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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Texture Memory in Hexagonal Metals and Its Mechanism

Texture memory is a phenomenon in which retention of initial textures occurs after a complete cycle of forward and backward transformations, and it occurs in various phase-transforming materials including cubic and hexagonal metals such as steels and Ti and Zr alloys. Texture memory is known to be caused by the phenomena called variant selection, in which some of the allowed child orientations in an orientation relationship between the parent and child phases are preferentially selected. Without such variant selection, the phase transformations would randomize preferred orientations. In this article, the methods of prediction of texture memory and mechanisms of variant selections in hexagonal metals are explored. The prediction method using harmonic expansion of orientation distribution functions with the variant selection in which the Burgers orientation relationship, {110}β//{0001} α-hex <1$\bar{1}$1>β//$\langle2\bar{11}0\rangle$ α-hex , is held with two or more adjacent parent grains at the same time, called “double Burgers orientation relation (DBOR)”, is introduced. This method is shown to be a powerful tool by which to analyze texture memory and ultimately provide predictive capabilities for texture changes during phase transformations. Variation in nucleation and growth rates on special boundaries and an extensive growth of selected variants are also described. Analysis of textures of commercially pure Ti observed in situ by pulsed neutron diffraction reveals that the texture memory in CP-Ti is indeed quite well predicted by consideration of the mechanism of DBOR. The analysis also suggests that the nucleation and growth rates on the special boundary of 90° rotation about $\langle2\bar{11}0\rangle$ α-hex should be about three times larger than those of the other special boundaries, and the selected variants should grow extensively into not only one parent grain but also other grains in α-hex(hexagonal)→β(bcc) transformation. The model calculations of texture development during two consecutive cycles of α-hex→β→α-hex transformation in CP-Ti and Zr are also shown.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

42 ENGINEERING↗
DOE OSTI2022

A survey on processing-in-memory techniques: Advances and challenges

Processing-in-memory (PIM) techniques have gained much attention from computer architecture researchers, and significant research effort has been invested in exploring and developing such techniques. Increasing the research activity dedicated to improving PIM techniques will hopefully help deliver PIM’s promise to solve or significantly reduce memory access bottleneck problems for memory-intensive applications. We also believe it is imperative to track the advances made in PIM research to identify open challenges and enable the research community to make informed decisions and adjust future research directions. In this survey, we analyze recent studies that explored PIM techniques, summarize the advances made, compare recent PIM architectures, and identify target application domains and suitable memory technologies. We also discuss proposals that address unresolved issues of PIM designs (e.g., address translation/mapping of operands, workload analysis to identify application segments that can be accelerated with PIM, OS/runtime support, and coherency issues that must be resolved to incorporate PIM). We believe this work can serve as a useful reference for researchers exploring PIM techniques.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

JTAG-based PLC memory acquisition framework for industrial control systems

In industrial control systems (ICS), programmable logic controllers (PLC) are the embedded devices that directly control and monitor critical industrial infrastructure processes such as nuclear plants and power grid stations. Cyberattacks often target PLCs to sabotage a physical process. A memory forensic analysis of a suspect PLC can answer questions about an attack, including compromised firmware and manipulation of PLC control logic code and I/O devices. Given physical access to a PLC, collecting forensic information from the PLC memory at the hardware-level is risky and challenging. It may cause the PLC to crash or hang since PLCs have proprietary, legacy hardware with heterogeneous architecture. This paper addresses this research problem and proposes a novel JTAG (Joint Test Action Group)-based framework, Kyros, for reliable PLC memory acquisition. Kyros systematically creates a JTAG profile of a PLC through hardware assessment, JTAG pins identification, memory map creation, and optimizing acquisition parameters. It also facilitates the community of interest (such as ICS owners, operators, and vendors) to develop the JTAG profiles of PLCs. Further, we present a case study of Kyros implementation over Allen-Bradley 1756-A10/B to help understand the framework's application on a real-world PLC used in industry settings. The sample PLC memory dumps are shared with the research community to facilitate further research.

