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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Machine Learning for Neutron Resonance Evaluations [Slides]

The performance of nuclear reactors and other nuclear systems depends on a precise understanding of the neutron interaction cross sections for materials used in these systems. These cross sections exhibit a resonance structure whose shape is determined in part by the angular momentum quantum numbers of the resonances. The correct assignment of the quantum numbers of neutron resonances is therefore of paramount importance. In this presentation, we describe the application of machine learning to automate the quantum number assignments. Scikit-learn classifiers were trained on simulated resonance data whose statistical properties were chosen to mimic real data. We explored the use of several physics (and random matrix theory)-motivated features for training the classifiers, including the nearest neighbor spacing distribution, cumulative level distribution, and channel width distributions. Initial results demonstrated that we can determine resonance spin groups somewhat reliably. We are now investigating the application of our approach to 52 Cr resonance data.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ∼66 mV/decade and a drain-induced barrier-lowering of ∼2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Robustness of Gauge Digitization to Quantum Noise

Quantum noise limits the use of quantum memory in high energy physics simulations. In particular, it breaks the gauge symmetry of stored quantum states. We examine this effect for abelian and nonabelian theories and demonstrate that optimizing the digitization of gauge theories to quantum memory to account for noise channels can extend the lifetime before complete loss of gauge symmetry by $2-10\times$ over some other digitizations. These constructions also allow for quantum error correction to integrate the symmetries of quantum fields and prioritize the largest gauge violations.

Gustafson, Erik J.↗
DOE OSTI2017

Influence of nonlinear interaction on the capacity of an optical dispersion-compensating channel

A channel with weight coefficients of nonlinear finite memory is simulated numerically. Areas of the signal power are found where the capacity is higher than that of a regular Gaussian channel. It is shown that an increase in the number of accountable adjacent symbols has little effect on the channel capacity. The numerical calculation reveals that the negative mean dispersion of the link reduces the interaction of neighbouring pulses. (optical information transmission)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: (1) the potential profile from source to channel and (2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on non-equilibrium Green's functions. It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-to-band tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provide a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size-, and/or geometry-dependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Single-shot Quantum Signal Processing Interferometry

Quantum systems of infinite dimension, such as bosonic oscillators, provide vast resources for quantum sensing. Yet, a general theory on how to manipulate such bosonic modes for sensing beyond parameter estimation is unknown. We present a general algorithmic framework, quantum signal processing interferometry (QSPI), for quantum sensing at the fundamental limits of quantum mechanics by generalizing Ramsey-type interferometry. Our QSPI sensing protocol relies on performing nonlinear polynomial transformations on the oscillator's quadrature operators by generalizing quantum signal processing (QSP) from qubits to hybrid qubit-oscillator systems. We use our QSPI sensing framework to make efficient binary decisions on a displacement channel in the single-shot limit. Theoretical analysis suggests the sensing accuracy, given a single-shot qubit measurement, scales inversely with the sensing time or circuit depth of the algorithm. We further concatenate a series of such binary decisions to perform parameter estimation in a bit-by-bit fashion. Numerical simulations are performed to support these statements. Our QSPI protocol offers a unified framework for quantum sensing using continuous-variable bosonic systems beyond parameter estimation and establishes a promising avenue toward efficient and scalable quantum control and quantum sensing schemes beyond the NISQ era.

Physics↗
DOE OSTI2016

Radial dependence of solar energetic particles derived from the 15 March 2013 solar energetic particle event and global MHD simulation

We study an unusual solar energetic particle (SEP) event that was associated with the coronal mass ejection (CME) on March 15, 2013. Enhancements of the SEP fluxes were first detected by the ACE spacecraft at 14:00 UT, ∼7 hours after the onset of the CME (07:00 UT), and the SEP’s peak intensities were recorded ∼36 hours after the onset of the CME. Our recent study showed that the CME-driven shock Mach number, based on a global three-dimensional (3-D) magnetohydrodynamic (MHD) simulation, is well correlated with the time-intensity of 10-30 MeV and 30-80 MeV protons. Here we focus on the radial dependence (r{sup −α}) of {sup 4}He (3.43-41.2 MeV/n) and O (7.30-89.8 MeV/n) energetic particles from ACE/SIS. It is found that the scaling factor (α) ranges between 2 and 4 for most of the energy channels. We also found that the correlation coefficients tend to increase with SEP energies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Progress on 3D SRF-based architecture for quantum computing

