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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Resistance of Boron Nitride Nanotubes to Radiation-Induced Oxidation

We present unprecedented results on the damage thresholds and pathways for boron nitride nanotubes (BNNT) under the influence of energetic electrons in an oxidative gas environment, using an environmental aberration-corrected electron microscope over a range of oxygen pressures. We observe a damage cascade process that resists damage until a higher electron dose, compared with carbon nanotubes, initiating at defect-free BNNT sidewalls and proceeding through the conversion from crystalline nanotubes to amorphous boron nitride (BN), resisting oxidation throughout. We compare with prior results on the oxidation of carbon nanotubes and present a model that attributes the onset of damage in both cases to a physisorbed oxygen layer that reduces the threshold for damage onset. Surprisingly, increased temperatures offer protection against damage, as do electron dose rates that significantly exceed the oxygen dose rates, and our model attributes both effects to a physisorbed oxygen population.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Multi-Scale Modeling for Plasma-Enhanced Ammonia Decomposition over Carbides and Nitrides

Ammonia is a carbon-free hydrogen carrier, but its decomposition typically requires high temperatures over costly Ru-based catalysts due to the large barrier for N≡N bond formation. We develop a multiscale framework combining density functional theory, zero-dimensional plasma kinetics, and microkinetic modeling to elucidate how non-thermal plasma (NTP) enables low-temperature NH 3 decomposition over Co-based carbides and nitrides, benchmarked against Ru and Co. Under thermal conditions, all catalysts are limited by N≡N bond formation, with Co 3 C(001) most active owing to its negatively charged surface, strong N* binding, and low activation barriers of N≡N bond formation. Plasma-induced vibrational excitation of NH 3 and its reactive radicals promotes a radical-driven •NH 2 –N* coupling pathway that dominates on Co 3 C(001) and Co 3 N(001), shifting the rate-limiting step to NH 3 (v1) dissociation, increasing turnover frequencies by up to 6 orders of magnitude, and reducing the temperature needed to reach a turnover frequency of 5 s –1 from >680 °C (Ru and Co under thermal condition) to 267 °C (Co 3 C) and 415 °C (Co 3 N). These results identify Co-based carbides and nitrides as promising plasma-active catalysts for energy-efficient hydrogen production from ammonia.

ammonia decomposition↗
DOE OSTI2024

Unraveling the Nature of Lasing Emission from Hybrid Silicon Nitride and Colloidal Nanocrystal Photonic Crystals with Low Refractive Index Contrast

Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.

BIC Lasing↗
DOE OSTI2024

Influence of Carbon-Nitride Dot-Emitting Species and Evolution on Fluorescence-Based Sensing and Differentiation

Carbon dots have attracted widespread interest for sensing applications based on their low cost, ease of synthesis, and robust optical properties. We investigate structure–function evolution on multiemitter fluorescence patterns for model carbon-nitride dots (CNDs) and their implications on trace-level sensing. Hydrothermally synthesized CNDs with different reaction times were used to determine how specific functionalities and their corresponding fluorescence signatures respond upon the addition of trace-level analytes. Archetype explosives molecules were chosen as a testbed due to similarities in substituent groups or inductive properties (i.e., electron withdrawing), and solution-based assays were performed using ratiometric fluorescence excitation–emission mapping (EEM). Analyte-specific quenching and enhancement responses were observed in EEM landscapes that varied with the CND reaction time. We then used self-organizing map models to examine EEM feature clustering with specific analytes. Finally, the results reveal that interactions between carbon-nitride frameworks and molecular-like species dictate response characteristics that may be harnessed to tailor sensor development for specific applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Synthesis and Characterization of a Bridging Cerium(IV) Nitride Complex