Rais, Muhammad Haris↗
DOE OSTI2022

A second-order distributed memory parallel fast sweeping method for the Eikonal equation

The Eikonal equation is used to calculate wave propagation and distance fields, and due to its complexity requires numerical treatment for its solution. In this work, we present a second-order distributed memory parallel fast sweeping method. The second-order solution switches on a two-point stencil when two upwind points are available, and reverts to first-order otherwise. In all examples, the second-order method improves the solution over the first-order, allowing for significant savings in memory while achieving the same accuracy. Parallelization over distributed memory saw good weak scaling with optimal convergence. The computational time for second-order was approximately 2.5 times slower than first-order, where the largest amount of mesh points ran on 144 cores (512 GB) was ≈20 billion. The savings in memory from the second-order method combined with the distributed memory algorithm result in the ability to solve problems much larger than are possible with the serial first-order method.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Hong-Ou-Mandel interference of single-photon-level pulses stored in independent room-temperature quantum memories

Abstract Quantum repeater networks require independent absorptive quantum memories capable of storing and retrieving indistinguishable photons to perform high-repetition entanglement swapping operations. The ability to perform these coherent operations at room temperature is of prime importance for the realization of scalable quantum networks. We perform Hong-Ou-Mandel (HOM) interference between photonic polarization states and single-photon-level pulses stored and retrieved from two sets of independent room-temperature quantum memories. We show that the storage and retrieval of polarization states from quantum memories does not degrade the HOM visibility for few-photon-level polarization states in a dual-rail configuration. For single-photon-level pulses, we measure the HOM visibility with various levels of background in a single polarization, single-rail QM, and investigate its dependence on the signal-to-background ratio. We obtain an HOM visibility of 43%, compared to the 48% no-memory limit of our set-up. These results allow us to estimate a 33% visibility for polarization qubits under the same conditions. These demonstrations lay the groundwork for future applications using large-scale memory-assisted quantum networks.

Physics↗
DOE OSTI2021

The neutrino gravitational memory from a core collapse supernova: phenomenology and physics potential

General Relativity predicts that the passage of matter or radiation from an asymmetrically-emitting source should cause a permanent change in the local space-time metric. This phenomenon, called the gravitational memory effect, has never been observed, however supernova neutrinos have long been considered a promising avenue for its detection in the future. With the advent of deci-Hertz gravitational wave interferometers, observing the supernova neutrino memory will be possible, with important implications for multimessenger astronomy and for tests of gravity. In this work, we develop a phenomenological (analytical) toy model for the supernova neutrino memory effect, which is overall consistent with the results of numerical simulations. This description is then generalized to several case studies of interest. We find that, for a galactic supernova, the dimensionless strain, h(t), is of order ~ 10 -22 - 10 -21 , and develops over a typical time scale that varies between ~ 0.1 - 10 s, depending on the time-evolution of the anisotropy of the neutrino emission. The characteristic strain, h c (f), has a maximum at a frequency f max ~ Script $\mathcal{O}$(10 -1 ) - Script $\mathcal{O}$(1) Hz. The detailed features of the time- and frequency-structure of the memory strain will inform us of the matter dynamics near the collapsed core, and allow to distinguish between different stellar collapse scenarios. Next generation gravitational wave detectors like DECIGO and BBO will be sensitive to the neutrino memory effect for supernovae at typical galactic distances and beyond; with Ultimate DECIGO exceeding a detectability distance of 10 Mpc

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Plasma phosphorylated tau217 strongly associates with memory deficits in the Alzheimer’s disease spectrum

Abstract Plasma phosphorylated tau (p-tau) biomarkers open unprecedented opportunities for identifying carriers of Alzheimer’s disease pathophysiology in early disease stages using minimally invasive techniques. Plasma p-tau biomarkers are believed to reflect tau phosphorylation and secretion. However, it remains unclear to what extent the magnitude of plasma p-tau abnormalities reflects neuronal network disturbance in the form of cognitive impairment. To address this question, we included 103 cognitively unimpaired elderly and 40 cognitively impaired, amyloid-β-positive individuals from the TRIAD cohort, in addition to 336 cognitively unimpaired and 216 cognitively impaired, amyloid-β-positive older adults from the BioFINDER-2 cohort. Participants had tau PET scans, amyloid PET scans or amyloid CSF, p-tau217, p-tau181 and p-tau231 blood measures, structural T1-MRI and cognitive assessments. In this cross-sectional study, we used regression models and correlation analyses to assess the relationship between plasma biomarkers and cognitive scores. Furthermore, we applied receiver operating characteristic curves to assess cognitive impairment across plasma biomarkers. Finally, we categorized participants into amyloid (A), p-tau (T1) and tau PET (T2) positive (+) or negative (−) profiles and ran non-parametric comparisons to assess differences across cognitive domains. We found that plasma p-tau217 was more associated with cognitive performance than p-tau181 and p-tau231 and that this relationship was particularly strong for memory scores (TRIAD: βp-tau217 = −0.53, βp-tau181 = −0.35 and βp-tau231 = −0.24; BioFINDER-2: βp-tau217 = −0.52, βp-tau181 = −0.24 and βp-tau231 = −0.29). Associations in amyloid-β-positive participants resembled these results, but other cognitive scores also showed strong associations in cognitively impaired individuals. Moreover, plasma p-tau217 outperformed plasma p-tau181 and plasma p-tau231 in identifying memory impairment (area under the curve values for TRIAD: p-tau217 = 0.86, p-tau181 = 0.77 and p-tau231 = 0.75; and for BioFINDER-2: p-tau217 = 0.86, p-tau181 = 0.76 and p-tau231 = 0.81) and in identifying executive function impairment only in the BioFINDER-2 cohort (p-tau217 = 0.82, p-tau181 = 0.76 and p-tau231 = 0.76). Lastly, we showed that subtle memory deficits were present in A+T1+T2− participants for plasma p-tau217 (P = 0.007) and plasma p-tau181 (P = 0.01) in the TRIAD cohort and for all biomarkers across cognitive domains in A+T1+T2− and A+T1+T2− individuals (P < 0.001 in all) in the BioFINDER-2 cohort. The A+T1+T2− individuals showed cognitive deficits in both cohorts (P < 0.001 in all). Together, our results suggest that plasma p-tau217 stands out as a biomarker capable of identifying memory deficits attributable to Alzheimer’s disease and that memory impairment certainly occurs in amyloid-β- and plasma p-tau-positive individuals who have no significant amounts of tau in the neocortex.

