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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Redox-enabled electronic interrogation and feedback control of hierarchical and networked biological systems

Abstract Microelectronic devices can directly communicate with biology, as electronic information can be transmitted via redox reactions within biological systems. By engineering biology’s native redox networks, we enable electronic interrogation and control of biological systems at several hierarchical levels: proteins, cells, and cell consortia. First, electro-biofabrication facilitates on-device biological component assembly. Then, electrode-actuated redox data transmission and redox-linked synthetic biology allows programming of enzyme activity and closed-loop electrogenetic control of cellular function. Specifically, horseradish peroxidase is assembled onto interdigitated electrodes where electrode-generated hydrogen peroxide controls its activity. E. coli ’s stress response regulon, oxyRS , is rewired to enable algorithm-based feedback control of gene expression, including an eCRISPR module that switches cell-cell quorum sensing communication from one autoinducer to another—creating an electronically controlled ‘bilingual’ cell. Then, these disparate redox-guided devices are wirelessly connected, enabling real-time communication and user-based control. We suggest these methodologies will help us to better understand and develop sophisticated control for biology.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Observation of interface piezoelectricity in superconducting devices on silicon

The development of superconducting quantum processors relies on understanding and mitigating decoherence in superconducting qubits. Piezoelectric coupling contributes to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Although bulk centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubit substrates, the lack of centrosymmetry at interfaces may induce piezoelectric losses. This effect was predicted decades ago but never experimentally observed in superconducting devices. Here, we report interface piezoelectricity at aluminum-silicon junctions and demonstrate it as a significant loss channel in superconducting devices. Using aluminum interdigital transducers on silicon, we observe piezoelectric transduction from room to millikelvin temperatures, with an effective electromechanical coupling factor K 2 ≈ (3 ± 0.4) × 10−5%, comparable to weakly piezoelectric substrates. Modeling shows this mechanism limits qubit quality factors to Q ~ 10 4 − 10 8 , depending on surface participation and mode matching. These findings reveal interface piezoelectricity as a major dissipation channel and highlight the need for heterostructure and phononic engineering in next-generation superconducting qubits.

Zhou, Haoxin [University of California, Berkeley, ↗
DOE OSTI2021

Solar cell contacts: quantifying the impact of interfacial layers on selectivity, recombination, charge transfer, and V oc

Interfacial layers (IFLs) are ubiquitous in solar cells, but their precise impact on carrier transfer rates and the relation of these rates to performance metrics and the concepts of selectivity and recombination is lacking. We report the use of a well-defined interdigitated back-contact (IBC) silicon solar cell to determine the precise role of such IFLs. We characterize the action of the common IFL spiro-OMeTAD by making it a third contact to the IBC cell. This architecture creates three solar cells within a single structure that, with numerical simulation, provide the exchange current densities (i.e., charge transfer rates) for electrons ( J 0n ) and holes ( J 0p ) and the quasi Fermi-level splitting in the absorber, which measures the balance of generation and recombination. Further, we describe the relation of V oc to contact recombination, the asymmetry in electron/hole collection rates at a single contact (contact selectivity), and the asymmetry in collection rates of the same carrier at separate contacts (carrier selectivity). Relative to bare gold, neat spiro-OMeTAD reduces J 0n and J 0p (their geometric mean ( J 0n J 0p ) 0.5 decreases by 10 4 ), decreasing contact recombination. Addition of the common dopant Li-TFSI and air increase J 0p / J 0n by 10 6 with little effect on ( J 0n J 0p ) 0.5 , increasing contact hole selectivity. The significant increase in V oc observed by introducing spiro-OMeTAD/Li-TFSI IFLs into the cells studied, however, is due to an increase in the carrier selectivity rather than the contact selectivity or recombination of the spiro-OMeTAD-modified contact. Operando measurements further show voltage-dependent changes in the J 0 s, demonstrating that spiro-OMeTAD contributes to hysteresis. Broader context : Solar cells operate by photogenerating excess charge carriers in an absorber material and, in competition with recombination, asymmetrically extracting them at so-called carrier-selective contacts, one that ideally collects only electrons and the other, only holes. Particularly in emerging photovoltaics such as perovskites, thin layers of organic semiconductors or related materials are introduced between the absorber and contact to improve power conversion efficiency. In terms of interfacial charge transfer, a prevailing view is that such interfacial layers improve performance by helping block the collection of the undesired carrier, considered a form of recombination. We use a novel platform to study the simultaneous impact of spiro-OMeTAD, a common interfacial layer, on the collection of electrons, the collection of holes, and on the recombination of electrons and holes. We quantitatively demonstrate that spiro-OMeTAD layers indeed passivate the contact toward recombination, but that larger improvements in the open-circuit voltage, a key cell metric, can come not only from this but also from increasing the asymmetry of the collection of electrons in the system. Further, operando measurements show transient changes in the properties of spiro-OMeTAD which suggest that it contributes to hysteresis phenomena commonly observed in perovskite and other solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A large field-of-view high-resolution hard x-ray microscope using polymer optics

