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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
DOE OSTI2025

Atomistic characterization of hydration-dependent fuel cell ionomer nanostructure: validation by vibrational spectroscopy

The development of Nafion alternatives for fuel cells and electrolyzers requires a fundamental understanding of hydration-dependent ion-exchange site acid/base chemistry. We present here reactive force field (ReaxFF) molecular dynamics (MD) simulations of Nafion at varying molar water/ion-exchange-site ratios (λ), which we correlate to our experimental and density functional theory-based vibrational spectra. ReaxFF describes the formation and breaking of covalent bonds, enabling simulations of proton exchange between sulfonic acid/sulfonate groups and water/hydronium. Our MD simulations determine the λ-dependent equilibrium proportions of protonated and deprotonated sites. We find that protonated sites persist across all λ from 0 to 20, challenging the widely accepted notion that all sites are ionized above a threshold λ value (e.g., 3 or 4). Our simulations generate hundreds of realistic exchange site environments, the characterization of which are based on 6 Å radii sulfur-centered ‘inner-spheres’. These inner- and outer-sphere regions elucidate an interplay of stereoelectronic factors that influence protonation states, including the number of inner-sphere waters (Λ). Our simulations produce broad λ-dependent distributions of Λ values, representing non-uniform exchange site hydration. Moreover, we demonstrate that these distributions are specific to both protonated and deprotonated sites, with significant overlap between the two distributions for all non-zero λ. These distributions underpin the IR spectra of hydrated membranes, with each exchange site contributing an IR spectrum characteristic of its protonation state and Λ. We expect that these nanostructural characterizations of Nafion exchange sites will contribute to the development of new ionomers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

The NEWS-G detector at SNOLAB

The New Experiments With Spheres-Gas (NEWS-G) collaboration intends to achieve sub-GeV/c 2 Weakly Interacting Massive Particles (WIMPs) detection using Spherical Proportional Counters (SPCs). SPCs are gaseous detectors relying on ionisation with a single ionization electron energy threshold. The latest generation of SPC for direct dark matter searches has been installed at SNOLAB in Canada in 2021. This article details the different processes involved in the fabrication of the NEWS-G experiment. Also outlined in this paper are the mitigation strategies, measurements of radioactivity of the different components, and estimations of induced background event rates that were used to quantify and address detector backgrounds.

47 OTHER INSTRUMENTATION↗
NASA NTRS1985

Dissociative and double photoionization cross sections of NO from threshold to 120 A

The partial photoionization cross sections for producing the NO(+) parent ion and the O(+), N(+), and NO2(+) fragment ions from neutral NO are presented from 120 to 614 A. The results indicate predissociation of the c(sup3) pi (21.72 eV) and B prime (sup 1) sigma (+) (22.73 eV) electronic states of NO(+). The photoionization threshold for double ionization was found to be 39.4 + or 0.12 eV.

Samson, J. A. R.↗
NASA NTRS1985

Dissociative and double photoionization cross sections of NO from threshold to 120 A

The partial photoionization cross sections for producing the NO(+) parent ion and the O(+), N(+), and NO(2+) fragmentations from neutral NO are presented from 120 to 614 A. The results indicate predissociation of the 3 pi (21.72 eV) and B-prime 1Sigma(+) (22.73 eV) electronic states of NO(+). The photoionization threshold for double ionization was found to be 39.4 + or - 0.12 eV.

Samson, J. A. R.↗
NASA NTRS2005

Atomic and Molecular Physics

A symposium on atomic and molecular physics was held on November 18, 2005 at Goddard Space Flight Center. There were a number of talks through the day on various topics such as threshold law of ionization, scattering of electrons from atoms and molecules, muonic physics, positron physics, Rydberg states etc. The conference was attended by a number of physicists from all over the world.

