The selection of transistors for use in ionizing radiation fields.
Transistor selection for use in ionizing radiation fields considering forward current gain degradation and collector-base leakage current increase
ELECTRIC CURRENT↗
SEARCH · Engineering Papers
Results for “leakage current”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
Toftul, Alexandra↗
Electrochemical reactivity and passivation of organic electrolytes at spinel MgCrMnO 4 cathode interfaces for rechargeable high voltage magnesium-ion batteries
Magnesium transition metal oxides such as MgCr 2−x Mn x O 4 are promising high-voltage and high-capacity cathode materials for rechargeable magnesium batteries (RMBs). Understanding and improving the chemical and electrochemical stability of the cathode–electrolyte interface (CEI) has been the primary technical emphasis to enable this category of cathode materials, which has been significantly underexplored. Herein, in this study, we focus on investigating the fundamental mechanism of parasitic reactions at the charged surface of the high-voltage MgCrMnO 4 model cathode with different organic electrolytes. The aim is to reveal the underlying effect of anions and solvents responsible for the passivation behavior of the cathode by using three exemplary anions: [(CF 3 SO 2 ) 2 N] − (TFSI − ), Al[OC(CF 3 ) 3 ] 4 − (TPFA − ), and [CB 11 H 12 ] − (MC) and three solvents: diglyme (G2), triglyme (G3), and 3-methoxypropylamine (MPA). High precision leakage current measurements during potentiostatic hold reveal that the electrolyte solvent chemistry has a more profound impact than anion's on the passivation of the MgCrMnO 4 cathode surface during deintercalation of Mg 2+ . X-ray photoelectron spectroscopy exhibits the differences in CEI composition. Amine solvents like MPA show poor passivation due to a higher degree of solvent decomposition, while the thin and anion-derived CEI in glyme-based electrolytes is directly linked with the better passivation behavior on the cathode. Furthermore, we leverage the knowledge from these findings to modify the electrolyte structure by adding a solvent additive, with the goal of reducing the parasitic reaction.
25 ENERGY STORAGE↗
Surface processing and discharge-conditioning of high voltage electrodes for the Ra EDM experiment
The Ra EDM experiment uses a pair of high voltage electrodes to search for the atomic electric dipole moment of 225 Ra. We use identical, plane–parallel electrodes with a primary high gradient surface of 200 mm 2 to generate reversible DC electric fields. Our statistical sensitivity is linearly proportional to the electric field strength in the electrode gap. We adapted surface decontamination and processing techniques from accelerator physics literature to chemical polish and clean a suite of newly fabricated large-grain niobium and grade-2 titanium electrodes. Three pairs of niobium electrodes and one pair of titanium electrodes were discharge-conditioned with a custom high voltage test station at electric field strengths as high as +52.5 kV/mm and –51.5 kV/mm over electrode gap sizes ranging from 0.4 mm to 2.5 mm. One pair of large-grain niobium electrodes was discharge-conditioned and validated to operate at ±20 kV/mm with steady-state leakage current ≤ 25 pA (1σ) and a polarity-averaged 98 ± 19 discharges per hour. These electrodes were installed in the Ra EDM experimental apparatus, replacing a copper electrode pair, and were revalidated to ±20 kV/mm. Here, the niobium electrodes perform at an electric field strength 3.1 times larger than the legacy copper electrodes and are ultimately limited by the maximum output of our 30 kV bipolar power supply.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.
42 ENGINEERING↗
Critical Contribution of Imbalanced Charge Loss to Performance Deterioration of Si-Based Lithium-Ion Cells during Calendar Aging
Increasing the energy density of lithium-ion batteries, and thereby reducing costs, is a major target for industry and academic research. One of the best opportunities is to replace the traditional graphite anode with a high-capacity anode material, such as silicon. However, Si-based lithium-ion batteries have been widely reported to suffer from a limited calendar life for automobile applications. Heretofore, there lacks a fundamental understanding of calendar aging for rationally developing mitigation strategies. Both open-circuit voltage and voltage-hold aging protocols were utilized to characterize the aging behavior of Si-based cells. Particularly, a high-precision leakage current measurement was applied to quantitatively measure the rate of parasitic reactions at the electrode/electrolyte interface. The rate of parasitic reactions at the Si anode was found 5 times and 15 times faster than those of LiNi 0.8 Mn 0.1 Co 0.1 O 2 and LiFePO 4 cathodes, respectively. Here, the imbalanced charge loss from parasitic reactions plays a critical role in exacerbating performance deterioration. In addition, a linear relationship between capacity loss and charge consumption from parasitic reactions provides fundamental support to assess calendar life through voltage-hold tests. These new findings imply that longer calendar life can be achieved by suppressing parasitic reactions at the Si anode to balance charge consumption during calendar aging.
