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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Semiconductor grade, solar silicon purification project

Experimental apparatus and procedures used in the development of a 3-step SiF2(x) polymer transport purification process are described. Both S.S.M.S. and E.S. analysis demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). Recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the goal of $10/Kg(1975 dollars). The process appears to be readily scalable to a major silicon purification facility.

Ingle, W. M.↗
NASA NTRS1979

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Trotter, J. D.↗
NASA NTRS1980

Silicon solar cells with high open-circuit voltage

Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

Minnucci, J. A.↗
NASA NTRS1981

Ion implantation of solar cell junctions without mass analysis

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

Fitzgerald, D.↗
NASA NTRS1983

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach

Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Goesele, U.↗
NASA NTRS1982

Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies

Design principles suggested here aim toward high conversion efficiency (greater than 15 percent) in polysilicon cells. The principles seek to decrease the liabilities of both intragranular and grain-boundary-surface defects. The advantages of a phosphorus atom concentration gradient in a thin (less than 50 microns) base of a p(+)/n(x)/n(+) drift-field solar cell, which produces favorable gradients in chemical potential, minority-carrier mobility and diffusivity, and recombination lifetime (via phosphorus gettering) are suggested. The degrading effects of grain boundaries are reduced by these three gradients and by substituting atoms (P, H, F or Li) for vacancies on the grain-boundary surface. From recent experiments comes support for the benefits of P diffusion down grain boundaries and, for quasi-grain-boundary-free and related structures. New analytic solutions for the n(x)-base include the effect of a power-law dependence between P concentration and lifetime. These provide an upper-bound estimate on the open circuit voltage. Finite-difference numerical solutions of the six Shockley equations furnish complete information about all solar-cell parameters and add insight concerning design.

Lindholm, F. A.↗
NASA NTRS1984

Substrate orientation dependence of enhanced epitaxial regrowth of silicon

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the 100 to the 110 and 111 line orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1 + or - 0.9. Boron produces a higher enhancement factor of 12.2 + or - 1.2, except in the case of 100. Implications of the results on various growth models are considered. The crystalline quality of regrown 111 layers is improved in the doped samples.

Ho, K. T.↗
NASA NTRS1984

The Interaction of Global Biochemical Cycles

The global biosphere in an exceedingly complex system. To gain an understanding of its structure and dynamic features, it is necessary not only to increase the knowledge about the detailed processes but also to develop models of how global interactions take place. Attempts to analyze the detailed physical, chemical and biological processes in this context need to be guided by an advancement of understanding of the latter. It is necessary to develop a strategy of data gathering that severs both these purposes simultaneously. The following papers deal with critical aspects in the global cycles of carbon, nitrogen, phosphorus and sulfur in details as well as the cycle of water and the flow of energy in the Earth's environment. The objective is to set partly the foundation for the development of mathematical models that allow exploration of the coupled dynamics of the global cycles of carbon, nitrogen, phosphorus, sulfur, as well as energy and water flux.

Moore, B., III↗
NASA NTRS1985

Lubricant and additive effects on spur gear fatigue life

Spur gear endurance tests were conducted with six lubricants using a single lot of consumable-electrode vacuum melted (CVM) AISI 9310 spur gears. The sixth lubricant was divided into four batches each of which had a different additive content. Lubricants tested with a phosphorus-type load carrying additive showed a statistically significant improvement in life over lubricants without this type of additive. The presence of sulfur type antiwear additives in the lubricant did not appear to affect the surface fatigue life of the gears. No statistical difference in life was produced with those lubricants of different base stocks but with similar viscosity, pressure-viscosity coefficients and antiwear additives. Gears tested with a 0.1 wt % sulfur and 0.1 wt % phosphorus EP additives in the lubricant had reactive films that were 200 to 400 (0.8 to 1.6 microns) thick.

Townsend, D. P.↗
NASA NTRS1985

Flat-plate solar array project process development area process research of non-CZ silicon material

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

Source record↗
NASA NTRS1985

Laboratory simulations of PH3 photolysis in the atmospheres of Jupiter and Saturn

The effects of pressure, temperature, light wavelength and intensity, and components of the atmosphere of the Jovian planets on the photolysis of PH3 were experimentally studied. The products of the photolysis, P2H4 and red phosphorus, exhibited little variation when the irradiation experiments were performed under conditions prevalent in Jupiter's atmosphere. No quenching of PH2 radicals by the levels of hydrocarbons present in the Jovian atmosphere was noted. The high partial pressure of hydrogen present on Jupiter should have no effect on the course of the photolysis. The low temperatures on Jupiter and Saturn may result in some condensation of P2H4, but P2H4 had sufficient vapor pressure in the experimental studies at 157 K to be slowly converted to red phosphorus. The products of PH3 photolysis were the same whether a 147, 184.9, or 206.2 nm monochromatic light source or a xenon lamp with a broad spectral output was used.

