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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ultrafast Carrier Self-Trapping Driven by Strong Exciton–Phonon Coupling in 2D MA 3 Bi 2 I 6 Cl 3 Perovskite

Two-dimensional (2D) hybrid bismuth halide perovskites have emerged as promising lead-free materials for optoelectronic applications due to their solution processability and tunable structures. Here, in this study, we investigate 2D layered hybrid perovskite MA 3 Bi 2 I 6 Cl 3 using temperature-dependent photoluminescence (PL) and femtosecond transient absorption spectroscopy. Our results reveal strong coupling between excitons and phonons, evidenced by giant Huang–Rhys factors, coherent phonon oscillations, and ultrafast carrier self-trapping into small-polaron and self-trapped exciton (STE) states. These processes appear as time-dependent ground-state bleach and photoinduced absorption features, highlighting the influence of the lattice in carrier dynamics. Wavelength- and time-resolved measurements reveal that PL emission is dominated by STEs, while free exciton emission is weak and short-lived. By comparing 2D MA 3 Bi 2 I 6 Cl 3 with 0D MA 3 Bi 2 I 9 , which contains molecularly isolated [BiI 6 ] 3− octahedra and 2D MA 3 Bi 2 Br 9 perovskites, we demonstrate how halide composition and structural dimensionality influence the balance between free exciton populations and carrier localization. These insights uncover the intrinsic kinetic landscape of photoexcited states in MA 3 Bi 2 I 6 Cl 3 . Overall, our study contributes to a mechanistic understanding of exciton–phonon interactions in lead-free 2D perovskites.

Pradeep, Kodimana Ramakrishnan [Northwestern Univ.↗
DOE OSTI2021

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Abstract Unabated, worldwide trends in CO 2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO 2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-μs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (< 2 × 10 7 -cm-s −1 ). Slow transition times and limited switch rates waste energy through transition loss and hysteresis loss in external magnetic components. Bulk conduction devices, where carriers are generated and controlled nearly simultaneously throughout the device volume, minimize this loss. Such devices are possible using below bandgap excitation of semi-insulating (SI) SiC single crystals. We explored carrier dynamics with a 75-fs single wavelength pump/supercontinuum probe and a modified transient spectroscopy technique and also demonstrated a new class of efficient, high-speed, high-gain, bi-directional, optically-controlled transistor-like power device. At a performance level six times that of existing devices, for the first time we demonstrated prototype operation at multi-10s of kW and 20-kV, 125-kHz in a bulk conduction transistor-like device using direct photon-carrier excitation with below bandgap light.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tracking carrier and exciton dynamics in mixed-cation lead mixed-halide perovskite thin films

Mixed-cation lead mixed-halide perovskites simultaneously possess structural stability and high power conversion efficiency. A thorough study of both carrier and exciton dynamics is needed to understand the photophysical properties that underpin its superior photovoltaic performance. By utilizing a broadband transient absorption spectroscopy, we observe the carrier and exciton dynamics in a FA 0.85 Cs 0.15 Pb(I 0.97 Br 0.03 ) 3 (FCPIB) perovskite by simultaneously resolving the carrier and exciton contribution to the transient change of the absorption spectra, from which the carrier density and exciton oscillator strength can be determined. Our data reveal a quick and significant conversion of the photogenerated carriers to excitons, on top of the usual carrier recombination process. Moreover, the decay of carrier density shows a change of kinetics from a second-order recombination at high pump fluence to a third-order recombination at low pump fluence. Our analysis utilizes band anharmonicity, presents an independent determination of electronic temperature and quasi-Fermi energy, and reveals an interesting interplay among the processes of carrier cooling, exciton formation/decay and carrier recombination, all as a function of time after photoexcitation. Our work demonstrates the use of pump fluence as a knob to tune the relative populations of carriers and excitons in halide perovskite materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhanced radiative and thermal properties from surface encapsulation of InAs nanowires

