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At least 145 records · Page 8

All sources NASA NTRS DOE OSTI

DOE OSTI2020

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗

NASA NTRS1996

Variable-Speed Induction Motor Drives for Aircraft Environmental Control Compressors

New, more-efficient designs for aircraft jet engines are not capable of supplying the large quantities of bleed air necessary to provide pressurization and air conditioning for the environmental control systems (ECS) of the next generation of large passenger aircraft. System analysis and engineering have determined that electrically-driven ECS can help to maintain the improved fuel efficiencies; and electronic controllers and induction motors are now being developed in a NASA/NPD SBIR Program to drive both types of ECS compressors. Previous variable-speed induction motor/controller system developments and publications have primarily focused on field-oriented control, with large transient reserve power, for maximum acceleration and optimum response in actuator and robotics systems. The application area addressed herein is characterized by slowly-changing inputs and outputs, small reserve power capability for acceleration, and optimization for maximum efficiency. This paper therefore focuses on the differences between this case and the optimum response case, and shows the development of this new motor/controller approach. It starts with the creation of a new set of controller requirements. In response to those requirements, new control algorithms are being developed and implemented in an embedded computer, which is integrated into the motor controller closed loop. Buffered logic outputs are used to drive the power switches in a resonant-technology, power processor/motor-controller, at switching/resonant frequencies high enough to support efficient high-frequency induction motor operation at speeds up to 50,000-RPA

Mildice, J. W.↗

NASA NTRS2000

NASA's X2000 Program: An Institutional Approach to Enabling Smaller Spacecraft

The number of NASA science missions per year is increasing from less than one to more than six. At the same time, individual mission budgets are smaller and cannot afford their own dedicated technology developments. In response to this, NASA has formed the X2000 Program. This program, which is divided into a set of subsequent "deliveries" will provide the basic avionics, power, communications, and software capability for future science missions. X2000 First Delivery, which will be completed in early 2001, will provide a full-functioned one MRAD tolerant flight computer, power switching electronics, a highly efficient radioisotope power source, and a transponder that provides high-level services at both 8.4 GHz and 32 GHz bands. The X2000 Second Delivery, which will be completed in the 2003 time frame, will enable complete spacecraft in the 10-50 kg class. All capabilities delivered by the X2000 program will be commercialized within the US and therefore will be available for others to use. Although the immediate customers for these technologies are deep space missions, most of the capabilities being delivered are generic in nature and will be equally applicable to Earth Observation missions.

Deutsch, Leslie J.↗

NASA NTRS1977

Multiple feedback control apparatus for power conditioning equipment

An improved feedback control system to govern the cyclic operation of the power switch of a non-dissipative power conditioning equipment. The apparatus includes two or three control loops working in unison. The first causes the output DC level to be compared with a reference, and the error amplified for control purposes. The second utilizes the AC component of the voltage across the output filter inductor or the current through the output filter capacitor, and the third loop senses the output transients.

Biess, John↗

NASA NTRS1981

High power solar array switching regulation

It is pointed out that spacecraft utilization projections for the 1980s and beyond show a trend toward extended lifetimes and larger electric power systems. The need for improved power management and energy transfer arising in connection with this trend has resulted in the conduction of a Solar Array Switching Power Management study. A description is presented of initial development work performed in the study, taking into account the characteristics for three mission classes. Attention is given to the manned LEO platform (250-kW average load), the unmanned GEO platform (50-kW average load), and an ion propulsion orbit transfer vehicle (50- to 250 kW load).

