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All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Effect of temperature on the electronic instability and the crystalline phase change at low temperature of V3Si type compounds

Equations assuming a Jahn-Teller type effect for the d band electrons in V3Si compounds are given, and the results of free-energy change calculations by using some approximations based on these equations are depicted. The tetragonal structure is converted to cubic as the temperature rises past T sub m which is calculated as 13 K. by the Batterman-Barrett method and is measured to be 20-5 K. Other parameters such as change of C sub p with temperature are predicted better.

Labbe, J.↗
NASA NTRS1986

Flare stars and solar bursts - High resolution in time and frequency

Coronal loops on the sun and nearby stars are studied using observations at 20-cm wavelength with high resolution in time and frequency. Observations of the dwarf M star AD Leonis with high time resolution led to the discovery of a quasi-periodic train of circularly polarized spikes with a mean periodicity of 32 + or - 5 ms and a total duration of 150 ms. Observations at closely spaced wavelengths using the VLA revealed a narrow-band structure in solar bursts and in the slowly varying radiation of the dwarf M star YZ Canis Minoris. This narrow-band emission may be attributed to electron-cyclotron maser radiation. Maser action at the second or first harmonic of the gyrofrequency implies magnetic field strengths of 250 and 500 G, respectively. Hence, observations with high resolution in time and frequency suggest coherent processs in the coronas of the sun and dwarf M stars. It is noted that the scientific potential suggested by the present data can be realized by the development of a solar-stellar synthesis radiotelescope. This instrument would be dedicated to solar and stellar observations with high angular, temporal, and frequency resolution.

Lang, K. R.↗
NASA NTRS2007

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Lee, H. S.↗
NASA NTRS2006

NASA Tech Briefs, May 2006

T-Shaped Emitter Metal Structures for HBTs Rigorous Estimation of SNR of a PSK Communication Link Advanced Ka-Band Transceiver With Monopulse Tracking EMI Filters for Low-Temperature Applications Lightweight Electronic Camera for Research on Clouds Pilot Weather Advisor System Waveguide Power-Amplifier Module for 80 to 150 GHz Better Back Contacts for Solar Cells on Flexible Substrates Topics covered include:Tunable, Highly Stable Lasers for Coherent Lidar; Improved Photon-Emission-Microscope System; Program Synthesizes UML Sequence Diagrams; Aspect-Oriented Subprogram Synthesizes UML Sequence Diagrams; Updated Computational Model of Cosmic Rays Near Earth; Software for Alignment of Segments of a Telescope Mirror; Simulation of Dropping of Cargo With Parachutes; DAVE-ML Utility Program; Robust Control for the Mercury Laser Altimeter; Thermally Stable Piezoelectric and Pyroelectric Polymers; Combustion Synthesis of Ca3(PO4)2 Net-Shape Surgical Implants; Stochastic Representation of Chaos Using Terminal Attractors; Two High-Temperature Foil Journal Bearings; Using Plates To Represent Fillets in Finite-Element Modeling; Repairing Chipped Silicide Coatings on Refractory Metal Substrates; Simplified Fabrication of Helical Copper Antennas; Graded-Index "Whispering-Gallery" Optical Microresonators; Optical Profilometers Using Adaptive Signal Processing; Manufacture of Sparse-Spectrum Optical Microresonators; Exact Tuning of High-Q Optical Microresonators by Use of UV; Automation for "Direct-to" Clearances in Air-Traffic Control; Improved Traps for Removing Gases From Coolant Liquids; and Lunar Constellation of Frozen Elliptical Inclined Orbits.