Neurosciences & Neurology↗
DOE OSTI2022

MemGaze: Rapid and Effective Load-Level Memory Trace Analysis

A major challenge of memory analysis tools is combining high-resolution analysis and low overhead measurement. Currently, hardware/software-based analysis of load-level sequences incurs time slowdowns of O(100×). We present MemGaze, a tool for low-overhead, high-resolution memory analysis. MemGaze uses Intel’s Processor Tracing (PT) instruction ptwrite to collect sampled and compressed memory address traces for load-level, sequence-aware analysis of data reuse. We describe multi-resolution analysis for locations vs. operations, accesses vs. spatio-temporal reuse, and reuse (distance, rate, volume) vs. access patterns. Both trace size and resolution are controllable. We use MemGaze to elucidate the memory effects of different data structures and algorithms. For sampled traces that are ˜1% of a full one, analysis metrics have 1-25% MAPE for histograms of varying dynamic sequence lengths. With current suboptimal kernel support (PT runs continuously), MemGaze’s time overhead is typically 10–95%; 7× at worst. However, when PT runs only during samples, overhead is 10–35% on memory intensive regions and correlates with executed ptwrites.

Kilic, Ozgur O.↗
DOE OSTI2023

IRIS-DMEM: Efficient Memory Management for Heterogeneous Computing

This paper proposes an efficient data memory management approach for the Intelligent RuntIme System (IRIS) heterogeneous computing framework along with new data transfer policies. IRIS provides a task-based programming model for extreme heterogeneous computing (e.g., CPU, GPU, DSP, FPGA) with support for today's most important programming languages (e.g., OpenMP, OpenCL, CUDA, HIP, OpenACC). However, the IRIS framework either forces the programmer to introduce data transfer commands for each task or relies on suboptimal memory management for automatic and transparent data transfers. The work described here extends IRIS with novel heterogeneous memory handling and introduces novel data transfer policies by employing the Distributed data MEMory handler (DMEM) for efficient and optimal movement of data among the various computing resources. The proposed approach achieves performance gains of up to 7× for tiled LU factorization and tiled DGEMM (i.e., matrix multiplication) benchmarks. Moreover, this approach also reduces data transfers by up to 71% when compared to previous IRIS heterogeneous memory management handlers. This work compares the performance results of the IRIS framework's novel DMEM with the StarPU runtime and MAGMA math library for GPUs. Experiments show a performance gain of up to 1.95× over StarPU and 2.1× over MAGMA.

Miniskar, Narasinga Rao↗
DOE OSTI2022

Image Gradient Decomposition for Parallel and Memory-Efficient Ptychographic Reconstruction

Ptychography is a popular microscopic imaging modality for many scientific discoveries and sets the record for highest image resolution. Unfortunately, the high image resolution for ptychographic reconstruction requires significant amount of memory and computations, forcing many applications to compromise their image resolution in exchange for a smaller memory footprint and a shorter reconstruction time. In this paper, we propose a novel image gradient decomposition method that significantly reduces the memory footprint for ptychographic reconstruction by tessellating image gradients and diffraction measurements into tiles. In addition, we propose a parallel image gradient decomposition method that enables asynchronous point-to-point communications and parallel pipelining with minimal overhead on a large number of GPUs. Our experiments on a Titanate material dataset (PbTiO3) with 16632 probe locations show that our Gradient Decomposition algorithm reduces memory footprint by 51 times. In addition, it achieves time-to-solution within 2.2 minutes by scaling to 4158 GPUs with a super-linear strong scaling efficiency at 364% compared to runtimes at 6 GPUs. This performance is 2.7 times more memory efficient, 9 times more scalable and 86 times faster than the state-of-the-art algorithm.