Ferris, J. P.↗
NASA NTRS1986

A metallurgical route to solar-grade silicon

The aim of the process is to produce silicon for crystallization into ingots that can be sliced to wafers for processing into photovoltaic cells. If the potential purity can be realized, the silicon will also be applicable for ribbon pulling techniques where the purification during crystallization is negligible. The process consists of several steps: selection and purification of raw materials, carbothermic reduction of silica, ladle treatment, casting, crushing, leaching, and melting. The leaching step is crucial for high purity, and the obtainable purity is determined by the solidification before leaching. The most difficult specifications to fulfill are the low contents of boron, phosphorus, and carbon. Boron and phosphorus can be excluded from the raw materials, but the carbothermic reduction will unavoidably saturate the silicon with carbon at high temperature. During cooling carbon will precipitate as silicon carbide crystals, which will be harmful in solar cells. The cost of this solar silicon will depend strongly on the scale of production. It is as yet premature to give exact figures, but with a scale of some thousand tons per year, the cost will only be a few times the cost of ordinary metallurgical silicon.

Schei, A.↗
NASA NTRS1986

Lubricant and additive effects on spur gear fatigue life

Spur gear endurance tests were conducted with six lubricants using a single lot of consumable-electrode vacuum melted (CVM) AISI 9310 spur gears. The sixth lubricants was divided into four batches each of which had a different additive content. Lubricant tested with a phosphorus-type load carrying additive showed a statistically significant improvement in life over lubricants without this type of additive. The presence of sulfur type antiwear additives in the lubricant did not appear to affect the surface fatigue life of the gears. No statistical difference in life was produced with those lubricants of different base stocks but with similar viscosity, pressure-viscosity coefficients and antiwar additives. Gears tested with a 0.1 wt pct sulfur and 0.1 wt pct phosphorus EP additives in the lubricant had reactive films that were 200 to 400 (0.8 to 1.6 microns) thick.

Townsend, D. P.↗
NASA NTRS1987

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

Del Alamo, Jesus A.↗
NASA NTRS1990

Self-Aligned Guard Rings For Schottky-Barrier Diodes

Proposed self-aligned guard ring increases active area of Schottky-barrier infrared detector. Concept developed for silicide Schottky-barrier diodes in which platinum silicide or iridium silicide Schottky-contacts provide cutoff wavelengths of about 6 or 10 micrometers. Grid of silicon dioxide doped with phosphorus etched on silicon wafer, and phosphorus from grid diffused into substrate, creating n-type guard rings. Silicide layers formed in open areas of grid. Overlap of guard rings and silicide layers small.

Lin, True-Lon↗
NASA NTRS1990

Experiment K-6-01. Distribution and biochemistry of mineral and matrix in the femurs of rats

Previous analyses of the composition of mineral and matrix in the bone of young rats following space flight has revealed deficits in calcium, phosphorus, and osteocalcin, a non-collagenous protein, without an associated decrease in collagen. To characterize the location and nature of this mineralization defect in a weight bearing long bone, the femur, researchers attempted to relate the spatial distribution of mineral in situ in the proximal, central and distal thirds of the femoral diaphysis to the biochemical composition of bone from the same area. Biochemical analyses revealed lower concentrations of calcium, phosphorus and osteocalcin but not collagen only in the central third of the diaphysis of the flight animals (F) compared to synchronous controls (S). Collagen concentration was reduced only in the proximal third of the diaphysis, where all 3 crosslinks, expressed as nM/mol collagen were higher in F than S. A new technique, x ray microtomography, with a resolution of 26 microns, was used to obtain semi-quantitative data on mineral distribution in reconstructed sections of wet whole bone. To improve the resolution of the mineral density distribution, images of the surfaces of cut sections were analyzed by backscattered electrons in a scanning electron microscope (BSE). There was good agreement between the results of the two stereochemical techniques which revealed distinct patterns of mineralization in transverse and longitudinal directions of the diaphysis. The novel methodology developed for this flight experiment shows considerable promise in elucidating the biochemical nature of what appear to be regional alterations in the mineralization of long bones of animals exposed to spaceflight.

Arnaud, S.↗
NASA NTRS1989

Multiple doping of silicon-germanium alloys for thermoelectric applications

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

Fleurial, Jean-Pierre↗
NASA NTRS1994

Phosphate microaggregates in Archean sediments

Light microscopy conducted on samples of Archean sediments reveals phosphate microaggregates which are suggestive of a biotic origin (Arrhenius et al., 1993). These aggregates, typically 15 micrometers wide and 50 micrometers long, are thought to be the mineral remains of colonies of microorganisms that lived during the late Archean Eon (greater than or equal to 2.5 Ga). Confocal microscopy was used to study the structures of these microaggregates in three dimensions. Samples used in this study are from the lowermost section of drill core taken from the Dales Gorge Member of the Brockman Iron-Formation (Hamersley Basin) in Western Australia. These sediments are well-preserved and escaped extensive metamorphism typically experienced by older rocks of this type. Two types of samples were prepared for study under the microscope: thin sections (30 micrometers) for transmitted light microscopy to study the general rock texture and to locate the grains of interest, and thick sections (3mm) for confocal microscopy to determine the 3-D structure of the aggregates in situ. The samples have been carefully polished so that they may be directly placed on the oil-immersion lens without the use of a cover slip. No chemical treatments of the surfaces have been performed. The aggregates often form clusters, although isolated aggregates have also been found. The clusters tend to distribute along microbands in the rocks. Electron microprobe analyses show that the phosphate grains and their inclusions, besides calcium and phosphorus, contain no major elements heavier than sodium. The proportions of calcium to phosphorus, the absence of stoichiometric amounts of other cations such as magnesium and iron, as well as optical properties suggest apatite as the mineral form.

Mojzsis, S.↗