Source record↗
NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1986

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1998

Doping Scheme of Semiconducting Atomic Chains

Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

Toshishige, Yamada↗
NASA NTRS1983

Narrow spectral peaks in electrons precipitating from the slot region

Narrow L-dependent peaks commonly occur in the energy spectra of electrons precipitating from the inner radiation belt at L approximately equal to 1.5-1.85, and the cause of the peaks has been attributed to cyclotron resonance interactions with waves generated by VLF transmitters. In the slot region, L-dependent peaks have also been reported at L approximately equal to 2-3.5, but these have been predominately wider and consistent with their origin being cyclotron resonance interactions involving naturally occurring hiss. The infrequent occurrence of narrow peaks in electrons precipitating at L greater than or approximately equal to 2 is investigated. From coordinated wave and plasma density measurements it is found that if the narrow peaks are formed by first-order cyclotron resonant interactions occurring close to the magnetic equator between narrow band waves and the trapped electron population, then the equatorial plasma density gradients are unusually steep. This finding is consistent with the evidence previously obtained by other techniques for structured plasma density profiles in that L shell region of space.

Imhof, W. L.↗
NASA NTRS2010

A New Display Format Relating Azimuth-Scanning Radar Data and All-Sky Images in 3-D

Here we correlate features in a sequence of all-sky images of 630 nm airglow with the three-dimensional (3-D) structure of electron densities in the F region above Arecibo. Pairs of 180 azimuth scans (using the Gregorian and line feeds) of the two-beam incoherent scatter radar (ISR) have been plotted in cone pictorials of the line-of-sight electron densities. The plots include projections of the 630 nm airglow onto the ground using the same spatial scaling as for the ISR data. Selected sequential images from the night of 16-17 June 2004 correlate ionospheric plasma features with scales comparable to the ISR density-cone diameter. The entire set of over 100 images spanning about eight hours is available as a movie. The correlation between the airglow and the electron densities is not unexpected, but the new display format shows the 3-D structures better than separate 2-D plots in latitude and longitude for the airglow and in height and time for the electron densities. Furthermore, the animations help separate the bands of airglow from obscuring clouds and the star field.

Swartz, Wesley E.↗
NASA NTRS1990

Structural and electronic changes in the growth of mercury overlayers on Cu(001) - A helium beam scattering, LEED and ARPES study

We used ABS, LEED and angle-resolved photo-electron spectroscopy (ARPES) to study bilayer films of Hg on Cu(001). In the surface temperature range of 180 to 330 K, the first Hg layer forms two ordered phases, a c(2x2) (with coverage-0.5 of Cu(001)) and a high density (partially commensurate) c(4x4) (coverage-0.62). ARPES data show that there is little or no dispersion of the 5d band of Hg. ABS data show that this layer is not flat, with in-registry Hg atoms lying about 0.15 below the not-in-registry Hg atoms. From ABS we find that the second layer forms a completely registered c(4x4) phase. From ARPES we obtain that the second layer has an electronic structure, particularly the 5d levels, characteristic of bulk mercury. Preliminary results of calculations of the structure of the bilayer are given.

Vidali, G.↗
NASA NTRS1992

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys, and superlattices: Theoretical study of Cu/graphite bonding

The goals of the research were to provide a fundamental science basis for why the bonding of Cu to graphite is weak, to critically evaluate the previous analysis of the wetting studies with particular regard to the values used for the surface energies of Cu and graphite, and to make recommendations for future experiments or other studies which could advance the understanding and solution of this technological problem. First principles electronic structure calculations were used to study the problem. These are based on density functional theory in the local density approximation and the use of the linear muffin-tin orbital band structure method. Calculations were performed for graphite monolayers, single crystal graphite with the hexagonal AB stacking, bulk Cu, Cu(111) surface, and Cu/graphite superlattices. The study is limited to the basal plane of graphite because this is the graphite plane exposed to Cu and graphite surface energies and combined with the measured contact angles to evaluate the experimental adhesion energy.