Here, we present an effective approach using a matched pair of polymer-based condenser-objective lenses to build a compact full-field X-ray microscope with a high spatial resolution. A unique condenser comprising arrays of high-aspect-ratio prisms with equilateral cross-section is used for uniformly illuminating samples over a large field of view (FoV) from all angles, which match the acceptance of an objective made of interdigitated orthogonal rows of one-dimensional lenses. State-of-the-art Talbot grating interferometry used to characterize these lenses for the first time revealed excellent focusing properties and minimal wave-front distortions. Using a specific lens-pair designed for 20 keV X-rays, short-exposure times, and image registration with a cross-correlation technique, we circumvent vibrational instabilities to obtain distortion-free images with a uniform resolution of 240 nm (smallest resolvable line pair) over a large FoV, 80 × 80 µm 2 in extent. The results were contrasted with those collected under illumination using commercial two-dimensional parabolic lenses with a smaller FoV. This approach implemented on a diffractometer would enable diffraction-contrast or dark-field microscopy for fast observations of ‘mesoscopic’ phenomena in real space complementing reciprocal-space studies using diffraction on the same instrument.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Self Assembled Monolayers for Passivated Contacts

Passivated contacts mitigate defects typically encountered due metallization of solar cells. We deposit amorphous silicon (a-Si:H) on an oxidized silicon wafer via PECVD and anneal at high temperature to crystallize into polysilicon passivated contact. One drawback is the absorption of the polysilicon between grid fingers, so removal of this material is desirable to maximize Jsc. Alternatively, interdigitated back contact cells rely on a gap between n- and p- fingers, which is commonly etched to ensure electronic isolation. We utilize a self assembled monolayer (SAM) using hexamethyldisilazane (HMDS) as a precursor to pattern and etch amorphous silicon (a-Si:H) and polysilicon without the need for photoresist. Ultraviolet light exposure oxidizes the HMDS by photocleaving the organic groups [1] of the SAM leaving a patterned SiO2. Directly soaking this in TMAH will eventually etch the SAM and the silicon, where the SiO2 serves as an etch mask. Inversely, a dilute HF dip selectively etches this SiO2 and the SAM remains. A subsequent soak in TMAH selectively etches the underlying silicon, where the SAM serves as an etch mask. Importantly, we find that the SAM can remain intact for metallization, where we measure 10 mO-cm2 specific contact resistivity on n-type polysilicon.

passivation↗
DOE OSTI2022

Pre-production results from ATLAS ITk Strip Sensors Quality Assurance Testchip

The production of strip sensors within the framework of the ATLAS Inner Tracker (ITk) development is a process which requires continuous evaluation during the full production period (about 4 years). Such an evaluation is divided into two different parts: Quality Control (QC), which focuses on the final product (the actual sensors) and tries to identify possible defects once the fabrication is completed, and Quality Assurance (QA), which aims to prevent deviations in the manufacturing process and uses specifically-designed test structures. The initial sensor pre-production consists of 5% (1041 sensors) of the total number of sensors expected during production. As part of pre-production, the collaboration has measured key parameters from miniature strip sensors (minis), monitor diodes (MD8), and the ATLAS Testchip, before and after irradiation. In this contribution we focus on the analysis of the results of the MD8 and the Testchip. All parameters have been obtained from the test structures (MD8, bias resistors, interdigitated structures, field oxide capacitors, coupling capacitors, punch-through protection structures and cross-bridge resistors) measured at the different test sites (KEK/Tsukuba, Birmingham, Toronto, Ljubljana, Valencia, Carleton, Prague, CNM-Barcelona). The results are compared to predefined pre- and post-irradiation specifications for each tested parameter.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Surface acoustic wave generation and detection in the quantum paraelectric regime of SrTiO 3 -based heterostructures

Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact with STO-based electronic nanostructures, in particular LaAlO 3 /SrTiO 3 (LAO/STO). Here, we report the generation and detection of SAW within LAO/STO heterointerfaces at cryogenic temperatures ( T ≥ 2 K) using superconducting interdigitated transducers. Further, the temperature dependence shows an increase in the SAW quality factor that saturates at T ≈ 8 K. The effect of backgate tuning on the SAW resonance frequency shows the possible acoustic coupling with the ferroelastic domain wall evolution. This method of generating SAWs provides a pathway towards the dynamic tuning of ferroelastic domain structures, which are expected to influence the electronic properties of complex-oxide nanostructures. Devices that incorporate SAWs may in turn help to elucidate the role of ferroelastic domain structures in mediating electronic behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

42 ENGINEERING↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗
DOE OSTI2020

Three-Terminal Bipolar Junction Bottom Cell as Simple as PERC: Towards Lean Tandem Cell Processing

Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies

Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.

bifacial cells↗
DOE OSTI2021

UV-Induced Degradation of High-Efficiency Solar Cells with Different Architectures

The ultraviolet-induced degradation (UVID) of solar panels is associated with the deterioration of cell performance and reduced reliability of packaging materials. Here we examine the UV stability of different architectures of high-efficiency solar cells without any encapsulation. Identical UV exposure tests were performed at two different labs using UVA-340 fluorescent lamps under different electrical bias configurations (open- or short-circuit) and irradiated cell surfaces (for bifacial technologies). Cell technologies, including heterojunction (HJ), interdigitated back-contact cells (IBC), passivated emitter rear contact (PERC), passivated emitter rear totally-diffused (PERT), are found to be more susceptible to UVID, leading to significant Isc loss (up to 4%) and P max loss (up to 15%) as compared to the conventional back surface field (Al-BSF) cells after exposure to UV irradiation of 8.92 MJ-m -2 -nm -1 at 340 nm. Additionally, the bifacial cells when irradiated from the backside exhibited greater photocurrent loss compared to the front side exposure, indicating potential sensitivity of rear surface passivation to UV radiation.

crystalline silicon↗
DOE OSTI2023

Quasiparticle Generation-Recombination Noise in the Limit of Low Detector Volume

We have measured the quasiparticle generation-recombination (GR) noise in aluminium lumped element kinetic inductors with a wide range of detector volumes at various temperatures. The basic detector consists of meandering inductor and interdigitated capacitor fingers. The inductor volume is varied from 2 to 153 mu m(3) by changing the inductor width and length to maintain a constant inductance. We started with measuring the power spectrum density (PSD) of the detectors frequency noise which is a function of GR noise and we clearly observed the spectrum roll off at 10 kHz which corresponds to the quasiparticle lifetime. Using data from a temperature sweep of the resonator frequency we convert the frequency fluctuation to quasiparticle fluctuation and observe its strong dependence on detector volume: detectors with smaller volume display less quasiparticle noise amplitude. Meanwhile we observe a saturated quasiparticle density at low temperature from all detectors as the quasiparticle life time tqp approaches a constant value at low temperature.

Li, Juliang↗
DOE OSTI2024

Development of an MKID frequency-to-pixel LED mapper for SPT-3G+

SPT-3G+ is the next-generation camera for the South Pole Telescope (SPT). SPT is designed to measure the cosmic microwave background (CMB) and the mm/sub-mm sky. The planned focal plane consists of 34,000 microwave kinetic inductance detectors (MKIDs), divided among three observing bands centered at 220, 285, and 345 GHz. Each readout line is designed to measure 800 MKIDs over a 500 MHz bandwidth, which places stringent constraints on the accuracy of the frequency placement required to limit resonator collisions that reduce the overall detector yield. To meet this constraint, we are developing a two-step process that first optically maps the resonance to a physical pixel location, and then next trims the interdigitated capacitor (IDC) to adjust the resonator frequency. We present a cryogenic LED apparatus operable at 300 mK for the optical illumination of SPT-3G+ detector arrays. We demonstrate integration of the LED controls with the GHz readout electronics (RF-ICE) to take data on an array of prototype SPT-3G+ detectors. We show that this technique is useful for characterizing defects in the resonator frequency across the detector array and will allow for improvements in the detector yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Remote sensing of cytotype and its consequences for canopy damage in quaking aspen

Abstract Mapping geographic mosaics of genetic variation and their consequences via genotype x environment interactions at large extents and high resolution has been limited by the scalability of DNA sequencing. Here, we address this challenge for cytotype (chromosome copy number) variation in quaking aspen, a drought‐impacted foundation tree species. We integrate airborne imaging spectroscopy data with ground‐based DNA sequencing data and canopy damage data in 391 km 2 of southwestern Colorado. We show that (1) aspen cover and cytotype can be remotely sensed at 1 m spatial resolution, (2) the geographic mosaic of cytotypes is heterogeneous and interdigitated, (3) triploids have higher leaf nitrogen, canopy water content, and carbon isotope shifts (δ 13 C) than diploids, and (4) canopy damage varies among cytotypes and depends on interactions with topography, canopy height, and trait variables. Triploids are at higher risk in hotter and drier conditions.

