The effects of TID on wear-out of advanced flash memories
Explore the source record for details and available documents.
nonvolatile memories↗
SEARCH · Engineering Papers
Results for “nonvolatile memory”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories
This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.
3-D NAND flash↗
Feedforward, high density, programmable read only neural network based memory system
Neural network-inspired, nonvolatile, programmable associative memory using thin-film technology is demonstrated. The details of the architecture, which uses programmable resistive connection matrices in synaptic arrays and current summing and thresholding amplifiers as neurons, are described. Several synapse configurations for a high-density array of a binary connection matrix are also described. Test circuits are evaluated for operational feasibility and to demonstrate the speed of the read operation. The results are discussed to highlight the potential for a read data rate exceeding 10 megabits/sec.
Daud, Taher↗
Overview of Radiation Tolerant Unlimited Write Cycle Non-Volatile Memory
A new concept in avionics development, X2000, is described.
Nonvolatile memory GMRAM FERAM CRAM X2000 Unlimite↗
Memory Switches Based On MnO2-x Thin Films
Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.
Ramesham, Rajeshuni↗
Advanced compact holographic data storage system
In this paper, recent technology progress developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition systems as a high density, high transfer rate memory bank will also be discussed.
holographic↗
Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.
nonvolatile memory↗
Implementation of Ferroelectric Memories for Space Applications
Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.
Philpy, Stephen C.↗
PUF-Based Two-Factor Authentication Protocol for Securing the Power Grid Against Insider Threat
Recent advances in smart grid technologies have enabled additional distributed control paradigms that allow more efficient and reliable operation. However, this creates new security concerns for the grid, such as attackers using spoofed grid control devices to generate false measurements. This paper introduces a two-factor authentication protocol leveraging standard public-key cryptography as one authentication factor and a hardware-based fingerprint, known as a Physical Unclonable Function, as a second authentication factor. This protocol incurs a small overhead and prevents cyber-attacks even when an adversary is able to compromise the cryptographic keys stored in the non-volatile memory of an intelligent control device.
42 ENGINEERING↗
Non Volatile Flash Memory Radiation Tests
Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.
single event upset results↗
Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions
Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.
CMOS↗
Spin–orbit torques in structures with asymmetric dusting layers
Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films
The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al 1–x B x N, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al 1–x B x N films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.
36 MATERIALS SCIENCE↗
First-principles study and experimental characterization of metal incorporation in germanium telluride
Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.
36 MATERIALS SCIENCE↗
Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering
Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.
36 MATERIALS SCIENCE↗
Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.
36 MATERIALS SCIENCE↗
Wake up and retention in zinc magnesium oxide ferroelectric films
Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure. Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire with the crystallographic c-axis out of plane. At room temperature, the remanent polarization is ~80 μC/cm 2 and the coercive field is ~3 MV/cm. The coercive field is strongly temperature dependent up to 240 °C with a pseudo-activation energy of 23 ± 0.3 meV, suggesting that polarization reversal occurs through an extrinsic process such as domain wall motion. ZMO films can be woken up in 20 electric field cycles on driving near the coercive field; they wake up in a single loop at fields in excess of 4 MV/cm. A thermally activated fluid imprint process, with a pseudo-activation energy of 67 ± 8 meV, enlarges the coercive field by several hundred kV cm –1 after switching the polarization. Additionally, ZMO films exhibit excellent retention characteristics; no reduction in the polarization is observed up to 1000 h from room temperature to 200 °C bakes. Here, this current early generation of ZMO films can survive several thousand switching cycles before dielectric breakdown occurs.
36 MATERIALS SCIENCE↗
Effects of carbon concentration on the local atomic structure of amorphous GST
Ge-Sb-Te (GST) alloys are leading phase-change materials for data storage due to the fast phase transition between amorphous and crystalline states. Ongoing research aims at improving the stability of the amorphous phase to improve retention. This can be accomplished by the introduction of carbon as a dopant to Ge 2 Sb 2 Te 5 , which is known to alter the short- and mid-range structure of the amorphous phase and form covalently bonded C clusters, both of which hinder crystallization. The relative importance of these processes as a function of C concentration is not known. Here we used molecular dynamics simulation based on density functional theory to study how carbon doping affects the atomic structure of GST-C. Carbon doping results in an increase in tetrahedral coordination, especially of Ge atoms, and this is known to stabilize the amorphous phase. We observe an unexpected, non-monotonous trend in the number of tetrahedral bonded Ge with the amount of carbon doping. Our simulations show an increase in the number of tetrahedral bonded Ge up to 5 at.% C, after which the number saturates and begins to decrease above 14 at.% C. The carbon atoms aggregate into clusters, mostly in the form of chains and graphene flakes, leaving less carbon to disrupt the GST matrix at higher carbon concentrations. Different degrees of carbon clustering can explain divergent experimental results for recrystallization temperature for carbon doped GST.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