Superconducting radio frequency (SRF) cavities are excellent choices for storing and manipulating quantum information as quantum d-level systems (qudits) due to their exceptionally long lifetimes and large accessible Hilbert spaces. A common strategy to manipulate the states is to use a nonlinear element like a transmon. We present preliminary experimental results obtained with cavity displacements and selective number dependent arbitrary phase gates for universal qudit control, and its application towards High-energy physics (HEP) simulations and beyond. We discuss the advantages and challenges associated with building a 3D SRF architecture while maintaining long cavity lifetimes in the presence of lossy components. We show how the system coherence properties can be preserved by carefully engineering to minimize the participation of the long coherence modes in different loss channels, while ensuring sufficient quantum controllability. We further discuss the path towards building multi-qudit systems.

Romanenko, Alexander↗
DOE OSTI2014

Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Simulating nonlinear optical processes on a superconducting quantum device

Simulating plasma physics on quantum computers is difficult because most problems of interest are nonlinear, but quantum computers are not naturally suitable for nonlinear operations. In weakly nonlinear regimes, plasma problems can be modelled as wave–wave interactions. In this paper, we develop a quantization approach to convert nonlinear wave–wave interaction problems to Hamiltonian simulation problems. We demonstrate our approach using two qubits on a superconducting device. Unlike a photonic device, a superconducting device does not naturally have the desired interactions in its native Hamiltonian. Nevertheless, Hamiltonian simulations can still be performed by decomposing required unitary operations into native gates. To improve experimental results, we employ a range of error-mitigation techniques. Apart from readout error mitigation, we use randomized compilation to transform undiagnosed coherent errors into well-behaved stochastic Pauli channels. Moreover, to compensate for stochastic noise, we rescale exponentially decaying probability amplitudes using rates measured from cycle benchmarking. We carefully consider how different choices of product-formula algorithms affect the overall error and show how a trade-off can be made to best utilize limited quantum resources. This study provides an example of how plasma problems may be solved on near-term quantum computing platforms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

Here, we report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy. At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor 𝜈 = 0 and |𝜈| ≥ 1 integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

Hall effect↗
DOE OSTI2015

Experimental and numerical evaluation of freely spacing-tunable multiwavelength fiber laser based on two seeding light signals

A model of multiwavelength erbium-doped fiber laser (MEFL), which takes into account the impact of fiber attenuation on the four-wave-mixing (FWM), is proposed. Using this model, we numerically study the output characteristics of the MEFL based on FWM in a dispersion shift fiber with two seeding light signals (TSLS) and experimentally verify these characteristics. The numerical and experimental results show that the number of output channels can be increased with the increase of the erbium-doped fiber pump power. In addition, by decreasing the spacing of TSLS and increasing the power of TSLS, the number of output channels can be increased. However, when the power of TSLS exceeds a critical value, the number of output channels decreases. The results by numerical simulation are consistent with experimental observations from the MEFL.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Extending the computational reach of a superconducting qutrit processor

Quantum computing with qudits is an emerging approach that exploits a larger, more connected computational space, providing advantages for many applications, including quantum simulation and quantum error correction. Nonetheless, qudits are typically afflicted by more complex errors and suffer greater noise sensitivity which renders their scaling difficult. In this work, we introduce techniques to tailor arbitrary qudit Markovian noise to stochastic Weyl–Heisenberg channels and mitigate noise that commutes with our Clifford and universal two-qudit gate in generic qudit circuits. We experimentally demonstrate these methods on a superconducting transmon qutrit processor, and benchmark their effectiveness for multipartite qutrit entanglement and random circuit sampling, obtaining up to 3× improvement in our results. To the best of our knowledge, this constitutes the first-ever error mitigation experiment performed on qutrits. Our work shows that despite the intrinsic complexity of manipulating higher-dimensional quantum systems, noise tailoring and error mitigation can significantly extend the computational reach of today’s qudit processors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