Bhatia, Anand K.↗
NASA NTRS2009

Autonomously Calibrating a Quadrupole Mass Spectrometer

A computer program autonomously manages the calibration of a quadrupole ion mass spectrometer intended for use in monitoring concentrations and changes in concentrations of organic chemicals in the cabin air of the International Space Station. The instrument parameters calibrated include the voltage on a channel electron multiplier, a discriminator threshold, and an ionizer current. Calibration is achieved by analyzing the mass spectrum obtained while sweeping the parameter ranges in a heuristic procedure, developed by mass spectrometer experts, that involves detection of changes in signal trends that humans can easily recognize but cannot necessarily be straightforwardly codified in an algorithm. The procedure includes calculation of signal-to-noise ratios, signal-increase rates, and background-noise-increase rates; finding signal peaks; and identifying peak patterns. The software provides for several recovery-from-error scenarios and error-handling schemes. The software detects trace amounts of contaminant gases in the mass spectrometer and notifies associated command- and-data-handling software to schedule a cleaning. Furthermore, the software autonomously analyzes the mass spectrum to determine whether the parameters of a radio-frequency ramp waveform are set properly so that the peaks of the mass spectrum are at expected locations.

Lee, Seungwon↗
NASA NTRS2019

Plasma environment effects on K lines of astrophysical interest I. Atomic structure, radiative rates, and Auger widths of oxygen ions

Aims. In the context of black-hole accretion disks, the main goal of the present study is to estimate the plasma environment effects on the atomic structure and radiative parameters associated with the K-vacancy states in ions of the oxygen isonuclear sequence. Methods. We used a time-averaged Debye–Hückel potential for both the electron–nucleus and the electron–electron interactions implemented in the fully relativistic multiconfiguration Dirac–Fock (MCDF) method. Results. Modified ionization potentials, K thresholds, Auger widths, and radiative transition wavelengths and rates are reported for O I–O VII in plasma environments with electron temperature and density ranges 10(exp 5)−10(exp 7) K and 10(exp 18)−10(exp 22)/cu.cm.

J. Deprince↗
DOE OSTI2026

Effects of screening and pressure ionization on the electron broadening of spectral lines in dense plasmas

Collisions between electrons and radiating atoms broaden spectral absorption and emission lines in dense plasmas. High densities also introduce screening and pressure ionization effects that distort the wave functions of both bound and free electrons. In order to study how dense plasma effects influence the electron broadening of spectral lines, this paper incorporates electron wave functions from an average-atom (AA) model to calculate the linewidth of the B III 2⁢𝑝−2⁢𝑠 transition at 𝑇 = 10 eV for mass densities ranging from 𝜌 = 10 −4 to 0.4⁢ g⁡/cc. The calculation method uses the impact approximation, allowing the linewidth to be written in terms of electron-collision cross sections and an interference term. Compared to an otherwise identical calculation that uses Coulomb free wave functions, the AA method is found to modify both the cross sections and the resulting linewidth at sufficiently high density by introducing screening and pressure-ionized bound states. Screening lowers the cross sections at low energies and near electron excitation thresholds, while pressure-ionized bound states introduce resonances into the continuum. Thus, as the density increases, the relative linewidth between the AA and Coulomb calculations follows a general decrease because of screening, with sharp increases at various intervals due to pressure ionization. Finally, the AA results are also compared with a common approach to introduce screening through the interaction potential and reduced models that use the Bethe formula for the inelastic electron-collision cross sections.

electronic excitation & ionization↗
NASA NTRS1972

Calculation of photoionization cross section near auto-ionizing lines and magnesium photoionization cross section near threshold

The research performed is briefly reviewed. A simple method was developed for the calculation of continuum states of atoms when autoionization is present. The method was employed to give the first theoretical cross section for beryllium and magnesium; the results indicate that the values used previously at threshold were sometimes seriously in error. These threshold values have potential applications in astrophysical abundance estimates.

