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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

A Prototype High-Voltage Pulsed Power Supply for Control of the ITER Shattered Pellet Injection System Flyer Plate Valve

A high-voltage pulsed power supply (HVPPS) has been designed, prototyped, and tested for driving an eddy current actuated propellant valve for the International Thermonuclear Experimental Reactor (ITER) disruption mitigation system. The high-voltage (HV) dc supply output voltage is software programmable, and the energy storage capacitor bank can be readily reconfigured as 200, 400, 600, and 800 μ F, enabling testing and optimization of both the valve drive and valve systems. Multiple system parameters are monitored before, during, and after each firing of the valve. The system parameters are both displayed and stored for further analysis. Control of the setup, firing sequence, and data collection is automated using a LabVIEW-based control program. The programmability and reconfigurability of this system collectively provide a flexible and robust platform for system refinement and optimization. In this article, a summary of the system will be provided including operational sequences, HV switching and associated triggering methods and circuits, and results measured while firing a solid frozen pellet. Additionally, planned refinement activities toward meeting all requirements for ITER integration will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2021

Predictive Coordinated and Cooperative Voltage Control for Systems With High Penetration of PV

In this paper, we propose a predictive coordinated and cooperative voltage control method in a power distribution system with high penetration of photovoltaic (PV) units. First, an integrated coordinated voltage control of voltage regulators (VRs) tap positions and cooperative distributed control of the reactive power output from PV inverters are used to maintain system voltages within an appropriate bandwidth. Next, solar power forecasting is applied to predict voltage changes, which are used to set the VR tap positions and capacitor switch status to prevent large voltage fluctuations. The fine tuning of voltage adjustment is then achieved by cooperative control of PV inverters to maintain a uniform voltage profile across the system. The proposed method is tested on a modified IEEE 123-node test feeder with high penetration of PVs using real measurement data and compared with the base case. Simulation results demonstrate the effectiveness of the integrated voltage control, as well as the enhancement from the predictive control through solar power forecasting-enabled voltage change estimates. Comparison to previous work in the literature shows significant improvement in terms of voltage deviation and reduction in excessive tap changes.

14 SOLAR ENERGY↗
DOE OSTI2024

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters

Smart inverters (SIs) have demonstrated their potential to provide grid services for both transmission and distribution systems. One of these grid services, distribution network voltage regulation by SIs, has the potential to improve network voltage regulation through controlling the reactive and active power output of the SIs. Voltage regulation by SIs will be distributed and might be better suited to controlling local conditions to complement traditional voltage-regulating assets, e.g., tap-changing transformers, capacitor banks, and line voltage regulators. There is a gap in the literature on comparing the SI response characteristics when the SIs are controlled by a local controller or external control signals. This paper presents an experimental study to characterize SI reactive power regulation responses to two different control methods: autonomous control and remote dispatch. We found that SI reactive power regulation responses exhibit important differences between these methods in terms of delays and ramp rate. Finally, power-hardware-in-the-loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL test results show that the SI response characteristics for autonomous control and remote dispatch need to be considered when planning for distribution network voltage regulation using SIs.

autonomous control↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2021

Ultra-Compact High Efficiency Multi-Level Gan-Based PV Inverter

This project developed the key technology for a scalable, high-density photovoltaic (PV) inverter, based on gallium-nitride (GaN) power semiconductors, and advanced digital control. Specifically, we explored the feasibility of a flying-capacitor multi-level inverter for 1.5 kV PV installations, through the development of hardware prototypes utilizing low-inductance commutation loop designs, robust digital control and signaling, and low-cost heatsink integration.

14 SOLAR ENERGY↗
DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗
DOE OSTI2023

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging. This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. The performance (e.g., thermal resistance, pumping power) of the power electronics cooling technologies developed in this project are compared to the performance of current, on-road technology. One of the main challenges to achieving high power densities is associated with packaging high-temperature (up to 250 degrees C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors).

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Noise Optimization for MKIDs with Different Design Geometries and Material Selections

The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.

generation-recombination noise↗
DOE OSTI2024

Operation of Grid Forming Converters as Self Excited Induction Generators Under Non-Ideal Loading Conditions

Self-excited induction generators offer a robust solution for power production for standalone as well as grid-connected systems. In general, self-excited induction generators require excitation capacitors which make use of the machine magnetization characteristics for voltage build up process as well as operation at a specific frequency. In this paper, a self-excited induction machine is modeled with both the electrical and mechanical dynamics. This modeled virtual machine's dynamics are utilized for voltage build up process for a standalone photovoltaic converter connected to a local load for a microgrid application. The modeled machine's parameters are used from the name plate rating from the manufacturer. However, in a microgrid the accommodation of unbalanced and/or nonlinear harmonic rich load is a necessity, therefore, in this work the virtual self-excitation capacitors of the modeled machine are varied based on the machine characteristics. With the objective of ensuring harmonic free point of common coupling voltage, the modeled virtual self-excitation capacitors are varied to accomplish change in terminal frequency and the virtual load torque is varied to obtain voltage magnitude change. To verify the efficacy, the overall system is modeled in MATLAB/Simulink and PLECS domain and most important case studies are presented.

