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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

A 220-GHz InP HEMT Direct Detection Polarimeter

In this article, a 220-GHz direct detection polarimetric receiver is reported. This polarimetric receiver is intended for sensing of the microphysical properties of cloud ice in the earth's upper atmosphere. In the article, we report the measured RF performance, including RF gain of approximately 35 dB per channel and integrated noise figure of the receiver. The noise figure is measured to be 5.1 dB for the horizontally polarized channel and 5.4 dB for the vertically polarized channel. The receiver measures only 1.8 cm × 3.0 cm × 6.4 cm and has a total regulated dc power consumption of 520 mW. This article represents the first 220-GHz polarimetric direct detection receiver and is enabled by an advanced 25-nm indium phosphide (InP) HEMT monolithic microwave integrated circuit (MMIC) technology.

Indium phosphide (InP)↗
NASA NTRS1968

High-temperature-materials study

Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices

Baxter, R. D.↗
NASA NTRS1972

Temperature-time relationships from lunar two phase metallic particles /14310, 14163, 14003/.

Electron-microprobe and metallographic techniques are applied in an analysis of individual phases in two-phase metallic alpha + gamma particles and phosphide-metal particles separated magnetically or mechanically from three lunar soil samples. The interface equilibrium temperatures of the two-phase particles during their lunar residence are inferred from experimental Fe-Ni and Fe-Ni-P equilibrium diagrams. Times of equilibration are determined in some cases.

Axon, H. J.↗
NASA NTRS1974

Metal silicate relationships in Apollo 17 soils

A petrographic, metallographic, and electron probe study of particles from two Apollo 17 soils is reported. A mixing model for the formation of the Apollo 17 soils is proposed. It is found that equilibration temperatures for two-phase metal aggregates range from 375 to 475 C for metal-phosphide particles and from 480 to 630 C for alpha-gamma particles, and that the anorthositic soil particles contain metal of meteoritic Ni-Co content. The Camelot Crater and the Sculptured Hills soil compositions are discussed.

Goldstein, J. I.↗
NASA NTRS1977

The metallic microstructures and thermal histories of severely reheated chondrites

The metallographic structures of eight severely reheated chondrites - Farmington, Ramsdorf, Orvinio, Wickenburg, Lubbock, Rose City, Arapahoe, and Tadjera - were studied using optical, SEM and electron microprobe techniques. The following metallographic criteria were used to estimate the post-shock residual temperature of the chondrites: melted metal-troilite appearance, presence of martensite, phosphorus enrichment of metal and averaging of central metal grain compositions. The presence of phosphides and secondary kamacite are due to slow post-shock cooling rates. Ni rim gradients indicate both extensive remelting of metal grains and relatively fast cooling.

Smith, B. A.↗
NASA NTRS1969

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Groves, W. O.↗
NASA NTRS1978

Lightweight porous plastic plaque

The porosity and platability of various materials were investigated to determine a suitable substrate for nickel-plated electrodes. Immersion, ultrasonics, and flow-through plating techniques were tried using nonproprietary formulations, and proprietary phosphide and boride baths. Modifications to the selected material include variations in formulation and treatment, carbon loading to increase conductivity, and the incorporation of a grid. Problems to be solved relate to determining conductivities and porosities as a function of amount of nickel plated on the plastics; loading; charge and discharge curves of electrodes at different current densities; cell performance; and long-term degradation of electrodes.

Reid, M.↗
NASA NTRS1978

Modified silicon-germanium alloys with improved performance

This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

Pisharody, R. K.↗
NASA NTRS1980

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide.

Gatos, H. C.↗
NASA NTRS1982

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