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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

EMI Mitigation of a Ćuk-Based Power-Electronic System Using Switching-Sequence-Based Control

Switching-sequence-based control (SBC) laws when designed based on topological switching behavior can have positive effects on slow- and fast-scale dynamics of a power-electronic system (PES). The slow-scale control can encompass fast PES state regulation and tracking, based on predefined objective, while fastscale control can address differential-mode (DM) and commonmode (CM) spectral-peak energy associated with PES switching operation. Such control laws may offer enhanced programmability to conventional PES design where bulky electromagnetic interference (EMI) filters have been traditionally used to reduce EMI of switching power converters to meet EMI regulatory standards. An EMI filter is always a less programmable solution since it is usually designed for the worst-case EMI mitigation and usually overkill for a PES operating under reduced load condition. The control scheme outlined in this article offers EMI mitigation across wide operating regions without compromising PES regulation. Moreover, it does so by use of switching sequences that guarantee the reachability of the PES dynamics using an advanced Lyapunov-function-based approach. SBC is a powerful tool to generate control actions for a PES based on multivariate PES state constraints. Hence, contemporary EMI regulatory standards are used as constraints in the SBC formulation to operate the PES under wide operating regime while autonomously mitigating the EMI levels. The work may be of paramount importance for operating the ultra-fast-transition recent wide-bandgap semiconductor devices like GaN–FET and SiC MOSFET under higher power with increasing switching frequencies, which is usually desirable for increased power density and reduced switching losses. Here, a hardware Cuk–PES operated ´ with GaN–FETs is fabricated and is used for case illustration. It is shown by experimental results how SBC mitigate DM and CM EMI noise of the PES while maintaining regulation even for the higher order nonminimum phase PES, while reducing sensor requirements using state observer derived from the switching model of the PES.

42 ENGINEERING↗
DOE OSTI2021

A Low Voltage DC Power Electronic Hub to Support Buildings

This paper presents the communication, control, and architecture, for a low voltage (nominal 480V) hybrid AC/DC microgrid for supporting small commercial buildings with critical data center loads. The proposed system is based on a dc-power electronic hub (PEH) that seamlessly integrates renewable energy resources, energy storage, and back-up generation to support commercial building economical energy management and reliability. This PEH concept provides a parallelization of critical power to the commercial and industrial buildings leading to increased efficiency and reliability compared to traditional uninterruptable power supplies. The demonstration of the proposed PEH architecture and controls is conducted through a controller hardware in the loop validation.

Starke, Michael↗
DOE OSTI2024

Medium Voltage Power Electronics Enabling DER and Increasing Climate Resiliency

As renewables grow to meet both increased decarbonization and electrification goals, functionality such as grid-forming capability needs to be developed. Medium-voltage power electronic-enabled interfaces for renewables and as new devices within the grid themselves are an ideal platform for implementing these functionalities.

decarbonization↗
DOE OSTI2019

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al 0.05 Ga 0.45 In 0.5 P/Al 0.4 Ga 0.1 In 0.5 P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

36 MATERIALS SCIENCE↗
DOE OSTI2024

RePED 250: A Revolutionary, High Drilling Rate, High-T Geothermal Drilling System and Companion Power Electronics

Geothermal drilling in the United States is drastically slower and more costly than Oil and Gas (O&G) drilling, primarily due to the additional challenges in geothermal wells: hard rock types and high temperatures. The Repetitive Pulsed Electric Drill (250°C) (RePED-250), developed by Tetra Corporation has the potential to change this with a novel electro-crushing technology. RePED-250 releases pulses of electricity through the rock, which causes it to break in tension, instead of compression like conventional rotary drilling. The tensile strength of hard rocks like granite is only ~5% of their compressive strength, requiring less energy, time, and wear on the bit compared to conventional drilling. The RePED drill bit has no moving parts, uses drilling mud to remove rock fragments, and uses standard drill pipe, enabling a direct transition from conventional drilling systems. The objective of this project is to move RePED technology towards commercial readiness for high-temperature geothermal applications. This involves: 1) Creating high-temperature, high power electronic components for the RePED drill capable of operating at the high temperatures of a geothermal well. The target is a 250°C ambient environment. Specifically, capacitors, high voltage switches, and a downhole generator capable of generating the necessary power. 2) Demonstrating RePED’s effectiveness drilling through hard rock (granite) and examining its pathway to commercialization and effect on the US geothermal market. Work on this project has led to significant improvement over the state-of-the-art for all the examined electronics, through design, modeling, and testing of these novel components, though some additional development is still needed to deploy these high-temperature parts in a geothermal well. Besides their use in RePED-250, each component has applications in other industries where the stability of electronics at high-temperature is needed. To address the second barrier to commercialization, a 9” hole was drilled through a sample block of granite, demonstrating the tool’s effectiveness in hard rock. The team investigated RePED-250’s effect on well cost and the geothermal industry, through various techno-economic models described in the report.

