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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Mimicking associative learning using an ion-trapping non-volatile synaptic organic electrochemical transistor

Associative learning, a critical learning principle to improve an individual’s adaptability, has been emulated by few organic electrochemical devices. However, complicated bias schemes, high write voltages, as well as process irreversibility hinder the further development of associative learning circuits. Here, by adopting a poly(3,4-ethylenedioxythiophene):tosylate/Polytetrahydrofuran composite as the active channel, we present a non-volatile organic electrochemical transistor that shows a write bias less than 0.8 V and retention time longer than 200 min without decoupling the write and read operations. By incorporating a pressure sensor and a photoresistor, a neuromorphic circuit is demonstrated with the ability to associate two physical inputs (light and pressure) instead of normally demonstrated electrical inputs in other associative learning circuits. To unravel the non-volatility of this material, ultraviolet-visible-near-infrared spectroscopy, X-ray photoelectron spectroscopy and grazing-incidence wide-angle X-ray scattering are used to characterize the oxidation level variation, compositional change, and the structural modulation of the poly(3,4-ethylenedioxythiophene):tosylate/Polytetrahydrofuran films in various conductance states. The implementation of the associative learning circuit as well as the understanding of the non-volatile material represent critical advances for organic electrochemical devices in neuromorphic applications.

42 ENGINEERING↗
DOE OSTI2020

FEBIP for functional nanolithography of 2D nanomaterials

Lithographic patterning on emerging nanomaterials is one of essential ingredients for the development of new functional nanomaterial and device systems. Focused electron beam induced processing (FEBIP) in combination with an on-demand reconfigurable precursor injection system enables the highest resolution and controllability of nanolithography on two-dimensional (2D) nanomaterials. FEBIP allows for localized atomic-to-nanoscale engineering of nanomaterials and devices in a multi-mode format including geometrical patterning, functionalization/defect formation/doping, metal/metal oxide deposition, interface fusion and activation, active channel cleaning. This chapter discusses the scientific bases and showcases the state-of-the-art FEBIP technologies with a specific focus on functional lithography of 2D nanomaterials and provides future prospects of FEBIP technologies to address real industrial needs for the development of high-performance, next-generation functional devices.

2D materials, nanolithography, focused electron be↗
DOE OSTI2022

Self-Protective Inverters Against Malicious Setpoints Using Analytical Reference Models

This paper presents the concept of self-protective inverters using reference models. In the proposed method, incoming setpoints from the utility operator or third-party aggregators are inspected using analytical reference models before engaging the setpoints to the inverter’s local controller. When a malicious setpoint passes the existing security layers, a smart inverter can examine the integrity of an incoming setpoint in real-time. The efficacy of the developed method has been tested using a laboratory setup, including a three-phase 3kVA SiC-MOSFET inverter and a 12kW NHR 9410 regenerative grid emulator. Furthermore, the results verify that the developed analytical models can provide device-level protection for grid-interactive inverters by inspecting and preventing harmful setpoints from getting engaged to the local controller.

42 ENGINEERING↗
DOE OSTI2023

Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Robust, nanoscale light-emitting devices are attractive for emerging photonic and quantum engineering applications. However, conventional approaches suffer from fabrication challenges or lack the potential to address individual nanostructures, such as quantum dots. In this paper, we present a device that can produce electrically driven light emission from a single quantum dot using a single carbon nanotube as the charge injection contact. Here, the device has a metal-oxide-semiconductor capacitor structure and operates based on an unconventional mechanism of electroluminescence, which relies on the use of bipolar voltage pulses. The proposed device can be fabricated in a simple manner using conventional lithographic processes, offering a scalable approach toward the development of optoelectronic devices at the single dot level.

42 ENGINEERING↗
DOE OSTI2024

High Throughput Genome Releaser

In this study, we present the development of a High Throughput Genome Releaser, an innovative device addressing common challenges in screening PCR. This genome DNA releaser is designed for rapid, cost-effective, and efficient DNA extraction, optimized for subsequent PCR reactions. Our experimentation with various synthetic materials led us to select a particular type of plastic that mirrors the properties of glass cover slides, providing a smooth surface and effective compression capabilities. We engineered a 96-well device equipped with a 96-well plate and a top rod, operable both manually and automatically, which is compatible with widely used liquid-handling robot decks. This compatibility enhances ease of use in high-throughput PCR setups. Additionally, we developed software to support its automatic functions. The genome releaser facilitates the extraction of PCR-amplifiable genomic DNA from 96 samples within minutes, eliminates the need for extraction buffers, and is adaptable to a wide range of microorganisms and cells. This versatility could significantly advance biomanufacturing processes.

