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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

We discuss the need to understand materials exposed to overlapping extreme environments such as high temperature, radiation, or mechanical stress. When these stressors are combined there may be synergistic effects that enable unique microstructural evolution mechanisms to activate. Understanding of these mechanisms is necessary for the input and refinement of predictive models and critical for engineering of next generation materials. The basic physics and underlying mechanisms require advanced tools to be investigated. The in situ ion irradiation transmission electron microscope (I 3 TEM) is designed to explore these principles. To quantitatively probe the complex dynamic interactions in materials, careful preparation of samples and consideration of experimental design is required. Particular handling or preparation of samples can easily introduce damage or features that obfuscate the measurements. There is no one correct way to prepare a sample; however, many mistakes can be made. The most common errors and things to consider are highlighted within. The I 3 TEM has many adjustable variables and a large potential experimental space, therefore it is best to design experiments with a specific scientific question or questions in mind. Experiments have been performed on large number of sample geometries, material classes, and with many irradiation conditions. The following are a subset of examples that demonstrate unique in situ capabilities utilizing the I 3 TEM. Au nanoparticles prepared by drop casting have been used to investigate the effects of single ion strikes. Au thin films have been used in studies on the effects of multibeam irradiation on microstructure evolution. Zr films have been exposed to irradiation and mechanical tension to examine creep. Ag nanopillars were subjected to simultaneous high temperature, mechanical compression, and ion irradiation to study irradiation induced creep as well. These results impact fields including: structural materials, nuclear energy, energy storage, catalysis, and microelectronics in space environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Enhancement of the Curie temperature in single-crystalline ferromagnetic LaCrGe 3 by electron irradiation-induced disorder

LaCrGe 3 has attracted attention as a potential candidate for studies of quantum phase transitions in a ferromagnetic material. The application of pressure avoids a quantum critical point by developing a new magnetic phase. It was suggested that the disorder may provide an alternative route to a quantum critical point. We used low-temperature 2.5 MeV electron irradiation to induce relatively small amounts of pointlike disorder in single crystals of LaCrGe 3 . Irradiation leads to an increase of the resistivity at all temperatures with some deviation from the Matthiessen rule. Hall effect measurements show that electron irradiation does not cause any detectable change in the carrier density. Unexpectedly, the Curie temperature, T FM , increases with the increase of disorder from approximately 90 K in pristine samples up to nearly 100 K in the heavily irradiated sample, with a tendency towards saturation at higher doses. This effect is observed both in resistivity and magnetization measurements. Although the mechanism of this effect is not entirely clear, we conclude that it cannot be caused by effective “doping” or “pressure” due to electron irradiation. Finally, we suggest that disorder-induced broadening of a sharp peak in the density of states, D⁡(E), situated at E p = E F – 0.25 eV below the Fermi energy, E F , causes an increase in D⁡(E F ), leading to an enhancement of T FM in this itinerant ferromagnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electron beam irradiation of 1,4 dioxane

Electron beam irradiation produces both, reducing and oxidizing species which facilitate the reduction of contaminants found in water and wastewater. To investigate the impact of electron beam on 1,4-dioxane, a widely used solvent which has been declared as a probable human carcinogen by the U.S. Environmental Protection Agency, a beamline was designed and commissioned at the Upgraded Injector Test Facility at Jefferson Lab. Here, wastewater samples can be irradiated with a beam energy up to 10 MeV and a beam current of up to 100 nA. Beam acceleration is achieved by two superconducting radio-frequency cavities cooled by liquid helium in a cryomodule. A beam spot with a diameter of ~5 cm was produced at the target location using a pair of raster coils. Electron beam irradiation studies were performed using 1,4-dioxane in two different matrices, de-ionized water and secondary effluent wastewater, and for two concentrations, 10 microg/L and 100 microg/L. The concentration of 1,4-dioxane after irradiation was measured as a function of dose.

Li, Xi↗
DOE OSTI2023

Development of an in situ ion irradiation scanning electron microscope

An in situ ion irradiation scanning electron microscope (I 3 SEM) has been developed, installed, and integrated into the Ion Beam Laboratory at Sandia National Laboratories. The I 3 SEM facility combines a field emission, variable pressure, scanning electron microscope, a 6 MV tandem accelerator, high flux low energy ion source, an 808 nm-wavelength laser, and multiple stages to control the thermal and mechanical state of the sample observed. The facility advances real-time understanding of materials evolution under combined environments at the mesoscale. As highlighted in multiple examples, this unique combination of tools is optimized for studying mesoscale material response in overlapping extreme environments, allowing for simultaneous ion irradiation, implantation, laser bombardment, conductive heating, cooling, and mechanical deformation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Edge-Mediated Annihilation of Vacancy Clusters in Monolayer Molybdenum Diselenide (MoSe 2 ) under Electron Beam Irradiation

Here annihilation of vacancy clusters in monolayer molybdenum diselenide (MoSe2) under electron beam irradiation is reported. In situ high-resolution transmission electron microscopy observation reveals that the annihilation is achieved by diffusion of vacancies to the free edge near the vacancy clusters. Monte Carlo simulations confirm that it is energetically favorable for the vacancies to locate at the free edge. By computing the minimum energy path for the annihilation of one vacancy cluster as a case study, it is further shown that electron beam irradiation and pre-stress in the suspended MoSe2 monolayer are necessary for the vacancies to overcome the energy barriers for diffusion. The findings suggest a new mechanism of vacancy healing in 2D materials and broaden the capability of electron beam for defect engineering of 2D materials, a promising way of tuning their properties for engineering applications.