25 ENERGY STORAGE↗
186 K Operation of Terahertz Quantum-Cascade Lasers Based on a Diagonal Design
Resonant-phonon terahertz quantum-cascade lasers operating up to a heat-sink temperature of 186 K are demonstrated. This record temperature performance is achieved based on a diagonal design, with the objective to increase the upper-state lifetime and therefore the gain at elevated temperatures. The increased diagonality also lowers the operating current densities by limiting the flow of parasitic leakage current. Quantitatively, the diagonality is characterized by a radiative oscillator strength that is smaller by a factor of two from the least of any previously published designs. At the lasing frequency of 3.9 THz, 63 mW of peak optical power was measured at 5 K, and approximately 5 mW could still be detected at 180 K.
Kumar, Sushil↗
A piezoelectrically actuated ball valve
Bimorph strip composed of two layers of poled piezoelectric ceramic material closes and opens valve. Strip performs like capacitator, allowing initial inrush of current when valve is energized and then only small leakage current flows as valve remains energized.
Erwin, L. R.↗
Circuit minimizes current drain caused by neon indicator lamps
Circuit lights neon lamp by back leakage current of the driving transistor, rather than by the transistors saturation or ''on-state'' current, thereby eliminating lowering of the voltage necessary for indication. Circuit has operating speed greater than indication circuit using a saturation principle and aids in power rationing.
Drylie, C. D.↗
Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs
Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler
THz frequencies↗
Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors
In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.
InAs/GaSb photodiodes↗
Electrical power loss from high-voltage power circuits through plasma leakage
Methods are proposed for constructing a solar power satellite system which would decrease electric current leakage through plasma.
Oman, H.↗
Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates
Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.
Neudeck, P. G.↗
Breakdown in Tantalum Capacitors
Failures in tantalum capacitors can be considered as a time-dependent-breakdown and reliability of all types of capacitors, including wet, MnO2 and polymer cathode parts, depends on the efficiency of self-healing that can mend parts after breakdown. A mechanism of self-healing in MnO2 capacitors is associated with oxygen reduction in the cathode layer and isolation of the breakdown site with high-resistive Mn2O3/Mn3O4 compositions. Although this mechanism is commonly accepted, details of self-healing have not been analyzed sufficiently yet, and the effects of scintillations on behavior of the parts has not been fully understood. There is a lack of data on the self-healing efficiency in different lots of capacitors. Even less is known about self-healing in polymer tantalum capacitors. In this work, different types of polymer and MnO2 capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of the amplitudes and durations of current spikes during breakdown. Characteristics of the parts and in particular leakage currents were measured to assess the efficiency of self-healing and improve screening processes for tantalum capacitors. Damaged sites were localized using infrared camera and their appearance analyzed after deprocessing and crosssectioning. Thermal effects during scintillations have been modeled, self-healing processes in polymer and MnO2 cathode capacitors discussed, and mechanisms of breakdown based on the growth of conductive filaments in the dielectric suggested.
tantalum polymer capacitors↗
2D Quantum Mechanical Study of Nanoscale MOSFETs
With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.
Svizhenko, Alexei↗
Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.
36 MATERIALS SCIENCE↗
Soft-Fault Detection Technologies Developed for Electrical Power Systems
The NASA Glenn Research Center, partner universities, and defense contractors are working to develop intelligent power management and distribution (PMAD) technologies for future spacecraft and launch vehicles. The goals are to provide higher performance (efficiency, transient response, and stability), higher fault tolerance, and higher reliability through the application of digital control and communication technologies. It is also expected that these technologies will eventually reduce the design, development, manufacturing, and integration costs for large, electrical power systems for space vehicles. The main focus of this research has been to incorporate digital control, communications, and intelligent algorithms into power electronic devices such as direct-current to direct-current (dc-dc) converters and protective switchgear. These technologies, in turn, will enable revolutionary changes in the way electrical power systems are designed, developed, configured, and integrated in aerospace vehicles and satellites. Initial successes in integrating modern, digital controllers have proven that transient response performance can be improved using advanced nonlinear control algorithms. One technology being developed includes the detection of "soft faults," those not typically covered by current systems in use today. Soft faults include arcing faults, corona discharge faults, and undetected leakage currents. Using digital control and advanced signal analysis algorithms, we have shown that it is possible to reliably detect arcing faults in high-voltage dc power distribution systems (see the preceding photograph). Another research effort has shown that low-level leakage faults and cable degradation can be detected by analyzing power system parameters over time. This additional fault detection capability will result in higher reliability for long-lived power systems such as reusable launch vehicles and space exploration missions.
Button, Robert M.↗
Field-dependent carrier transport in implanted isolation region of GaN lateral power devices
Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.
Sadek, Mansura (ORCID:0000000322588338)↗