SEARCH · Engineering Papers

Results for “high-field”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8

All sources NASA NTRS DOE OSTI

NASA NTRS1980

The magnetic field of Saturn - Further studies of the Pioneer 11 observations

Analysis of magnetic field observations by the Goddard Space Flight Center high-field flux gate magnetometer on the Pioneer 11 spacecraft during Saturn encounter yields estimates of the planetary field. The field is mainly dipolar but rather weaker than expected, with a moment equal to 0.20 G cubic Saturn radii or 4.3 x 10 to the 28th G cu cm, opposite in polarity to earth's. Surprisingly, the field appears to be axially symmetric but with a small (0.04 Saturn radii) offset to the north so that N (S) polar field intensities are 0.6 (0.4) G, respectively. The deduced polar offset appears not to be an artifact of the limited spatial extent of the observations or the presence of fields of external origin. The average stand-off distance of the magnetopause is expected to be 20 Saturn radii, i.e., at the orbit of Titan, so that this largest of solar system satellites is immersed not only in the Saturnian magnetosphere but also at times in its magnetosheath and sometimes even in the interplanetary medium.

Acuna, M. H.↗

NASA NTRS1981

Effect of zinc impurity on silicon solar-cell efficiency

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Sah, C.-T.↗

NASA NTRS1984

A flying superconducting magnet and cryostat for magnetic suspension of wind-tunnel models

The engineering practicality of a persistent high-field superconducting solenoid cryostat as a magnetic suspension and balance system (MSBS) for wind-tunnel testing of aircraft and missile models is examined. The test apparatus is a simple solenoid of filamentary NbTi superconductor with a cupronickel matrix. The apparatus, with a length-to-diameter ratio of 6 to 1 and a radius of 32 mm, used a 0.25 mm wire with a critical current of 27 A in an external field of 6 T. The total heat inleak of 150 mW was achieved. Helium boiloff rates were tested over a range of operating conditions, including pitch attitudes from 10 deg nose down to 90 deg nose up; the rate was estimated as low, but the aerodynamic acceptability of venting gaseous helium has not been determined. It is shown that the effectiveness of the concept increases with increasing scale, and performance in excess of that of conventional ferromagnets is achievable with reduction in size and costs, and with aptness to transonic wind-tunnel testing. Detailed specifications and schematics are included.

Britcher, C.↗

NASA NTRS1986

Optical and electrical characterizations of laser-chemical-vapor-deposited aluminum oxynitride films

Composition-dependent optical and electrical properties of L-CVD (Al2O3)1-c-(AlN)c composite films are examined. The optical properties exhibit a continuous change from Al2O3 to AlN with increasing value of the composition parameter c from zero to one. There is a critical concentration value of about 0.3 below and above which Al2O3- and AlN-like optical properties are observed. The impurity absorption regions are 5.1-6.7 eV for Al2O32 and 4.6-6.0 for AlN, while the energy gap is about 6.7 eV for Al2O3 and 6.0 eV for AlN. The electrical properties of Al-insulator n-Si MIS structures display externally programmable states when bulk-controlled electron emission occurs from the traps. In the high-field region a persistent polarization field is established within the insulator. C-V characteristics of the samples are more sensitive to the concentration factor c than the I-V characteristics. A large clockwise hysteresis is observed for AlN, but a smaller counterclockwise one is observed for Al2O3.

Demiryont, H.↗

NASA NTRS1986

The new magnetic white dwarf PG 1031 + 234 - Polarization and field structure at more than 500 milion Gauss

The discovery and study of a PG white dwarf which shows strong linear and circular polarization modulated with a rotation period of 3 hr 24 min is reported. The new star, PG 1031 + 234, is more highly magnetic than even Grw +70 deg 8247, with absorption components of hydrogen in its optical and UV spectra corresponding to fields from 200 to more than 500 MG. An asymmetric dependence of polarization on rotational phase shows that the surface field structure on the star is more complex than a simple centered dipole. The basic observational features can be well reproduced by a rotating star containing an oblique centered dipole punctuated near its magnetic equator by a high-field spot containing primarily radial field lines.

Schmidt, Gary D.↗

NASA NTRS1988

Atmospheric Electrical Modeling in Support of the NASA F-106 Storm Hazards Project

A recently developed storm electrification model (SEM) is used to investigate the operating environment of the F-106 airplane during the NASA Storm Hazards Project. The model is 2-D, time dependent and uses a bulkwater microphysical parameterization scheme. Electric charges and fields are included, and the model is fully coupled dynamically, microphysically and electrically. One flight showed that a high electric field was developed at the aircraft's operating altitude (28 kft) and that a strong electric field would also be found below 20 kft; however, this low-altitude, high-field region was associated with the presence of small hail, posing a hazard to the aircraft. An operational procedure to increase the frequency of low-altitude lightning strikes was suggested. To further the understanding of lightning within the cloud environment, a parameterization of the lightning process was included in the SEM. It accounted for the initiation, propagation, termination, and charge redistribution associated with an intracloud discharge. Finally, a randomized lightning propagation scheme was developed, and the effects of cloud particles on the initiation of lightning investigated.