grid forming converters (GFM)↗
DOE OSTI2026

Flashlamp drive system for a high-energy 10–100 kHz pulse-burst Nd:YAG laser

We present the design of the flashlamp drive system for the NG100 laser, a 1 J/pulse, 10–100 kHz, pulse-burst Nd:YAG laser system being developed for application in a Thomson scattering plasma diagnostic. This flashlamp drive system is under active development, with a prototype now being constructed. The flashlamp drive system is modular, with each module capable of driving a series pair of linear flashlamps. Each drive module contains and is controlled by a dedicated Analog Regulator Controller. Thus each module is independently operable and controllable. This modular approach imposes no intrinsic limit to the number of modules that may be applied to drive the flashlamp pairs in a laser system. Each flashlamp drive module has a switch-regulated topology. An 1800 V main capacitor bank provides 25 kJ of energy storage, while a lower voltage output capacitor bank provides filtering and the initial energy delivered to the flashlamps at the start of the drive pulse. The main bank is recharged after each flashlamp drive pulse. As energy is drawn from the output bank by the flashlamps, an IGBT switching regulator feeds current from the main bank through an inductor to replenish the output capacitor bank. The rate of replenishment is feedback-controlled to maintain a regulated supply of power to the flashlamp load, with a setpoint range of 0.07 to 1.65 MW. An Analog Regulator Controller produces two-state variable pulse width feedback switching of the regulator IGBT. The switching frequency is ≤ 20 kHz, dynamically adjusted to limit ripple of the flashlamp power to ±3% statistical standard deviation of mean. For development or troubleshooting, each module is operable independent of the laser digital control system (microcontroller and FPGA).

Plasma diagnostics - interferometry↗
DOE OSTI2022

Fast and fault-tolerant model predictive control of MMCs under selective harmonic elimination

Selective harmonic elimination (SHE) is a suitable pulse-width modulation (PWM) tech-nique for some applications of modular multilevel converters (MMC) with lower numberof semiconductor submodules (SM). However, SHE can make it difficult to control circu-lating currents in the MMC. Moreover, the MMC is vulnerable to SM switch failures thatreduce its output power magnitude and quality. This paper proposes a fault-tolerant modelpredictive control strategy for MMCs operating with SHE (FT SHE-MPC). The effects ofswitch failure on phase voltage waveforms are studied first. Then, a method is proposedto design the FT SHE waveform to preserve its harmonic performance. Next, the pro-posed FT SHE-MPC is designed to increase the capacitor voltages during an SM failure tomaintain the fundamental component of the faulty phase voltage and control the circulat-ing currents, maintaining balance among line voltages and the output power of the MMC.Additionally, the proposed method offers as much as 60% faster FT transition time and asmuch as 36% lower capacitor voltage ripple. The advantages of the proposed method areverified through offline and real-time simulation studies on a three-phase nine-level MMCin PSCAD/EMTDC software and RTDS.

42 ENGINEERING↗
DOE OSTI2025

A Cost-Effective Wave Energy Harvesting System with Maximum Power Point Tracking Capability

In this paper, we propose a low-cost bidirectional four-switch inverter that transfers three-phase energy between a permanent magnet synchronous generator (PMSG) driven by a wave energy collector and the power grid or a local ac load. To achieve high control performance, the machine-side inverter uses a high-gain observer for rotor position estimation and a Lyapunov-based approach for torque control. For the gridside inverter control, we estimate the filter capacitor voltage with a model reference adaptive system and control the dc-link voltage with a Lyapunov-based energy function. We also track the maximum power point from the sea waves with an integral control law that actively matches the generator impedance with that of the wave collection device. The proposed system supports both grid-following/forming modes. We validate our control design with simulation results on a 3-kW hardware setup.

wave energy, power systems integration, control de↗
DOE OSTI2022

Fixed gap capacitive power transfer coupling for wound field synchronous machines

An electrical rotating machine, such as a generator or motor, communicates power from a stationary location to the rotating rotor of the rotating machine via opposed pairs of capacitor plates, one plate of each pair rotating with the rotor and one plate of each pair fixed not to rotate. Larger plate gaps suitable for mechanically rigid plates are possible through high-voltage and high-frequency AC signals managed by using a dielectric support design for the capacitor plates minimizing dielectric loss and/or impedance matching on the rotor.

Hagen, Skyler S.↗
DOE OSTI2021

A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications

This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