2D materials↗
NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗
DOE OSTI2024

Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing

We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.↗
DOE OSTI2022

Modeling electron beam irradiation of methane

We built a chemical kinetic model for the electron beam irradiation of methane and report simulation results with dose rates ranging from 2 to 200 kGy s -1 at 298 K and 1 atm pressure. The model contains 92 species and 778 gas-phase reactions. We report the time evolution of concentrations of stable products (including H 2 , C 2 H 6 , C 3 H 8 , C 2 H 4 , C 3 H 6 , C 4 H 10 , C 2 H 2 , and C 3 H 4 ) as well as some radicals and ions. Here we discuss how yields of products depend on dose rate and how they change during the course of irradiation. To understand the processes controlling product formation, we quantify the extent to which various reactions produce and destroy major products and the key radicals and ions. Normalized sensitivity coefficients are computed for the production of stable products to gain further insight into factors controlling product yields. We were able to reduce the mechanism to 63 species and 331 reactions while incurring less than 5% error in the final concentrations of stable products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1981

Electrostatic discharging behaviour of Kapton irradiated with electrons

The electrostatic charging and discharging of Kapton when irradiated with monoenergetic electrons of 5 to 30 keV energy were studied. The leakage currents and rates of discharging always increased with the incident electron energy and flux, whereas the surface voltage showed a more complex behavior depending on the thickness of the material: for the thinner films it exhibited a maximum and then fell at higher energies. The surface voltage, the rate of discharging, and the peak current and total charge flow during a discharge were enhanced as the temperature was decreased from 70 C to -180 C, and were accompanied by a decreasing leakage current. Visible light or the presence of an aluminum coating on the irradiated surface caused reductions in the surface voltage and changes in the discharging characteristics. The results are discussed in terms of the leakage currents and the secondary emission of electrons. Photomicrographs taken after irradiation, and photographs of samples during irradiation, show good correlations between the positions of light flashes and of pinholes produced by the discharge arcs.

Verdin, D.↗
NASA NTRS1989

Thermal annealing of GaAs concentrator solar cells

The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

Curtis, H. B.↗
DOE OSTI2026

Mesoscale atomic engineering in a crystal lattice

Controlling individual atoms using lasers, ion traps and scanning probe tips has transformed our understanding of matter and enabled breakthroughs in quantum science. Extending this control into three-dimensional (3D) solids and across mesoscopic scales, however, remains a foundational challenge. Electron irradiation in electron microscopes is known to induce atomic displacements, and atomic manipulation has been proposed and demonstrated. Yet repeated and deterministic control has remained elusive. Here, in this study, we demonstrate deterministic atomic engineering in a 3D crystal, creating ordered arrangements of more than 40,000 user-defined defects within minutes across a 150 nm × 100 nm × 13 nm volume. By steering individual Cr atoms in the magnetic semiconductor CrSBr into selected interstitial sites using an electron beam directed with sub-20-pm-scale accuracy, we create vacancy–interstitial complexes. The resulting impurity array forms a mesoscale crystal embedded within the host lattice, a new form of engineered artificial matter that remains stable at room temperature and outside the microscope. By tracking Cr atom displacements, we identify conditions under which the defect structures are predictable. Our calculations suggest that these defects form correlated impurity states with intra-defect optical transitions and inter-defect kinetic and Coulomb interactions. This establishes a generalizable platform for atomic defect engineering at mesoscopic, and potentially macroscopic, scales, opening opportunities for scalable quantum technologies, including deterministic colour-centre placement, quantum simulation of many-body lattice models and atomic-scale manufacturing.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Radiation Effects Model for Ultra-Thin Silicon Solar Cells

This work is focused on investigation of radiation effects in Ultra-Thin Silicon solar cells with a particular emphasis on electron irradiation. The study is motivated by the application of these solar cells, developed by Solestial, Inc., for powering space missions, including those led by NASA, the Department Of Defence (DOD), and commercial satellite missions. Our research encompasses both experimental and theoretical approaches, addressing unique challenges posed by ultra-thin solar cell technology that deviates from the traditional models. From the experimental point of view, the test structures were irradiated with 1 MeV electrons up to the fluence of 1E+15 e/cm$^{2}$. Radiation effects due to accumulated electron dose were noticed as a drop in open-circuit voltage (Voc). An analytical expression for modeling the Voc characteristic of the UT-Si cell after exposure to electron irradiation was formulated and subsequently compared with experimental data. The theoretical foundation of the proposed approach builds upon the Non-Ionising Energy Loss (NIEL) concept, a fundamental parameter in addressing radiation damage modelling and survivability predictions.

Fedoseyev, Alex↗
NASA NTRS1981

Experimental validation of a numerical model predicting the charging characteristics of Teflon and Kapton under electron beam irradiation

The effect differential charging of spacecraft thermal control surfaces is assessed by studying the dynamics of the charging process. A program to experimentally validate a computer model of the charging process was established. Time resolved measurements of the surface potential were obtained for samples of Kapton and Teflon irradiated with a monoenergetic electron beam. Results indicate that the computer model and experimental measurements agree well and that for Teflon, secondary emission is the governing factor. Experimental data indicate that bulk conductivities play a significant role in the charging of Kapton.

Hazelton, R. C.↗