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This help sheet provides information on how battery energy storage systems can support electric vehicle (EV) fast charging infrastructure. It is an informative resource that may help states, communities, and other stakeholders plan for EV infrastructure deployment, but it is not intended to be used as guidance, set policy, or establish or replace any standards under state or federal law.
Estimates of line-of-sight (LOS) displacements from Interferometric Synthetic Aperture Radar (InSAR) observations serve as the basis of the long-term monitoring of an operating natural gas storage site at Honor Rancho in California. Here, an inversion algorithm is used to estimate the portion of the signal that is attributable to deformation within the gas storage reservoir, located at a depth of around 3 km. Removing this contribution produces residuals that are used to characterize the background variation is surface deformation at the gas storage facility and to determine a threshold that can signify unusually large residuals. An application to almost 7 yr of InSAR data, from 2011 until 2018, indicates that there are intervals of heightened residuals as well as brief episodes of anomalously large misfits. An examination of the spatial distributions of the individual residual LOS displacements indicates larger displacements in an alluvial valley just south of the reservoir, with rapid spatial variations in sign, indicating a rather shallow origin. Furthermore, the two anomalous events also involve rapid spatial variations in the LOS displacement residuals directly above the storage facility. The results demonstrate that the technique of extracting residuals after removing the reservoir signal is a useful approach, even in the case of this deep reservoir, and is a promising method for long-term monitoring.
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Presented at the DOE-NETL 2020 Virtual Meeting - SMART Initiative Annual Review Meeting November 2-3, 2020, 11/2
In this paper, we have analyzed the input/output (I/O) activities of Cori, which is a high-performance computing system at the National Energy Research Scientific Computing Center at Lawrence Berkeley National Laboratory. Our analysis results indicate that most users do not adjust storage configurations but rather use the default settings. In addition, owing to the interference from many applications running simultaneously, the performance varies based on the system status. To configure file systems autonomously in complex environments, we developed DCA-IO, a dynamic distributed file system configuration adjustment algorithm that utilizes the system log information to adjust storage configurations automatically. Our scheme aims to improve the application performance and avoid interference from other applications without user intervention. Moreover, DCA-IO uses the existing system logs and does not require code modifications, an additional library, or user intervention. To demonstrate the effectiveness of DCA-IO, we performed experiments using I/O kernels of real applications in both an isolated small-sized Lustre environment and Cori. Our experimental results shows that our scheme can improve the performance of HPC applications by up to 263% with the default Lustre configuration.
Power systems, which range in size from small microgrids to island systems to large regional grids, are typically managed by a central controller that requires complex communication methods and can be unreliable and pose cyber security risks in certain applications, especially when controlling a larger number of nodes. We propose an inherently robust, scalable method of integration using multiple energy storage systems and distributed energy resources, which does not require any means of dedicated communication. This method moves beyond the paradigm of controlling grid frequency at a fixed value (e.g., 60 Hz), instead allowing the frequency to fluctuate within certain limits (e.g., 59.6-60.4 Hz). With a greater operating range, the frequency can carry necessary information from energy storage systems to highly variable distributed energy resources like photovoltaics, wind, hydro, etc.
This DOE-EPSCoR project aimed to predict, synthesize, and characterize novel layered two-dimensional (2D) high-entropy materials (HEMs). These 2D-HEMs, composed of multiple principal elements in nearly equal concentrations, are distinct from traditional 2D materials (typically containing two or three elements) and conventional alloys (dominated by a single primary element with minor secondary additions). Their unique structural and compositional features enable significant lattice strain accommodation, resulting in enhanced electrode performance and potential applications in catalysis, hydrogen storage, sensing, quantum information technologies, and flexible electronics. The research focused on addressing four fundamental questions: (i) What combinations of elements can form stable and synthesizable 2D-HEMs? (ii) What mechanisms drive the stability and synthesizability of crystalline single-phase 2D-HEMs? (iii) How do local chemical disorder and defects influence the macroscopic electronic and mechanical properties? and (iv) What charge storage mechanisms are active in selectively synthesized 2D-HEMs for battery and supercapacitor electrode applications? To achieve these goals, the project employed an integrated theory-experiment approach, incorporating high-throughput first-principles calculations, theoretical modeling, data mining, experimental synthesis, and advanced characterization techniques. The advanced computing resources and state-of-the-art experimental characterization facilities at Oak Ridge National Laboratory (ORNL) were leveraged through collaboration. Beyond scientific advancements, the project contributed to workforce development. Two postdoctoral researchers and three graduate students at the University of Maine were trained through co-advising by ORNL scientists and collaborative interactions, strengthening their expertise in cutting-edge materials science.
Curvature impacts physical properties across multiple length scales, ranging from the macroscopic scale, where the shape and size vary drastically with the curvature, to the nanoscale at interfaces and inhomogeneities in materials with structural, chemical, electronic, and magnetic short-range order. In quantum materials, where correlations, entanglement, and topology dominate, the curvature opens the path to novel characteristics and phenomena that have recently emerged and could have a dramatic impact on future fundamental and applied studies of materials. Particularly, magnetic systems hosting non-collinear and topological states and 3D magnetic nanostructures strongly benefit from treating curvature as a new design parameter to explore prospective applications in the magnetic field and stress sensing, microrobotics, and information processing and storage. This Perspective gives an overview of recent progress in synthesis, theory, and characterization studies and discusses future directions, challenges, and application potential of the harnessing curvature for 3D nanomagnetism.