In this work, photoluminescence (PL), quantum efficiency and carrier dynamics are investigated in indium arsenide (InAs) nanowires (NWs) with various surface treatments, including a molecular beam epitaxy (MBE)-grown semiconductor shell passivation, sulfur-passivation, alumina (Al 2 O 3 ) coating by atomic layer deposition (ALD) and polydimethylsiloxane (PDMS) spin-coating. The ALD-dielectric layer-coated InAs core-shell NWs show a maximum 13-fold increase in PL intensity. In contrast to the previous reports, this enhancement is found to be due to increased radiative rate from an enhanced Purcell factor, better thermal conductance and higher carrier injection within the NWs instead of improved surface quality. Numeric simulations confirm the experimentally observed increased radiative rate. Further improvements are suggested with even thicker capped InAs NWs. Carrier lifetime in surface-treated NWs is extended and shows long-term stability, critical for practical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Efficient interlayer electron transfer in a MoTe 2 /WS 2 /MoS 2 trilayer heterostructure

Electron transfer and carrier dynamics in MoTe 2 /WS 2 /MoS 2 trilayer heterostructures are investigated by transient absorption and photoluminescence measurements. Monolayer flakes of MoTe 2 , WS 2 , and MoS 2 are obtained by mechanical exfoliation from their bulk crystals and are used to fabricate the heterostructures by a dry-transfer technique. Here, photoluminescence spectroscopic measurements indicate that the recombination of the MoS 2 and WS 2 intralayer excitons is significantly suppressed in the heterostructure, illustrating the efficient interlayer charge transfer processes. Layer-selective time-resolved differential reflectance measurements show that the electrons excited in MoTe 2 can transfer to MoS 2 within 0.3 ps. The transferred electrons show a long lifetime of several hundred picoseconds due to their slow recombination with the spatially separated holes that reside in MoTe 2 . Furthermore, the charge transfer and recombination processes are weakly dependent on the injected carrier density. These results demonstrate the feasibility of constructing van der Waals multilayer heterostructures involving the infrared-sensitive MoTe 2 with emergent properties and provide important information to quantify the performance of MoTe 2 - based devices.

2D materials↗
DOE OSTI2025

Dual Photoluminescence in Low-Temperature Phase of CsSnI 3 Nanocrystals

The expression of metal lone-pair electrons is hypothesized to underpin many of the interesting properties of inorganic halide perovskite semiconductors. Recently, a stable low-temperature monoclinic polar phase was predicted for CsSnBr 3 and CsSnI 3 , opening the possibility of direct investigation of a ferroelectric distorted structure compared to the undistorted structure. To date, there have been no experimental reports of such a structure in CsSnI 3 , and the low-temperature optical properties of CsSnI 3 nanocrystals have remained unexplored. Here we report optical and structural evidence of a phase transition around 240 K in 8.9 nm CsSnI 3 nanocrystals. Several changes in optical behavior occur below this transition point, including high-energy photoluminescence (PL) that emits concurrently with the exciton PL. The emergence of this high-energy PL is correlated with X-ray diffraction (XRD) and differential scanning calorimetry (DSC) supporting a phase transition from the orthorhombic structure between 240-200 K. Transient absorption measurements show an increase in the excited state lifetimes, i.e., slowed carrier cooling, at 200 K when photoexciting with photon energies above the high-energy state, consistent with slowed carrier cooling and emergence of high-energy PL. We hypothesize that the slowed carrier cooling is distinctive to this phase transition that modifies both the electronic and phonon structures that dictate excited-state carrier dynamics, and we discuss these changes.

14 SOLAR ENERGY↗
DOE OSTI2021

Efficacy of the Method of Four Coefficients to Determine Charge-Carrier Scattering

The investigation of the electronic properties of semiconductors from transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements) is challenging due to the averaging of charge-carrier dynamics inherent in such measurements. Here, we investigate the incorporation of a fourth measurement of electronic transport, the Nernst coefficient, into the analysis, termed the method of four coefficients. This approach yields the Fermi level, effective mass, scattering exponent, and relaxation time prefactor. We begin with a review of the underlying mathematics and investigate the mapping between the four-dimensional material property and transport coefficient spaces. We then investigate how the traditional single-parabolic band method yields a single, potentially incorrect point on the solution subspace. This uncertainty can be resolved through Nernst coefficient measurements and we map the span of the ensuing subspace. We conclude with an investigation of how sensitive the analysis of transport coefficients is to experimental error for different sample types.

charge carriers↗
DOE OSTI2024

Shaping the Infrared luminescence of Colloidal Nanocrystals Using a Dielectric Microcavity