42 ENGINEERING↗
DOE OSTI2020

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. Additionally, in devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The Neutronic Engine: A Platform for Operando Neutron Diffraction in Internal Combustion Engines

Neutron diffraction is a powerful tool for noninvasive and nondestructive characterization of materials and can be applied even in large devices such as internal combustion engines thanks to neutrons’ exceptional ability to penetrate many materials. While proof-of-concept experiments have shown the ability to measure spatially and temporally resolved lattice strains in a small aluminum engine on a timescale of minutes over a limited spatial region, extending this capability to timescales on the order of a crank angle degree over the full volume of the combustion chamber requires careful design and optimization of the engine structure to minimize attenuation of the incident and diffracted neutrons to maximize count rates. Here, we present the design of a “neutronic engine,” which is analogous to an optical engine in that the materials and external geometry of a typical automotive engine have been optimized to maximize access of the diagnostic while maintaining the internal combustion chamber geometry and operability of the engine. The high transparency of aluminum to neutrons makes it the ideal window material for neutron diagnostics, which allows the neutronic engine to be a truly all-metal engine with the same load and boundary condition capabilities of a modern downsized passenger car engine. The neutronic engine will enable 3D and time-resolved measurements of strain, stress, and temperature fields as well as phase transformation, texture, and microstructure throughout the metal components of the combustion chamber.

Wissink, Martin↗
DOE OSTI2025

Experimental study of airpath electrification in an opposed-piston two stroke (OP2S) engine architecture

The opposed-piston two stroke (OP2S) engine shows potential as an alternative engine architecture to the conventional four stroke engine due to its high-power density, thermal efficiency, and versatile airpath management system. Since the pistons of a two-stroke engine do not pump the air into and out of the cylinder like in a four-stroke engine, the selection of the air induction devices and airpath actuators becomes critical to optimize engine performance. Both the pumping losses and the in-cylinder combustion process can be affected by the scavenging process in a two-stroke engine. Therefore, this study compares two different airpath configurations for the same family of OP2S engines and investigates performance metrics like scavenging control, pumping work, net indicated and brake efficiencies, and engine-out emissions associated with each airpath. Data was collected on a 3.2 L, two-cylinder OP2S engine with an electrically assisted turbocharger (EAT) and a 4.9 L displacement, three-cylinder engine with a variable geometry turbocharger (VGT) and a supercharger. The experiments consisted of speed and load sweeps for both engines at the same operating conditions to compare scavenge control in both architectures. For the three-cylinder layout, the SE sweep range was much higher, and the intake pressure could be independently varied with air flowrate, thus providing more flexibility for scavenging control. The supercharger and the VGT usage was optimized based on its efficiency map and thus, this layout had lower pumping losses compared to the EAT. The two-cylinder engine had a higher overall SE as compared to the three-cylinder engine, but the intake pressure and air flowrate could not be decoupled, leading to over scavenging and increased short circuiting of fresh charge into the exhaust.

Bhatt, Ankur [Clemson University, Clemson, SC, USA↗
DOE OSTI2021

High stability of flexible perovskite transparent conductive oxide film via van der Waals heteroepitaxy

Transparent conducting oxides (TCOs), such as indium-tin oxide (ITO) and indium gallium zinc oxide (IGZO), are essential components in the design of flexible optoelectronic devices. However, it is still a challenge to prepare low-cost flexible transparent conductive film for achieving the flexible functionality together with high optical transparency and electrical conductivity. Herein, fluorphlogopite (mica) is selected as the bendable and transparent substrate for the fabrication of low-cost perovskite CaVO 3 TCO epitaxial film. Benefitting from thin mica substrate with high Young’s modulus of 200 GPa, flexible CaVO 3 TCO epitaxial film exhibits high mechanical stability in terms of electrical conductivity and optical transparency after bending up to 10 5 cycles. The change of resistance can reflect the bending curvature and strain state. Finally, our results provide a new pathway to design superior mechanical flexibility and stability CaVO 3 TCO films for application in flexible, light-weight, and portable smart optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Reliability Estimation for One-Shot Devices (Rev. 1)

We present an engineering-oriented summary of statistical methods for estimation of the reliability (or equivalently, failure probability) of one-shot devices such as explosive detonators and other weapon components. Estimates may be given as single points or intervals, based on pass/fail tests, margin analysis, computational models, expert judgment, or a combination of these. We focus on highly reliable devices for which few or no failures are expected to occur in testing.

