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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

GaAs Schottky barrier photo-responsive device and method of fabrication

A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.

Alcorn, G. E.↗
NASA NTRS1979

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kuhlman, G. J.↗
DOE OSTI2024

Production of Germanium and Gallium Concentrates for Industrial Processes

A conceptual design of a process to produce germanium and gallium metal from mixed rare earth concentrates (consisting of oxides or carbonates) (MREC) produced from lignite carbon-ore was developed. The design was based on past work associated with the recovery of Ge from carbon-ore ash, modeling of the behavior of Ge and Ga in pyrometallurgical processes, and laboratory testing of the potential recovery of Ge and Ga from MREC. A teaming plan was developed that encompasses the entire supply chain that consisted of the Ge and Ga-rich carbon-ore resource, MREC pilot scale concentrate producer, MREC processing facility to produce Ge/Ga concentrates, refining of Ge and Ga concentrates to produce high purity metals (99.999+ purity), and Ge/Ga end users. A research plan was developed to transition the Ge and Ga separation from MREC, concentrating, and refining technology from a conceptual design to commercial scale. A technical and economic assessment of the conceptual design indicated that MREC derived from the UND process can produce 90 to 99% pure Ge and Ga concentrates at >20% lower costs.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2019

Dramatic effect of oxide on measured liquid metal rheology

Liquid metals have traditionally been treated as Newtonian liquids, but several researchers have recently suggested that some metals may shear thin. While apparent shear thinning can be caused by surface oxidation, the reports of shear-thinning metals were investigated using cup and bob type rheometers, which are expected to only be weakly impacted by the surface contamination effects. We show here that even small amounts of oxide on the surface of liquid metals can cause dramatic changes to the measured viscosity of the sample. Using a Searle-type rotational rheometer, we measured the viscosity of eutectic gallium indium and tin in a low-oxygen environment. When either metal is slightly oxidized, the measured viscosity increases by orders of magnitude and the liquid displays erroneous shear-thinning behavior. When the oxide is removed via an active flux, the measured viscosity is Newtonian. The findings outlined here provide insight into the difficulties of measuring the viscosity of easily oxidized liquids and confirm that liquid metals are likely best described as Newtonian liquids at all measured shear rates.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Purcell enhancement↗
NASA NTRS1975

The AMOS cell - An improved metal-semiconductor solar cell

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Stirn, R. J.↗
DOE OSTI2020

CO 2 -Assisted propane aromatization over phosphorus-modified Ga/ZSM-5 catalysts

Modification of HZSM-5 with phosphorus (P) and gallium (Ga) was found to enhance the activity of CO 2 -assisted oxidative dehydrogenation and aromatization (CO 2 -ODA) of propane to liquid aromatics. Flow reactor studies measuring the simultaneous CO 2 reduction and the CO 2 -ODA of propane were performed at 873 K at atmospheric pressure over unmodified HZSM-5 and P/Ga/ZSM-5 catalysts. At comparable propane conversion, HZSM-5 showed a high selectivity toward the undesired methane product (41.4%) with a relatively low selectivity toward aromatics (16.5%). In comparison, P/Ga/ZSM-5 demonstrated a significantly higher aromatics selectivity (42.3%) with a simultaneous reduction in methane selectivity (13.5%). Density functional theory (DFT) calculations identified the mechanisms for propane dehydrogenation and aromatization over P/Ga/ZSM-5 and the role of CO 2 . Finally cooperative with P, CO 2 addition avoided the formation of molecular H 2 and reduced the barriers for benzene formation, leading to an enhanced activity and selectivity to aromatics from CO 2 -ODA of propane over P/Ga/ZSM-5.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1975

A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell

A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.

Stirn, R. J.↗
NASA NTRS2003

Experimental Study of the Angle of Repose of Surrogate Martian Dust

Accumulation of wind-blown dust particles on solar cells and instruments will be a great challenge in the exploration of Mars, significantly reducing their lifetime, durability, and power output. For future Mars Lander missions it is crucial to gain information about the ideal angle at which solar panels can be positioned to minimize dust deposition and thus, maximize the power output and lifetime of the solar cells. The major determinant for the optimal panel angle is the angle of repose of the dust particles that is dependent on a variety of physical and chemical properties of the particles, the panel surface, and the environmental conditions on the Mars surface. To gain a basic understanding of the physical and chemical processes that govern dust deposition and to get feedback for the design of an experiment suitable for one of the future Mars Lander missions we simulate atmospheric conditions expected on the Mars surface in a controlled chamber, and observe the angle of repose of Mars dust surrogates. Dust deposition and angle of repose were observed on different sized spheres. To cover a range of potential materials we will use spheres made of 7075 aluminum (10 mm, and 15 mm), alumina oxide ceramic (10 mm), and Teflon(trademark) (10 mm) and wafers of gallium arsenide, silicon.

Moeller, L. E.↗
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS1981

Schottky barrier solar cell

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Stirn, R. J.↗
NASA NTRS1993

CGF cartridge development, volume 1

This report is a summary of SRI's efforts in Crystal Growth Furnace cartridge developments. It includes: evaluation of molybdenum, TZM, and WC-103 as cartridge materials; a survey of oxidation resistant coatings; chemical compatibility studies of cadmium-zinc-telluride and gallium-arsenide with TZM and WC-103; a survey of future cartridge materials; and suggested improvements in ampoule design.

