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At least 145 records · Page 8

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NASA NTRS1999

Periodic Excitation for Jet Vectoring and Enhanced Spreading

The effects of periodic excitation on the evolution of a turbulent jet were studied experimentally. A short, wide-angle diffuser was attached to the jet exit and excitation was introduced at the junction between the jet exit and the diffuser inlet. The introduction of high amplitude periodic excitation at the jet exit enhances the mixing and promotes attachment of the jet shear-layer to the diffuser wall. Vectoring is achieved by applying the excitation over a fraction of the circumference of the circular jet, enhancing its spreading rate on the excited side and its tendency to reattach to that side. Static deflection studies demonstrate that the presence of the wide-angle diffuser increases the effectiveness of the added periodic momentum due to a favorable interaction between the excitation, the jet shear-layer and the diffuser wall. This point was further demonstrated by the evolution of a wave packet that was excited in the jet shear-layer. Strong amplification of the wave packet was measured with a diffuser attached to the jet exit. The turbulent jet responds quickly (10-20 msec) to step changes in the level of the excitation input. The response scales with the jet exit velocity and is independent of the Reynolds number. Jet deflection angles were found to be highly sensitive to the relative direction between the excitation and the jet flow and less sensitive to the excitation frequency. The higher jet deflection angles were obtained for a diffuser length of about two diameters and for diffusers with half-angles greater than 15 degrees.

Pack, LaTunia G.↗

DOE OSTI2021

Update on NNL TSL Evaluations and Validation [Slides]

12 new/revised TSL evaluations were contributed to ENDF/B-VIII.1. The thermal diffusion length $L$ is an integral property of a single material’s absorption and scattering cross sections (both differential and integral). No other neutron reactions or materials are involved. The MC21-calculated $L$ for water is consistent with the spread of experimental data and is sufficiently sensitive to different H-H 2 O TSL physics models to use the method as a TSL integral performance benchmark. Modern high-quality diffusion experiments at elevated $T$ would allow direct low-cost physics benchmarking of water TSLs when public elevated-$T$ critical benchmarks are limited. NNL is working with LLNL and RPI to develop experimental PNDA capability. An ICSBEP Fundamental Physics benchmark of the Nassar and Murphy PNDA experiment is being developed to provide an example of how to evaluate these type of benchmarks.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2020

Validation of Thermal Scattering Laws for Light Water at Elevated Temperatures with Diffusion Experiments

Light water is the most important neutron moderator in many reactor applications. Thermal neutron scattering kernels for H bound in H 2 O are represented by ENDF-format thermal scattering laws (TSLs) evaluated at discrete temperatures T . Nuclear data evaluations are conventionally validated utilizing a combination of critical benchmarks and experimental cross section data. Existing public critical benchmarks may be inadequate for testing water TSLs over the full range of T of interest in reactor applications, and experimental thermal scattering cross section data for water is sparse at elevated T . In this work, MC21 is used to simulate the decay of the equilibrium thermal neutron flux in light-water spheres of several radii. The fundamental-mode time eigenvalue $\mathcal{a}$ is calculated at 22 °C and 227 °C (at saturation pressure) for each sphere using three different H-H 2 O TSLs. Fitting $\mathcal{a}$ to a polynomial function of geometric buckling allows calculation of the thermal neutron diffusion length L . Extrapolation lengths are treated as a function of the transport mean free path and geometry. Experimental L data from 25 publications at 49 temperatures (from 10 °C to 295 °C), computed by several different time-dependent and space-dependent decay methods, is used to develop an empirical fit of L vs. T . The MC21-calculated L for the TSLs tested are within ±1% of the predicted values at 22 °C and 227 °C. This validation approach, which may be repeated at arbitrary T , constitutes an integral benchmark specific to and characterizing the detailed physics of the thermal scattering kernel applied.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2021