Lambrecht, Walter R. L.↗
NASA NTRS2013

Allochthonous Addition of Meteoritic Organics to the Lunar Regolith

Preparation of lunar samples 74220,861 was discussed in detail in [3, 4]. Our analysis sequence was as follows: optical microscopy, UV fluorescence imaging, -Raman, FESEM-EDX imaging and mapping, FETEMEDX imaging and mapping of a Focused Ion Beam (FIB) extracted section, and NanoSIMs analysis. We observed fluffytextured C-rich regions of interest (ROI) on three different volcanic glass beads. Each ROI was several m2 in size and fluoresced when exposed to UV. Using FESEM/EDX, the largest ROI measured ~36 m and was located on an edge of a plateau located on the uppermost surface of the bead. The ROI was covered on one edge by a siliceous filament emanating from the plateau surface indicating it was attached to the bead while on the Moon. EDX mapping of the ROI shows it is composed primarily of heterogeneously distributed C. Embedded with the carbonaceous phase are localized concentrations of Si, Fe, Al and Ti indicating the presence of glass and/or minerals grains. -Raman showed strong D- and G-bands and their associated second order bands; intensity and location of these bands indicates the carbonaceous matter is structurally disorganized. A TEM thin section was extracted from the surface of a glass bead using FIB microscopy. High resolution TEM imaging and selected area electron diffraction demonstrate the carbonaceous layer to be amorphous; it lacked any long or short range order characteristic of micro- or nanocrystalline graphite. Additionally TEM imaging also revealed the presence of submicron mineral grains, typically < 50 nm in size, dispersed within the carbonaceous layer. NanoSIMs data will be presented and discussed at the meeting. Given the noted similarities between the carbonaceous matter present on 74220 glass beads and meteoritic kerogen, we suggest the allochthonous addition of meteoritic organics as the most probable source for the C-rich ROIs.

Thomas-Keprta, K. L.↗
NASA NTRS1998

Carbon Nanotube Based Molecular Electronics

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Srivastava, Deepak↗
NASA NTRS1984

Electronic structure and properties of magnetic defects in Co(1+x)Al(1-x) and Fe(1+x)Al(1-x) alloys

CoAl and FeAl compounds are developed along two directions. Magnetic susceptibility and specific heat at low temperature on (NiCo)Al and (CoFe)Al ternary alloys are in good agreement with band calculations. Results on magnetization and specific heat under field at low temperature on nonstoichiometric compounds show clearly the importance of the nearest neighbor effects. In the case of CoAl, the isolated cobalt atoms substituting aluminum are characterized by a Kondo behavior, and, for FeAl, the isolated extra iron atoms are magnetic and polarize the matrix. Moreover, for the two compounds, clusters of higher order play a considerable part in the magnetic properties for CoAl, these clusters also seem to be characterized by a Kondo behavior, for FeAl, these clusters whose moment is higher than in the case of isolated atoms, could be constituted of excess parts of iron atoms.

Abbe, D.↗
NASA NTRS1994

Frequency-Domain Identification With Composite Curve Fitting

Improved method of parameter identification based on decomposing single wide-band model into two or more component systems in parallel. Each component model predominates in specific frequency range. Wide-band mathematical model of system identified as two narrow-band models: one containing most of information on high-frequency components of dynamics, and one containing most of information on low-frequency components. Applicable to diverse systems, including vibrating structures, electronic circuits, and control systems.

Bayard, David S.↗
NASA NTRS2001

A Rocket Investigation of Mesospheric Eddy Diffusion Effects on Airglow and Oxygen Chemistry

A Terrier Orion rocket was launched at 0750 Z on 02/25/98 about seven minutes after the Clemson University chemical release rocket. Measurements made of the electron density by a dc probe calibrated by a capacitance probe showed several layers of electron density on a rocket ascent in the altitude range from 90 to 110 km. Rocket descent results showed several but not all of the ascent structure. From power spectral analysis of the measured electron densities, turbulent parameters are derived Measurements were made on rocket ascent and descent by an infrared radiometer of the OH Meinel (3-1) band and O2 singlet delta emissions. Profiles of the emissions are presented and discussed on both rocket ascent and descent an enhancement of the OH emission monitored by the OH radiometer was observed above 90 km. The glow was not defected by the O2 radiometer and was significantly reduced on rocket descent. Using these data and a mechanistic analysis, a profile proportional to atomic oxygen is obtained. This profile is compared to one from the ATOX probe on the rocket. A one-dimensional (1-D) photochemical model that solves the time-dependent continuity equations is used with the rocket data to investigate the odd-oxygen concentration in the near equatorial mesosphere.