42 ENGINEERING↗
DOE OSTI2022

Revitalizing interface in protonic ceramic cells by acid etch

Protonic ceramic electrochemical cells hold the promise to be operated at intermediate temperatures below 600 °C. Although the high proton conductivity of the bulk electrolyte has been demonstrated, it cannot be fully utilized in electrochemical full cells due to unknown causes. A practical solution is thus urgently needed. Here we showed that it comes from poor contacts between the low-temperature processed oxygen electrode-electrolyte interface. We demonstrated that a simple acid treatment can effectively rejuvenate the high-temperature annealed electrolyte surface, resulting in reactive bonding between the oxygen electrode and the electrolyte and improved electrochemical performance and stability. This enables exceptional protonic ceramic fuel-cell performance down to 350 °C, with peak power densities of 1.6 W cm -2 at 600 °C, 650 mW cm -2 at 450 °C, and 300 mW cm -2 at 350 °C, as well as stable electrolysis operations at large current densities above 3.9 A cm -2 under 1.4 V applied voltage at 600 °C. Furthermore, our work highlights the critical role of interfacial engineering in ceramic electrochemical devices and offers new understanding and practices towards sustainable energy infrastructure.

08 HYDROGEN↗
DOE OSTI2021

Recent Trends and Innovation in Additive Manufacturing of Soft Functional Materials

The growing demand for wearable devices, soft robotics, and tissue engineering in recent years has led to an increased effort in the field of soft materials. With the advent of personalized devices, the one-shape-fits-all manufacturing methods may soon no longer be the standard for the rapidly increasing market of soft devices. Recent findings have pushed technology and materials in the area of additive manufacturing (AM) as an alternative fabrication method for soft functional devices, taking geometrical designs and functionality to greater heights. For this reason, this review aims to highlights recent development and advances in AM processable soft materials with self-healing, shape memory, electronic, chromic or any combination of these functional properties. Furthermore, the influence of AM on the mechanical and physical properties on the functionality of these materials is expanded upon. Additionally, advances in soft devices in the fields of soft robotics, biomaterials, sensors, energy harvesters, and optoelectronics are discussed. Lastly, current challenges in AM for soft functional materials and future trends are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗
DOE OSTI2023

Using machine learning with optical profilometry for GaN wafer screening

Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs resulting from wasted processing effort. Many of the wafer scale characterization techniques—including optical profilometry—produce difficult to interpret results, while models using classical programming techniques require laborious translation of the human-generated data interpretation methodology. Alternatively, machine learning techniques are effective at producing such models if sufficient data is available. For this research project, we fabricated over 6000 vertical PiN GaN diodes across 10 wafers. Using low resolution wafer scale optical profilometry data taken before fabrication, we successfully trained four different machine learning models. All models predict device pass and fail with 70–75% accuracy, and the wafer yield can be predicted within 15% error on the majority of wafers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ferroic Halide Perovskite Optoelectronics

Metal halide perovskites (MHPs) as one of the most active materials gained tremendous attention in the past decade because of their outstanding performance in optoelectronics. Owing to their perovskite structure, ferroelectricity is anticipated in this class of materials. However, whether MHPs are ferroelectric or not remains elusive. Recently, discussion regarding ferroelasticity in MHPs has been also raised. In addition, ionic motion and structural dynamics are well known in MHPs. Additionally, the interplay of these phenomena including electric polarization, strain, ionic motion, and structural dynamics can have a significant impact on optoelectronics. Therefore, understanding the mechanism behind these phenomena and their interactions is critical in addressing the controversy about ferroicity of MHPs and developing functional devices. Here, the current findings about MHP's ferroicity are summarized and evaluated and a perspective for the future is provided. It is suggested that ionic motion and associated phenomena, coupled with ferroic behavior, are the main drivers behind MHPs functionality. The challenges are also discussed in probing MHPs’ ferroicity and what new measurement modalities are needed to fully understand and characterize MHP behavior. Finally, it is discussed how ferroic and strain can affect the optoelectronic performance of MHPs and how they can be used for engineering of higher performance devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

42 ENGINEERING↗
DOE OSTI2024

Multi-scale physics of bipolar membranes in electrochemical processes

Bipolar membranes (BPMs) enable control of ion concentrations and fluxes in electrochemical cells suitable for a wide range of applications. Here, in this work, we present the multi-scale physics of BPMs in an electrochemical engineering context and articulate design principles to drive the development of advanced BPMs. The chemistry, structure, and physics of BPMs are illustrated and related to the thermodynamics, transport phenomena, and chemical kinetics that dictate ion and species fluxes and selectivity. These interactions give rise to emergent structure–property–performance relationships that yield design criteria for BPMs that achieve high permselectivity, durability, and voltaic efficiency. The resulting performance trade-offs for BPMs are presented in the context of emerging applications in energy conversion or storage, and environmental remediation. By connecting the fundamental physical phenomena in BPMs to device-level performance and engineering, we aim to facilitate the development of next-generation BPMs for sustainable electrochemical processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

A molecular design approach towards elastic and multifunctional polymer electronics

Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C–H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm 2 V -1 s -1 after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.

42 ENGINEERING↗