Information processing and storage by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units the memory content of which can be easily tuned and controlled. In this work, we introduce a polariton-based quantum memristor where the memristive nature arises from the intercavity polariton exchange and is controlled by a time-varying atom-cavity detuning. A dynamical hysteresis is characterized by the fluctuations in the instantaneous polariton number, where the history information is encoded into a dynamical phase. Using a Lindblad master-equation approach, we find that features of the quantum memristor dynamics, such as the area and circulation of the hysteresis loop, showcase a kind of “plasticity” controlled by quantum state initialization. This makes this quantum memristor very versatile for a wide range of applications.
Nanomagnets with giant magnetic anisotropy energy and long coherence time are desired for various technological innovations such as quantum information procession and storage. Based on the first-principles calculations and model analyses, we demonstrate that a single uranium atom substituting Al on the Al 2 O 3 (0001) surface may have high structural stability and large magnetic anisotropy energy up to 48 meV per uranium atom. As the magnetization resides in the localized $\textit{f}$ shell and is not much involved in chemical bonding with neighbors, long coherence time up to ~1.6mS can be achieved for the quantum spin states. These results in this work suggest a different strategy for the search of ultrasmall magnetic units for diverse applications in the quantum information era.
Technological change and policy support have heightened expectations for the role of energy storage in power systems, creating a need to enhance representations of energy storage in long-term models to inform decision-making. Energy storage technologies have complex and diverse cost, value, and performance characteristics that make them challenging to model, but there is limited guidance about best practices and research gaps for energy storage analysis. This paper reviews the literature and draws upon our collective experience to provide recommendations to analysts on approaches for representing energy storage in long-term electric sector models, navigating tradeoffs in model development, and identifying research gaps for existing tools and data. The review focuses on national-scale models with technological, temporal, and regional detail given their prevalence in planning and policy, though many insights are transferable to other modeling contexts. It also offers guidance to consumers of model outputs on proper use and interpretation based on model strengths and limitations. In particular, this review demonstrates the importance of capturing how the values of energy storage and other resources change as the system composition changes (e.g. with different levels of storage, renewables deployment, and emissions outcomes). These considerations require model detail like high spatiotemporal resolutions and endogenous investments that global integrated assessment models and price-taker frameworks do not typically resolve. Research gaps include linking tools of different resolutions, developing reduced-form representations of value streams, incorporating hybrid energy storage and renewable systems, and representing longer-duration energy storage technologies.
As larger, higher-quality quantum devices are built and demonstrated in quantum information applications, such as quantum computation and quantum communication, the need for high-quality quantum memories to store quantum states becomes ever more pressing. Future quantum devices likely will use a variety of physical hardware, some being used primarily for processing of quantum information and others for storage. Here we study the correlation of the structure of quantum information with physical noise models of various possible quantum memory implementations. Through numerical simulation of different noise models and approximate analytical formulas applied to a variety of interesting quantum states, we provide comparisons between quantum hardware with different structure, including both qubit- and qudit-based quantum memories. Our findings point to simple, experimentally relevant formulas for the relative lifetimes of quantum information in different quantum memories and have relevance to the design of hybrid quantum devices.
We report that with flexibility in tuning their electric and magnetic properties, multiferroics can be used in information exchange and storage in ways that are very different from the present electronic materials. Here we use resonant soft X-ray scattering spectroscopy to study the F-type (0,τ,0) and C-type (0, 1–2τ, 0) diffraction peaks from sinusoidal antiferromagnetic spin order in multiferroic DyMnO 3 . By comparing the temperature dependence of ordering wave vectors τ, peak intensities I, and correlation lengths λ measured at Mn L 2 - , O K-, and Dy M 5 -edges, we show that the nearly perfect locking between the ordering wave vectors from Dy 4f states and Mn 3d orbitals manifesting the second harmonic diffraction peak implies the notable orbital involvement in the coupling between Mn and Dy spins. Our DFT calculations further suggest that the lattice response to different antiferromagnetic ground states (A-type versus E-type) is much weaker in TbMnO 3 , in agreement with previous claim that the symmetric exchange interaction can be an important factor for understanding the ferroelectricity in DyMnO 3 than in TbMnO 3 .
Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.
Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.
The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.
The discovery of lead-free piezoelectric materials is crucial for future information and energy storage applications. Enhanced piezoelectric and other physical properties are commonly observed near the morphotropic phase boundary (MPB) composition of ferroelectric solid solutions. The (1 – x)Ba(Zr 0.2 Ti 0.8 )O 3 -x(Ba0.7Ca0.3)TiO 3 (BZT-xBCT) system exhibits a large electromechanical response around its MPB region at x = 0.5. Here, we report experimental and theoretical results of BZT-xBCT over a wide composition range (0.3 ≤ x ≤ 1.0). X-ray diffraction and Raman spectroscopy studies indicate a composition-induced structural phase transition from a rhombohedral (R3m) phase at x ≤ 0.4 to a tetragonal (P4mm) phase at x ≥ 0.6 through a multiphase coexistence region at 0.45 ≤ x ≤ 0.55 involving orthorhombic + tetragonal (Amm2 + P4mm) phases. First-principles calculations elucidate the phase competition in the coexistence region. The critical composition (x = 0.5) displays enhanced dielectric, ferroelectric, and piezoelectric properties, where notably d 33 ~ 320 pC/N. This paper provides clear evidence of Amm2+P4mm crystallographic phases in the MPB region, which is responsible for the improved functional properties.