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Results for “electrical resistivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Use of an electrical resistance hygrometer to measure human sweat rates

The application of the resistance hygrometer as a tool to measure the localized sweat rate from the human body in both the active and passive sweat regions was studied. It was found that the physiological function of the skin membrane and fluid carrier transport phenomena from the outer skin have an indistinguishable effect on the observed findings from the instrument. The problems associated with the resistance hygrometer technique are identified and the usage of the instrument in the physiological experimentation from the engineering standpoint is evaluated.

Suga, T.↗
NASA NTRS1994

Development of radiation resistant electrical cable insulations

Two new polyethylene cable insulations have been formulated for nuclear applications and have been tested under gamma radiation. Both insulations are based on low density polyethylene, one with PbO and the other with Sb2O3 as additives. The test results show that the concept of using inorganic antioxidants to retard radiation initiated oxidation (RIO) is viable. PbO is more effective than Sb2O3 in minimizing RIO.

Lee, B. S.↗
NASA NTRS2009

Investigation of Thickness and Electrical Resistivity of the Current Sheets in Solar Eruptions

A discussion of the thickness of current sheets in solar eruptions led Lin et al. in 2007 to estimate very large values for the effective resistivity. This paper addresses some questions raised by that paper. The limb synoptic map technique is applied to find the current sheet thickness to be between 5.OE4 and 4.6E5 km, increasing with both time and altitude. The possibility that large apparent values result from projection effects is examined and rejected. Theoretical scaling laws corroborate this conclusion.

Lin, J.↗
DOE OSTI2023

Time-lapse electrical resistivity and induced polarization monitoring of a simulated ecosystem-scale coastal flooding experiment

Accurate estimation of the spatio-temporal variation in soil saturation and salt concentration is valuable for calibrating and evaluating Earth system models as well as detecting important eco-hydrological interactions. Such representative models play a vital role in investigating the stability of ecosystems facing changing hydrologic disturbance regimes. Ecosystem-scale field experiments are a useful way to capture hydrological disturbance and gain a deeper understanding of the complex mechanisms driving environmental changes. However, previous studies have not explored the use of quantitative imaging at a large spatial scale to reproduce breakthrough curves and inform system response and recovery following hydrologic disturbance events. Therefore, in this study, non-invasive geophysical methods were used to capture the spatio-temporal variation in subsurface saturation and salt concentrations during an ecosystem-scale coastal forest flooding experiment.

coastal↗
NASA NTRS1993

Apparatus Measures Seebeck Coefficient And Resistivity

Electrical measurements made by four point probes, two of which double as temperature probes. Laboratory apparatus measures both Seebeck coefficients and electrical resistivities of candidate thermoelectric materials at temperatures from ambient to 1,300 K. Apparatus makes possible to take both measurements alternately and in rapid succession during same heating cycle, thereby reducing distortion.

Zoltan, Leslie D.↗
NASA NTRS2001

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

DiMeo, Jr., Frank↗
NASA NTRS1985

An electrochemical study of the corrosion behavior of primer coated 2219-T87 aluminum

The corrosion behavior for 2219-T87 aluminum coated with various primers, including those used for the external tank and solid rocket boosters of the Space Shuttle Transportation System, were investigated using electrochemical techniques. Corrosion potential time, polarization resistance time, electrical resistance time, and corrosion rate time measurements were all investigated. It was found that electrical resistance time and corrosion rate time measurement were most useful for studying the corrosion behavior of painted aluminum. Electrical resistance time determination give useful information concerning the porosity of paint films, while corrosion rate time curves give important information concerning overall corrosion rates and corrosion mechanisms. In general, the corrosion rate time curves all exhibited at least one peak during the 30 day test period, which was attributed, according to the proposed mechanisms, to the onset of the hydrogen evolution reaction and the beginning of destruction of the protective properties of the paint film.

Danford, M. D.↗
DOE OSTI2022

Separation of Kondo lattice coherence from crystal electric field in CeIn 3 with Nd substitutions

The Ce m M n In 3m+2n (m=1,2;n=0,1) family has been one of the most studied families of heavy fermion compounds. This family has revealed many interesting low-temperature physics phenomena, like quantum critical points, heavy fermion superconductivity, and non-Fermi liquid behavior, when these materials are exposed to pressure, magnetic fields, and/or chemical substitution. In this work, we provide a thorough investigation of the Ce 1-x Nd x In 3 phase diagram through single crystal synthesis, x-ray diffraction, energy-dispersive spectroscopy, magnetic susceptibility, and electrical resistivity measurements. Previous electrical resistivity measurements on CeIn 3 reveal a broad maximum, T max ~50 K, which has been associated with the Kondo lattice coherence crossover and/or the crystal electric field depopulation effect as the 4f electrons condense from the high-energy quartet down to the ground state doublet. Our findings show that in the most disordered substitution region, x=0.4–0.5, these features disjoin to reveal two distinct broad humps in electrical resistivity measurements. Magnetic susceptibility and electrical resistivity data on Ce 1-x Nd x In 3 also reveal the antiferromagnetic ordering competition between CeIn 3 and NdIn 3 , where the T N of CeIn 3 is linearly suppressed to a critical concentration of x Nd ~0.6. This concentration is slightly lower than what was previously reported in nonmagnetically substituted Ce 1-x La x In 3 . Our magnetic susceptibility measurements and subsequent simulations show that in the CeIn 3 antiferromagnetic regime, x Nd ≤0.4, the Nd ions act as free paramagnets. The large magnitude of the associated paramagnetic response then masks the overlapping antiferromagnetic ordering signature of the Ce ions. Overall our study further sheds light on the underlying crystal electric field and Kondo lattice coherence interactions within the Ce m M n In 3m+2n family and could stimulate further studies of these systems via neutron diffraction or under applied pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