Complexes featuring lanthanide–ligand multiple bonds are rare and highly reactive. They are important synthetic targets to understand 4f/5d-bonding in comparison to d-block and actinide congeners. Herein, the isolation and characterization of a bridging cerium(IV)-nitride complex: [(TriNOx)Ce(Li 2 μ-N)Ce(TriNOx)][BAr F 4 ] is reported, the first example of a molecular cerium-nitride. The compound was isolated by deprotonating a monometallic cerium(IV)-ammonia complex: [Ce IV (NH 3 )(TriNOx)][BAr F 4 ]. The average Ce=N bond length of [(TriNOx)Ce(Li 2 μ-N)Ce(TriNOx)][BAr F 4 ] was 2.117(3) Å. Vibrational studies of the 15 N-isotopomer exhibited a shift of the Ce=N=Ce asymmetric stretch from ν = 644 cm –1 to 640 cm –1 , and X-ray spectroscopic studies confirm the +4 oxidation state of cerium. Furthermore, computational analyses showed strong involvement of the cerium 4f shell in bonding with overall 16% and 11% cerium weight in the σ- and π-bonds of the Ce=N=Ce fragment, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Photodriven Ammonia Synthesis from N 2 and H 2 : Recycling of a Molecular Molybdenum Nitride

Here, the synthesis of ammonia from its elements, N 2 and H 2 , is the most atom-economical and thermodynamically preferred route but presents a high kinetic barrier and thus is rare using molecular compounds. Irradiation of a molecular molybdenum nitride prepared from N 2 cleavage with visible light in the presence of an iridium photocatalyst and 1–4 atm of H 2 produced high yields of ammonia along with the formation of a cationic, formally molybdenum(VI) pentahydride as the major molybdenum-containing product. Continued irradiation of the molybdenum hydride under an N 2 atmosphere resulted in regeneration of the molybdenum nitride that was recycled and used for additional hydrogenation to generate more ammonia, demonstrating superstoichiometric batch ammonia synthesis using only N 2 and H 2 with molecular compounds under ambient conditions.

Hydrogenation↗
DOE OSTI2026

Hydrosilylation of a Molecular Molybdenum Nitride Provides Mechanistic Insights into Photodriven Ammonia Synthesis from N 2 and H 2

Addition of Ph 2 SiH 2 to [(depe) 2 Mo(N)][BAr F 4 ] (depe = 1,2-bis(diethylphosphino)ethane, BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) at 60 °C generated the silyl imido molybdenum hydride complex, trans - [(depe) 2 Mo(NSiHPh 2 )H][BAr F 4 ], a surrogate for a proposed intermediate complex in the photodriven hydrogenation to free ammonia. Irradiation of a THF solution of trans -[(depe) 2 Mo(NSiHPh 2 )H]- [BAr F 4 ] with blue light under H 2 produced free amine along with [(depe) 2 MoH 5 ][BAr F 4 ] in 76% yield. This transformation occurred in the absence of a precious metal photocatalyst, suggesting that it was needed only for the initial addition of H 2 to the molybdenum nitride during the first N−H bond-forming step in the photodriven hydrogenation. Deuterium labeling and crossover studies support concerted Si−H bond addition across the Mo≡N bond, enabled by the nucleophilicity of the nitride. Subsequent hydrogenation involves an intramolecular H migration from Mo to the imido ligand, as supported by electronic absorption spectroscopy, transient absorption spectroscopy, initial rate measurements, and deuterium kinetic isotope effect measurements. These findings provide insights into the photodriven hydrogenation of [(depe) 2 Mo(N)][BAr F 4 ] to ammonia and the role of the photocatalyst in this transformation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Synthesis pathways to thin films of stable layered nitrides

Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin-film deposition methods with rapid condensation of vapour precursors can readily synthesize metastable phases but often struggle to yield the thermodynamic ground state. Growing thermodynamically stable structures using kinetically limited synthesis methods is important for practical applications in electronics and energy conversion. Here, in this study, we reveal a synthesis pathway to thermodynamically stable, ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapour precursors leads to a 3D long-range-disordered MgMoN 2 thin-film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN 2 , MgWN 2 and MgTa 2 N 3 , and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Exploring the phase space of Zn 2 SbN 3 , a novel semiconducting nitride

The novel semiconductor Zn 2 SbN 3 is one of a growing list of ternary nitrides with promise for optoelectronic and energy applications. Previous work by Arca et al. [Materials Horizons, 2019, 6, 1669–1974] first reported synthesis of this material, but did not explore the effects of growth conditions on material formation. In this work, we present a semi-automated study of the relationship between growth conditions and crystallinity via high-throughput RF sputtering and a custom X-ray diffraction analysis routine. Zn 2 SbN 3 is found to crystallize in a wide range of growth conditions, and the formation of several contaminant phases is examined. Electron microscopy of these secondary phases, caused both by off-stoichiometry and by growth conditions, provides insight into the growth mechanisms of Zn 2 SbN 3 . Furthermore, computational work relates this material to other Zn-based ternary nitrides and offers an explanation for the difficulty of growing cation-ordered material despite the wide range of growth conditions explored.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Low-temperature access to active iron and iron/nickel nitrides as potential electrocatalysts for the oxygen evolution reaction

