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At least 145 records · Page 8

Diffusion-mediated chemical concentration variation and void evolution in ion-irradiated NiCoFeCr high-entropy alloy

High-entropy alloys (HEAs) are proposed as potential structural materials for advanced nuclear systems, but little is known about the response of matrix chemistry in HEAs upon irradiation. Here, we reveal a substantial change of matrix chemical concentration as a function of irradiation damage (depth) in equiatomic NiCoFeCr HEA irradiated by 3 MeV Ni ions. After ion irradiation, the matrix contains more Fe/Cr in depth shallower than ~900–1000 nm but more Ni/Co from ~900–1000 nm to the end of the ion-damaged region due to the preferential diffusion of vacancies through Fe/Cr. Preferential diffusion also facilitates migration of vacancies from high radiation damage region to low radiation damage region, leading to no void formation below ~900–1000 nm and void formation around the end of the ion-damaged region at a fluence of 5 × 10 16 cm -2 (~123 dpa, displacements per atom, peak dose under full cascade mode). As voids grow significantly at an increased fluence (8 × 10 16 cm -2 , 196 dpa), the matrix concentration does not change dramatically due to new voids formed below ~900–1000 nm.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Diffusion-mediated chemical concentration variation and void evolution in ion-irradiated NiCoFeCr high-entropy alloy

High-entropy alloys (HEAs) are proposed as potential structural materials for advanced nuclear systems, but little is known about the response of matrix chemistry in HEAs upon irradiation. Here, we reveal a substantial change of matrix chemical concentration as a function of irradiation damage (depth) in equiatomic NiCoFeCr HEA irradiated by 3 MeV Ni ions. After ion irradiation, the matrix contains more Fe/Cr in depth shallower than ~900–1000 nm but more Ni/Co from ~900–1000 nm to the end of the ion-damaged region due to the preferential diffusion of vacancies through Fe/Cr. Preferential diffusion also facilitates migration of vacancies from high radiation damage region to low radiation damage region, leading to no void formation below ~900–1000 nm and void formation around the end of the ion-damaged region at a fluence of 5 × 10 16 cm –2 (~123 dpa, displacements per atom, peak dose under full cascade mode). As voids grow significantly at an increased fluence (8 × 10 16 cm –2 , 196 dpa), the matrix concentration does not change dramatically due to new voids formed below ~900–1000 nm.

36 MATERIALS SCIENCE↗

High-performance visible/UV CCD focal plane technology for spacebased applications

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

Burke, B. E.↗

Radiation response issues for infrared detectors

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Kalma, Arne H.↗

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Development of TID Hardness Assurance Methodologies to Capitalize on Statistical Radiation Environment Models

We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.

Total Ionizing Dose↗

Development of TID Hardness Assurance Methodologies to Capitalize on Statistical Radiation Environment Models

We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.

Total ionizing dose↗

Assessment of thermal and radiation induced creep in the dual cooled lead lithium blanket

The creep in recently designed blanket for the fusion nuclear science facility is described by decomposing it into thermal, irradiation and cavity swelling creep. Initial estimates of thermal creep using elastic high temperature rules showed that the recent heat transfer improvements at the first wall (FW) is feasible, and the FW can withstand heat flux of 0.35 MW/m 2 at 3000 hrs without rupture. A viscoplastic model that is based on Norton's power law and relies on Multiphysics coupling of solid mechanics and heat transfer modules is used to capture the inelastic deformation in the blanket. Results showed that the design peak heat flux of 0.25 MW/m 2 produced maximum thermal creep strain of 0.45 % and the relaxation of the thermal stress at the FW. Irradiation creep is prescribed to be proportional to the displacement damage dose and applied stress. The displacements from irradiation creep radially decrease from the FW to the back wall, but the maximum deformation is found at the back wall that is connected to the Helium manifold due to the high stresses at the region. In conclusion, cavity swelling creep is dominant at steady state and combined with radiation creep to produce displacement of about 8 mm at the FW.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗

Heavy ion irradiation effects on CrFeMnNi and AlCrFeMnNi high entropy alloys

Co-free but Al-included medium/high entropy alloys (M/HEAs) have gained increasing interests due to their lower cost and the potential to tune the multi-phase microstructure. The irradiation response of two Co-free HEAs, face-centered cubic (FCC) CrFeMnNi with limited Cr enriched α' phase and body-centered cubic (BCC) AlCrFeMnNi with B2s phase and nanoprecipitates were explored. Ion irradiations using 5 MeV Fe 2+ ions were performed at 500°C to a peak fluence of 50 and/or 100 displacements per atom (dpa). In dual-phase AlCrFeMnNi, there was no significant radiation induced segregation or chemical intermixing at the coherent matrix (FeCrMn-rich)/second phase (AlNi-rich) boundaries. In CrFeMnNi, limited voids were only detected at the peak damage location of ~ 50 dpa. On the other hand, voids were widely distributed in AlCrFeMnNi: under 50 and 100 dpa irradiation conditions, voids were found with larger dimension and denser distribution in the FeCrMn-rich matrix, smaller and slightly lower density in an AlNi-rich second phase. In addition, the diameter of the FeCMn-rich nanoprecipitates didn't reveal any tendency of dissolution or growth. This is correlated with their superior structural stability against irradiation. Significant radiation-induced hardening (increases from 3.8 ± 0.2 GPa to 4.7 ± 0.6 GPa) was measured in CrFeMnNi, but only ~ 4% hardness increase (from 7.4 ± 0.8 GPa to 7.7 ± 0.4 GPa) was noted in AlCrFeMnNi. Finally, in addition to the radiation-induced defects, such as voids, dislocation loops and point defects, other factors, such as chemical short-range ordering may play an important role.

36 MATERIALS SCIENCE↗

Characterization of proton-induced damage in thick, p-channel skipper-CCDs

Here, in this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their single-electron/single-photon sensitivity after receiving a fluence on the order of 10 10 protons/cm 2 . Using the pocket-pumping technique, we quantify and characterize the proton-induced defects from displacement damage. We report an overall trap density of 0.134 traps/pixel for a displacement damage dose of 2.3 × 10 7 MeV/g. Three main proton-induced trap species were identified, V 2 , C i O i and V n O m , and their characteristic trap energies and cross sections were extracted. We found that while divacancies are the most common proton-induced defects, C i O i defects have a greater impact on charge integrity at typical operating temperatures because their emission-time constants are comparable or larger than typical readout times. To estimate ionization damage, we measure the characteristic output transistor curves. We found no threshold voltage shifts after irradiation. Our results highlight the potential of skipper-CCDs for applications requiring high-radiation tolerance and can be used to find the operating conditions in which effects of radiation-induced damage are mitigated.

47 OTHER INSTRUMENTATION↗

Investigation of ion irradiation effects on mineral analogues of concrete aggregates

Irradiation can cause prominent damage to reactor concrete aggregates leading to amorphization, strength and modulus decrease, radiation induced volume expansion (RIVE) and micro-cracking, which limits their long-term performance. Here, to develop an improved understanding of irradiation effects in concrete, three mineral analogues of concrete aggregates (limestone, marble and quartzite) were irradiated by 5.5 MeV He ions and 13 MeV Ni ions to surface doses of 0.011 displacements per atom (dpa) and 0.23 dpa, respectively, at room temperature. The two different ion species allow irradiation spectrum effects (ionizing and displacive) to be examined. Irradiation induced cracks were observed in He irradiated limestone and marble, and Ni irradiated quartzite. Full amorphization was observed in Ni irradiated quartzite with 14.3 % RIVE, and ∼25 % hardness and modulus decrease, while almost no change was observed in He irradiated quartzite except 4.35 % RIVE, revealing a possible ionization enhanced diffusion effect for high energy light ions. Furthermore, partial amorphization was observed in Ni irradiated marble and limestone matrix with a 12 % hardness decrease in marble while no amorphization was observed for He irradiation with a 20 % hardness increase in limestone matrix. The role of knock-on damage and irradiation spectrum on amorphization, volumetric expansion and mechanical property changes are discussed. Moreover, the onset and critical doses for amorphization and RIVE in quartz are obtained for ion irradiations at room temperature. The dose dependence of RIVE exhibits a delay compared to the amorphization behavior. The superior irradiation resistance of calcite phase compared to quartz phase implies there could be advantages to using calcareous aggregates and lowering the usage of siliceous aggregates for concrete in nuclear power plants for extended operation beyond 60 years. However, other effects such as corrosion, aging and reactions during severe accidents should also be considered, and further investigations are needed.

Amorphous↗

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

Radiation-induced property changes in materials originate from the energy transfer from an incoming particle to the existing lattice, displacing atoms. The displaced atoms can cause the formation of extended defects including dislocation loops, voids, or precipitates. The non-equilibrium defects created during damage events determine the extent of these larger defects and are a function of dose rate, material, and temperature. However, these defects are transient and can only be probed indirectly. Herein, we present direct experimental measurements and evidence of irradiated non-equilibrium vacancy formation, where in situ positron annihilation spectroscopy was used to prove the generation of non-equilibrium defects in silicon.