Blonder, Benjamin↗
DOE OSTI2021

Transition to Online Cable Insulation Condition Monitoring

Nuclear power plant cables were originally qualified for 40 year life and generally have not required specific test verification to assure service availability through the initial plant qualification period. However, license renewals to 60 and 80 years of operation require a cable aging management program that depends on some form of test and verification to assure fitness for service. Environmental stress (temperature, radiation, chemicals, water, and mechanical) varies dramatically within a nuclear power plant and, in some cases, cables have degraded and required repair or replacement before their qualified end-of-life period. In other cases, cable conditions have been mild and dependable cable performance confirmed to extend well beyond the initial qualified life. Most offline performance-based testing requires cables to be de-coupled and de-energized for specially trained technicians to perform testing. These offline tests constitute an expensive operational burden that limits the economic viability of nuclear power plants. Although initial investment may be higher, new online test practices are emerging as options or complements to offline testing that avoid or minimize the regularly scheduled offline test burden. These online methods include electrical and fiber-optic partial discharge measurement, spread spectrum time or frequency domain reflectometry, distributed temperature profile measurements, and local interdigital capacitance measurement of insulation characteristics. Introduction of these methods must be supported by research to confirm efficacy plus either publicly financed or market driven investment to support the start-up expense of cost-effective instrumentation to monitor cable condition and assure reliable operation. This work summarizes various online cable assessment technologies plus introduces a new cable motor test bed to assess some of these technologies in a controlled test environment.

Glass, Samuel W.↗
DOE OSTI2020

Ultrahigh areal number density solid-state on-chip microsupercapacitors via electrohydrodynamic jet printing

Microsupercapacitors (MSCs) have garnered considerable attention as a promising power source for microelectronics and miniaturized portable/wearable devices. However, their practical application has been hindered by the manufacturing complexity and dimensional limits. Here, we develop a new class of ultrahigh areal number density solid-state MSCs (UHD SS–MSCs) on a chip via electrohydrodynamic (EHD) jet printing. This is, to the best of our knowledge, the first study to exploit EHD jet printing in the MSCs. The activated carbon-based electrode inks are EHD jet-printed, creating interdigitated electrodes with fine feature sizes. Subsequently, a drying-free, ultraviolet-cured solid-state gel electrolyte is introduced to ensure electrochemical isolation between the SS–MSCs, enabling dense SS–MSC integration with on-demand (in-series/in-parallel) cell connection on a chip. The resulting on-chip UHD SS–MSCs exhibit exceptional areal number density [36 unit cells integrated on a chip (area = 8.0 mm x 8.2 mm), 54.9 cells cm -2 ] and areal operating voltage (65.9 V cm -2 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Characterization of Electrochemical Behavior for Aqueous Organic Redox Flow Batteries

Use of aqueous redox flow batteries with organic redox-active materials holds great promise for large-scale and sustainable energy storage. The development of low-cost, highly efficient aqueous redox flow batteries lies in a comprehensive understanding of the electrochemical behaviors of redox-active compounds. In this work, an alkaline redox battery with organic dihydroxyphenazine sulfonate (DHPS) anolyte and ferro-/ferricyanide (Fe(CN) 6 ) catholyte is investigated as a typical example of aqueous redox flow batteries using organic redox-active materials. The electrochemical kinetics of DHPS and Fe(CN) 6 are separately characterized using the symmetrical cell design. The resistance components are calculated directly from the experimental measurement. The key kinetic parameters are extracted and compared for DHPS and Fe(CN) 6 electrolytes. The extracted parameters are validated with symmetrical and full flow cell simulations at different operating conditions. Key parameters and internal loss are also compared with all-vanadium redox flow batteries, representing current state of the art. In addition, our extracted key parameters from a symmetrical flow cell are compared with the measured key parameters by cyclic voltammetry, a widely deployed electroanalytical technique. The cell performance prediction of DHPS anolyte on a 780 cm 2 interdigitated cell is made and found the power density is peaked at 475 mW cm -2 at our measurement condition.

25 ENERGY STORAGE↗