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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Hierarchical nickel valence gradient stabilizes high-nickel content layered cathode materials

High-nickel content cathode materials offer high energy density. However, the structural and surface instability may cause poor capacity retention and thermal stability of them. To circumvent this problem, nickel concentration-gradient materials have been developed to enhance high-nickel content cathode materials’ thermal and cycling stability. Even though promising, the fundamental mechanism of the nickel concentration gradient’s stabilization effect remains elusive because it is inseparable from nickel’s valence gradient effect. To isolate nickel’s valence gradient effect and understand its fundamental stabilization mechanism, we design and synthesize a LiNi 0.8 Mn 0.1 Co 0.1 O 2 material that is compositionally uniform and has a hierarchical valence gradient. The nickel valence gradient material shows superior cycling and thermal stability than the conventional one. The result suggests creating an oxidation state gradient that hides the more capacitive but less stable Ni 3+ away from the secondary particle surfaces is a viable principle towards the optimization of high-nickel content cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2021

Methods of epsilon-near-zero optical modulation

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.

Wood, Michael↗
DOE OSTI2025

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗
DOE OSTI2022

Monolayer-like lattice dynamics in bulk WSe 2

Understanding the microscopic lattice dynamics is essential for regulating the thermal properties in two-dimensional layered materials. In transition metal dichalcogenides, the layered structures result in different but closely related phonon dispersions between monolayer and bulk. Here, by combining inelastic X-ray scattering and first-principles calculations, the lattice dynamics of tungsten diselenide (WSe 2 ) was investigated comprehensively, and a monolayer-like lattice dynamics in the bulk WSe 2 was revealed. We performed the first temperature-dependent phonon dispersions measurement and obtained the mode Grüneisen parameters of bulk WSe 2 , which are found to be in better agreement with the calculations on the monolayer system than those of the bulk. This observation indicates that lattice dynamics in bulk WSe 2 hold the characteristic of monolayers. The result provides valuable insights into the thermal properties of WSe 2 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Controlling N speciation in solution synthesis of N-doped carbon materials

Carbon-based materials, such as graphite and its functionalized/doped derivatives, are promising lightweight layered materials for hydrogen activation and storage. Their propensity to control the thermodynamics of hydrogen binding and the kinetics of hydrogen mobility strongly depends on the speciation and the arrangement of dopants. In this study, we demonstrate precise control over dopant speciation and clustering in nitrogen-containing layered carbon materials during hydrothermal synthesis. Through extensive spectroscopic characterization and first principles simulations, we demonstrate that the formation of N-motifs can be controlled by the choice of precursor and synthesis temperature. The distinct three-dimensional architecture and porosity in graphene oxide and carbon nitride-derived materials furnish a synthetic pathway for precise control over the local and global structure of nitrogen-doped carbon materials and their activity toward the activation of molecular hydrogen.

Byun, Mi Yeon [Pacific Northwest National Laborato↗
DOE OSTI2020

Photocarrier Dynamics in TlGaS 2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS 2 Nanoflakes: Implications for Optoelectronic Applications

We present an experimental investigation on photocarrier dynamics in a TlGaS 2 bulk crystal and its heterostructures with hexagonal BN and WS 2 . The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS 2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS 2 at room temperature. In the hexagonal-BN-TlGaS 2 heterostructure, the photocarrier dynamics was similar to that in TlGaS 2 , indicating the type-I band alignment of this structure with both band extremes located in TlGaS 2 . In the monolayer WS 2 -TlGaS 2 heterostructure, we observed charge transfer from TlGaS 2 to WS 2 and an extended lifetime of the transferred carriers in WS 2 . Here, these results introduce TlGaS 2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe 5

ZrTe 5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe 5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 160K with increasing thickness of the ZrTe 5 thin flakes from 42nm to 89nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Overall, our findings provide a multi-parameter indicator for the emergence of topological phase transition in ZrTe 5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also shed light on the role of anomalous Hall Effect in the transport properties of ZrTe 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2025

Single photon emitters in van der Waals solids for quantum photonics: materials, theory and molecular-scale characterization probes

Strong light–matter interactions in two-dimensional layered materials (2D materials) have attracted the interest of researchers from interdisciplinary fields for more than a decade now. A unique phenomenon in some 2D materials is their large exciton binding energies (BEs), increasing the likelihood of exciton survival at room temperature. It is this large BE that mediates the intense light–matter interactions of many of the 2D materials, particularly in their monolayer limit, where the interplay of excitonic phenomena poses a wealth of opportunities for high-performance optoelectronics and quantum photonics. Within quantum photonics, quantum information science (QIS) is growing rapidly, where photons are a promising platform for information processing due to their low-noise properties, excellent modal control, and long-distance propagation. A central element for QIS applications is a single photon emitter (SPE) source, where an ideal on-demand SPE emits exactly one photon at a time into a given spatiotemporal mode. Recently, 2D materials have shown practical appeal for QIS which is directly driven from their unique layered crystalline structure. This structural attribute of 2D materials facilitates their integration with optical elements more easily than the SPEs in conventional three-dimensional solid state materials, such as diamond and SiC. In this review article, we will discuss recent advances made with 2D materials towards their use as quantum emitters, where the SPE emission properties maybe modulated deterministically. Here, the use of unique scanning tunneling microscopy tools for the in-situ generation and characterization of defects is presented, along with theoretical first-principles frameworks and machine learning approaches to model the structure-property relationship of exciton–defect interactions within the lattice towards SPEs. Given the rapid progress made in this area, the SPEs in 2D materials are emerging as promising sources of nonclassical light emitters, well-poised to advance quantum photonics in the future.

2D layered materials↗
DOE OSTI2024

A chemical perspective on the chiral induced spin selectivity effect

ABSTRACT This review discusses opportunities in chemistry that are enabled by the chiral induced spin selectivity (CISS) effect. First, the review begins with a brief overview of the seminal studies on CISS. Next, we discuss different chiral material systems whose properties can be tailored through chemical means, with a special emphasis on hybrid organic-inorganic layered materials that exhibit some of the largest spin filtering properties to date. Then, we discuss the promise of CISS for chemical reactions and enantioseparation before concluding.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Doping strategy for layered oxide electrode materials used in lithium-ion batteries

The present invention features a new way of doping layered cathode materials in lithium ion batteries. Using a “high entropy” doping strategy, more than four impurity elements can be introduced to the host materials. The present invention applies this high entropy doping strategy to a high nickel content layered oxide material and a lithium-manganese rich material. This new high entropy doping strategy allows the layered oxide materials used in the positive electrode of lithium ion battery to achieve high energy density, long life cycle and reduced reliance on the expensive and toxic cobalt, all of which are desired attributes for improving the performance of lithium ion batteries and reducing their cost.

Xin, Huolin↗