High-efficiency perovskite photovoltaic modules achieved via cesium doping

Perovskite solar modules have been attracting increasing attention due to their market potential, yet publications concerned with theintrinsic scale-up potential of different perovskite compositions remain relatively scarce. On the other hand, while great success is being made towards improving the power conversion efficiency (PCE) of perovskite solar cells (PSCs) by cesium cation (Cs + ) doping of the perovskite, more attention is being paid to the perovskite phase stabilization effect of Cs + doping, and less to other properties that are critical to understand and futher improve the PSC's. In this work, moderately-Cs-doped MAPbI 3 was employed as a model perovskite material in order to exclude the phase stabilization effect. Our systematic study revealed the influence of Cs + in organic-inorganic hybrid perovskites on the crystal structure, crystallization process, trap state density, band structure and charge (i.e., ions or photo-carriers) transport. Markedly, it has been observed that Cs + doping can greatly increase the carrier diffusion length in the perovskite films, thus improving the potential to scale-up PSC's.The PCE of small area devices (0.09 cm 2 ) was increased to 21.72% from 19.73%, with decreased hysteresis behavior and increased operational stability (T85 = 1000 h) after Cs + doped, where T85 refers to the retention of 85% of the initial PCE. Moreover, a PCE of 21.08% was obtained for a Cs + -containing perovskite module with an active area > 30 cm 2 , which demonstrates a better "reproducibility" than the reference sample (MAPbI3-based perovskite modules, PCE = 18.26%).

14 SOLAR ENERGY↗

DOE OSTI2021

Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 um and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm 2 . The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.

14 SOLAR ENERGY↗

NASA NTRS1983

On the localized nature of the Galactic cosmic rays

The escape of cosmic rays from the Galaxy at rigidities above and below 10 GV/c is investigated theoretically using a model with a diffusion coefficient of (1-10) x 10 to the 26th sq cm/sec (at 10 GV/c) and various values of the exponent delta. Some numerical results are presented in graphs, and it is found that at low energies the source nearest to the earth is at a distance of 100-300 pc, while the higher-energy diffusion length is 1-10 kpc (assuming in both cases that the diffusive medium is homogeneous and has a characteristic size greater than the respective lengths). For the case of a smaller storage volume, the lifetime to reach the boundary is inversely proportional to kappa.

Ormes, J. F.↗

DOE OSTI2023

Targeted synthesis of predicted metastable compounds using modulated elemental reactants

Three metastable compounds predicted to be kinetically stable using an “island” approach were successfully synthesized from designed modulated elemental reactants. Fe0.8V0.2Se2 was synthesized by depositing ultrathin elemental layers in a V|Fe|Se sequence to control the local composition. An alloyed rock salt structured Pb3Mn2Se5 constituent layer, which does not exist as a bulk compound, was synthesized in the heterostructure (Pb3Mn2Se5)0.6VSe2 by depositing a precursor with a V|Se|Pb|Se|Mn|Se|Pb|Se|Mn|Se|Pb|Se sequence of elemental layers that mimicked the compositional profile of the targeted heterostructure. The heterostructure (PbSe)1+δ(FeSe2)2 was prepared by depositing a precursor with a repeating layering sequence of Fe|Pb|Fe|Se, where each sequence contains the number of atoms required to form a single unit cell. In all three systems, the local compositions in the layer sequence kinetically favored the nucleation and growth of the targeted products during the deposition. The diffusion lengths to form the targeted compounds were short, and the diffusion was limited by postdeposition low temperature annealing to favor the growth of the targeted compounds and avoid the decomposition into a mixture of thermodynamically stable compounds.

Lemon, Mellie (ORCID:0000000328705881)↗

DOE OSTI2022

Simultaneously Enhancing Exciton/Charge Transport in Organic Solar Cells by an Organoboron Additive

Efficient exciton diffusion and charge transport play a vital role in advancing the power conversion efficiency (PCE) of organic solar cells (OSCs). Here, a facile strategy is presented to simultaneously enhance exciton/charge transport of the widely studied PM6:Y6-based OSCs by employing highly emissive trans-bis(dimesitylboron)stilbene (BBS) as a solid additive. BBS transforms the emissive sites from a more H-type aggregate into a more J-type aggregate, which benefits the resonance energy transfer for PM6 exciton diffusion and energy transfer from PM6 to Y6. Transient gated photoluminescence spectroscopy measurements indicate that addition of BBS improves the exciton diffusion coefficient of PM6 and the dissociation of PM6 excitons in the PM6:Y6:BBS film. Transient absorption spectroscopy measurements confirm faster charge generation in PM6:Y6:BBS. Moreover, BBS helps improve Y6 crystallization, and current-sensing atomic force microscopy characterization reveals an improved charge-carrier diffusion length in PM6:Y6:BBS. Finally, owing to the enhanced exciton diffusion, exciton dissociation, charge generation, and charge transport, as well as reduced charge recombination and energy loss, a higher PCE of 17.6% with simultaneously improved open-circuit voltage, short-circuit current density, and fill factor is achieved for the PM6:Y6:BBS devices compared to the devices without BBS (16.2%).