As they have gained maturity, colloidal nanocrystals (NCs) have also expand the spectral range over of which they could be used for photonic and optoelectronic applications. In particular, the infrared use of NCs has become of utmost interest to develop cost-effective alternatives to current technologies. It is then critical not to let the material dictate the light–matter interaction, which is why the coupling of NCs to photonic cavities has been proposed. For infrared NCs, this approach has first been devoted to the control of absorption with in mind the increase of the signal magnitude for detectors. A Lot of efforts have been focused on the use of metallic metasurfaces. However, these generate significant optical losses and yield low quality factor. Here, this study rather focus on the coupling of infrared NCs to a dielectric mirror cavity. HgTe/CdS core-shell NCs are used and integrated into a cavity made of aperiodic dielectric mirrors. The effect of the substrate is systematically study on spectral linewidth, carrier dynamic, and emission directivity. The cavity is shown to narrow the PL by a factor 10, while focusing the emission over a 12° angle. Monitoring the power dependence of the emission, this study shows that the cavity leads to 250 K increase in the effective electronic temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga 2 O 3

Gallium oxide (Ga 2 O 3 ) is a promising ultrawide bandgap semiconductor for next-generation power electronics and optoelectronic devices. Here, temperature-dependent and polarization-resolved photoluminescence excitation spectroscopy data, complemented by hybrid-functional first-principles calculations, are presented, and a microscopic model is derived that explains the interplay of hole migration, defect trapping, and carrier recombination at defects underlying thermal quenching phenomena in α- and β-Ga 2 O 3 . In α-Ga 2 O 3 , the UV emission is attributed to self-trapped holes, while the blue luminescence arises from defect-related processes, including gallium split vacancies and their defect complexes. Calculations reveal an energy barrier of 88 meV for self-trapped hole migration in α-Ga 2 O 3 , consistent with activation energies from temperature-dependent photoluminescence. This enables efficient trapping by defects, enhancing blue luminescence and quenching UV emission. In β-Ga 2 O 3 , a higher migration barrier of 0.36 eV reduces the defect trapping, allowing the UV self-trapped hole emission to remain intense, with blue luminescence emerging only at elevated temperatures. These results establish a direct link between self-trapped hole migration, defect trapping, and thermal quenching of emission in both phases. The insights advance the understanding of carrier dynamics in ultrawide bandgap oxides and may guide defect engineering for high-performance functional devices.

Hajizadeh, Nima [Leibniz-Institut im Forschungsver↗
DOE OSTI2020

Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Abstract Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) 2 (FA) 3 Pb 4 Br 13 films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm −2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.

Lei, Lei↗
DOE OSTI2022

Interface Reconstruction from Ruddlesden–Popper Structures Impacts Stability in Lead Halide Perovskite Solar Cells

The impact of the bulky-cation-modified interfaces on halide perovskite solar cell stability is underexplored. Here, in this work, the thermal instability of the bulky-cation interface layers used in the state-of-the-art solar cells is demonstrated. X-ray photoelectron spectroscopy and synchrotron-based grazing-incidence X-ray scattering measurements reveal significant changes in the chemical composition and structure at the surface of these films that occur under thermal stress. The changes impact charge-carrier dynamics and device operation, as shown in transient photoluminescence, excitation correlation spectroscopy, and solar cells. The type of cation used for surface treatment affects the extent of these changes, where long carbon chains provide more stable interfaces. These results highlight that prolonged annealing of the treated interfaces is critical to enable reliable reporting of performances and to drive the selection of different bulky cations.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charge Concentration Limits the Hydrogen Evolution Rate in Organic Nanoparticle Photocatalysts