Dixon, Carl A.↗
DOE OSTI2022

Quantitative XPS of plutonium: Evaluation of the Pu4f peak shape, relative sensitivity factors and estimated detection limits

We report that high-resolution X-ray photoelectron spectra have been acquired from sputter cleaned and in situ oxidized samples of α-plutonium and a face-centred cubic δ-plutonium–gallium alloy. The differences in the Pu4f peak shape in these two materials have been investigated, and the poorly screened satellite peaks have been quantified. Curve fitting parameters for the Pu4p 3/2 , Pu4d 5/2 , Pu4f and Pu6p 3/2 photoelectron peaks are reported, and relative sensitivity factors have been determined. The Pu4f curve fit model has been applied to data acquired using different spectrometers and alloys. Examples of quantification of the plutonium spectra are provided and minimum detection limits are calculated for common impurities in plutonium metal.

36 MATERIALS SCIENCE↗
NASA NTRS1982

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗
NASA NTRS1993

Liquid metal drop ejection

The aim of this project was to demonstrate the possibility of ejecting liquid metals using drop on demand printing technology. The plan was to make transducers for operation in the 100 MHz frequency range and to use these transducers to demonstrate the ability to eject drops of liquid metals such as gallium. Two transducers were made by indium bonding piezoelectric lithium niobate to quartz buffer rods. The lithium niobate plates were thinned by mechanical polishing to a thickness of 37 microns for operation at 100 MHz. Hemispherical lenses were polished in the opposite ends of the buffer rods. The lenses, which focus the sound waves in the liquid metal, had an F-number equals 1. A mechanical housing was made to hold the transducers and to allow precise control over the liquid level above the lens. We started by demonstrating the ability to eject drops of water on demand. The drops of water had a diameter of 15 microns which corresponds to the wavelength of the sound wave in the water. A videotape of this ejection was made. We then used a mixture of Gallium and Indium (used to lower the melting temperature of the Gallium) to demonstrate the ejection of liquid metal drops. This proved to be difficult because of the oxide skin which forms on the surface of the liquid. In some instances, we were able to eject metal drops, however, this was not consistent and reproducible. An experiment was set up at NASA-Lewis to stabilize the process of drop on demand liquid metal ejection. The object was to place the transducer and liquid metal in a vacuum station so that no oxide would form on the surface. We were successful in demonstrating that liquid metals could be ejected on demand and that this technology could be used for making sheet metal in space.

Khuri-Yakub, B. T.↗
DOE OSTI2022

Polymer-Stabilized Liquid Metal Nanoparticles as a Scalable Current Collector Engineering Approach Enabling Lithium Metal Anodes

Dendrites and dead lithium formation over prolonged cycling have long been challenges that hinder the safe implementation of metallic Li anodes. In this study, we employ polymer-stabilized liquid metal nanoparticles (LM-P NPs) of eutectic gallium indium (EGaIn) to create uniform Li nucleation sites enabling homogeneous lithium electrodeposition. Block copolymers of poly(ethylene oxide) and poly(acrylic acid) (PEO-b-PAA) were grafted onto the EGaIn surface, forming stabilized, well-dispersed NPs. Using a scalable spray coating approach, LM-P NPs were fabricated on copper current collectors, providing lithiophilic PEO sites and interactive carboxyl groups to guide Li deposition. The Li-EGaIn alloying process greatly reduced the Li + diffusion barrier, enabling fast Li transport through the coating layer, resulting in decreased nucleation overpotential. Therefore, about five times lower Li nucleation overpotential was obtained on the LM-P modified Cu with an optimal composition of the polymers than the bare Cu substrates. DFT computations was used to reveal the binding properties between the LM-P layer and Li. Due to the regulated Li plating/stripping process, as-obtained 30 μm Li anodes paired with LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM8 11 ) with a negative/positive electrode capacity (N/P) ratio ~ 10 exhibited stable cycling performance at 0.5C for over 250 cycles, with an average Coulombic efficiency of 99.55%. Ultrathin Li (1 μm) anodes with an N/P ratio ~ 0.6 were also demonstrated in Li|LiFePO 4 cells, which examined the stabilization of Li by LM-P NPs and monitored practical loadings of Li anodes that are close to anode-free systems.

25 ENERGY STORAGE↗
DOE OSTI2023

Balancing elementary steps enables coke-free dry reforming of methane

Balancing kinetics, a crucial priority in catalysis, is frequently achieved by sacrificing activity of elementary steps to suppress side reactions and enhance catalyst stability. Dry reforming of methane (DRM), a process operated at high temperature, usually involves fast C-H activation but sluggish carbon removal, resulting in coke deposition and catalyst deactivation. Studies focused solely on catalyst innovation are insufficient in addressing coke formation efficiently. Herein, we develop coke-free catalysts that balance kinetics of elementary steps for overall thermodynamics optimization. Beginning from a highly active cobalt aluminum oxide (CoAl 2 O 4 ) catalyst that is susceptible to severe coke formation, we substitute aluminum (Al) with gallium (Ga), reporting a CoAl 0.5 Ga 1.5 O 4 -R catalyst that performs DRM stably over 1000 hours without observable coke deposition. We find that Ga enhances DRM stability by suppressing C-H activation to balance carbon removal. A series of coke-free DRM catalysts are developed herein by partially substituting Al from CoAl 2 O 4 with other metals.

36 MATERIALS SCIENCE↗