groups. Both groups increased muscle volume in the V (FW: 13+/-2%, ARED: 10+/-2%), H (FW: 3+/-1%, ARED: 3+/-1 %), ADD (FW: 15=/-2%, ARED: 10+/-1%), LG (FW: 7+/-2%, ARED: 4+/-1%), MG (FW: 7+/-2%, ARED: 5+/-2%), and DP (FW: 2+/-1%; ARED: 2+/-1%) after training. There were no between group differences in muscle strength or volume. CONCLUSIONS: The increase in muscle volume and strength following ARED training is not different than FW training. With the training effects similar to FW and a 600 lb load capacity, ARED likely will protect against muscle atrophy in microgravity.

Nash, R. E.↗
DOE OSTI2019

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

GaN p ++ /n ++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 10 20 cm -3 shows NDR at~1.8 V and a large current density of 3.4 KA/cm 2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

Epitaxy↗