36 MATERIALS SCIENCE↗

Dose-dependent structural and electron-density features in the lytic polysaccharide monooxygenase NcAA9D

Structural studies of copper-containing lytic polysaccharide monooxygenases (LPMOs) by X-ray crystallography are often complicated by radiation damage. In this study, we analyze a series of 36 X-ray crystal structures of NcAA9D, a Neurospora crassa AA9-family LPMO, determined from data collected at cryogenic temperature from a single crystal to investigate the progressive effects of radiation damage at the active site of this enzyme. We report new insights into the dose-dependence of active-site geometry in LPMOs and utilize the unique pre-bound dioxygen site of NcAA9D to analyze the impact of X-ray dose on the electron density of this species. It is well established that photoreduction of the LPMO active-site copper(II) leads to expulsion of its water ligands. We further characterize this displacement and the corresponding electron-density smearing, a phenomenon that can lead to the erroneous modeling of copper-bound dioxygen species. These findings suggest that radiation-dose series collected from a single crystal provide invaluable data to support unambiguous assignment of radiation-sensitive intermediates at the active site of LPMOs and other radiation-sensitive redox enzymes.

Miller, Samuel [ORNL] (ORCID:0009000459491817)↗

Irradiation-induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN

Here, recent work to evaluate the prospects for surface acoustic wave (SAW) devices fabricated on bulk aluminum nitride (AlN) for elevated temperature and radiation environments is reported and discussed. The design and fabrication of an array of SAW devices using commercial wafers is described, including the non-standard fabrication approach taken to overcome the stress-induced warpage of the 50 mm diameter AlN substrates. Radio frequency performance characterization of the SAW devices, with resonance frequencies ranging from 0.5 GHz to 1.5 GHz, is described. The linear temperature coefficient of frequency (TCF) near room temperature was measured and is compared to theoretical results from other investigators. Further, the effects of 8 MeV Al ion irradiation at 300°C and 500°C to damage levels of 0.01, 0.1 and 1 displacements per atom (dpa), as a proxy for neutron irradiation, was investigated. The ion irradiation damage was observed to decrease the SAW resonant frequency, and this effect is characterized and discussed. Significant degradation in the conductivity of the Ti/Al electrodes of the SAW devices was also observed and characterized. These experimental results provide a basis for further investigation of the prospects for development of SAW sensor devices in bulk AlN material for application in elevated temperature and radiation environments.

36 MATERIALS SCIENCE↗

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Neutronics Analysis of Shielding Material Alternative to Tungsten Carbide in the FESS-FNSF Facility

Neutron transport calculations have been performed on advanced shielding materials. Metal hydrides and borohydrides were evaluated to find an alternative to tungsten carbide (WC), which is used in the in-vessel components. The study was conducted using a 22.5° sector and a detailed 360° geometry of the Fusion Energy System Studies-Fusion Nuclear Science Facility (FESS-FNSF) using OpenMC and FENDL-3.2b nuclear data library. Here, the neutronics analysis in this article was concentrated on calculating total nuclear (neutron and photon) heating at the magnet and the radiation damage of the inboard vacuum vessel (IBVV). For example, yttrium hydride (YH 2 ) and vanadium hydride (VH 2 ) showed lower radiation damage values compared to WC and other metals. Whereas alternative shielding materials did not show a significant change in the magnet nuclear heating.

36 MATERIALS SCIENCE↗

Performance evaluation of pulse shape discrimination capable organic scintillators for space applications

Scintillators with pulse-shape discrimination (PSD) capability are of great interest to many fields in the scientific community. The ability to discern a gamma ray from a neutron using PSD varies between different types of scintillator materials and dopants. Here a new generation of organic scintillator materials with PSD capability were studied to determine their radiation hardness to neutron and gamma-ray radiation. The PSD capability, average pulse shapes, and light output of four types of organic scintillator were characterized before and after neutron and gamma-ray irradiation. The main goal of this investigation is to study the effects of long-term irradiation that may be experienced in space applications on the light output and particle discriminating capabilities of each material. EJ-270, EJ-276, organic glass, and Stilbene were tested. Damage due to neutron irradiation (displacement damage) was not observed in any of the scintillators up to 2.56 x 10 11 n/cm 2 , except for Stilbene which showed a small (12%) decrease in light output. All scintillators presented some light output reduction after gamma-ray irradiation (total ionizing dose), with reductions of 17% (EJ-276 and OGS), 32% (EJ-270), and 42% (Stilbene) observed immediately after 100 kRad.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