15 GEOTHERMAL ENERGY↗
DOE OSTI2019

Chapter 8: Wind Plant Electrical Systems: Electrical Generation, Machines, Power Electronics, and Collector Systems

One of the earliest nonanimal sources of power used by man was the wind turbine. Wind turbines have been in documented use for more than 1,000 years. The earliest wind-turbine designs were extremely simple; turbines were allowed to rotate at a rate proportional to the velocity of the wind. They were used to pump water, grind grain, cut lumber, and perform a myriad of other tasks. For these purposes, varying speed seldom impacted the effectiveness of the windmill enough to justify the complications of closely controlling rotational speed. Allowing the machines to run at variable speed was in fact highly advantageous as it greatly increased the total energy that could be extracted from the wind.

17 WIND ENERGY↗
DOE OSTI2024

Partitioning of Large-Scale Power Electronics-Based Power Systems for Small-Signal Stability Analysis

The nodal admittance matrix (NAM)-based approach is suitable for analyzing the small-signal stability of large-scale power electronics-based power systems (PEPSs) as it preserves the system structure by utilizing the admittance matrix. Previously, NAM-based area partition has been proposed, which divides the system into various subareas and interconnections for easier analysis of the low-dimension matrix compared to the entire system-based high-dimension matrix. However, no partition algorithm has been presented for the NAM-based area partition method. This paper focuses on implementing the spectral partitioning algorithm for partitioning large-scale PEPSs into a low-dimension matrix to reduce the computation complexity of the analysis. These spectral components facilitate data transformation into a new space, enabling the application of traditional clustering methods like k-means. To evaluate the performance of the partitioning method, the subareas and interconnections obtained from the spectral clustering algorithm are incorporated into the NAM-based area partition method for a large system with 140 buses. The computational times of the original method, where the NAM-based criterion is directly applied to the entire system, are compared with those of the NAM-based partition method in MATLAB. PSCAD simulations of the whole system and the obtained subareas are conducted to validate the effectiveness of the proposed algorithm.

Nupur, Nupur↗
DOE OSTI2025

Spectral Clustering-Based Partitioning of Large-Scale Power Electronics-Based Power Systems for Small-Signal Stability Analysis

The nodal admittance matrix (NAM)-based approach is well-suited for small-signal stability analysis of large-scale power electronics-based power systems (PEPSs), as it preserves the system structure through its admittance matrix. Previous studies have explored partitioning such systems into subareas and interconnections to reduce computational burden; however, they lacked a formal algorithmic procedure for determining feasible partitions. While several grid partitioning methods, such as those based on graph theory or machine learning, exist in the literature, they cannot be directly applied to NAM-based analysis due to differing objectives and constraints. Here, this paper addresses this gap by presenting a systematic, step-by-step procedure for applying a spectral partitioning algorithm that yields a division of the system into subareas suitable for NAM-based analysis. The computational complexity of the proposed method is also derived to demonstrate its efficiency and justify the practicality of the resulting subarea decomposition. The performance of the partitioning method is evaluated by applying the spectral clustering-derived subareas and interconnections to the NAM-based partitioning approach on a 140-bus system. Computational times for the full-system and partitioned NAM analyses are compared using MATLAB. Additionally, PSCAD simulations of the complete system and partitioned subareas are carried out to verify the effectiveness of the proposed method.

Nupur [Univ. of Tennessee, Knoxville, TN (United S↗
DOE OSTI2026

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗
DOE OSTI2022

A High-Voltage High-Reliability Scalable Architecture for Electric Vehicle Power Electronics (Final Report)

This project developed and demonstrated new composite converter technologies that lead to high power density (> 20 kW/L) at power levels of 10s of kW, 100s of kW, or possibly higher, with fundamental advances in converter efficiency and Q that lead to substantial increases in mean time to failure (MTTF). These advantages were realized through development of new composite converter topologies that perform buck, boost, or other conversion functions and that are scalable to higher voltage and power levels through sharing of voltage and current stresses among multiple dissimilar partial-power converter modules. The project led to experimental demonstration of a125 kW multifunction electric vehicle power conversion system having in-creased dc bus voltage (950 V nominal, 1200 V peak) that interfaces a 200 V to 400 V battery pack, and that includes integrated level 2 wired charging and wireless charging functions. The project incorporated SiC MOSFET modules having switching frequencies in excess of 100 kHz, planar magnetics, a hierarchical control architecture that enables scaling to higher voltages and powers with additional converter modules, and a high-power density in excess of 20 kW/L. The research demonstrated how a more complex converter approach can increase mean-time-to-failure, even though the number of elements is increased. This is achieved through significant reduction of temperature rise through fundamentally superior converter circuit topologies. The research also demonstrated new high power planar magnetics that increase power density. The technology is appropriate to a variety of applications including EV power trains, EV charging, PV inverters, battery storage, and similar areas. These systems potentially can be manufactured in the U.S.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2019