Wang, Xiao↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2025

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.

magnetic domain wall↗
DOE OSTI2025

Generalizing multiple memories from a single drive: The hysteron latch

Far-from-equilibrium systems can form memories of previous deformations or driving. In systems from sheared glassy materials to buckling beams to crumpled sheets, this behavior is dominated by return-point memory, in which revisiting a past extremum of driving restores the system to a previous state. Cyclic driving with both positive and negative strains forms multiple nested memories, as in a single-dial combination lock, while asymmetric driving (only positive strain) cannot. We study this case in a general model of hysteresis that considers discrete elements called hysterons. We show how two hysterons with a frustrated interaction can violate return-point memory, realizing multiple memories of asymmetric driving. This reveals a general principle for designing systems that store sequences of cyclic driving, whether symmetric or asymmetric. In disordered systems, asymmetric driving is a sensitive tool for the direct measurement of frustration.

Science & Technology - Other Topics↗
DOE OSTI2023

HBMax: Optimizing Memory Efficiency for Parallel Influence Maximization on Multicore Architectures

The goal of influence maximization is to select k most-influential vertices or seeds in a network, where influence is defined by a given diffusion process. The problem has a number of important applications such as viral marketing, information spread, and epidemic control. Although computing optimal seed set is NP-Hard, due to the submodular nature of the problem efficient approximation algorithms exist. However, even state-of-the-art parallel implementations are limited by a sampling step that incurs large memory footprints. This in turn limits the problem size reach and approximation quality. In this work, we study the memory footprint of the sampling process collecting reverse reachability information in the IMM algorithm over large real-world social networks. We present an adaptive and memory-efficient optimization approach for a state-of-the-art multi-threaded parallel influence maximization algorithm. Our approach,HuffMax, uses a portion of the reverse reachable (RR) sets collected by the algorithm to learn the characteristics of the graph. Then, it compresses the intermediate reverse reachability information with Huffman coding, and queries directly on the compressed data to preserve the memory savings obtained through compression. We also propose an efficient sampling strategy based on the distribution of RR sets, which can further reduce the computation time for typical social networks with long-tail distributions. Considering a NUMA architecture, we scale up our solution on 128-core CPUs and reduce the memory footprint by up to 45.7% with negligible time overhead (or even faster) and without perceivable loss of accuracy.

Chen, Xinyu↗
DOE OSTI2026

The Memory Scaling of Reverse-Mode Differentiation in Particle Accelerator Simulations with Space Charge

The recent development of differentiable simulation codes for particle accelerators has enabled gradient-based workflows that promise finer control and more realistic modeling of accelerator facilities. However, when using reverse-mode automatic differentiation, the memory usage continuously increases during the simulation, and can potentially exceed the available hardware memory - especially when costly space charge computation is included. To study the memory requirements for differentiable simulations, we have implemented space charge in Cheetah, a PyTorch-based beam tracking code that supports reverse-mode differentiation. We find that the memory usage for reverse-mode differentiation grows linearly with the number of macroparticles and cells, and that it is proportional to the number of space charge kicks involved in the simulation. This general scaling can be used to evaluate whether a given differentiable simulation is feasible given hardware memory constraints.

Dhamrait, Arjun↗
DOE OSTI2021

Preexisting memory CD4 + T cells contribute to the primary response in an HIV-1 vaccine trial

Naive and memory CD4 + T cells reactive with human immunodeficiency virus type 1 (HIV-1) are detectable in unexposed, unimmunized individuals. The contribution of preexisting CD4 + T cells to a primary immune response was investigated in 20 HIV-1–seronegative volunteers vaccinated with an HIV-1 envelope (Env) plasmid DNA prime and recombinant modified vaccinia virus Ankara (MVA) boost in the HVTN 106 vaccine trial (clinicaltrials.gov NCT02296541). Prevaccination naive or memory CD4 + T cell responses directed against peptide epitopes in Env were identified in 14 individuals. After priming with DNA, 40% (8/20) of the elicited responses matched epitopes detected in the corresponding preimmunization memory repertoires, and clonotypes were shared before and after vaccination in 2 representative volunteers. In contrast, there were no shared epitope specificities between the preimmunization memory compartment and responses detected after boosting with recombinant MVA expressing a heterologous Env. Preexisting memory CD4 + T cells therefore shape the early immune response to vaccination with a previously unencountered HIV-1 antigen.

60 APPLIED LIFE SCIENCES↗