A trapping tolerant drain current based temperature measurement of β -Ga 2 O 3 MOSFETs

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga 2 O 3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K∙mm/W to be measured in Ga 2 O 3 MOSFETs. However, neglecting the effect of trapping causes an error of ~15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

The Electron-Conformational Model of Ryanodine Receptors of the Heart Cell

The main ideas of an electron-conformational (EC) model of ligand-activated ryanodine channels (RyR) that reduces many degrees of freedom of this gigantic nanoscopic molecular complex to two so-called electron and conformational degrees of freedom are presented. In the toy model, the conformational potential or energy profile of the RyR channel represents two branches that describe the dependence of energy on the conformational coordinate (reaction coordinate) in the initial and ligand-activated states, respectively. A model extension that takes into account both the tetrameric structure of the RyR channel and additional (orthogonal) rotational conformational mode has been considered. The EC model has been demonstrated to give a biophysical basis to the traditional phenomenological model of Markov chains. To demonstrate the possibilities of the EC model, we refer to examples of model description of the dynamics of isolated RyR channels and clusters of RyR channels in release units of the heart cell.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Quantitative shearography: error reduction by using more than three measurement channels

Shearography is a noncontact optical technique used to measure surface displacement derivatives. Full surface strain characterization can be achieved using shearography configurations employing at least three measurement channels. Each measurement channel is sensitive to a single displacement gradient component defined by its sensitivity vector. A matrix transformation is then required to convert the measured components to the orthogonal displacement gradients required for quantitative strain measurement. This transformation, conventionally performed using three measurement channels, amplifies any errors present in the measurement. This paper investigates the use of additional measurement channels using the results of a computer model and an experimental shearography system. Results are presented showing that the addition of a fourth channel can reduce the errors in the computed orthogonal components by up to 33% and that, by using 10 channels, reductions of around 45% should be possible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2001

Quantum Mechanical Study of Nanoscale MOSFET

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Svizhenko, Alexei↗
DOE OSTI2018

Chloride Ion Transport by the E. coli CLC Cl – /H + Antiporter: A Combined Quantum-Mechanical and Molecular-Mechanical Study

We performed steered molecular dynamics (SMD) and umbrella sampling simulations of Cl – ion migration through the transmembrane domain of a prototypical E. coli CLC Cl – /H + antiporter by employing combined quantum-mechanical (QM) and molecular-mechanical (MM) calculations. The SMD simulations revealed interesting conformational changes of the protein. While no large-amplitude motions of the protein were observed during pore opening, the side chain rotation of the protonated external gating residue Glu148 was found to be critical for full access of the channel entrance by Cl – . Moving the anion into the external binding site (S ext ) induced small-amplitude shifting of the protein backbone at the N-terminal end of helix F. As Cl – traveled through the pore, rigid-body swinging motions of helix R separated it from helix D. Helix R returned to its original position once Cl – exited the channel. Population analysis based on polarized wavefunction from QM/MM calculations discovered significant (up to 20%) charge loss for Cl – along the ion translocation pathway inside the pore. The delocalized charge was redistributed onto the pore residues, especially the functional groups containing π bonds (e.g., the Tyr445 side chain), while the charges of the H atoms coordinating Cl – changed almost negligibly. Potentials of mean force computed from umbrella sampling at the QM/MM and MM levels both displayed barriers at the same locations near the pore entrance and exit. However, the QM/MM PMF showed higher barriers (~10 kcal/mol) than the MM PMF (~2 kcal/mol). Binding energy calculations indicated that the interactions between Cl – and certain pore residues were overestimated by the semi-empirical PM 3 Hamiltonian and underestimated by the CHARMM36 force fields, both of which were employed in the umbrella sampling simulations. In particular, CHARMM36 underestimated binding interactions for the functional groups containing π bonds, missing the stabilizations of the Cl – ion due to electron delocalization. The results suggested that it is important to explore these quantum effects for accurate descriptions of the Cl – transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