Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “low memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Low-overhead mechanism to detect address faults in ECC-protected memories

Embodiments are generally directed to a low-overhead mechanism to detect address faults in ECC-protected memories. An embodiment of an apparatus includes a memory array; an error correction code (ECC) encoder for the memory array to encode ECC values based on a data value and a respective address value for the data value; and an ECC decoder for the memory array to decode ECC values that are based on data values and respective addresses for the data values; wherein the apparatus is to detect and correct an error in an address value based on an ECC value, address value, and data value stored in the memory.

Kwon, Kon-Woo↗
DOE OSTI2015

Formation of microcraters and hierarchically-organized surface structures in TiNi shape memory alloy irradiated with a low-energy, high-current electron beam

The regularities of surface cratering in TiNi alloy irradiated with a low-energy, high-current electron beam (LEHCEB) in dependence on energy density and number of pulses are studied. LEHCEB processing of TiNi samples was carried out using RITM-SP facility. Energy density E{sub s} was varied from 1 to 5 J/cm{sup 2}, pulse duration was 2.5–3.0 μs, the number of pulses n = 1–128. The dominant role of non-metallic inclusions [mainly, TiC(O)] in the nucleation of microcraters was found. It was revealed that at small number of pulses (n = 2), an increase in energy density leads both to increasing average diameter and density of microcraters. An increase in the number of pulses leads to a monotonic decrease in density of microcraters, and, therefore, that of the proportion of the area occupied by microcraters, as well as a decrease in the surface roughness. The multiple LEHCEB melting of TiNi alloy in crater-free modes enables to form quasi-periodical, hierarchically-organized microsized surface structures.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Low-Voltage Protection For Volatile Computer Memories

Short-circuit current provides minimum memory power. Protective circuit includes dc-to-dc converter that supplies keep-alive voltage to memories when short circuit occurs in any of system loads. Converter powered by lowvoltage across two of three series diodes generated by short-circuit bus current. Relay switch is in open (short-circuit-detected) position. Protective circuit useful wherever necessary to improve reliability of volatile memories or other circuits that must not lose power.

Detwiler, R. C.↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
DOE OSTI2015

Characteristics and mechanism study of cerium oxide based random access memories

In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeO{sub x} is considered as a relatively new material to other dielectrics. Since research on CeO{sub x} based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeO{sub x} RRAMs and also compare electrical performance of Al/CeO{sub x}/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1987

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗
DOE OSTI2021

HAM: Hotspot-Aware Manager for Improving Communications with 3D-Stacked Memory

merging High-Performance Computing (HPC) workloads, such as graph analytics, machine learning, and big data science, are data-intensive. Data-intensive workloads usually present fine-grained memory accesses with limited or no data locality, and thus incur frequent cache misses and low utilization of memory bandwidth. 3D-stacked memory devices such as Hybrid Memory Cube (HMC) and High Bandwidth Memory (HBM) can provide significantly higher bandwidth than conventional memory modules. However, the traditional interfaces and optimization methods for JEDEC DDR devices do not allow to fully exploit the potential performance of 3D-stacked memory with the massive amount of irregular memory accesses of data-intensive applications. In this paper, we propose a novel Hotspot-Aware Manager (HAM) infrastructure for 3D-stacked memory devices capable of optimizing memory access streams via request aggregation, hotspot detection, and in-memory prefetching. %and an associated hotspot-aware page policy. We present the HAM design and implementation, and simulate it on a system using RISC-V embedded cores with attached HMC devices. We extensively evaluate HAM with over 12 benchmarks and applications representing diverse irregular memory access patterns. The results show that, on average, HAM reduces redundant requests by 37.51\% and increases the prefetch buffer hit rate by 4.2 times, compared to a baseline streaming prefetcher. On the selected benchmark set, HAM provides performance gains of 21.81\% in average (up to 34.28\%) and power savings of 35.07\% over a standard 3D-stacked memory.

Wang, Xi↗
NASA NTRS1991

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗
DOE OSTI2014

Metallic to hopping conduction transition in Ta{sub 2}O{sub 5−x}/TaO{sub y} resistive switching device

In this Letter, a comprehensive analysis of how the metallic behavior transition to hopping was presented by studying the transport mechanisms of low resistance states (LRS) in Ta{sub 2}O{sub 5−x}/TaO{sub y} resistive switching devices at very low temperatures. Three types of conduction behaviors were reported through temperature-dependent measurements ranging from 5 K to 250 K. Memory cells at low LRS show metallic behavior due to the formation of metallic filament. The temperature dependence of resistance at medium LRS exhibits an interesting phenomenon that a positive temperature coefficient transfers into a negative one at temperature of 20 K. Detailed analysis reveals that this phenomenon is caused by the coexistence of extended and localized states, with metallic conduction at higher temperatures and variable-range hopping at lower temperatures. Carrier transport at high LRS is dominated by electrons hopping conduction with nearest-neighboring hopping conduction changing into variable-range hopping as temperature decreases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2021

Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3D NAND Flash Memory

Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.