Moore, E. N.↗
NASA NTRS1989

Lowest ionization potentials of Al2

Potential curves for the lowest two electronic states, X 2Sigma(+)g and A 2Pi(u), of Al2(+) were computed using complete active space SCF/multireference CI wave functions and large Gaussian basis sets. The lowest observable vertical ionization potential, to Al2(+) X 2Sigma(+)g, of the Al2 X 3 Pi(u) ground state is calculated to occur around 6.1 eV, in excellent agreement with the experimental range of 6.0 to 6.42 eV obtained in recent cluster ionization studies by Cox and co-workers. The second vertical ionization potential, to Al2(+) A 2Pi(u), occurs near 6.4 eV, also within the experimental range. The adiabatic IP of 5.90 eV is in good agreement with the value of 5.8 to 6.1 eV deduced by Hanley and co-workers from the difference in thresholds between collision induced dissociation processes of Al3(+). The computed IP values are somewhat larger than those deduced from branching ratios in cluster fragmentation experiments by Jarrold and co-workers. The observation of an ionization threshold below 6.42 eV is shown to be incompatible with an Al2 ground electronic state assignment of 3Sigma(-)g, but the separation between the two lowest states of Al2 is so small that it is likely that both are populated in the experiments, so that this does not provide unambiguous support for the recent theoretical assignment of the ground state as 3Pi(u).

Bauschlicher, Charles W., Jr.↗
NASA NTRS1988

The lowest ionization potentials of Al2

Potential curves for the lowest two electronic states (X 2 sigma g + and A 2 pi u) of Al2(+) were computed using complete active space SCF/multireference CI wave functions and large Gaussian basis sets. The lowest observable vertical ionization potential (to Al2(+) X 2 sigma g +) of the Al2 X 3 pi u ground state is calculated to occur around 6.1 eV, in excellent agreement with the experimental range of 6.0 to 6.42 eV obtained in recent cluster ionization studies by Cox and co-workers. The second vertical ionization potential (to Al2(+) A 2 pi u) occurs near 6.4 eV, also within the experimental range. The adiabatic IP of 5.90 eV is in good agreement with the value of 5.8 to 6.1 eV deduced by Hanley and co-workers from the difference in thresholds between collision induced dissociation processes of Al3(+). The computed IP values are somewhat larger than those deduced from branching ratios in cluster fragmentation experiments by Jarrold and co-workers. The observation of an ionization threshold below 6.42 eV is shown to be incompatible with an Al2 ground electronic state assignment of 3 sigma g -, but the separation between the two lowest states of Al2 is so small that it is likely that both are populated in the experiments, so that this does not provide unambiguous support for the recent theoretical assignment of the ground state as 3 pi u.

Bauschlicher, Charles W., Jr.↗
NASA NTRS1991

High-resolution threshold photoionization of N2O

Pulsed field ionization (PFI) has been used in conjunction with a coherent VUV source to obtain high-resolution threshold photoelectron spectra for the (000), (010), (020), and (100) vibrational states of the N2O(+) cation. Simulations for the rotational profiles of each vibronic level were obtained by fitting the Buckingham-Orr-Sichel equations using accurate spectroscopic constants for the ground states of the neutral and the ion. The relative branch intensities are interpreted in terms of the partial waves of the outgoing photoelectron to which the ionic core is coupled and in terms of the angular momentum transferred to the core.

Wiedmann, R. T.↗
DOE OSTI2022

Microwave breakdown of sub-atmospheric argon gas in the vicinity of a microgap

The microwave electric field at breakdown for argon gas in a microgap (generally, gap size <1 mm) over a wide range of pressures and gap sizes was found to exhibit two behavioral pressure regimes. A high microwave electric field was established in the gap of a re-entrant mode resonator. By slowly raising the microwave electric field level, a breakdown level is reached where impact ionization induces low pressure argon gas to breakdown preferentially outside of the gap. At high pressure, breakdown is found to occur preferentially inside the gap, but only after the pressure is high enough for impact ionization to produce breakdown there. Impact ionization has a lower threshold electric field than the boundary-controlled processes, such as secondary electron emission, that would eventually produce breakdown inside the microgap if impact ionization did not occur first. Thus, the lower pressure regime is characterized by breakdown outside of the gap, while in the high-pressure regime, breakdown occurs inside the gap, in both cases by impact ionization. The transition pressure P T between these two pressure regimes depends on the gap size d gap , roughly as P T ∝ d gap –2 . Consistent with the model developed here, this corresponds to the full-amplitude of electron oscillation in the gap field being commensurate with the gap size.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