Low-temperature, scalable routes to transition metal nitride (TMN) nanoparticles are desirable for a wide range of applications, yet their synthesis typically requires high temperatures (>350 °C) and reactive gas environments (e.g., NH 3 or H 2 /N 2 ). Here, we report a colloidal synthesis of mono- and bimetallic TMN nanoparticles using preformed metal carbonyl clusters as precursors and urea or diethylenetriamine (DETA) as nitrogen sources. This strategy enables access to size-controlled, phase-pure ε-Fe 3 N x and Fe y Ni 3−y N nanoparticles at temperatures below 300 °C, without the need for flowing reactive gas atmospheres. By systematically varying nitrogen precursor, reaction temperature, and cluster identity, we achieve tunable nitrogen stoichiometry (x) and phase selectivity between N-rich and N-poor TMNs. Structural and magnetic characterization confirms clean decomposition of the precursors and phase formation consistent with controlled nitridation at the nanoscale. Preliminary electrochemical measurements in alkaline media demonstrate that these materials exhibit oxygen evolution reaction (OER) overpotentials comparable to RuO 2 , highlighting their viability for future electrocatalytic applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes

Until recently, the electrical efficiency of green nitride light-emitting diodes (LEDs) was considerably lower than that of blue LEDs. This is particularly surprising as one would expect a reduced forward voltage with increasing emission wavelength. In this paper, we theoretically investigated the impact of the number of quantum wells on the forward voltage of III-nitride LEDs with x = 0.15 (blue) and x = 0.24 (green) In x Ga1–xN QWs. The simulated dependence of current density (J) on applied diode bias (V) shows a significant increase of 1.9 V in the forward voltage between one and five quantum well (QW) c-plane green LED structures. Artificially turning off the polarization fields in the simulation does not entirely suppress this effect. Due to the large band offsets in the green LED multiple QW stack, simulations indicate a sequential band filling of the QW sequence. Furthermore, this mechanism should not be limited to c-plane LEDs and could also be present in nonpolar or semipolar devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Experimental equation of state of 11 lanthanide nitrides (NdN to LuN) and pressure induced phase transitions in NdN, SmN, EuN, and GdN

Through an extensive data analysis of powder X-ray diffraction data obtained at pressures up to at least 78 GPa, we report the experimental equations of state for all lanthanide nitrides between NdN and LuN, excluding the radioactive Pm. By fitting the obtained unit cell volumes as a function of pressure with the third order Birch–Murnaghan equation of state, we find that the bulk modulus increases with an increasing lanthanide number from K 0 = 146(12) GPa for NdN to 182(7) GPa in EuN. Hereafter, the bulk modulus reaches a plateau for the rest of the series except for TmN which has a lower bulk modulus. We find that the first derivative of the bulk modulus is around 4 for all compounds except TbN, which displays a significantly different compression behavior. In addition, we find a B1 to B10 pressure-induced phase transition in NdN, SmN, EuN, and GdN at increasingly higher pressures. In fact, we observe that the onset pressure of the phase transition increases linearly with Ln atomic number. From TbN and onwards, we do not observe any sign of a B1 to B10 transition indicating that the transition pressure exceeds the studied pressure range. Therefore, we believe that, for the heavier lanthanides, the linear relationship between the onset pressure and the lanthanide number does not hold and even higher pressures are needed to observe the transition. This coherent study of the series of lanthanide nitrides offers a unique opportunity for benchmark studies of computational methods applied to compounds with 4f electrons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Composition Dependent Electrochemical Properties of Earth-Abundant Ternary Nitride Anodes

Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we investigate the previously unexplored electrochemical properties of earth-abundant and tunable Zn 1-x Sn 1+x N 2 (x = -0.4 to x = 0.4) thin films, which show high electrical conductivity and high gravimetric capacity for Li insertion. Enhanced cycling performance is achieved compared to previously published end-members Zn 3 N 2 and Sn 3 N 4 , showing decreased irreversible loss and increased total capacity and cycle stability. The average reversible capacity observed is >1050 mAh/g for all compositions and 1220 mAh/g for Zn-poor (x = 0.2) films. Extremely Zn-rich films (x = -0.4) show improved adhesion; however, Zn-rich films undergo a phase transformation on the first cycle. Zn-poor and stoichiometric films do not exhibit significant phase transformations which often plague nitride materials and show no required overpotential at the 0.5 V plateau. Cation composition x is explored as a mechanism for tuning relevant mechanical and electrochemical properties, such as capacity, overpotential, phase transformation, electrical conductivity, and adhesion. The lithiation/delithiation experiments confirm the reversible electrochemical reactions. Without any binding additives, the as-deposited electrodes delaminate resulting in fast capacity degradation. We demonstrate the mechanical nature of this degradation through decreased electrode thinning, resulting in cells with improved cycling stability due to increased mechanical stability. Combining composition and electrochemical analysis, this work demonstrates for the first time composition dependent electrochemical properties for the ternary Zn 1-x Sn 1+x N 2 and proposes earth-abundant ternary nitride anodes for increased reversible capacity and cycling stability.

25 ENERGY STORAGE↗
DOE OSTI2024

GdWN 3 is a nitride perovskite

Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd 3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN 3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN 3-y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd 2-x W x N 3-y O y with oxygen content y < 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN 3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN 3-y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties.

14 SOLAR ENERGY↗
DOE OSTI2025

Deep chalcogen donors and electron localization in aluminum nitride

Abstract We show with hybrid density functional theory calculations that chalcogen donors other than oxygen (i.e. S N , Se N , and Te N ) give rise to deep donor states in aluminum nitride. These donors trap a localized electron in their neutral charge state, leading to deep ( + / 0 ) donor levels that are 0.45 eV or more from the conduction-band edge. As such, this behavior is distinct from the DX behavior leads to deep (+/−) levels which affects other donors such as O N and Si Al . We highlight how these results hint at the formation of small electron polarons in AlN, which are found to be unstable in the bulk, but metastable when bound to donor dopants like Si Al and the chalocogens, with activation energies on the order of 0.2–0.3 eV. These results indicate that S, Se, and Te are not shallow donor dopants in aluminum nitride and identify origins of the experimentally observed ∼200–300 meV activation energies for dopant activation in donor-doped samples.

aluminum nitride↗
DOE OSTI2022

Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies. The growth process is characterised using an in situ cycle-by-cycle methodology to identify the main factors which underpin optimal material growth. The role of co-reactant dosing and substrate temperature is analysed in detail to demonstrate the impact these parameters have on the overall composition of the film. The in situ approach, combined with high-energy synchrotron-based photoemission studies of the resulting films, enables understanding of the bulk chemical properties without need for physical removal of material by sputtering. The results provide an insight into optimising plasma assisted ALD processes for deposition of cobalt nitride, and strategies for minimizing carbon incorporation into the film from the precursor ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The local ordering of polar solvents around crystalline carbon nitride nanosheets in solution

The crystalline graphitic carbon nitride, poly-triazine imide (PTI) is highly unusual among layered materials since it is spontaneously soluble in aprotic, polar solvents including dimethylformamide (DMF). The PTI material consists of layers of carbon nitride intercalated with LiBr. When dissolved, the resulting solutions consist of dissolved, luminescent single to multilayer nanosheets of around 60–125 nm in diameter and Li+ and Br- ions originating from the intercalating salt. To understand this unique solubility, the structure of these solutions has been investigated by high-energy X-ray and neutron diffraction. Although the diffraction patterns are dominated by inter-solvent correlations there are clear differences between the X-ray diffraction data of the PTI solution and the solvent in the 4–6 Å -1 range, with real space differences persisting to at least 10 Å. Structural modelling using both neutron and X-ray datasets as a constraint reveal the formation of distinct, dense solvation shells surrounding the nanoparticles with a layer of Br - close to the PTI-solvent interface. This solvent ordering provides a configuration that is energetically favourable underpinning thermodynamically driven PTI dissolution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