Colloidal organic nanoparticles have proven to be a promising class of photocatalyst for performing the Hydrogen Evolution Reaction (HER) due to their dispersibility in aqueous environments, their strong absorption within the visible region, and the tunabilty of their component materials' redox potentials. Currently, there is little understanding of how charge generation and accumulation in organic semiconductors change when these materials are formed into nanoparticles that share a high interfacial area with water, nor is it known what mechanism limits the hydrogen evolution efficiency in recent reports on organic nanoparticle photocatalysts. Herein, we use Time-Resolved Microwave Conductivity to study aqueous-soluble organic nanoparticles and bulk thin films composed of various blend ratios of the non-fullerene acceptor EH-IDTBR and conjugated polymer PTB7-Th and examine the relationship between composition, interfacial surface area, charge carrier dynamics, and photocatalytic activity. We quantitatively measure the rate of Hydrogen Evolution Reaction by nanoparticles composed of various donor:acceptor blend ratio compositions and find that the most active blend ratio displays a Hydrogen Quantum Yield of 0.83% per photon. Moreover, we find that nanoparticle photocatalytic activity corresponds directly to charge generation, and that nanoparticles have 3x more long-lived accumulated charges relative to bulk samples of the same material composition. Here these results suggest that, under our current reaction conditions, with approximately 3x solar flux, catalytic activity by these nanoparticles is limited by the concentration of electrons and holes in operando and not a finite number of active surface cites or the catalytic rate at the interface. This provides a clear design goal for the next generation of efficient photocatalytic nanoparticles.

08 HYDROGEN↗
DOE OSTI2024

Microstructural Passivation of Patterned Al 2 O 3 Back Contacts on CdS/CdTe Solar Cells

Abstract Patterned aluminum oxide (Al 2 O 3 ) back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance, where the spacing of the microholes is systematically varied at a constant microhole diameter (≈16 µm). Microhole arrays are created on an evaporated Al 2 O 3 layer (≈30 nm) on CdTe using laser‐beam lithography and selective wet etching processes. Comparative analysis indicates a significant decrease in fill factor (FF) and short‐circuit current ( I SC ) when the contact fraction falls below 30%, likely due to the Al 2 O 3 barrier impeding majority carriers. Above this fraction, FF and I SC are comparable to those of baseline CdTe cells without Al 2 O 3 . Open‐circuit voltage ( V OC ) shows a gradual decrease as Al 2 O 3 coverage is reduced but exhibits a slight increase (<15 mV) when the contact fraction exceeds 30%. Cathodoluminescence (CL) characterization reveals that significantly improved radiative recombination occurs within the CdTe grain bulk with Al 2 O 3 , whereas this effect on grain boundaries is minimal. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells.

Roy, Etee Kawna↗
DOE OSTI2022

Large-Area Lasing in Nanoscale Complex Media: The Critical Role of Local Dielectric Environment

Controlling how electromagnetic waves interact with complex media is critical for applications in imaging and focusing. Such lightwave interactions with complex media can lead to dramatic optical effects like lasing. While much work in random lasing focus on understanding how gain and scattering co-operatively generate lasing, little work has focused on how to manipulate the lasing threshold without modifying the structural disorder. Here, a simple, mostly unexplored, strategy is demonstrated that employs atomic layer deposition (ALD) to tune the local near-field environment while preserving the underpinning disorder—controlling lasing in a nanoscale complex medium on a large scale (>cm 2 ). The nanoscale complex medium is a quasi-2D system of coupled zinc oxide nanospheres with overall thickness deep in the sub-wavelength regime (≈λ/4). Near-ultraviolet femtosecond spectroscopy probes the broadband response of the gain nanomaterial, details how ALD process fundamentally modifies the fast-picosecond and slow-nanosecond carrier dynamics, and informs on the relevant timescales critical for lasing. Full-field electromagnetic simulations provide critical insights about how near-field dielectric environment modifies the nanostructure's scattering cross-section, which ultimately results in enhanced lasing. Importantly, these results highlight a simple path to control how electromagnetic waves interact in a complex medium, a key step toward large-scale implementation of complex lasers.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reversible Ferroelectric Polarization Modulation of Chiral Molecular Ferroelectrics by Circularly Polarized Light