Decker, D. K.↗

NASA NTRS1989

MCTs and IGBTs - A comparison of performance in power electronic circuits

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Sul, S. K.↗

DOE OSTI2020

A New Configuration of Paralleled Modular ANPC Multilevel Converter Controlled by an Improved Modulation Method for 1 MHz, 1 MW EV Charger

In this work, a new configuration of the modular multilevel converter (MLC) based on the parallel connection of three-level active-neutral-point-clamped (3L-ANPC) cells as well as its improved modulation method is proposed for 1 MHz, 1 MW electric vehicle (EV) megacharger. In the proposed paralleled modular ANPC-MLC, only six high-frequency silicon carbide (SiC) power switches operating at 333 kHz are required to generate 1 MHz switching frequency spectrum. Moreover, the operating voltage of all power devices is halved, the magnitude of the first switching frequency harmonic cluster is decreased by the factor of five, and the load current is equally distributed between the 3L-ANPC legs by employing the proposed improved modulation method. Hence, the modularity, efficiency, and power density of the proposed converter are notably increased, whereas the value of passive components and the overall switching loss are remarkably decreased. In addition, an optimized design of the one 3L-ANPC cell of the proposed paralleled modular ANPC-MLC for 1 MHz, 1MW EV megacharger using Ansys SIwave, Icepak, and Q3D finite element method platforms is presented and analyzed in detail. The provided experimental results of the down-scaled setup verify the feasibility and viability of the proposed configuration as well as its improved switching pattern.

42 ENGINEERING↗

NASA NTRS1975

Two dimensional thermal and charge mapping of power thyristors

The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.

Hu, S. P.↗

NASA NTRS2005

The Space Technology 5 Power System Design

The Space Technology 5 (ST5) mission is a NASA New Millennium Program (NMP) project that was developed to validate new technologies for future missions and to demonstrate the feasibility of building and launching multiple, miniature spacecraft that can operate as science probes, collecting research quality measurements. The three satellites in the ST5 constellation will be launched into a sun synchronous LEO (Low Earth Orbit) in early 2006. ST5 fits in the 25 kilogram and 24 Watt class of miniature but fully capable spacecraft. The power system design features the use of new technology components and a low voltage power bus. In order to hold the mass and volume low and to qualify new technologies for future use in space, high efficiency triple junction solar cells and a lithium ion battery were baselined into the design. The Power System Electronics (PSE) was designed for a high radiation environment and uses hybrid microcircuits for power switching and over current protection. The ST5 power system architecture and technologies will be presented.

Stewart, Karen D.↗

NASA NTRS1979

Voltage-current-power meter for photovoltaic solar arrays

A meter is disclosed for measuring the voltage, current, and power (VIP) parameters of a photovoltaic solar array, or array module, under sunlight operating conditions utilizing a variable load connected across the array and controlled by a voltage regulator which responds to the difference between the output voltage of the array and a programmed test voltage from a source which generates a single ramp voltage for measuring and recording current as a function of voltage, repeated ramp voltages at a high rate for peak output measurements or a DC voltage for VIP measurements at selected points on the I-V characteristic curve of the array. The voltage signal from a current sensing element, such as a shunt resistor in series with the variable load, is compared with the output current of a reference solar cell to provide a normalizing signal to be added to the signal from the current-sensing element in order to provide a record of array current as a function of array voltage, i.e., for all load conditions from short circuit to open circuit. As the normalized current is thus measured, an analog multiplier multiplies the array voltage and normalized current to provide a measurement of power. Switches are provided to selectively connect the power, P, current, I, or voltage, V, to a meter, directly or through a peak detector. At the same time any one of the parameters V, I and P may be recorded as a function of any other parameter.

Ross, Ronald G.↗

NASA NTRS1991

System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the addition of extra energy storage elements to the HF link are described. The importance of the source voltage level to achieve a better current regulation for the source side PDMC is also briefly discussed. The power levels achieved in the motoring mode of operation show that the proposed power levels achieved in the generating mode of operation can also be easily achieved provided that no mechanical speed limitation were present to drive the induction machine at the proposed power level.