Helsdon, John H., Jr.↗

NASA NTRS1987

Upper critical field of high temperature Y(1.2)Ba(0.8)CuO(4-delta) superconductor

A 20-T high-field magnet is used to measure electrical resistance as a function of temperature in the Y(1.2)Ba(0.8)CuO(4-delta) superconductor. The temperature dependence of the critical field, Hc2(T), is obtained from the superconduction transition. A Hc2(O) value of 166T is determined which is the highest critical field yet reported. Results show Y(1.2)Ba(0.8)CuO(4-delta) to be a 90K Type-II superconductor, with a lower critical field Hc1(O) of about 0.2T and a penetration depth of about 290 A.

Hor, P. H.↗

NASA NTRS1991

Melt-processed bulk superconductors: Fabrication and characterization for power and space applications

Melt-process bulk superconducting materials based on variations on the base YBa2Cu3O(x) were produced in a variety of shapes and forms. Very high values of both zero-field and high-field magnetization were observed. These are useful for levitation and power applications. Magnetic measurements show that the effects of field direction and intensity, temperature and time are consistent with an aligned grain structure with multiple pinning sites and with models of thermally activated flux motion.

Hojaji, Hamid↗

NASA NTRS1990

Strong Langmuir turbulence generated by electron beams - Electric-field distributions and electron scattering

Strong turbulence and transit-time scattering theory are applied here to calculate the statistical distribution of intense Langmuir fields and the consequent beam scattering in plasma turbulence driven by an electron beam. The experimentally observed electric-field distributions are compared with predictions of strong-turbulence theory, concentrating on the wave levels, the Gaussian tail of the high-field distribution observed in one experiment, the arrest scale of collapse, and the fractional volume occupied by the highest fields. The Guassian form of the tail is confirmed, and the results imply that the collapse is arrested at a scale where the peak electrostatic energy density is of the same order as the thermal energy density. The theory of transit-time interactions is generalized to include relativistic particle dynamics and is applied to predict the scattering of the beam electrons in energy and angle as they pass through strong Langmuir turbulence. The results support the validity of the recently developed scaling theory of strong turbulence.

Robinson, P. A.↗

NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

The oscillatory magnetoresistance wave form of a 2-D electron gas shows multiple structures when two subbands are populated. In addition to high-field oscillations at a frequency equal to the sum of the two frequencies corresponding to the concentrations of the subbands, and to a superposition at intermediate fields, we observed oscillations at the difference frequency at low fields and higher temperatures. The field range at which the frequency difference is observed increases with increasing temperature. The crossover from superposition to frequency difference is accompanied by a beat. Similar beats, whose field location shows identical temperature dependence, can be observed in data obtained by other groups on different structures. The various components of the wave form can be attributed to different phase relations between the diagonal and off-diagonal elements of the conductivity tensor. It is shown how the intermodulation term, when inserted into the extended oscillatory equation, can give rise to all three structures.

Schacham, S. E.↗

NASA NTRS1992

Formation of very strongly magnetized neutron stars - Implications for gamma-ray bursts

It is proposed that the main observational signature of magnetars, high-field neutron stars, is gamma-ray bursts powered by their vast reservoirs of magnetic energy. If they acquire large recoils, most magnetars are unbound from the Galaxy or reside in an extended, weakly bound Galactic corona. There is evidence that the soft gamma repeaters are young magnetars. It is argued that a convective dynamo can also generate a very strong dipole field after the merger of a neutron star binary, but only if the merged star survives for as long as about 10-100 ms. Several mechanisms which could impart a large recoil to these stars at birth, sufficient to escape from the Galactic disk, are discussed.

Duncan, Robert C.↗

NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

Schacham, S. E.↗

NASA NTRS1993

Solar cycle 21 effects on the Interplanetary Magnetic Field and related parameters at 0.7 and 1.0 AU

Magnetometer data obtained over the course of the previous solar cycle by the Pioneer Venus orbiter at about 0.7 AU and IMP 8 at 1.0 AU are used to compare the long-term behavior of the IMF at these two heliocentric distances. Similarities include an enhancement in the typical or median field magnitude during the declining phase of the solar cycle (as compared to solar maximum or minimum), slight decreases in the Parker spiral angle from the declining phase through solar minimum, similar trends in the Alfvenic and magnetosonic Mach numbers, and a remarkably consistent sector structure. Differences include the temporal behavior of the high-field tail of the field distribution, showing that high fields are most frequently observed during solar maximum at the Earth but during the declining phase of activity at Venus. This feature suggests that the perceived occurrence history of large fields from transient disturbances such as coronal mass ejections is a sensitive function of position within the heliosphere.

Luhmann, J. G.↗

NASA NTRS1993

Improvement of persistent magnetic field trapping in bulk Y-Ba-Cu-O superconductors

For type-II superconductors, magnetic field can be trapped due to persistent internal supercurrent. Quasi-persistent magnetic fields near 2 T at 60 K (and 1.4 T at 77 K) have been measured in minimagnets made of proton-irradiated melt-textured Y-Ba-Cu-O (MT-Y123) samples. Using the trapping effect, high-field permanent magnets with dipole, quadrupole, or more complicated configurations can be made of existing MT-Y123 material, thus bypassing the need for high-temperature superconductor (HTS) wires. A phenomenological current model has been developed to account for the trapped field intensity and profile in HTS samples. This model is also a guide to select directions of materials development to further improve field trapping properties. General properties such as magnetic field intensities, spatial distributions, stabilities, and temperature dependence of trapped field are discussed.

Chen, In-Gann↗

NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

Neudeck, Philip G.↗

NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