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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Comparative Studies of Optoelectronic Properties, Structures, and Surface Morphologies for Phosphorus-Doped Poly-Si/SiOx Passivating Contacts

We investigated and compared optoelectronic properties, crystallographic structures, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)). Across all these deposition technologies, a similar trend is observed: higher diffusion temperatures yield films that are more crystalline but have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the roughest surface and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the smoothest surface for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films has already had some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness.

crystallographic structures↗
DOE OSTI2019

High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects

The self-heating effects of optoelectronic switches based on vertical high-voltage structures with p–n junctions (Vertical Photoactivated Semiconductor Switches, VPSS) operating in the high-frequency mode are theoretically studied for the first time. It is shown that the strong temperature dependence of the control-radiation absorbance κ(T) is a major factor controlling the maximum switching frequency f{sub max} and the corresponding maximum crystal temperature T{sub max}, as well as the temperature T and current density j distributions over the device area. Two-dimensional analysis of the simplest electrothermal model of a VPSS embedded into a double coaxial forming line shows that an increase in the switching frequency f leads to current displacement to the device periphery where the temperature is minimum. However, the T and j distributions over the device area remain stable at f < f{sub max} and T < T{sub max}. Certainly, f{sub max} and T{sub max} depend on the control-radiation pulse energy, pulse switching power, and heat-removal conditions. For the VPSS based on indirect-gap semiconductors (Si, SiC), they vary within 20–120 kHz and 120–160°C which is quite sufficient for practical applications. However, VPSSs based on direct-gap semiconductors (GaAs, InP) are in fact inapplicable to operation in high-frequency modes due to the fact that the dependence κ(T) is too sharp.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Self-Generation of Chaotic Microwave Signal in Spin Wave Optoelectronic Generator

Abstract—The self-generation of a chaotic microwave signal in a spin-wave optoelectronic generator has been experimentally investigated for the first time. The generator was a ring circuit, in the microwave path of which there was a spin-wave delay line on the film of an yttrium iron garnet (YIG) and a microwave amplifier. The optical path contained a fiber optic delay line. The nonlinear element of the generator was a film of YIG, which worked under the conditions of four-wave parametric interaction of spin waves. It has been shown that it is possible to generate monochromatic, periodic, quasi-periodic, and chaotic microwave signals by controlling the gain coefficient of the ring. The parameters characterizing the chaotic signal that are generated by the ring have been determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Optoelectronic properties of bent two-dimensional materials from first-principles methods combined with machine learning

A material’s interaction with light is highly relevant in the design of nanoelectronic devices such as photodiodes, solar cells, photocatalytic cells, phototransistors, and photodetectors. The interaction of a material with light can be altered by mechanical deformation. Fine tuning of the optical properties can be achieved by mechanical bending that alters the electronic structure. Optical properties strongly depend on band gaps, therefore any alteration in the band structure results in a changed optical response of the material. The impact of bending was explored in this project. The goal of this project was to assess the impact of mechanical bending of two-dimensional transition metal dichalcogenides on their optoelectronic properties, using first-principles methods. These first-principles approximations are largely built upon many-body theory for the optical properties of magnetic and topological nanoribbons. GW-BSE is standard for optical absorption, but it is less practical for collective excitations as it was shown in model systems. Time-dependent density functional theory, however, has better promises for collective excitations in low-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hybrid Metal Halides: Advancing Optoelectronic Materials (Final Technical Report)

Hybrid metal halides, particularly main group halide perovskites, are a unique class of materials that offer exceptional optoelectronic properties along with a remarkable materials design space. Initial research on this class of materials was driven by the ability of the prototype hybrid 3D perovskite-structured compound methylammonium lead iodide to function as the active layer in thin film solar cells. It is now known that this class of materials comprise a large family with tunable band gaps, relatively high charge carrier mobilities in both single crystal and polycrystalline forms, and relatively low concentrations of (deleterious) electrically active states within the band gap. Beyond applications in solar cells, the potential of these materials has been extended to emitters in light emitting diodes, and active components of radiation detectors. Complementing new functionality, the design space for hybrid metal halides continues to increase with discovery of new structural motifs. In this project, the combination of organic and inorganic functionalities has been employed to open pathways to the design and synthesis new, functional hybrid metal halides. Beyond the simple perovskites, Ruddlesden-Popper and Dion-Jacobsen compounds, and other variants, such as the newly advanced “hollow” perovskites have been studied. The materials have provided routes to understanding the unique electronic properties of hybrid metal halides because of their natural quantum well structures as well as other means of controlling band gaps and band dispersions. Understanding these materials, including the design rules for their formation, their structures and compositions in bulk and in thin films form, and the role of local (non-crystallographic) structure has an important aspect of this endeavor. The goal of advancing new materials and new fundamental understanding within this deceptively simple, yet fascinating class of compounds, so richly endowed with interesting and useful functionality, has been fulfilled.