Lipo, Thomas A.↗

NASA NTRS1984

Advances in solid state switchgear technology for large space power systems

High voltage solid state remote power controllers (RPC's) and the required semiconductor power switches to provide baseline technology for large, high power distribution systems in the space station, all electric airplane and other advanced aerospace applications were developed. The RPC's were developed for dc voltages from 28 to 1200 V and ac voltages of 115, 230, and 440 V at frequencies of 400 Hz to 20 kHz. The benefits and operation of solid state RPC's and highlights of several developments to bring the RPC to technology readiness for future aerospace needs are examined. The 28 V dc Space Shuttle units, three RPC types at 120 V dc, two at 270/300 V dc, two at 230 V ac and several high power RPC models at voltages up to 1200 V dc with current ratings up to 100 A are reviewed. New technology programs to develop a new family of (DI)2 semiconductor switches and 20 kHz, 440 V ac RPC's are described.

Sundberg, G. R.↗

NASA NTRS1984

Advanced in solid state switchgear technology for large space power systems

High voltage solid state remote power controllers (RPC's) and the required semiconductor power switches to provide baseline technology for large, high power distribution systems in the Space Station, all electric airplane and other advanced aerospace applications were developed. The RPC's were developed for dc voltages from 28 to 1200 V and ac voltages of 115, 230, and 440 V at frequencies of 400 Hz to 20 kHz. The benefits and operation of solid state RPC's and highlights of several developments to bring the RPC to technology readiness for future aerospace needs are examined. The 28 V dc Space Shuttle units, three RPC types at 120 V dc, two at 270/300 V dc, two at 230 V ac and several high power RPC models at voltages up to 1200 V dc with current ratings up to 100 A are reviewed. New technology programs to develop a new family of (DI)2 semiconductor switches and 20 kHz, 440 V ac RPC's are described.

Sundberg, G. R.↗

NASA NTRS1979

DC static switch circuit with power saving feature

A main switch transistor is provided with a base drive circuit to vary the base drive current in accordance with load current to minimize power dissipation. Base drive may also be limited to a maximum for overload current limiting.

Baker, Donal E.↗

NASA NTRS1993

Fail-Safe Synchronizer For Power Supply

Fail-safe synchronizer feeds external synchronizing signal to switching power supply. When external synchronizing signal lost, it feeds signal from relaxation oscillator to power supply.

Katz, Richard B.↗

DOE OSTI2025

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Hexagonal Boron Nitride: Physical Properties, Hydride Vapor‐Phase Epitaxy Growth of Large‐Diameter Quasi‐Bulk Wafers and Applications

Hexagonal boron nitride ( h ‐BN), with its ultrawide bandgap and 2D structure, holds an immense promise for advanced semiconductor applications. Scaling bulk crystals to large‐diameter wafers, crucial for complex device fabrication, remains a challenge with high temperature, high pressure, and metal flux solution methods. To address this, recent efforts have focused on hydride vapor‐phase epitaxy (HVPE) for producing large diameter thick h ‐BN quasi‐bulk wafers, reaching hundreds of micrometers. These HVPE‐grown quasi‐bulk crystals exhibit excellent c ‐axis long‐range order. Notably, the in‐plane mobility‐lifetime products for both electrons and holes surpass 10 −4 cm 2 V −1 , which are two orders of magnitude greater than the out‐of‐plane (vertical) values, highlighting the potential for high‐performance devices leveraging superior lateral transport. Lateral detectors fabricated from 100 μm thick B‐10 enriched h‐ BN wafers have achieved a record 60% thermal neutron detection efficiency. Based on its physical properties, h‐ BN appears to be an outstanding material of choice for light‐triggered electronic power switches capable of supporting high ‐ voltage and high ‐ power operations. These recent advancements in large‐diameter h ‐BN quasi‐bulk crystal growth, enabled by HVPE, pave the way for applications spanning deep UV photonics, high‐power electronics, high‐efficiency neutron detection, and quantum information technologies, establishing h ‐BN as both a versatile active semiconductor and an ideal substrate.

Jiang, Hongxing [Department of Electrical and Comp↗

NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