Direct ionization↗
DOE OSTI2025

Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches. Unlike conventional 1T-1C dynamic RAM (DRAM), which incurs refresh overhead, 2T-nC FeRAM offers a promising alternative as a non-volatile memory solution with low energy consumption. Our key findings include the potential of quasi-nondestructive readout (QNRO) sensing in 2T-nC FeRAM for logic-in-memory (LiM) applications, demonstrating its inherent capability to perform inverting logic without requiring external modifications, a feature absent in traditional 1T-1C DRAM. We successfully implement the MINORITY function within a single cell of 2T-nC FeRAM, enabling universal NAND and NOR logic, validated through SPICE simulations and experimental data. Additionally, the research investigates the feasibility of 3D integration with 2T-nC FeRAM, showing substantial improvements in storage and computational density, facilitating bulk-bitwise computation. Our evaluation of eight real-world, data-intensive applications reveals that 2T-nC FeRAM achieves 2× higher performance and 2.5× lower energy consumption compared to DRAM. Furthermore, the thermal stability of stacked 2T-nC FeRAM is validated, confirming its reliable operation when integrated on a compute die. These findings emphasize the advantages of 2T-nC FeRAM for LiM, offering superior performance and energy efficiency over conventional DRAM.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was to detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1997

Out-of-Core Streamline Visualization on Large Unstructured Meshes

It's advantageous for computational scientists to have the capability to perform interactive visualization on their desktop workstations. For data on large unstructured meshes, this capability is not generally available. In particular, particle tracing on unstructured grids can result in a high percentage of non-contiguous memory accesses and therefore may perform very poorly with virtual memory paging schemes. The alternative of visualizing a lower resolution of the data degrades the original high-resolution calculations. This paper presents an out-of-core approach for interactive streamline construction on large unstructured tetrahedral meshes containing millions of elements. The out-of-core algorithm uses an octree to partition and restructure the raw data into subsets stored into disk files for fast data retrieval. A memory management policy tailored to the streamline calculations is used such that during the streamline construction only a very small amount of data are brought into the main memory on demand. By carefully scheduling computation and data fetching, the overhead of reading data from the disk is significantly reduced and good memory performance results. This out-of-core algorithm makes possible interactive streamline visualization of large unstructured-grid data sets on a single mid-range workstation with relatively low main-memory capacity: 5-20 megabytes. Our test results also show that this approach is much more efficient than relying on virtual memory and operating system's paging algorithms.

Ueng, Shyh-Kuang↗
DOE OSTI2026

Carbon doping in GeTe drives differences in local structure and properties

Advances in low-power, energy-efficient information storage and computing require understanding and controlling the atomic and nanoscale structures of functional materials, such as phase-change materials. Phase-change memory technology enables nonvolatile, low-power memory in devices by storing information through reversible changes in a phase-change material's atomic structure (i.e., transformations between amorphous and crystalline phases) that have corresponding changes in properties, including electronic resistivity and optical reflectivity. Here, we apply complementary X-ray absorption spectroscopy and X-ray pair distribution function analyses to experimentally identify the local- and medium-range atomic structure differences of GeTe and C-doped GeTe thin films. Upon controlled heating, composition- and temperature-dependent atomic structure evolution in GeTe and C-doped GeTe films shows differences in bonding behavior and local structure that directly influence crystallization onset temperature. We find that the introduction of C interrupts Ge–Ge bonds in amorphous GeTe, altering the as-deposited structure to be more similar to the distorted rocksalt structure of crystalline α–GeTe. The change alters the response of the amorphous atomic structure to heating and also lowers the crystallization onset temperature, from 230 °C in GeTe to 220 °C in the C-doped film. The combined insights from both X-ray techniques provide understanding of structural transformations that enables the development and optimization of next-generation memory and computing materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thermal Radiation Transport with Tensor Trains

We present a novel tensor network algorithm to solve the time-dependent, gray thermal radiation transport equation. The method invokes a tensor train (TT) decomposition for the specific intensity. The efficiency of this approach is dictated by the rank of the decomposition. When the solution is “low rank,” the memory footprint of the specific intensity solution vector may be significantly compressed. The algorithm, following a step-then-truncate approach of a traditional discrete ordinates method, operates directly on the compressed state vector, thereby enabling large speedups for low-rank solutions. To achieve these speedups, we rely on a recently developed rounding approach based on the Gram-SVD. We detail how familiar S N algorithms for (gray) thermal transport can be mapped to this TT framework and present several numerical examples testing both the optically thick and thin regimes. The TT framework finds low-rank structure and supplies up to ≃60× speedups and ≃1000× compressions for problems demanding large angle counts, thereby enabling previously intractable SN calculations and supplying a promising avenue to mitigate ray effects.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1989

Merlin - Massively parallel heterogeneous computing

Hardware and software for Merlin, a new kind of massively parallel computing system, are described. Eight computers are linked as a 300-MIPS prototype to develop system software for a larger Merlin network with 16 to 64 nodes, totaling 600 to 3000 MIPS. These working prototypes help refine a mapped reflective memory technique that offers a new, very general way of linking many types of computer to form supercomputers. Processors share data selectively and rapidly on a word-by-word basis. Fast firmware virtual circuits are reconfigured to match topological needs of individual application programs. Merlin's low-latency memory-sharing interfaces solve many problems in the design of high-performance computing systems. The Merlin prototypes are intended to run parallel programs for scientific applications and to determine hardware and software needs for a future Teraflops Merlin network.

Wittie, Larry↗