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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Kinetics of mineral condensation in the solar nebula

A natural extension of the type of gas-mineral-melt condensation experiments is to study the gas-mineral-melt reaction process by controlling the reaction times of appropriate gas compositions with silicate materials. In a condensing and vaporizing gas-solid system, important processes that could influence the composition of and speciation in the gas phase are the kinetics of vaporization of components from silicate crystals and melts. The high vacuum attainable in the space station would provide an environment for studying these processes at gas pressures much lower than those obtainable in experimental devices operated at terrestrial conditions in which the gas phase and mineral or melt would be allowed to come to exchange equilibrium. Further experiments would be performed at variable gas flow rates to simulate disequilibrium vapor fractionation. In this type of experiment it is desirable to analyze directly the species in the gas phase in equilibrium with the condensed silicate material. This analytical method would provide a direct determination of the species present in the gas phase. Currently, the notion of gas speciation is based on calculations from thermodynamic data. The proposed experiments require similar furnace designs and use similar experimental starting compositions, pressures, and temperatures as those described by Mysen.

Grove, T. L.↗
NASA NTRS1988

System characterization of a magnetically suspended flywheel

The purpose of flywheel energy storage is to provide a means to save energy during times when the satellite is in sunlight, and then return the energy during the time when the satellite is in darkness. Typically, an energy storage device operates cyclically, where for satellites in Low Earth Orbit (LEO) the typical period is 60 minutes of sunlight followed by 30 minutes of darkness. If a lifetime of 17 years is required the energy storage system must be capable of sustaining approximately 100,000 cycles. The recent developments at the University of Maryland and how these progressions apply to a 500 Watt-hour magnetically suspended flywheel stack energy storage system are covered. The work includes hardware testing results from a stack flywheel energy storage system, improvements in the area of non-contacting displacement transducers, and performance enhancements of magnetic bearings. The experimental results show that a stack flywheel energy storage system is a feasible technology.

Kirk, James A.↗
NASA NTRS1988

Design of a ram accelerator mass launch system

The ram accelerator mass launch system has been proposed to greatly reduce the costs of placing acceleration-insensitive payloads into low earth orbit. The ram accelerator is a chemically propelled, impulsive mass launch system capable of efficiently accelerating relatively large masses from velocities of 0.7 km/sec to 10 km/sec. The principles of propulsion are based on those of a conventional supersonic air-breathing ramjet; however the device operates in a somewhat different manner. The payload carrying vehicle resembles the center-body of the ramjet and accelerates through a stationary tube which acts as the outer cowling. The tube is filled with premixed gaseous fuel and oxidizer mixtures that burn in the vicinity of the vehicle's base, producing a thrust which accelerates the vehicle through the tube. This study examines the requirement for placing a 2000 kg vehicle into a 500 km circular orbit with a minimum amount of on-board rocket propellant for orbital maneuvers. The goal is to achieve a 50 pct payload mass fraction. The proposed design requirements have several self-imposed constraints that define the vehicle and tube configurations. Structural considerations on the vehicle and tube wall dictate an upper acceleration limit of 1000 g's and a tube inside diameter of 1.0 m. In-tube propulsive requirements and vehicle structural constraints result in a vehicle diameter of 0.76 m, a total length of 7.5 m and a nose-cone half angle of 7 degrees. An ablating nose-cone constructed from carbon-carbon composite serves as the thermal protection mechanism for atmospheric transit.

Aarnio, Michael↗
NASA NTRS1990

Radars in space

The capabilities of active microwave devices operating from space (typically, radar, scatterometers, interferometers, and altimeters) are discussed. General radar parameters and basic radar principles are explained. Applications of these parameters and principles are also explained. Trends in space radar technology, and where space radars and active microwave sensors in orbit are going are discussed.

