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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗
NASA NTRS1986

Measurement of carrier transport and recombination parameter in heavily doped silicon

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Swanson, Richard M.↗
NASA NTRS1987

High-efficiency GaAs concentrator space cells

High efficiency Al sub x Ga sub 1-x As/GaAs heteroface solar concentrator cells have been developed for space applications. The cells, which were grown using metalorganic chemical vapor deposition (MOCVD), have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as the p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm by 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C.

Werthen, J. G.↗
NASA NTRS1986

High-efficiency GaAs solar concentrator cells for space and terrestrial applications

High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.

Hamaker, H. C.↗
NASA NTRS1988

The effect of Al2O3, CaO, Cr2O3 and MgO on devitrification of silica

The effect of doping on devitrification of vitreous silica was studied at 1100, 1200, and 1300 C. Dispersion of dopants on a molecular scale was accomplished via a sol-gel technique. All dopants accelerated the devitrification of silica but to different degrees. The most active was CaO followed by MgO, Al2O3, and Cr2O3. Pure silica and silica containing Cr2O3 and Al2O3 devitrified to alpha-cristobalite only, whereas silica doped with CaO and MgO produced alpha-quartz and alpha-cristobalite. It appears that prolonged heat treatment would cause alpha-quartz to transform to alpha-cristobalite.

Zaplatynsky, Isidor↗
NASA NTRS1986

Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment

Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research.

Witt, A. F.↗
NASA NTRS1989

Structural comparison of nickel electrodes and precursor phases

A summary of previous Raman spectroscopic results and a discussion of important structural differences in the various phases of active mass and active mass precurors are presented. Raman spectra provide unique signatures for these phases, and allow one to distinguish each phase, even when the compound is amorphous to X-rays (i.e., does not scatter X-rays because of a lack of order and/or small particle size). The structural changes incurred during formation, charge and discharge, cobalt addition, and aging will be discussed and related to electrode properties. Important structural differences include NiO2 layer stacking, nonstoichiometry (especially cation-deficit nonstoichiometry), disorder, dopant content, and water content. The results indicate that optimal nickel active mass is non-close packed and nonstoichiometric. The formation process transforms precursor phases into this structure. Therefore, the precursor disorder, or lack thereof, influences this final active mass structure and the rate of formation. Aging processes induce structural change which is believed to be detrimental. The role of cobalt addition can be appreciated in terms of structures favored or stabilized by the dopant. In recent work, the in situ Raman technique to characterize the critical structural parameters was developed. An in situ method relates structure, electrochemistry, and preparation. In situ Raman spectra of cells during charge and discharge, either during cyclic voltammetry or under constant current conditions were collected. With the structure-preparation knowledge and the in situ Raman tool, it will be possible to define the structure-property-preparation relations in more detail. This instrumentation has application to a variety of electrode systems.

Cornilsen, Bahne C.↗
NASA NTRS1989

Characterization of ceramics and intermetallics fabricated by self-propagating high-temperature synthesis

Three efforts aimed at investigating the process of self-propagating high temperature synthesis (SHS) for the fabrication of structural ceramics and intermetallics are summarized. Of special interest was the influence of processing variables such as exothermic dopants, gravity, and green state morphology in materials produced by SHS. In the first effort directed toward the fabrication of SiC, exothermic dopants of yttrium and zirconium were added to SiO2 or SiO2 + NiO plus carbon powder mix and processed by SHS. This approach was unsuccessful since it did not produce the desired product of crystalline SiC. In the second effort, the influence of gravity was investigated by examining Ni-Al microstructures which were produced by SHS combustion waves traveling with and opposite the gravity direction. Although final composition and total porosities of the combusted Ni-Al compounds were found to be gravity independent, larger pores were created in those specimens which were combusted opposite to the gravity force direction. Finally, it was found that green microstructure has a significant effect on the appearance of the combusted piece. Severe pressing laminations were observed to arrest the combustion front for TiC samples.

Hurst, Janet B.↗
NASA NTRS1989

Polyimide Matrix composites: Polyimidesulfone/LARC-TPI (1:1) blend

Polyimide matrix composites were fabricated from unidirectional unsized AS-4 carbon fiber and a doped 1:1 blend of two polyimides: benzophenone dianhydride-3,3'-diamino diphenylsulfone (PISO2) and benzophenone dianhydride-3,3'-diamino benzophenone (LARC-TPI). To enhance melt flow properties, the molecular weight of the PISO2 was controlled by end-capping with phthalic anhydride and addition of 5 percent by weight p-phenylene diamine-phthalic anhydride bisamic acid dopant. Prepreg was drum-wound using a diglyme slurry comprised of the soluble polyamideacid of PISO2, the soluble bisamideacid of the dopant, and the insoluble imidized LARC-TPI powder. Melt flow studies with a rotary rheometer and parallel plate plastometer on neat resin and prepreg helped develop an optimum cure cycle. Composite mechanical properties at room and elevated temperatures, dry and moisture-saturated, were evaluated, including short beam shear strength and flexure, tensile, shear, and compression properties. Two 18 in. x 24 in. skin-stringer panels were fabricated, one of which was tested in compression to failure.