HEMP Transformer Defense Through Power Electronics

High altitude electromagnetic pulse (HEMP) generated by exoatmospheric nuclear burst has the ability to affect the electric power grid. The main power grid components, cables and transformers, act as large antennas that have current induced in them from the HEMP. These currents are called geomagneticallyinduced currents (GIC), and they can occur during geomagnetic disturbances from HEMP or solar flares. HEMPs produce pulses with high electric field strengths that breakdown the dielectric of most electronics and, it is broken into three stages: E1 pulse with a microsecond width, E2 the falling trail of the pulse, and E3 a constant DC component. Oak Ridge National Laboratory has proven that transformers fitted with lightning arrestors do not receive damage from E1 and E2 pulses. However, the DC component of the E3 causes the transformer’s core to saturate and induce rapid heating that damages the transformer. SRNL is developing a power electronic system that is connected to the neutral of the high voltage side of large power transformers (LPT). This system will inject the inverse of the DC effect from the HEMP into the primary side of the transformer canceling out the E3 waveform and protecting the transformer from half-cycle-saturation. This year SRNL successfully simulated removing the DC injected and accurately simulated saturation on the transformer.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Power Electronic Substrates for Space Restricted Application

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. In this study, four substrate technologies were evaluated for space-restricted applications: direct-bonded copper, an insulated metal substrate, a thermally annealed pyrolytic graphite–based insulated metal substrate, and direct-bonded aluminum, where the heat sink is directly attached without thermal interface materials. The finite element results suggest that the popular direct-bonded copper substrate has better thermal performance than the rest of the substrates for space-restricted applications. Furthermore, a modified direct-bonded copper is proposed to further improve thermal performance. The evaluation results show that the modified substrate can handle 30% more losses than its traditional counterpart.

Chowdhury, Shajjad↗
DOE OSTI2021

Cyber-Attack Detection for Photovoltaic Farms Based on Power-Electronics-Enabled Harmonic State Space Modeling

Here in this paper, a physics-data-based detection method is proposed to detect a variety of cyber-attacks in Photovoltaic (PV) farms using the power electronics-enabled harmonic state space (HSS) models, which, to our knowledge, is original. At the device level, HSS-based detection is developed to monitor harmonic vectors of individual PV converter with minimum sensor measurements, thus improving accuracy and robustness compared to Kalman Filter-based detection. At the system level that involves multiple PV converters, a clustering approach is developed to investigate attack propagation and accurately locate attack sources within a PV farm. The proposed approach is one of the first attempts to address PV security through interaction between the device and system, maximizing the accuracy and robustness at different levels. To verify the feasibility, a comprehensive attacks model is built, including single attack, coordinated attacks, and replay attacks. Besides, the impacts of irradiance changes are taken into consideration in the test scenarios. With the real-time data acquisition and hardware-in-the-loop testbed, comprehensive test results are provided to verify the feasibility of the proposed detection methodology.

42 ENGINEERING↗
DOE OSTI2022

Regrowth and Selective Area Growth of GaN for Vertical Power Electronics

Gallium Nitride (GaN) has a great potential in high-power and high-frequency applications due to its wide energy gap and good transport property. So far all commercial GaN optoelectronic and electronic devices have planar junctions and heterostructures prepared by epitaxial growth. To take the advantage of the merits of GaN material properties, more sophisticated device configurations such as current-aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), and super-junction (SJ) devices require the ability to form in-plane, lateral junctions by selective area doping (SAD). In this project, we explored a novel approach of realizing SAD through selective-area etching (SAE) followed by selective-area growth (SAG).

36 MATERIALS SCIENCE↗
DOE OSTI2021

Noncured Graphene Thermal Interface Materials for High-Power Electronics: Minimizing the Thermal Contact Resistance

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt%. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Characterization and Failure Analysis of 650-V Enhancement-Mode GaN HEMT for Cryogenically Cooled Power Electronics

In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di / dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the ON-resistance of the channel at the cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. Additionally, the ultrafast switching speed-induced high di / dt and dv / dt at cryogenic temperatures amplify the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultrafast switching speed are given in this article.

42 ENGINEERING↗