Delnore, Victor E.↗
NASA NTRS1990

Microwave conductivity of laser ablated YBaCuO superconducting films and its relation to microstrip transmission line

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗
NASA NTRS1991

Microwave conductivity of laser ablated YBa2Cu3O(7-delta) superconducting films and its relation to microstrip transmission line performance

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response of laser ablated YBa2Cu3O(7-delta)/LaAlO3 thin films was studied as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗
NASA NTRS1991

Advances in high temperature components for AMTEC (Alkali Metal Thermal-to-Electric Converter)

The basic performance of Alkali Metal Thermal-to-Electric Converter (AMTEC) cells is well understood, and quantitative modeling of the electrode performance has been carried out. Tests have been carried out to evaluate the high temperature performance of critical AMTEC components. Progress made in understanding the relative performance of AMTEC components, such as electrodes, electrolytes, working fluids, and seals, as device operating temperature is varied is discussed. Most metallic components are especially subject to corrosion in hot liquid alkali metals containing dissolved oxides. Stability issues of AMTEC components may be addressed by life testing, accelerated testing, and modeling based on known kinetic and thermochemical data.

Williams, R. M.↗
NASA NTRS1993

Electron-Tunneling Magnetometer

Electron-tunneling magnetometer is conceptual solid-state device operating at room temperature, yet offers sensitivity comparable to state-of-art magnetometers such as flux gates, search coils, and optically pumped magnetometers, with greatly reduced volume, power consumption, electronics requirements, and manufacturing cost. Micromachined from silicon wafer, and uses tunneling displacement transducer to detect magnetic forces on cantilever-supported current loop.

Kaiser, William J.↗
NASA NTRS1991

Monolithic integrated circuit charge amplifier and comparator for MAMA readout

Prototype ICs for the Solar Heliospheric Observatory's Multi-Anode Microchannel Array (MAMA) have been developed; these ICs' charge-amplifier and comparator components were then tested with a view to pulse response and noise performance. All model performance predictions have been exceeded. Electrostatic discharge protection has been included on all IC connections; device operation over temperature has been consistent with model predictions.

Cole, Edward H.↗
NASA NTRS1992

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗
NASA NTRS1930

Pressure element of constant logarithmic stiffness for temperature compensated altimeter

The usual type of altimeter contains a pressure element, the deflections of which are approximately proportional to pressure changes. An evenly divided altitude scale is secured by using a mechanism between the pressure element and pointer which gives the required motion of the pointer. A temperature-compensated altimeter was constructed at the Bureau of Standards for the Bureau of Aeronautics of the Navy Department which contained a manually operated device for controlling the multiplication of the mechanism to the extent necessary for temperature compensation. The introduction of this device made it difficult to adjust the multiplying mechanism to fit an evenly divided altitude scale. To meet this difficulty a pressure element was designed and constructed which gave deflections which were proportional to altitude; that is, to the logarithm of the pressure. The element consisted of a metal bellows of the sylphon type coupled to an internal helical spring which was designed so as to have a variable number of active coils. This report presents a description of and laboratory data relating to the special pressure element for the altimeter. In addition equations which apply generally to springs and pressure elements of constant logarithmic stiffness are developed, including the deflection and the spacing between the coils in terms of the constants of the helical spring and pressure elements. (author)

Brombacher, W G↗
NASA NTRS1994

Sequential Polarity-Reversing Circuit

Proposed circuit reverses polarity of electric power supplied to bidirectional dc motor, reversible electro-mechanical actuator, or other device operating in direction depending on polarity. Circuit reverses polarity each time power turned on, without need for additional polarity-reversing or direction signals and circuitry to process them.

Labaw, Clayton C.↗
NASA NTRS1993

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
NASA NTRS1995

Capacitive Position Sensor For Accelerometer

Capacitive position sensor measures displacement of proof mass in prototype accelerometer described in "Single-Crystal Springs for Accelerometers" (NPO-18795). Sensor is ultrasensitive, miniature device operating at ultra-high frequency and described in more detail in "Ultra-High-Frequency Capacitive Displacement Sensor," (NPO-18675). Advances in design and fabrication of prototype accelerometer also applicable to magnetometers and other sensors in which sensed quantities measured in terms of deflections of small springs.

Vanzandt, Thomas R.↗
NASA NTRS1995

Controlled Thin-Film Growth Of Silicon Carbide Polytypes

Improved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.

Powell, J. Anthony↗
NASA NTRS1996

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Neudeck, Philip G.↗