Johnston, Norman J.↗
NASA NTRS1989

The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

Jamison, K. D.↗
NASA NTRS1990

Microstructure and magnetization of doped Y-Ba-Ca-O materials prepared by melt quench and post annealing method

Y-Ba-Cu-O bulk materials prepared using the melt quench and post annealing method were shown to have very high maximum as well as remanent magnetization. Studies were carried out on materials prepared using this method which deviate from the Y:Ba:Cu = 1:2:3 stoichiometry. In one series of materials, only the stoichiometry was changed, in particular by introducing an excess of yttrium. In other cases, dopants including several rare earths were introduced. Effects of variations in composition on microstructure and phase evolution are discussed, as well as effects on the magnetic susceptibility and on the magnetization. The results show that doped materials can exhibit improvements in magnetic properties. Furthermore, the use of dopants sheds light on the role of defect sites in flux pinning.

Hojaji, H.↗
NASA NTRS1989

Recent advances in efficient long-life, eye-safe solid state and CO2 lasers for laser radar applications

The key problems in the development of eye-safe solid-state lasers are discussed, taking into account the energy transfer mechanisms between the complicated energy level manifolds of the Tm, Ho, Er ion dopants in hosts with decreasing crystal fields such as YAG or YLF. Optimization of energy transfer for efficient lasing through choice of dopant concentration, power density, crystal field and temperature is addressed. The tailoring of energy transfer times to provide efficient energy extraction for short pulses used in DIAL and Doppler lidar is considered. Recent advances in Pt/SnO2 oxide catalysts and other noble metal/metal oxide combinations for CO2 lasers are discussed. Emphasis is given to the dramatic effects of small quantities of H2O vapor for increasing the activity and lifetime of Pt/SnO2 catalysts and to increased lifetime operation with rare isotope (C-12)(O-18)2 lasing mixtures.

Hess, R. V.↗
NASA NTRS1989

Polyimide matrix composites - Polyimidesulfone/LARC-TPI (1:1) blend

Polyimide matrix composites were fabricated from unidirectional unsized AS-4 carbon fiber and a doped 1:1 blend of two polyimides: PISO2 and LARC-TPI. To enhance melt flow properties, the molecular weight of the PISO2 was controlled by end-capping with phthalic anhydride and addition of 5 percent by weight p-phenylenediamine-phthalic anhydride bisamic acid dopant. Prepreg was drum-wound using a diglyme slurry comprised of the soluble polyamideacid of PISO2, the soluble bisamideacid of the dopant, and the insoluble imidized LARC-TPI powder. Melt flow studies with a rotary rheometer and parallel plate plastometer on neat resin and prepreg helped develop an optimum cure cycle. Composite mechanical properties at room and elevated temperatures, dry and moisture-saturated, were evaluated, including short beam shear strength and flexure, tensile, shear, and compression properties. Two 18 x 24-inch skin-stringer panels were fabricated, one of which was tested in compression to failure.

Johnston, Norman J.↗
NASA NTRS1990

Signal processing of spectroscopic data for engine diagnostic applications

A description is given of research based on a series of spectra taken from the Diagnostic Test Facility (DTF) plume at NASA-Stennis Space Center. The DTF was designed to obtain spectra scaling approximately to that of the SSME, yet allow full control of dopant and thruster conditions. DTF spectra were used in this research to develop a technique for quantitative identification of an alloy. A mathematically based identification technique was tried, with reasonable sucess for one-element alloys, and only fair success for a two-element alloy. This approach was found to have the simplicity required for DSP implementation, thus allowing real-time diagnosis as a possibility. Spreadsheets were organized to handle the proliferation of development equations required, which number about 50,000. The identification work reinforced the presence of nonlinearity to dopant level.

Nail, Bert↗
NASA NTRS1990

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗
NASA NTRS1991

Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

Akbar, S. A.↗
NASA NTRS1992

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Lin, T. L.↗
NASA NTRS1993

Excimer laser processing of backside-illuminated CCDS

An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.

Russell, S. D.↗