Abstract The optical modulation of ferroelectric polarization constitutes a transformative, non‐contact strategy for the precise manipulation of ferroelectric properties, heralding advancements in optically stimulated ferroelectric devices. Despite its potential, progress in this domain is constrained by material limitations and the intricate nature of the underlying mechanisms. Recent studies have achieved efficient regulation of ferroelectric polarization and thermal conductivity in chiral ferroelectric thin films through the application of left‐ and right‐handed circularly polarized light (LCP and RCP). Differential absorption of circularly polarized light (CPL) induces nonequilibrium carrier dynamics, generating distinctive interfacial electrostatic fields that enable precise control of ultrathin ferroelectric films. For (R)‐BINOL−DIPASi and (S)‐BINOL−DIPASi (C 26 H 26 O 2 Si), polarization changes surpass 23%, exhibiting opposite response under LCP and RCP excitation. In R chiral films, remnant polarization decreases from 1.05 µC cm − 2 under LCP to 0.85 µC cm − 2 under RCP, whereas in S chiral films, polarization increases from 0.85 µC cm − 2 under LCP to 0.98 µC cm − 2 under RCP. This reversible modulation facilitates reliable switching between ON and OFF states, presenting the potential of chiral ferroelectric materials for flexible, high‐speed integrated photonic sensor technologies.

Chemistry↗
DOE OSTI2020

Strain–Chemical Gradient and Polarization in Metal Halide Perovskites

Metal halide perovskites (MHPs) have attracted broad research interest due to their outstanding optoelectronic performance. This performance has been attributed in part to the presence of polarization in these materials. However, the precise effects of chemical environment and strain condition on the polar states in MHPs have largely been missing. Herein it is revealed for the first time that chemical gradient is directly coupled with strain gradient in CH 3 NH 3 PbI 3 . This strain–chemical gradient induces an electric polarization that can potentially affect charge carrier dynamics. Furthermore, it is unveiled that this electric polarization—unlike ferroelectricity that only exists in noncentrosymmetric materials—can be present in both tetragonal and cubic phases of CH 3 NH 3 PbI 3 . This suggests that the strain–chemical gradient induced polarization is a more convincing explanation of the outstanding photovoltaic properties of MHPs than the hotly debated ferroelectric polarization. Finally, a mechanism of how this polarization impacts photovoltaic action is proposed, which offers insightful advances in the development of MHPs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Correlation of Band Bending and Ionic Losses in 1.68 eV Wide Band Gap Perovskite Solar Cells

Abstract Perovskite solar cells (PSCs) are promising for high‐efficiency tandem applications, but their long‐term stability, particularly due to ion migration, remains a challenge. Despite progress in stabilizing PSCs, they still fall short compared to mature technologies like silicon. This study explores how different piperazinium salt treatments using iodide, chloride, tosylate, and bistriflimide anions affect the energetics, carrier dynamics, and stability of 1.68 eV bandgap PSCs. Chloride‐based treatments achieved the highest power conversion efficiency (21.5%) and open‐circuit voltage (1.28 V), correlating with stronger band bending and n‐type character at the surface. At the same time, they showed reduced long‐term stability due to increased ionic losses. Tosylate‐treated devices offered the best balance, retaining 96.4% efficiency after 1000 h (ISOS‐LC‐1I). These findings suggest that targeted surface treatments can enhance both efficiency and stability in PSCs.

14 SOLAR ENERGY↗
DOE OSTI2021

Potential dependent spectroelectrochemistry of electrofluorogenic dyes on indium–tin oxide

Indium-tin oxide (ITO) is used in a variety of applications due to its electrical conductivity and optical transparency. Moreover, ITO-coated glass is a common working electrode for spectroelectrochemistry. Thus, the ITO substrates should exhibit well-understood spectroscopic characteristics. Here, we report anomalous potential-dependent luminescence emission from three structurally dissimilar electrofluorogenic probe on ITO-coated glass. The three probes, flavin mononucleotide, resorufin, and Nile blue, show the expected fluorescence modulation between their oxidized, emissive forms and their reduced, nonfluorescent forms at low laser irradiance and/or high concentrations. However, at high irradiance and/or low concentration, the emission intensity increases at reducing potentials, contrary to expectations. In addition, a strong interplay between probe molecule concentration and laser irradiance is observed. We attribute the anomalous behavior to a combination of (1) irradiance-dependent ITO carrier dynamics, and (2) interaction of the fluorescent probe with ITO at reducing potentials resulting in a charge transfer state with altered emission behavior. Thus, the potential- and irradiance-dependent behavior of ITO and the resulting charge transfer state may not only interfere with the observation of potential-dependent fluorescence from redox probes but can completely reverse the polarity of the potential-dependent luminescence, especially at high irradiance and low concentration.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