36 MATERIALS SCIENCE↗
NASA NTRS2000

Optoelectronic Devices with Complex Failure Modes

This part of the NSREC-2000 Short Course discusses radiation effects in basic photonic devices along with effects in more complex optoelectronic devices where the overall radiation response depends on several factors, with the possibility of multiple failure modes.

optoelectronics space radiation↗
NASA NTRS2003

Stabilizing an optoelectronic microwave oscillator with photonic filters

This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

Atomic clocks electromagnetically induced transpar↗
NASA NTRS2019

Space Flight Optoelectronics and Photonics Qualification

The Photonics group top level processes regarding development and qualification of space flight hardware for optoelectronic components along with our contributions and successes with LIDAR systems, space flight reliability heritage, and our testing capabilities are conveyed with this power point presentation.

Optical Systems↗
NASA NTRS2020

Space Flight LiDARs, Navigation & Science Instrument Implementations: Lasers, Optoelectronics, Integrated Photonics, Fiber Optic Subsystems and Components

For the past 25 years, the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center's Photonics Group in the Engineering Directorate has been substantially contributing to the flight design, development, production, testing and integration of many science and navigational instruments. The Moon to Mars initiative will rely heavily upon utilizing commercial technologies for instrumentation with aggressive schedule deadlines. The group has an extensive background in screening, qualifying, development and integration of commercial components for spaceflight applications. By remaining adaptable and employing a rigorous approach to component and instrument development, they have forged and fostered relationships with industry partners. They have been willing to communicate lessons learned in packaging, part construction, materials selection, testing, and other facets of the design and production process critical to implementation for high-reliability systems. As a result, this successful collaboration with industry vendors and component suppliers has enabled a history of mission success from the Moon to Mars (and beyond) while balancing cost, schedule, and risk postures. In cases where no commercial components exist, the group works closely with other teams at Goddard Space Flight Center and other NASA field centers to fabricate and produce flight hardware for science, remote sensing, and navigation applications. Summarized here is the last ten years of instrumentation development lessons learned and data collected from the subsystems down to the optoelectronic component level.

Detectors↗
NASA NTRS2020

Optoelectronics for Space Flight Instruments

The Photonics group top level processes regarding development and qualification of space flight hardware for optoelectronic components and optical systems along with our contributions and successes with LIDAR systems, space flight reliability heritage, and our testing capabilities are conveyed with this power point presentation.

Spaceflight↗
DOE OSTI2018

Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot-MoS 2 Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Atomically thin transition metal dichalcogenides (TMDCs) have intriguing nanoscale properties like high charge mobility, photosensitivity, layer-thickness-dependent bandgap, and mechanical flexibility, which are all appealing for the development of next generation optoelectronic, catalytic, and sensory devices. Their atomically thin thickness, however, renders TMDCs poor absorptivity. For this study, bilayer MoS 2 is combined with core-only CdSe QDs and core/shell CdSe/ZnS QDs to obtain hybrids with increased light harvesting and exhibiting interfacial charge transfer (CT) and nonradiative energy transfer (NET), respectively. Field-effect transistors based on these hybrids and their responses to varying laser power and applied gate voltage are investigated with scanning photocurrent microscopy (SPCM) in view of their potential utilization in light harvesting and photodetector applications. CdSe–MoS 2 hybrids are found to exhibit encouraging properties for photodetectors, like high responsivity and fast on/off response under low light exposure while CdSe/ZnS–MoS 2 hybrids show enhanced charge carrier generation with increased light exposure, thus suitable for photovoltaics. While distinguishing optically between CT and NET in QD–TMDCs is nontrivial, it is found that they can be differentiated by SPCM as these two processes exhibit distinctive light-intensity dependencies: CT causes a photogating effect, decreasing the photocurrent response with increasing light power while NET increases the photocurrent response with increasing light power, opposite to CT case.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Highly Anisotropic Quasi‐Direct Organic Metal Halide Hybrids: A Platform for Polarization‐Sensitive Optoelectronics

Low-dimensional organic–inorganic metal halide hybrids (OMHHs) exhibit remarkable optical properties and enhanced environmental stability. We investigate a 1D OMHH with formula C 4 N 2 H 14 PbBr 4 , consisting of Pb–Br chains separated by organic cations, which shows a large Stokes shift (0.83 eV) and broadband emission. Through first-principles calculations and polarized Raman spectroscopy, we characterize the material's vibrational properties and identify the specific phonon modes that drive exciton self-trapping. Our novel GW/Bethe-Salpeter equation force formalism reveals that low-frequency phonons (∼ 100 cm −1 , primarily involving Pb–Br motions) couple strongly with excitons, with a remarkably high Huang-Rhys factor of 137 ± 4, and gives a pathway for ultrafast structural analysis during the absorption process. This phonon-exciton coupling mechanism explains the material's broadband emission and provides a pathway for controlling optical properties through vibrations and for tuning vibrations through optical excitations. The material also exhibits highly anisotropic optical properties and electronic transport, with bands that are dispersive along the Pb–Br chains but nearly flat in perpendicular directions, resulting in direction-dependent electrical conductivity that is calculated to be an order of magnitude higher along the chain direction and consistent with measurements. These combined properties make this system an excellent platform for polarization-sensitive optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Transparent Electrodes for Efficient Optoelectronics

With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

Morales‐Masis, Monica↗