14 SOLAR ENERGY↗

DOE OSTI2023

Virtual Volumetric Additive Manufacturing (VirtualVAM)

Abstract Tomographic volumetric additive manufacturing (VAM) produces arbitrary 3D geometries by exposure of a rotating volume of photopolymer resin to tomographically‐patterned illumination. This enables high speed, layer‐less printing of parts from a wide range of photopolymers not amenable to layer‐by‐layer processes. Since the entire geometry is produced at once over the course of a few seconds to minutes, molecular diffusion length scales become significant to the printing process. Understanding these molecular reaction and diffusion processes is imperative for advancing VAM to a usable technology. These processes are experimentally very difficult to monitor and measure. Herein, VirtualVAM ‐ a simulation framework for modeling the tomographic VAM process, is developed and experimentally validated. VirtualVAM simulates reaction, diffusion, and heat generation processes over the course of a print with single‐voxel resolution. From a few experimentally‐determined input parameters and a set of images for projection, VirtualVAM is able to generate a large spatio‐temporal data set for any given tomographic VAM print. Using VirtualVAM, a number of experimentally‐unattainable aspects of the VAM process are investigated such as single‐voxel conversion profiles, effect of molecular oxygen, and stopping time determination. VirtualVAM also enables the optimization of exposure patterns to further improve contrast between in‐part and out‐of‐part delivered dose.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1962

Performance Evaluation of Fixed- and Variable-Area Rocket Exhaust Diffusers Using Single and Clustered Nozzles with and Without Gimbaling

An investigation of exhaust diffusers used for altitude simulation in testing rocket engines was conducted with model diffusers and gaseous nitrogen as the working fluid. This investigation was conducted to evaluate the effects on performance of gimbaling clustered nozzles in a single fixed-area exhaust diffuser. A two-nozzle cluster was gimbaled in all attitudes in four different exhaust-diffuser configurations: (1) a straight circular tube, (2) a straight figure-eight tube, (3) a circular tube with a second throat, and (4) a figure-eight tube with a second throat. Gimbaling clustered nozzles had little effect on the operating pressure ratio for either straight-tube or second-throat diffusers, but caused a large increase in the starting-pressure-ratio requirements in some straight-tube exhaust diffusers. The performance of two or four clustered nozzles with no gimbaling was compared with single-nozzle performance on the basis of the ratio of diffuser area to nozzle-throat area. The performance was found to be dependent on the diffuser- to nozzle-throat-area ratio and independent of both the number of primary nozzles and the nozzle-area ratio. A separate investigation was also conducted to evaluate the performance improvement obtainable with a variable-area exhaust diffuser. This type of diffuser achieved a 26-percent reduction in starting pressure ratio, a 40-percent reduction in operating pressure ratio, and a 50-percent reduction in the overall diffuser length over the values attainable with a fixed-area second-throat diffuser.

ROCKET↗

DOE OSTI2022

Mass Transport in Binary TiO 2 :SiO 2 and GeO 2 :SiO 2 Direct Ink Write Glasses

The mass transport mechanisms of Ti in TiO 2 :SiO 2 and Ge in GeO 2 :SiO 2 direct ink write, additively manufactured glasses were studied. Due to the low solubility of Ti in SiO2 and high melting point of TiO 2 relative to SiO 2 , Ti transport was found to occur via solid state interdiffusion between adjoining SiO 2 and TiO 2 precursor particles. The diffusivity of titanium in SiO 2 measured over typical sintering temperatures (1000-1300 °C) using Rutherford backscattering spectrometry was D = 9.1 × 10 -7 [m2/sec] exp ($\frac{378[\frac{kJ}{mol}]}{RT}$. This provides an estimate of ~30 nm for the diffusion length under typical sintering conditions (2 hrs. at 1200 °C). Although Ti and Ge have similar diffusivities in SiO 2 glass at low concentrations, GeO 2 was found to be much more mobile during the sintering of printed GeO 2 :SiO 2 green bodies. This was evident in glasses with phase separated GeO 2 regions over length scales of ~10 μm and in experiments involving binary xerogels in which GeO 2 migrated over ~10 μm through cracked, porous SiO 2 layers. Large phase separated regions and long transport lengths in GeO 2 :SiO 2 suggest that the transport of GeO 2 occurs prior to the densification of the SiO 2 matrix via an alternative mechanism such as capillary flow. These results inform important considerations in the design of index modifying inks for the direct ink write process, namely initial precursor phase, mutual solubility with the base SiO 2 glass, and mass transport throughout the sintering process.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗

NASA NTRS1976

A study of efficiency in low resistivity silicon solar cells

A general device-analysis program has been utilized to study the efficiency of silicon solar cells. The analysis is applied to specific geometries of both n(+)-p and n(+)-p-p(+) solar cells, and involves a numerical solution of the basic transport and continuity equations. This approach allows solutions that are free of typical limiting assumptions involved in solving the device equations as well as solutions relating to lifetime, mobility variations, and diffused-region profiles. The analysis includes available empirical information on diffusion length, mobility, and lifetime as a function of doping, as well as a Gaussian profile for the diffused region. Results are presented which illustrate the limitations of efficiency as a function of doping. It is found that the maximum efficiencies for both types of cell converge at lower resistivities to around 16% with air-mass-zero radiation and a single-layer absorbing-SiO antireflecting film. It is also found that the minority-carrier lifetime, both in the n(+) surface and p-type bulk regions, presents serious limitations to conversion efficiency, particularly in the low-resistivity cells.

Dunbar, P. M.↗

NASA NTRS1993

Analytical and experimental studies of a short compact subsonic diffuser for a two-dimensional supersonic inlet

An experimental study of a two-dimensional supersonic inlet with a short compact subsonic diffuser, length to exit diameter (dl/d) ratio of 1.25, was conducted to investigate the impact of the short diffuser on inlet performance at low speeds and to assess the diffuser subsonic performance for a simulated diffuser flow corresponding to high-speed inlet conditions near the design flight Mach number of 2.2. For the low-speed testing, a drooped lip was employed to improve the inlet performance at a high angle of attack. For the simulated high-speed testing, air was blown through slots or discrete nozzles as an active boundary-layer control. The results from the low-speed performance test were compared with the results from a previous test program on the same inlet with a long subsonic diffuser (dl/d = 4.5). The comparison indicates that inlet recovery was not affected by the use of the short diffuser for either the baseline (no droop) or the drooped cowl lip configuration. However, the inlet baseline distortion for the short diffuser configuration was substantially higher than for the long diffuser. A comparison of the two configurations with a 70 deg drooped lip showed no significant difference in distortion. For the portion of the experimental program in which diffuser conditions for high-speed flight were simulated, diffuser-induced flow separation occurred. This separation was predicted from an analytical study that used the Hess potential flow panel method and the Herring two-dimensional boundary-layer analysis computer codes. The flow separated mainly on the diffuser ramp. Subsequent tests in which boundary-control systems were utilized showed that blowing with either slots or discrete nozzles could suppress the flow separation in the short subsonic diffuser, thereby substantially improving the diffuser performance.

Iek, Chanthy↗

DOE OSTI2021

Short-range thermal magnon diffusion in magnetic garnet

Here, using the spin Seebeck effect (SSE), we study the propagation distance of thermally induced spin currents inside a magnetic insulator thin film in the short-range regime. We disambiguate spin currents driven by temperature and chemical potential gradients by comparing the SSE signal before and after adding a heat-sinking capping layer on the same device. We report that the measured spin decay behavior near the heat source is well accounted for by a diffusion model where the magnon diffusion length is in submicron range, in other words, two orders of magnitude smaller than previous estimates inferred from the long-range behavior. Our results highlight the caveat in applying a diffusive theory to describe thermally generated magnon transport, where a single decay length may not capture the behavior on all length scales.

36 MATERIALS SCIENCE↗

NASA NTRS1965

Solar cell calibration techniques

Solar cell calibration techniques - measurements of absolute quantum yields, surface reflection losses, diffusion lengths, and junction properties

CALIBRATION↗

NASA NTRS1984

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Weizer, V. G.↗

NASA NTRS1984

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

Weizer, V. G.↗