Ulwick, James C.↗
NASA NTRS2005

Strain Sensitivity in Single Walled Carbon Nanotubes for Multifunctional Materials

Single walled carbon nanotubes represent the future of structural aerospace vehicle systems due to their unparalleled strength characteristics and demonstrated multifunctionality. This multifunctionality rises from the CNT's unique capabilities for both metallic and semiconducting electron transport, electron spin polarizability, and band gap modulation under strain. By incorporating the use of electric field alignment and various lithography techniques, a single wall carbon nanotube (SWNT) test bed for measurement of conductivity/strain relationships has been developed. Nanotubes are deposited at specified locations through dielectrophoresis. The circuit is designed such that the central, current carrying section of the nanotube is exposed to enable atomic force microscopy and manipulation in situ while the transport properties of the junction are monitored. By applying this methodology to sensor development a flexible single wall carbon nanotube (SWNT) based strain sensitive device has been developed. Studies of tensile testing of the flexible SWNT device vs conductivity are also presented, demonstrating the feasibility of using single walled HiPCO (high-pressure carbon monoxide) carbon nanotubes as strain sensing agents in a multi-functional materials system.

Heath, D. M.↗
NASA NTRS2012

Electron Beam Induced Luminescence of SiO2 Optical Coatings

Optical coatings of disordered thin film SiO,/SiO, samples undergoing electron beam bombardment exhibited a cathodoluminescence effect. Measurements were made of the absolute illuminance and emission spectra as functions of incident electron energy (0.2 keV to 30 keV). flux (approx. 0.1 nA/sq cm to > 100 nA/sq cm) and power (<50 nW/sq cm to > 3mW/sq cm) for coatings (approx.60 nm to approx.200 nm thick) on reflective metal substrates over a range of sample temperatures (approx.40 K to approx.400 K) and emission wavelengths (approx.260 nm to approx.5000 nm). Illuminance reached a plateau saturation intensity I(sub sat) approx. 10(exp -4)W/sq cm. scaling as [I(sub mc)/(I + I(sub mc)/I(sub sat)] as incident power I(sub mc) approached I(sub sat). Well below I(sub sat), illuminance scaled linearly with incident power for lower-energy non-penetrating radiation that deposited all of its energy in the dielectric film. At higher incident energies (> 1-5 keV) electrons penetrate the dielectric, depositing only a fraction of their energy in the dielectric film, where deposited energy scales as the ratio of film thickness to penetration range. Since electron range exhibits a peak below approx. 1 keV, the illuminance decreased with increasing energy for penetrating radiation. The temperature dependence of the illuminance. in general, increased with decreasing temperature. Changes in apparent color with temperature were also observed. Four bands in the UV/VIS/NIR range from 300 nm to 1000 nm were observed in spectral measurements; no significant luminescence was detected in a range from approx. 1000 nm to approx. 5000 nm. These different bands either increased or decreased in intensity and shifted slightly in energy with decreasing temperature. Our measurements are explained in terms of simple disordered band theory models based on atomic-scale stochastic transport of electrons in highly disordered insulating materials. The theoretical models provide a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy. and sample thickness and temperature. The observed luminescence occurs when an incident high energy electron excites a valence band electron into the conduction band. Following the excitation. a complex series of transitions take place between the extended conduction states and the long-lived localized trapped states (or chromophores) associated with structural or compositional defects in the dielectric materials. Thc transport equations and models of thc spatial and energy distribution of the trapped states below the mobility edge, their occupancy, and transitions provide microscopic scale insights into this macroscopic phenomenon. Our observations and theoretical models are also compared with similar previous room temperature studies of similar SiO2 films.

Dennison, J. R.↗