Low Temperature Electron Microscopy with High Field Superconducting Lenses
Cryo-electron microscope with high field superconducting lenses
Fernandez-Moran, H.↗
SEARCH · Engineering Papers
Results for “high temperature electronics”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Silicon in carbonaceous chondrite metal - Relic of high-temperature condensation
Electron microprobe analyses of an extraordinarily large metal grain from the Murchison type 2 carbonaceous chondrite gave 0.24 mole % silicon. Thermodynamic calculations show that this is a natural consequence of condensation of alloys from the solar nebular gas at a total pressure between 10 to the -5th and 10 to the -3rd atm, provided they failed to equilibrate with it after cooling to less than 1200 K
Grossman, L.↗
Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications
A prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.
High temperature↗
Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications
A prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.
High temperature↗
Emerging High Temperature Sensors and Electronics for Future Lunar-Martian Reactors
Explore the source record for details and available documents.
integrated↗
GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments
We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....
AlGaN/GaN↗
RePED 250: A Revolutionary, High Drilling Rate, High-T Geothermal Drilling System and Companion Power Electronics (Final Report)
Geothermal drilling in the United States is drastically slower and more costly than Oil and Gas drilling, primarily due to the additional challenges in geothermal wells: hard rock types and high temperatures. The Repetitive Pulsed Electric Drill (250 degrees C) (RePED-250), developed by Tetra Corporation has the potential to change this with a novel electro-crushing technology. RePED-250 releases pulses of electricity through the rock, which causes it to break in tension, instead of compression like conventional rotary drilling. The tensile strength of hard rocks like granite is only ~5% of their compressive strength, requiring less energy, time, and wear on the bit than conventional drilling. The RePED drill bit has no moving parts, uses drilling mud to remove rock fragments, and standard drill pipe, enabling a direct transition from conventional drilling systems. The objective of this project is to move RePED technology towards commercial readiness for high-temperature geothermal applications. This involves: 1) Creating high-temperature, high power electronic components for the RePED drill capable of operating at the high temperatures of a geothermal well. The target is a 250 degrees C ambient environment. Specifically, capacitors, high voltage switches, and a downhole generator capable of generating the necessary power. 2) Demonstrating RePED's effectiveness drilling through hard rock (granite) and examining its pathway to commercialization and effect on the US geothermal market. Work on this project has led to significant improvement over the state-of-the-art for all the examined electronics, through design, modeling, and testing of these novel components, though some additional development is still needed to deploy these high-temperature parts in a geothermal well. Besides their use in RePED-250, each component has applications in other industries where the stability of electronics at high-temperature is needed. To address the second barrier to commercialization, a 9" hole was drilled through a sample block of granite, demonstrating the tool's effectiveness in hard rock. The team investigated RePED-250's effect on well cost, and the geothermal industry, through various models described in the report.
15 GEOTHERMAL ENERGY↗
Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors
Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.
Vasquez, Richard P.↗
Making Cubic Silicon Carbide Semiconductors
Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.
Powell, J.↗
Development of silicon carbide semiconductor devices for high temperature applications
The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.
Matus, Lawrence G.↗
Nonvolatile electrochemical memory at 600°C enabled by composition phase separation
Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.
42 ENGINEERING↗
Inverted grounding technique for electron beam heating
In the production of high temperature by electron bombardment the cathode is held at ground potential while the hot anode is raised to a high negative potential. An annealing chamber using the inverted grounding is constructed around a commerically available stainless steel cross.
Jirberg, R. J.↗
Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized
The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.
Source record↗
Silicon Carbide Sensors and Electronics for Harsh Environment Applications
Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.
Evans, Laura J.↗
Silicon carbide, an emerging high temperature semiconductor
In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
Matus, Lawrence G.↗
RePED 250: A Revolutionary, High Drilling Rate, High-T Geothermal Drilling System and Companion Power Electronics
Geothermal drilling in the United States is drastically slower and more costly than Oil and Gas (O&G) drilling, primarily due to the additional challenges in geothermal wells: hard rock types and high temperatures. The Repetitive Pulsed Electric Drill (250°C) (RePED-250), developed by Tetra Corporation has the potential to change this with a novel electro-crushing technology. RePED-250 releases pulses of electricity through the rock, which causes it to break in tension, instead of compression like conventional rotary drilling. The tensile strength of hard rocks like granite is only ~5% of their compressive strength, requiring less energy, time, and wear on the bit compared to conventional drilling. The RePED drill bit has no moving parts, uses drilling mud to remove rock fragments, and uses standard drill pipe, enabling a direct transition from conventional drilling systems. The objective of this project is to move RePED technology towards commercial readiness for high-temperature geothermal applications. This involves: 1) Creating high-temperature, high power electronic components for the RePED drill capable of operating at the high temperatures of a geothermal well. The target is a 250°C ambient environment. Specifically, capacitors, high voltage switches, and a downhole generator capable of generating the necessary power. 2) Demonstrating RePED’s effectiveness drilling through hard rock (granite) and examining its pathway to commercialization and effect on the US geothermal market. Work on this project has led to significant improvement over the state-of-the-art for all the examined electronics, through design, modeling, and testing of these novel components, though some additional development is still needed to deploy these high-temperature parts in a geothermal well. Besides their use in RePED-250, each component has applications in other industries where the stability of electronics at high-temperature is needed. To address the second barrier to commercialization, a 9” hole was drilled through a sample block of granite, demonstrating the tool’s effectiveness in hard rock. The team investigated RePED-250’s effect on well cost and the geothermal industry, through various techno-economic models described in the report.
15 GEOTHERMAL ENERGY↗
The influence of autoionization accompanied by excitation on dielectronic recombination and ionization equilibrium
In the process of dielectronic recombination, the doubly excited state formed by radiationless capture may autoionize preferentially into an excited state of the recombining ion. This additional autoionization process has not been discussed in previous treatments of dielectronic recombination. The dielectronic recombination rates for certain nonhydrogenic Fe ions, although still larger than the direct radiative recombination rates, are found to be substantially reduced by the inclusion of the additional autoionization rate in the branching ratio for the stabilizing radiative transition. Consequently, the temperatures of maximum equilibrium abundance are significantly lower than those predicted by recent calculations. Finally, the radiative energy loss rate coefficients are calculated for radiation processes involving electron Fe-ion collisions in high-temperature plasmas. Electron impact excitation of resonance line radiation is the dominant radiative cooling mechanism in steady-state plasmas at temperatures where ions with bound electrons are abundant. However, it is found that the radiation emitted during dielectronic recombination can be more important than direct recombination radiation and bremsstrahlung.
Jacobs, V. L.↗
Containerless high-temperature calorimeter
Samples are heated by electron bombardment in high-temperature calorimeter that operates from 1,000 to 3,600 C yet consumes less that 100 watts at temperatures less than 2,500 C. Contamination of samples is kept to minimum by suspending them from wire in vacuum chamber. Various sample slopes such as wires, dishs, spheres, rods, or irregular bodies can be accommodated and only about 100 nq of samples are needed for accurate measurements.
Lacy, L. L.↗