The effect of autoionization on the HBr + X 2 Π 3/2,1/2 state photoelectron angular distributions

A double-imaging photoelectron-photoion spectrometer and synchrotron radiation have been used to measure the HBr + X 2 Π 3/2 v + = 0, 1, 2 and the 2 Π 1/2 v + = 0 state photoelectron angular distributions, as characterized by the anisotropy parameter β , the total ion yield, and the threshold photoelectron spectrum. Particular attention has been focussed on the photon energy range between the 2 Π 3/2 and the 2 Π 1/2 spin–orbit components of the ground ionic state. This region encompasses Rydberg states, belonging to series converging onto the upper 2 Π 1/2 ionization limit, which may decay by autoionization into the 2 Π 3/2 ionization continuum. A detailed study has been performed on the effects of autoionization on the 2 Π 3/2 v + = 0 state photoelectron angular distributions. Furthermore, the observed energy dependent variations in the β -values exhibit a regular pattern that correlates with excitation into members of a very broad d-type Rydberg series. Additional rapid variations in the β -parameters, which occur over a narrow energy range, appear to coincide with sharp autoionizing Rydberg states belonging to s, p and d series. The present experimental results for the HBr + X 2 Π 3/2 v + = 0 state photoelectron anisotropy parameter are compared to previously reported theoretical predictions and to earlier studies of the Kr + 4p 5 2 P 3/2 state β -parameter. The threshold photoelectron spectrum of the X 2 Π 3/2 v + = 0 band exhibits partially resolved rotational structure. A simulation of this structure yields an ionization threshold of 11.6673 ± 0.0010 eV, which is consistent with previous measurements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Atomic and Molecular Physics in Strong Fields

In this project, we have investigated a broad range of atomic, molecular, and optical (AMO) processes of current significance in strong-field and ultrafast science and technology. The main goals are to develop new theoretical formalisms and accurate computational methods for ab initio and in-depth non-perturbative study of time-resolved multiphoton quantum dynamics and spectroscopy, very-high-order harmonic generation, optimal control of ultrafast attosecond pulse generation, and resonance-enhanced below threshold harmonics in intense ultrashort laser fields. We have worked on the following projects and we have published 20 top 15 % SCI journal articles during the last 3.5 years (Jan. 1, 2016 to June 30, 2019), including one article in top raking Physical Review Letters, and 3 articles in top ranking (Nature) Scientific Reports, and one Physical Review A article was chosen as Editors’ suggestion paper, etc. (a) Development of new time-dependent methods for accurate and efficient solution of multi-dimensional time-dependent Schrödinger equation and time-dependent density functional theory. (b) Non-perturbative treatment of very-high order (1000th – 5000th order) harmonic generation and broadband supercontinuum spectra from XUV to soft x-ray regime. (c) Development of synchrosqueezing transform (SST) for precision time-frequency analysis of electron multi-rescattering dynamics. (d) Exploration of the dynamical origin of resonance-enhanced near- and below-threshold harmonics. (e) Probing the high-order harmonics generation in disordered semiconductor. (f) Multiphoton ionization of one-electron relativistic diatomic quasi-molecules in strong laser fields. and, (g) New development of non-adiabatic density functional theory. The theoretical and simulation projects we have pursued are closely related to the ongoing experimental researches in several leading laboratories in the US and Europe, etc. It is expected that the outcome of this project will provide timely and significant new information and insight for the advancement of strong-field atomic and molecular physics and ultrafast science and technology.

74 ATOMIC AND MOLECULAR PHYSICS↗